NGB8204NT4G [ONSEMI]
Ignition IGBT 18 Amps, 400 Volts; 点火IGBT 18安培， 400伏
| 型号： | NGB8204NT4G |
| 厂家： | 
ONSEMI |
| 描述： | Ignition IGBT 18 Amps, 400 Volts |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NGB8204N
Ignition IGBT
18 Amps, 400 Volts
N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
http://onsemi.com
18 AMPS, 400 VOLTS
VCE(on) 3 2.0 V @
IC = 10 A, VGE . 4.5 V
Features
C
• Ideal for Coil−on−Plug Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
G
• Integrated ESD Diode Protection
R
GE
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
E
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
2
D PAK
CASE 418B
STYLE 4
• High Pulsed Current Capability
• Integrated Gate−Emitter Resistor (R
• Emitter Ballasting for Short−Circuit Capability
• Pb−Free Package is Available
)
1
GE
MARKING DIAGRAM
4
Collector
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Symbol
Value
430
430
18
Unit
GB
8204NG
AYWW
V
CES
V
CER
V
V
V
DC
DC
DC
V
1
3
GE
Gate
Emitter
2
Collector Current−Continuous
I
18
50
A
DC
A
AC
C
Collector
@ T = 25°C − Pulsed
C
GB8204N = Device Code
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
A
= Assembly Location
8.0
Y
= Year
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
800
V
WW
G
= Work Week
= Pb−Free Package
Total Power Dissipation @ T = 25°C
P
115
0.77
W
W/°C
C
D
Derate above 25°C
ORDERING INFORMATION
Operating and Storage Temperature Range T , T
−55 to
+175
°C
J
stg
†
Device
Package
Shipping
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
NGB8204NT4
D PAK
800 / Tape & Reel
800 / Tape & Reel
2
NGB8204NT4G
D PAK
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
August, 2006 − Rev. 3
NGB8204N/D
NGB8204N
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T ≤ 175°C)
J
Characteristic
Symbol
Value
Unit
Single Pulse Collector−to−Emitter Avalanche Energy
E
mJ
AS
V
V
= 50 V, V = 5.0 V, Pk I = 21.1 A, L = 1.8 mH, Starting T = 25°C
400
300
CC
CC
GE
GE
L
L
J
= 50 V, V = 5.0 V, Pk I = 18.3 A, L = 1.8 mH, Starting T = 125°C
J
Reverse Avalanche Energy
= 100 V, V = 20 V, Pk I = 25.8 A, L = 6.0 mH, Starting T = 25°C
E
mJ
AS(R)
V
2000
CC
GE
L
J
MAXIMUM SHORT−CIRCUIT TIMES (−55°C ≤ T ≤ 150°C)
J
Short Circuit Withstand Time 1 (See Figure 17, 3 Pulses with 10 ms Period)
Short Circuit Withstand Time 2 (See Figure 18, 3 Pulses with 10 ms Period)
t
t
750
5.0
ms
sc1
sc2
ms
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.3
°C/W
2
Thermal Resistance, Junction−to−Ambient
D PAK (Note 1)
R
50
°C/W
°C
q
JA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds (Note 2)
T
275
L
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. For further details, see Soldering and Mounting Techniques Reference Manua, SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
BV
T = −40°C to 150°C
380
390
−
395
405
2.0
10
420
430
10
V
I
= 2.0 mA
= 10 mA
CES
J
DC
C
I
T = −40°C to 150°C
J
C
Zero Gate Voltage Collector Current
I
I
T = 25°C
J
mA
DC
CES
ECS
V
= 350 V,
GE
CE
T = 150°C
J
−
40*
10
V
= 0 V
T = −40°C
J
−
1.0
0.7
12
Reverse Collector−Emitter Leakage
Current
T = 25°C
J
−
1.0
25*
1.0
37
mA
T = 150°C
J
−
V
= −24 V
CE
T = −40°C
J
−
0.1
33
Reverse Collector−Emitter Clamp
Voltage
B
T = 25°C
J
27
30
25
11
384
10
V
VCES(R)
DC
T = 150°C
J
36
40
I
= −75 mA
C
T = −40°C
J
32
35
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Emitter Resistor
BV
I
= 5.0 mA
T = −40°C to 150°C
13
15
V
GES
G
J
DC
I
V
= 10 V
