NGB8206N [ONSEMI]
Ignition IGBT 20 A, 350 V, N−Channel D2PAK; 点火IGBT 20 A， 350 V， N沟道D2PAK
| 型号： | NGB8206N |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT 20 A, 350 V, N−Channel D2PAK |
| 文件： | 总7页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGB8206N
Ignition IGBT
20 A, 350 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
20 AMPS, 350 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
C
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
R
G
G
• Low Saturation Voltage
R
GE
• High Pulsed Current Capability
• Optional Gate Resistor (R ) and Gate−Emitter Resistor (R
• Pb−Free Packages are Available
)
G
GE
E
MARKING DIAGRAM
Applications
4 Collector
• Ignition Systems
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
GB
8206NG
AYWW
J
1
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol
Value
390
Unit
V
2
D PAK
V
CES
CER
CASE 418B
STYLE 4
1
Gate
3
V
390
V
Emitter
2
V
$15
V
GE
Collector
Collector Current−Continuous
I
20
50
A
A
C
DC
AC
GB8206N = Device Code
@ T = 25°C − Pulsed
C
A
= Assembly Location
Continuous Gate Current
I
I
1.0
20
mA
mA
kV
G
G
Y
= Year
WW
G
= Work Week
= Pb−Free Package
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
ESD
ESD
2.0
ESD (Human Body Model)
R = 1500 W, C = 100 pF
kV
ORDERING INFORMATION
8.0
†
50 Units / Rail
50 Units / Rail
Device
Package
Shipping
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
2
NGB8206N
D PAK
Total Power Dissipation @ T = 25°C
P
150
1.0
W
W/°C
C
D
Derate above 25°C
2
NGB8206NG
D PAK
(Pb−Free)
Operating & Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
2
NGB8206NT4
D PAK
800 / Tape & Reel
800 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
NGB8206NT4G
D PAK
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 6
NGB8206N/D
NGB8206N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
mJ
AS
V
V
V
= 50 V, V = 5.0 V, Pk I = 16.7 A, L = 1.8 mH, R = 1 kW Starting T = 25°C
250
200
180
CC
CC
CC
GE
GE
L
L
L
g
J
= 50 V, V = 5.0 V, Pk I = 14.9 A, L = 1.8 mH, R = 1 kW Starting T = 150°C
g
J
= 50 V, V = 5.0 V, Pk I = 14.1 A, L = 1.8 mH, R = 1 kW Starting T = 175°C
GE
g
J
Reverse Avalanche Energy
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C
E
mJ
AS(R)
V
2000
CC
GE
L
J
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
R
1.0
62.5
275
°C/W
°C/W
°C
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 2)
T
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
Collector−Emitter Clamp Voltage
BV
I
= 2.0 mA
= 10 mA
T = −40°C to 175°C
325
340
350
365
375
390
V
CES
C
J
I
T = −40°C to 175°C
J
C
Zero Gate Voltage Collector Current
I
V
= 15 V,
CE
GE
mA
CES
T = 25°C
J
0.1
1.0
V
= 0 V
T = 25°C
0.5
1.0
0.4
30
1.5
25
10
100*
5.0
39
J
V
= 175 V,
GE
CE
T = 175°C
J
V
= 0 V
T = −40°C
J
0.8
35
Reverse Collector−Emitter Clamp Voltage
Reverse Collector−Emitter Leakage Current
B
T = 25°C
J
V
VCES(R)
T = 175°C
35
39
45*
37
I
= −75 mA
= −24 V
J
C
T = −40°C
J
30
33
I
T = 25°C
J
0.05
1.0
0.005
12
0.25
12.5
0.03
12.5
300
70
0.5
25
mA
CES(R)
T = 175°C
J
V
CE
T = −40°C
J
0.25
14
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor (Optional)
BV
I
= $5.0 mA
T = −40°C to 175°C
V
mA
W
GES
G
J
I
V
= $5.0 V
T = −40°C to 175°C
200
350*
GES
GE
J
R
G
T = −40°C to 175°C
J
Gate−Emitter Resistor
R
GE
T = −40°C to 175°C 14.25
J
16
25
kW
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
T = 25°C
1.5
0.7
1.7
3.8
1.8
1.0
2.0
4.6
2.1
1.3
V
GE(th)
J
I
= 1.0 mA,
C
V
T = 175°C
J
= V
GE
CE
T = −40°C
J
2.3*
6.0
Threshold Temperature Coefficient (Negative)
mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
NGB8206N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage
V
T = 25°C
0.95
0.70
1.0
1.15
0.95
1.30
1.25
1.05
1.4
1.35
1.15
1.40
1.45
1.25
1.50
1.4
V
CE(on)
J
I
= 6.5 A,
GE
C
T = 175°C
J
V
= 3.7 V
T = −40°C
J
T = 25°C
J
0.95
0.8
I
V
= 9.0 A,
C
T = 175°C
J
= 3.9 V
GE
T = −40°C
J
1.1
T = 25°C
J
0.85
0.7
1.15
0.95
1.3
I
V
= 7.5 A,
C
T = 175°C
J
1.2
= 4.5 V
GE
T = −40°C
J
1.0
1.6*
1.6
T = 25°C
J
1.0
1.3
I
= 10 A,
C
T = 175°C
0.8
1.05
1.4
1.4
J
V
= 4.5 V
GE
T = −40°C
J
1.1
1.7*
