NGB8207ABN [ONSEMI]
Ignition IGBT 20 A, 365 V, N.Channel D2PAK; 点火IGBT 20 A， 365 V， N.Channel D2PAK
| 型号： | NGB8207ABN |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT 20 A, 365 V, N.Channel D2PAK |
| 文件： | 总7页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
20 AMPS, 365 VOLTS
Features
VCE(on) = 1.75 V
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
Typ @ IC = 10 A, VGE . 4.5 V
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
C
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
R
G
G
Microprocessor Devices
• Low Saturation Voltage
R
GE
• High Pulsed Current Capability
• Minimum Avalanche Energy − 500 mJ
E
• Gate Resistor (R ) = 70 W
G
• This is a Pb−Free Device
2
D PAK
CASE 418B
STYLE 4
Applications
• Ignition Systems
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MARKING DIAGRAM
Rating
Collector−Emitter Voltage
Gate−Emitter Voltage
Symbol
Value
365
Unit
V
4
Collector
V
CES
V
GE
$15
V
NGB
8207AxG
AYWW
Collector Current−Continuous
I
20
50
A
A
C
DC
AC
@ T = 25°C − Pulsed
C
Continuous Gate Current
I
I
1.0
20
mA
mA
kV
G
1
Gate
3
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
G
Emitter
2
ESD
ESD
2.0
Collector
ESD (Human Body Model)
R = 1500 W, C = 100 pF
kV
NGB8207Ax = Device Code
x = N or B
8.0
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ T = 25°C
P
D
165
1.1
W
W/°C
C
Derate above 25°C (Note 1)
Operating & Storage Temperature Range
T , T
−55 to
+175
°C
J
stg
ORDERING INFORMATION
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
NGB8207ANT4G
D PAK
800 / Tape & Reel
800 / Tape & Reel
(Pb−Free)
2
NGB8207ABNT4G
D PAK
1. Assuming infinite heatsink Case−to−Ambient
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
December, 2011 − Rev. 1
NGB8207AN/D
NGB8207AN, NGB8207ABN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−40° ≤ T ≤ 150°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
AS
mJ
V
CC
V
CC
= 50 V, V = 10 V, Pk I = 16.5 A, L = 3.7 mH, R = 1 kW Starting T = 25°C
500
306
GE
GE
L
L
g
J
= 50 V, V = 10 V, Pk I = 10 A, L = 6.1 mH, R = 1 kW Starting T = 125°C
g
J
Reverse Avalanche Energy
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C
E
AS(R)
mJ
V
CC
2000
GE
L
J
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
R
0.9
50
°C/W
°C/W
°C
q
q
JC
JA
L
Thermal Resistance, Junction−to−Ambient (Note 2)
R
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3)
T
275
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
Collector−Emitter Clamp Voltage
BV
I
= 2.0 mA
= 10 mA
T = −40°C to 150°C
325
340
350
365
375
390
V
CES
C
J
I
T = −40°C to 150°C
J
C
Zero Gate Voltage Collector Current
I
V
= 24 V
= 0 V
mA
CES
CE
GE
T = 25°C
J
0.1
2.0
V
T = 25°C
−
−
1.0
10
5
125
2.5
29
J
V
= 250 V
GE
CE
T = 150°C
J
V
= 0 V
T = −40°C
J
−
0.25
27
Reverse Collector−Emitter Clamp Voltage
Reverse Collector−Emitter Leakage Current
B
T = 25°C
J
25
25
24
−
V
VCES(R)
T = 150°C
J
29
31
I
= −75 mA
= −24 V
C
T = −40°C
J
26
29
I
T = 25°C
J
0.5
25
1.1
40
mA
CES(R)
T = 150°C
J
20
−
V
CE
T = −40°C
J
0.03
13
1.0
14.5
1000