T = −40°C to 150°C
640
16
700
26
mA
GES
GE
J
DC
R
GE
−
T = −40°C to 150°C
W
k
J
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
T = 25°C
1.1
0.75
1.2
−
1.4
1.0
1.6
3.4
1.9
1.4
2.1*
−
V
GE(th)
J
DC
I
= 1.0 mA,
C
V
T = 150°C
J
= V
GE
CE
T = −40°C
J
Threshold Temperature Coefficient
(Negative)
−
−
−
mV/°C
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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2
NGB8204N
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
ON CHARACTERISTICS (Note 3)
Collector−to−Emitter On−Voltage
V
T = 25°C
1.0
0.9
1.1
1.3
1.2
1.4
1.4
1.5
1.4
1.8
2.0
1.7
1.3
1.3
1.4
8.0
1.4
1.3
1.45
1.6
1.55
1.6
1.8
1.8
1.8
2.2
2.4
2.1
1.8
1.75
1.8
14
1.6
1.6
V
DC
CE(on)
J
I
= 6.0 A,
GE
C
T = 150°C
J
V
= 4.0 V
T = −40°C
J
1.7*
1.9*
1.8
T = 25°C
J
I
V
= 8.0 A,
C
T = 150°C
J
= 4.0 V
GE
T = −40°C
J
1.9*
2.0
T = 25°C
J
I
V
= 10 A,
C
T = 150°C
J
2.0
= 4.0 V
GE
T = −40°C
J
2.1*
2.5
T = 25°C
J
I
V
= 15 A,
C
T = 150°C
J
2.6*
2.5
= 4.0 V
GE
T = −40°C
J
T = 25°C
J
2.0*
2.0*
2.0*
25
I
V
= 10 A,
C
T = 150°C
J
= 4.5 V
GE
T = −40°C
J
Forward Transconductance
gfs
V
= 5.0 V,
= 6.0 A
T = −40°C to 150°C
Mhos
pF
CE
J
I
C
DYNAMIC CHARACTERISTICS
Input Capacitance
C
400
50
800
75
1000
100
10
ISS
T = −40°C to 150°C
V
= 25 V, V = 0 V
f = 1.0 MHz
J
CC
GE
Output Capacitance
C
C
OSS
RSS
Transfer Capacitance
4.0
7.0
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Resistive)
t
t
V
G
= 300 V, I = 6.5 A
T = 25°C
−
−
−
4.0
9.0
0.7
10
15
mSec
mSec
d(off)
CC
C
J
R
= 1.0 kW, R = 46 W,
L
Fall Time (Resistive)
t
V
= 300 V, I = 6.5 A
T = 25°C
J
f
CC
C
R
G
= 1.0 kW, R = 46 W,
L
Turn−On Delay Time
V
= 10 V, I = 6.5 A
T = 25°C
J
4.0
d(on)
CC
C
R
= 1.0 kW,
G
L
R = 1.5 W
Rise Time
t
V
= 10 V, I = 6.5 A
T = 25°C
J
−
4.5
7.0
r
CC
C
R
= 1.0 kW,
G
R = 1.5 W
L
*Maximum Value of Characteristic across Temperature Range.
3. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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3
NGB8204N
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60
50
60
V
= 10 V
GE
5 V
V
= 10 V
GE
50
40
30
20
10
0
5 V
4.5 V
4.5 V
40
30
20
10
0
4 V
T = −40°C
J
4 V
T = 25°C
J
3.5 V
3.5 V
3 V
3 V
2.5 V
2.5 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Output Characteristics
Figure 2. Output Characteristics
60
55
50
45
40
35
30
25
20
15
10
60
50
40
30
20
10
0
V
= 10 V
GE
V
= 10 V
CE
T = 150°C
T = −40°C
J
J
5 V
T = 150°C
J
4.5 V
4 V
T = 25°C
J
3.5 V
3 V
2.5 V
5
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, GATE TO EMITTER VOLTAGE (VOLTS)
GE
Figure 3. Output Characteristics
Figure 4. Transfer Characteristics
4.0
3.5
3
T = 25°C
J
V
= 5 V
GE
2.5
I
= 25 A
= 20 A
= 15 A
= 10 A
= 5 A
C
I
= 15 A
= 10 A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
C
I
C
2
1.5
1
I
C
I
C
I
= 5 A
C
I
C
I
C
0.5
0
−50
−25
0
25
50
75
100
125 150
3
4
5
6
7
8
9
10
T , JUNCTION TEMPERATURE (°C)
J
GATE−TO−EMITTER VOLTAGE (V)
Figure 5. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
Figure 6. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
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4
NGB8204N
10000
3
2.5
2
T = 150°C
J
C
iss
I
I
= 15 A
= 10 A
= 5 A
1000
100
10
C
C
C
oss
1.5
1
I
C
C
rss
1
0
0.5
0
0
20
40 60 80 100 120 140 160 180 200
, COLLECTOR TO EMITTER VOLTAGE (V)
3
4
5
6
7
8
9
10
GATE TO EMITTER VOLTAGE (V)
V
CE
Figure 7. Collector−to−Emitter Voltage versus
Gate−to−Emitter Voltage
Figure 8. Capacitance Variation
