NGTB30N120FL2WG [ONSEMI]
IGBT 1200V 30A FS2 太阳能/UPS;型号: | NGTB30N120FL2WG |
厂家: | ONSEMI |
描述: | IGBT 1200V 30A FS2 太阳能/UPS PC 双极性晶体管 |
文件: | 总9页 (文件大小:174K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NGTB30N120FL2WG
IGBT - Field Stop II
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop II Trench construction, and provides superior
performance in demanding switching applications, offering both low
on state voltage and minimal switching loss. The IGBT is well suited
for UPS and solar applications. Incorporated into the device is a soft
and fast co−packaged free wheeling diode with a low forward voltage.
www.onsemi.com
Features
30 A, 1200 V
• Extremely Efficient Trench with Field Stop Technology
• T
= 175°C
VCEsat = 2.0 V
Jmax
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 10 ms Short Circuit Capability
• This is a Pb−Free Device
Eoff = 0.7 mJ
C
Typical Applications
• Solar Inverter
• Uninterruptible Power Supplies (UPS)
• Welding
G
E
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
VCES
IC
Value
Unit
V
Collector−emitter voltage
1200
Collector current
@ TC = 25°C
A
60
30
TO−247
CASE 340AL
G
@ TC = 100°C
C
E
Pulsed collector current, T
ICM
120
A
A
pulse
limited by T
, 10 ms Pulse,
Jmax
V
GE
= 15 V
MARKING DIAGRAM
Diode forward current
@ TC = 25°C
IF
60
30
@ TC = 100°C
Diode pulsed current, T
limited
IFM
120
A
V
pulse
by T
Jmax
Gate−emitter voltage
Transient gate−emitter voltage
(T = 5 ms, D < 0.10)
VGE
$20
30N120FL2
AYWWG
30
pulse
Power Dissipation
PD
W
@ TC = 25°C
@ TC = 100°C
452
227
Short Circuit Withstand Time
T
10
ms
°C
SC
V
GE
= 15 V, V = 500 V, T ≤ 150°C
CE J
A
Y
= Assembly Location
= Year
Operating junction temperature
range
T
−55 to +175
J
WW
G
= Work Week
= Pb−Free Package
Storage temperature range
T
−55 to +175
260
°C
°C
stg
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device
NGTB30N120FL2WG
Package
Shipping
TO−247 30 Units / Rail
(Pb−Free)
© Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
July, 2015 − Rev. 1
NGTB30N120FL2W/D
NGTB30N120FL2WG
THERMAL CHARACTERISTICS
Rating
Symbol
Value
0.33
0.5
Unit
°C/W
°C/W
°C/W
Thermal resistance junction−to−case, for IGBT
Thermal resistance junction−to−case, for Diode
Thermal resistance junction−to−ambient
R
q
JC
R
R
q
JC
JA
40
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
= 0 V, I = 500 mA
V
(BR)CES
1200
−
−
V
V
GE
C
Collector−emitter saturation voltage
V
= 15 V, I = 30 A
V
CEsat
−
−
2.00
−
2.30
−
GE
C
V
GE
= 15 V, I = 30 A, T = 175°C
C J
Gate−emitter threshold voltage
V
GE
= V , I = 400 mA
V
GE(th)
4.5
5.5
6.5
V
CE
C
Collector−emitter cut−off current, gate−
emitter short−circuited
V
= 0 V, V = 1200 V
CE J =
I
−
−
−
−
1.0
2
mA
GE
CE
CES
V
GE
= 0 V, V = 1200 V, T 175°C
Gate leakage current, collector−emitter
short−circuited
V
= 20 V , V = 0 V
I
−
−
200
nA
pF
GE
CE
GES
Input capacitance
C
−
−
−
−
−
−
5250
170
100
220
45
−
−
−
−
−
−
ies
Output capacitance
C
oes
V
= 20 V, V = 0 V, f = 1 MHz
GE
CE
Reverse transfer capacitance
Gate charge total
C
res
nC
ns
Q
g
Gate to emitter charge
Gate to collector charge
Q
V
CE
= 600 V, I = 30 A, V = 15 V
ge
gc
C
GE
Q
105
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−on delay time
Rise time
t
−
−
−
−
−
−
−
−
−
−
−
−
−
−
98
35
−
−
−
−
−
−
−
−
−
−
−
−
−
−
d(on)
t
r