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
BV
I
= $5.0 mA
T = −40°C to 150°C
12
500
V
mA
W
GES
G
J
I
V
= $10 V
T = −40°C to 150°C
700
70
GES
GE
J
R
T = −40°C to 150°C
J
G
Gate−Emitter Resistor
R
T = −40°C to 150°C 14.25
J
16
25
kW
GE
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V
T = 25°C
1.2
0.7
1.4
−
1.5
1.0
1.7
4.0
1.5
1.4
1.6
0.62
2.0
1.3
V
GE(th)
J
I
= 1.0 mA
C
T = 150°C
J
V
= V
GE
CE
T = −40°C
J
2.0
Threshold Temperature Coefficient (Negative)
−
mV/°C
Collector−to−Emitter On−Voltage
V
CE(on)
T = 25°C
J
1.15
1.2
1.2
−
1.75
1.75
1.75
1.0
V
I
= 6.0 A
GE
C
T = 150°C
J
V
= 4.0 V
T = −40°C
J
I
V
= 10 mA
T = 25°C
J
C
= 4.5 V
GE
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
NGB8207AN, NGB8207ABN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
V
T = 25°C
1.2
1.4
1.4
1.35
1.5
1.5
1.35
1.5
1.5
1.35
1.4
1.4
−
1.65
1.6
2.0
2.0
2.0
2.2
2.2
2.2
2.1
2.1
2.1
2.05
2.1
2.1
−
V
CE(on)
J
I
= 8.0 A
C
T = 150°C
J
V
= 4.0 V
GE
T = −40°C
J
1.7
T = 25°C
J
1.8
I
= 10 A
= 3.7 V
C
T = 150°C
J
1.9
V
GE
T = −40°C
J
1.85
1.8
T = 25°C
J
I
= 10 A
= 4.0 V
C
T = 150°C
J
1.8
V
GE
T = −40°C
J
1.8
T = 25°C
J
1.75
1.75
1.8
I
= 10 A
= 4.5 V
C
T = 150°C
J
V
GE
T = −40°C
J
Forward Transconductance
gfs
I
C
= 6.0 A
= 5.0 V
T = 25°C
J
15.8
Mhos
pF
V
CE
DYNAMIC CHARACTERISTICS
Input Capacitance
C
750
75
4
810
90
7
900
105
12
ISS
f = 10 kHz
V
Output Capacitance
C
C
T = 25°C
J
OSS
RSS
= 25 V
CE
Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn−On Delay Time (Resistive)
t
t
t
t
T = 25°C
0.5
2.0
2.0
8.0
0.5
0.7
4.0
6.0
0.55
2.32
2.5
10
0.7
2.7
3.0
13
mSec
d(on)
J
V
= 14 V
CE
L
Low Voltage
R = 1.0 W
V
GE
= 5.0 V
= 1000 W
Rise Time (Resistive)
Low Voltage
t
r
T = 25°C
J
R
G
Turn−Off Delay Time (Resistive)
Low Voltage
T = 25°C
J
d(off)
V
CE
= 14 V
R = 1.0 W
L
V
GE
= 5.0 V
= 1000 W
Fall Time (Resistive)
Low Voltage
t
f
T = 25°C
J
R
G
Turn−On Delay Time (Resistive)
High Voltage
T = 25°C
J
0.65
1.8
4.7
10
0.75
2.0
6.0
15
d(on)
V
= 300 V
CE
R = 46 W
L
V
= 5.0 V
= 1000 W
GE
Rise Time (Resistive)
High Voltage
t
r
T = 25°C
J
R
G
Turn−Off Delay Time (Resistive)
High Voltage
V
= 300 V
T = 25°C
J
d(off)
CE
R = 46 W
L
V
= 5.0 V
= 1000 W
GE
Fall Time (Resistive)
High Voltage
t
f
T = 25°C
J
R
G
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
NGB8207AN, NGB8207ABN
TYPICAL ELECTRICAL CHARACTERISTICS
35
30
35
30
25
20
15
25
20
15
10
25°C
25°C
10
150°C
150°C
5
0
5
0
0
10 20 30 40
50 60 70 80 90 100
L (mH)
0
100 200 300 400 500 600 700 800 900100011001200
CLAMPING TIME (mS)
Figure 1. Typical Self Clamped Inductive
Switching Performance (SCIS)
Figure 2. Typical Self Clamped Inductive
Switching Performance (SCIS)
2.75
2.5
2.75
2.5
V
= 4.0 V
V
GE
= 4.0 V
GE
I
= 20 A
= 16 A
C
2.25
2.0
I
C
2.25
2.0
1.75
1.5
T = −40°C
J
I
= 10 A
C
1.75
1.5
T = 25°C
J
1.25
I
C
= 8.0 A
1.0
T = 175°C
J
I
C
= 6.0 A
0.75
1.25
−40 −20
0
20 40 60 80 100 120 140 160 180
2
4
6
8
10
12
14
16
18
20
I , COLLECTOR CURRENT (A)
C
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. Collector−to−Emitter Voltage vs.