30
25
20
15
10
2
1.8
1.6
1.4
1.2
V
V
R
= 50 V
= 5.0 V
= 1000 W
CC
GE
V
+ 4 s
TH
V
TH
G
L = 2 mH
V
− 4 s
TH
1
0.8
0.6
0.4
L = 3 mH
L = 6 mH
5
0
0.2
0
−50 −30 −10
10
30 50 70 90 110 130 150
−50 −25
0
25
50
75 100 125 150 175
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 9. Gate Threshold Voltage versus
Temperature
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
30
25
20
15
10
12
10
8
V
V
R
= 50 V
= 5.0 V
= 1000 W
CC
GE
V
V
R
= 300 V
= 5.0 V
= 1000 W
CC
GE
L = 2 mH
L = 3 mH
G
t
G
f
I
= 10 A
C
L = 300 mH
6
L = 6 mH
t
d(off)
4
5
0
2
0
−50 −25
0
25
50
75 100 125 150 175
−50 −30 −10
10
30 50 70 90 110 130 150
TEMPERATURE (°C)
TEMPERATURE (°C)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
Figure 12. Inductive Switching Fall Time
versus Temperature
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5
NGB8204N
100
10
1
100
DC
DC
10
100 ms
1 ms
1
100 ms
10 ms
1 ms
10 ms
100 ms
100
0.1
0.1
100 ms
0.01
0.01
1
10
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (V)
COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Single Pulse Safe Operating Area
Figure 14. Single Pulse Safe Operating Area
(Mounted on an Infinite Heatsink at TA = 255C)
(Mounted on an Infinite Heatsink at TA = 1255C)
100
10
100
10
t = 1 ms, D = 0.05
1
t = 1 ms, D = 0.05
1
t = 2 ms, D = 0.10
1
t = 2 ms, D = 0.10
1
t = 3 ms, D = 0.30
1
t = 3 ms, D = 0.30
1
1
1
0.1
0.1
0.01
0.01
1
10
100
1000
1
10
100
1000
COLLECTOR−EMITTER VOLTAGE (V)
COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Pulse Train Safe Operating Area
Figure 16. Pulse Train Safe Operating Area
(Mounted on an Infinite Heatsink at TC = 255C)
(Mounted on an Infinite Heatsink at TC = 1255C)
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6
NGB8204N
V
= 16 V
BATT
V
= 16 V
BATT
R = 0.1 W
L
R = 0.1 W
L
L = 10 mH
L = 10 mH
= 1 kW
5.0 V
V
R
G
= 1 kW
IN
R
G
V
5.0 V
IN
R
S
= 55 mW
Figure 17. Circuit Configuration for
Short Circuit Test #1
Figure 18. Circuit Configuration for
Short Circuit Test #2
100
10
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.01
1
0.1
0.01
0.001
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
P
(pk)
Single Pulse
READ TIME AT t
1
t
1
t
T
− T = P
R (t)
q
JA
2
J(pk)
A
(pk)
R
q
JC
@ R(t) for t ≤ 0.2 s
DUTY CYCLE, D = t /t
1
2
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
t,TIME (S)
Figure 19. Transient Thermal Resistance (Non−normalized
Junction−to−Ambient mounted on minimum pad area)
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7
NGB8204N
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE J
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
E
V
W
−B−
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
MAX
A
B
C
D
E
F
G
H
J
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
8.64
9.65 10.29
4.06
0.51
1.14
7.87
9.65
4.83
0.89
1.40
8.89
A
S
1
2
3
2.54 BSC
0.080
0.018 0.025
0.090 0.110
0.110
2.03
0.46
2.29
1.32
7.11
5.00 REF
2.00 REF
0.99 REF
2.79
0.64
2.79
1.83
8.13
−T−
SEATING
PLANE
K
W
J
K
L
G
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625 14.60 15.88
0.045 0.055 1.14 1.40
M
N
P
R
S
V
H
D 3 PL
M
M
T B
0.13 (0.005)
STYLE 4:
PIN 1. GATE
P
U
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
SOLDERING FOOTPRINT*
M
8.38
0.33
F
1.016
0.04
10.66
0.42
VIEW W−W
5.08
0.20
3.05
0.12
17.02
0.67
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NGB8204N/D
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