Turn−off delay time
t
210
130
2.6
0.7
3.3
92
T = 25°C
d(off)
J
V
= 600 V, I = 30 A
CC
C
Fall time
t
f
R = 10 W
g
mJ
ns
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
E
E
V
= 0 V/ 15V
on
off
GE
E
ts
t
t
d(on)
t
r
35
Turn−off delay time
220
260
3.5
1.8
5.3
T = 175°C
d(off)
J
V
= 600 V, I = 30 A
CC
C
Fall time
t
f
R = 10 W
g
mJ
Turn−on switching loss
Turn−off switching loss
Total switching loss
E
E
V
= 0 V/ 15V
on
off
GE
E
ts
DIODE CHARACTERISTIC
Forward voltage
V
= 0 V, I = 30 A
V
t
−
−
1.75
−
−
−
V
GE
F
F
V
GE
= 0 V, I = 30 A, T = 175°C
F
J
T = 25°C
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
−
−
−
−
−
−
240
2.5
18
−
−
−
−
−
−
ns
mc
A
J
rr
I = 30 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
T = 175°C
t
rr
413
4.3
20
ns
mc
A
J
I = 30 A, V = 400 V
F
R
Q
rr
di /dt = 200 A/ms
F
I
rrm
www.onsemi.com
2
NGTB30N120FL2WG
TYPICAL CHARACTERISTICS
120
120
100
80
60
40
20
0
T = 150°C
T = 25°C
J
J
V
GE
= 20 V
V
= 20 V
to 13 V
100
80
60
40
20
0
GE
to 13 V
11 V
10 V
11 V
10 V
9 V
9 V
8 V
7
8 V
7 V
7 V
0
1
2
3
4
5
6
8
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
120
100
80
60
40
20
0
120
100
80
60
40
20
0
T = −55°C
J
V
= 20 V
to 13 V
GE
11 V
10 V
T = 150°C
J
7 V
9 V
8 V
T = 25°C
J
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
9
10 11 12 13
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
V
GE
, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics
Figure 4. Typical Transfer Characteristics
4.00
10000
1000
C
I
C
= 60 A
ies
3.50
3.00
I
= 30 A
= 15 A
C
2.50
2.00
1.50
1.00
0.50
0.00
C
oes
I
100
10
C
C
res
T = 25°C
J
1
−75 −50 −25
0
25 50 75 100 125 150 175 200
0
10 20
30 40 50
60 70
80
90 100
T , JUNCTION TEMPERATURE (°C)
J
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 5. VCE(sat) vs TJ
Figure 6. Typical Capacitance
www.onsemi.com
3
NGTB30N120FL2WG
TYPICAL CHARACTERISTICS
70
60
50
40
30
20
10
0
16
14
12
10
T = 25°C
J
V
CE
= 600 V
T = 150°C
J
8
6
4
V
V
= 600 V
= 15 V
GE
CE
2
0
I
C
= 30 A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
V , FORWARD VOLTAGE (V)
F
Q , GATE CHARGE (nC)
G
Figure 7. Diode Forward Characteristics
Figure 8. Typical Gate Charge
3.5
3
1000
100
10
V
V
= 600 V
= 15 V
= 30 A
CE
E
on
GE
I
C
Rg = 10 W
2.5
2
t
d(off)
t
f
t
d(on)
1.5
1
E
off
t
r
V
V
= 600 V
= 15 V
= 30 A
CE
GE
0.5
0
I
C
Rg = 10 W
120 140
T , JUNCTION TEMPERATURE (°C)
0
20
40
60
80
100
160
0
20
40
60
80
100
120
140 160
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 9. Switching Loss vs. Temperature
Figure 10. Switching Time vs. Temperature
12
10
8
1000
100
10
V
V
= 600 V
= 15 V
CE
GE
T = 150°C
t
J
f
E
Rg = 10 W
on
t
d(off)
t
6
d(on)
E
off
4
V
V
= 600 V
= 15 V
CE
t
r
GE
2
I
C
= 30 A
Rg = 10 W
0
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65 75
85
I , COLLECTOR CURRENT (A)
C
I , COLLECTOR CURRENT (A)
C
Figure 11. Switching Loss vs. IC
Figure 12. Switching Time vs. IC
www.onsemi.com
4
NGTB30N120FL2WG
TYPICAL CHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
10000
V
V
= 600 V
= 15 V
V
V
= 600 V
= 15 V
CE
CE
GE
GE
T = 150°C
T = 150°C
J
J
E
on
t
I
C
= 30 A
I = 30 A
C
d(off)
1000
100
10
t
f
t
d(on)
E
off
t
r
5
15
25
35
45
55
65
75
85
5
15
25
35
45
55
65
75
85
Rg, GATE RESISTOR (W)
Rg, GATE RESISTOR (W)
Figure 13. Switching Loss vs. Rg
Figure 14. Switching Time vs. Rg
1000
5