1.7
T = 25°C
J
1.15
1.0
1.45
1.3
I
= 15 A,
= 4.5 V
C
T = 175°C
J
1.55
1.8*
1.9
V
GE
T = −40°C
J
1.25
1.3
1.55
1.6
T = 25°C
J
I
= 20 A,
C
T = 175°C
J
1.2
1.5
1.8
V
= 4.5 V
GE
T = −40°C
1.4
1.75
18
2.0*
25
J
Forward Transconductance
gfs
I
= 6.0 A,
CE
T = 25°C
J
10
Mhos
pF
C
V
= 5.0 V
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
1100
70
1300
80
1500
90
f = 10 kHz, V
25 V
=
=
CE
Output Capacitance
C
OSS
C
RSS
T = 25°C
J
Transfer Capacitance
18
20
22
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
t
t
t
T = 25°C
J
6.0
6.0
4.0
8.0
3.0
5.0
1.5
5.0
1.0
1.0
4.0
3.0
8.0
8.0
6.0
10.5
5.0
7.0
3.0
7.0
1.5
1.5
6.0
5.0
10
10
mSec
d(off)
V
= 300 V, I
C
9.0 A
CC
T = 175°C
J
R
= 1.0 kW, R
= 33 W
G
L
Fall Time (Resistive)
Turn−Off Delay Time (Inductive)
Fall Time (Inductive)
Turn−On Delay Time
Rise Time
t
T = 25°C
J
8.0
14
f
V
= 5 V
GE
T = 175°C
J
T = 25°C
J
7.0
9.0
4.5
10
d(off)
V
= 300 V, I
9.0 A
=
C
CC
T = 175°C
J
R
= 1.0 kW, L =
300 mH
V
G
t
T = 25°C
J
f
= 5 V
GE
T = 175°C
J
T = 25°C
J
2.0
2.0
8.0
7.0
d(on)
V
= 14 V, I
=
C
CC
9.0 A
T = 175°C
J
R
= 1.0 kW, R
= 1.5 W
G
L
t
T = 25°C
J
r
V
= 5 V
GE
T = 175°C
J
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
NGB8206N
TYPICAL ELECTRICAL CHARACTERISTICS
400
350
300
250
200
150
100
50
30
25
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
GE
T = 25°C
J
G
L = 1.8 mH
20
15
10
5
T = 175°C
J
L = 3.0 mH
L = 10 mH
V
V
R
= 14 V
= 5.0 V
= 1000 W
CC
GE
G
0
0
0
2
6
8
10
−50 −25
0
25
50
75 100
150 175
125
4
INDUCTOR (mH)
T , JUNCTION TEMPERATURE (°C)
J
Figure 1. Self Clamped Inductive Switching
Figure 2. Open Secondary Avalanche Current
vs. Temperature
2.0
60
50
40
30
20
10
0
V
= 10 V
4.5 V
4 V
GE
I
= 25 A
C
1.75
5 V
I
I
I
= 20 A
= 15 A
= 10 A
C
C
C
1.5
1.25
1.0
T = 175°C
J
3.5 V
I
= 7.5 A
C
3 V
0.75
0.5
2.5 V
0.25
V
= 4.5 V
GE
0.0
0
1
2
3
4
5
6
7
8
−50 −25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 3. Collector−to−Emitter Voltage vs.
Figure 4. Collector Current vs.
Junction Temperature
Collector−to−Emitter Voltage
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 10 V
V
= 10 V
GE
4.5 V
4.5 V
GE
4 V
4 V
5 V
5 V
T = 25°C
3.5 V
3 V
T = −40°C
J
J
3.5 V
3 V
2.5 V
7
2.5 V
0
1
2
3
4
5
6
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 5. Collector Current vs.
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
Collector−to−Emitter Voltage
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4
NGB8206N
TYPICAL ELECTRICAL CHARACTERISTICS
100000
10000
45
40
35
30
25
20
15
10
5
V
= 5 V
CE
V
= −24 V
CE
1000
100
10
T = 25°C
J
V
= 175 V
CE
1.0
0.1
T = 175°C
J
T = −40°C
J
0
−50 −25
0
25
50
75 100 125 150 175
0
0.5
1
1.5
2
2.5
3
3.5
4
V
, GATE TO EMITTER VOLTAGE (V)
GE
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
10000
1000
100
2.50
2.25
2.00
1.75
1.50
Mean
C
iss
Mean + 4 s
C
oss
C
rss
Mean − 4 s
1.25
1.00
0.75
0.50
10
1.0
0.1
0.25
0
−50 −25
0
25
50
75 100 125 150 175
0
5
10
15
20
25
T , JUNCTION TEMPERATURE (°C)
J
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
12
10
8
12
10
8
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
GE
t
fall
G
I
= 9.0 A
C
t
L = 300 mH
delay
t
delay
6
4
2
0
6
4
2
0
t
fall
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
GE
G
I
= 9.0 A
C
R = 33 W
L
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
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5
NGB8206N
1
Duty Cycle = 0.5
0.2
0.1
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.05
P
(pk)
READ TIME AT t
1
0.02
0.01
t
1
t
T
− T = P
R
(t)
2
J(pk)
A
(pk) qJC
DUTY CYCLE, D = t /t
1
2
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
t,TIME (S)
Figure 13. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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6
NGB8206N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 4:
PIN 1. GATE
P
L
2. COLLECTOR
3. EMITTER
4. COLLECTOR
U
SOLDERING FOOTPRINT*
M
8.38
0.33
1.016
0.04
F
10.66
0.42
5.08
0.20
VIEW W−W
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NGB8206N/D
相关型号：
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