Figure 4. Collector−to−Emitter Voltage vs.
Collector Current
Junction Temperature
60
50
40
30
20
60
50
40
30
20
5.0 V
V
= 6.0 V
V
= 6.0 V
5.0 V
GE
GE
4.5 V
V
V
= 4.5 V
= 4.0 V
GE
V
GE
= 4.0 V
GE
V
V
V
= 3.5 V
= 3.0 V
GE
V
V
V
= 3.5 V
= 3.0 V
GE
GE
GE
10
0
10
0
= 2.5 V
9 10
GE
= 2.5 V
9 10
GE
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
Figure 5. On−Region Characteristics
@ TJ = 255C
Figure 6. On−Region Characteristics
@ TJ = −405C
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4
NGB8207AN, NGB8207ABN
TYPICAL ELECTRICAL CHARACTERISTICS
60
60
50
40
30
20
V
CE
≥ 5.0 V
T = −40°C
J
6.0 V
50
40
30
20
5.0 V
4.5 V
T = 25°C
J
T = 175°C
J
4.0 V
3.5 V
3.0 V
10
0
10
0
V
= 2.5 V
GE
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
6
7
8
9
10
V
CE
, COLLECTOR−TO−EMITTER VOLTAGE (V)
V
GE
, GATE−TO−EMITTER VOLTAGE (V)
Figure 7. On−Region Characteristics
@ TJ = 1755C
Figure 8. Transfer Characteristics
2.0
1.75
1.5
10,000
1000
100
I
C
= 1 mA, V = V
CE GE
V
CE
= −24 V
1.25
1.0
V
= 320 V
CE
10
1
0.75
0.5
V
= 250 V
CE
0.1
−40 −20
0
20 40 60 80 100 120 140 160 180
−40 −20
0
20 40 60 80 100 120 140 160 180
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 9. Collector−to−Emitter Leakage
Figure 10. Gate Threshold Voltage vs.
Temperature
Current vs. Junction Temperature
10,000
1000
100
10
T = 25°C
J
t
r
V
GE
= 0 V
t
d(off)
C
iss
t
f
1
t
d(on)
C
oss
V
V
= 14 V
= 5.0 V
CC
10
1
GE
R = 1.0 W
R
L
C
rss
= 1 kW
G
0.1
0
20 40 60 80 100 120 140 160 180 200
−40 −15
10
35
60
85 110 135 160 185
COLLECTOR−TO−EMITTER VOLTAGE (V)
TEMPERATURE (°C)
Figure 11. Capacitance Variation
Figure 12. Resistive Switching Time Variation
vs. Temperature
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5
NGB8207AN, NGB8207ABN
TYPICAL ELECTRICAL CHARACTERISTICS
100
10
V
= 4.0 V
GE
Single Pulse
= 25°C
T
C
10 ms
100 ms
1 ms
V
CE(on)
LIMIT
10 ms
1
THERMAL LIMIT
PACKAGE LIMIT
dc
Mounted on 2″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
0.1
1
10
100
1000
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Forward Biased Safe Operating
Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
0.05
P
(pk)
READ TIME AT t
1
0.02
0.01
t
1
t
2
T
J(pk)
− T = P
R
q
(t)
JC
A
(pk)
DUTY CYCLE, D = t /t
1
2
Single Pulse
0.00001
0.01
0.000001
0.0001
0.001
0.01
0.1
1
t,TIME (S)
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
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6
NGB8207AN, NGB8207ABN
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
K
L
J
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
0.13 (0.005)
T B
STYLE 4:
PIN 1. GATE
P
L
2. COLLECTOR
3. EMITTER
4. COLLECTOR
U
SOLDERING FOOTPRINT*
M
8.38
0.33
1.016
0.04
F
10.66
0.42
5.08
0.20
VIEW W−W
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NGB8207AN/D
相关型号：
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