4.5
4
t
d(off)
E
on
t
f
t
3.5
3
d(on)
t
r
2.5
2
100
E
off
1.5
1
V
= 15 V
V
= 15 V
GE
GE
T = 150°C
J
T = 150°C
J
I
= 30 A
I = 30 A
C
C
0.5
0
Rg = 10 W
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
Rg = 10 W
600 650 700 750 800
, COLLECTOR−EMITTER VOLTAGE (V)
CE
10
350 400 450 500 550
350 400 450 500 550
V
CE
V
Figure 15. Switching Loss vs. VCE
Figure 16. Switching Time vs. VCE
1000
100
10
1000
100
50 ms
100 ms
1 ms
dc operation
1
Single Nonrepetitive
10
1
Pulse T = 25°C
C
0.1
Curves must be derated
linearly with increase
in temperature
V
V
= 15 V, T = 125°C
C
GE
0.01
1
10
100
1000
10000
1
10
100
1000
10000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
CE
Figure 18. Reverse Bias Safe Operating Area
Figure 17. Safe Operating Area
www.onsemi.com
5
NGTB30N120FL2WG
TYPICAL CHARACTERISTICS
6
5
4
3
400
350
300
250
200
150
T = 175°C, I = 30 A
J
F
T = 175°C, I = 30 A
J
F
T = 25°C, I = 30 A
J
F
T = 25°C, I = 30 A
J
F
2
1
100
50
100
300
500
700
900
1100
100
300
500
700
900
1100
di /dt, DIODE CURRENT SLOPE (A/ms)
F
di /dt, DIODE CURRENT SLOPE (A/ms)
F
Figure 19. trr vs. diF/dt
(VR = 400 V)
Figure 20. Qrr vs. diF/dt
(VR = 400 V)
60
3.00
2.75
2.50
2.25
2.00
1.75
1.50
I = 60 A
F
50
40
30
T = 175°C, I = 30 A
J
F
I = 30 A
F
T = 25°C, I = 30 A
J
F
I = 15 A
F
20
10
1.25
1.00
100
300
500
700
900
1100
−75 −50 −25
0
25 50 75 100 125 150 175 200
di /dt, DIODE CURRENT SLOPE (A/ms)
F
T , JUNCTION TEMPERATURE (°C)
J
Figure 21. Irm vs. diF/dt
(VR = 400 V)
Figure 22. VF vs. TJ
www.onsemi.com
6
NGTB30N120FL2WG
TYPICAL CHARACTERISTICS
250
200
150
100
50
V
CE
= 600 V, R = 10 W, V = 0/15 V
G GE
T
C
= 80°C
T
C
= 110°C
0
0.01
0.1
1
10
100
1000
FREQUENCY (kHz)
Figure 23. Collector Current vs. Switching
Frequency
1
0.1
R
= 0.334
q
JA
50% Duty Cycle
20%
10%
5%
R
C
R
C
R
C
Junction
Case
1
1
2
2
n
R (°C/W) C (J/°C)
i
i
0.045588 0.006937
0.046214 0.021638
0.035542 0.088972
0.122522 0.081618
0.080831 0.391221
0.003250 30.76872
0.01
2%
n
0.001
0.0001
Duty Factor = t /t
1
2
Single Pulse
1E−05
Peak T = P
x Z
+ T
JC
q
J
DM
C
1E−06
0.0001
0.001
ON−PULSE WIDTH (s)
0.01
0.1
1
Figure 24. IGBT Transient Thermal Impedance
1
0.1
R
= 0.500
q
JC
50% Duty Cycle
20%
10%
R (°C/W) C (J/°C)
i
i
R
R
R
Junction
Case
1
2
n
5%
2%
0.007703 0.000130
0.010613 0.000942
0.010097 0.003132
0.032329 0.003093
0.01
0.001
0.006758
0.022635
0.046791
0.044179
Single Pulse
C
C
C
n
1
2
0.083870 0.119232
Duty Factor = t /t
1
2
0.703706
0.460033
0.044938
0.217376
Peak T = P
x Z
+ T
JC C
q
J
DM
1E−06
1E−05
0.0001
0.001
0.01
0.1
1
ON−PULSE WIDTH (s)
Figure 25. Diode Transient Thermal Impedance
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE D
DATE 17 MAR 2017
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
SCALE 1:1
SEATING
PLANE
M
M
B A
0.635
B
A
NOTE 4
E
NOTE 6
P
A
E2/2
Q
S
E2
NOTE 4
D
NOTE 3
4
MILLIMETERS
DIM MIN
MAX
5.30
2.60
1.33
2.35
3.40
0.68
21.34
16.25
5.49
1
2
3
A
A1
b
4.70
2.20
1.07
1.65
2.60
0.45
20.80
15.50
4.32
2X
F
L1
b2
b4
c
NOTE 5
L
D
E
E2
e
5.45 BSC
2X b2
c
F
2.655
19.80
3.81
---
20.80
4.32
b4
3X b
A1
L
NOTE 7
L1
P
3.55
3.65
M
M
0.25
B A
e
Q
S
5.40
6.20
6.15 BSC
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
XXXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON16119F
TO−247
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明