NFAM3065L4B [ONSEMI]
智能功率模块,SPM31,650 V,30A;型号: | NFAM3065L4B |
厂家: | ONSEMI |
描述: | 智能功率模块,SPM31,650 V,30A 电动机控制 |
文件: | 总10页 (文件大小:386K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Intelligent Power Module
(IPM), 650 V, 30 A
NFAM3065L4B
General Description
The NFAM3065L4B is a fully-integrated inverter power module
consisting of an independent High side gate driver, LVIC, six IGBT’s
and a temperature sensor (VTS), suitable for driving permanent
magnet synchronous (PMSM) motors, brushless DC (BLDC) motors
and AC asynchronous motors. The IGBT’s are configured in a
three-phase bridge with separate emitter connections for the lower
legs for maximum flexibility in the choice of control algorithm.
The power stage has under voltage lockout protection (UVP).
Internal boost diodes are provided for high side gate boost drive.
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Features
• Three-phase 650 V, 30 A IGBT Module with Independent Drivers
• Active Logic Interface
• Built-in Undervoltage Protection (UVP)
• Integrated Bootstrap Diodes and Resistors
• Separate Low-side IGBT Emitter Connections for Individual
Current Sensing of Each Phase
DIP39 54.5 x 31.0
CASE MODGX
• Temperature Sensor (VTS)
• UL1557 Certified (File No.339285)
• This Device is Pb−Free and RoHS Compliant
MARKING DIAGRAM
Typical Applications
• Industrial Drives
• Industrial Pumps
• Industrial Fans
NFAM3065L4B
ZZZATYWW
Device marking is on package top side
NFAM3065L4B = Specific Device Code
• Industrial Automation
ZZZ
A
T
Y
WW
= Assembly Lot Code
= Assembly Location
= Test Location
= Year
P
U
V
W
VS(U)
VB(U)
High Side
HVI C1
HS1
HS2
HS3
VDD(UH)
HIN(U)
= Work Week
VS(V)
VB(V)
High Side
HVI C2
HS1
LS1
HS2
LS2
HS3
LS3
VDD(VH)
HIN(V)
ORDERING INFORMATION
VS(W)
VB(W)
High Side
HVI C3
VDD(WH)
HIN(W)
Device
Package
Shipping
90 / Box
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
CFOD
CIN
VSS
NFAM3065L4B
DIP39
LS1
LS2
LS3
54.5 x 31.0
(Pb-Free)
Low Side
LVIC
with
Protection
VDD(L)
NU
NV
NW
Figure 1. Application Schematic
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
April, 2020 − Rev. 1
NFAM3065L4B/D
NFAM3065L4B
APPLICATION SCHEMATIC
VB(U) (3)
VS(U) (1)
N.C (38)
P (37)
CS
+
C1
VB
HIN(U) (6)
HIN
HOUT
HVIC1
HVIC2
HVIC3
VDD(UH) (4)
VDD
VSS
U (36)
V (35)
W (34)
VS
VB(V) (9)
VS(V) (7)
VB
HOUT
HIN(V) (12)
HIN
VDD(VH) (10)
VDD
VSS
Motor
VS
VB(W) (15)
VS(W) (13)
M C U
VB
HIN(W) (18)
HIN
HOUT
VDD(WH) (16)
VDD
VSS
VS
VTS (20)
VTS
OUT(U)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
LIN(U)
LIN(V)
LIN(W)
NU (33)
NV (32)
NW (31)
5 V line
LVIC
OUT(V)
VFO (24)
CFOD (25)
CIN (26)
VFO
CFOD
CIN
15 V line
VDD(L) (28)
VDD
OUT(W)
VSS (27)
VSS
Signal for over current trip
Phase current
Figure 2. Application Schematic − Adjustable Option
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2
NFAM3065L4B
BLOCK DIAGRAM
N.C (38)
P (37)
VS(U) (1)
VB(U) (3)
VB
VDD(UH) (4)
HIN(U) (6)
HOUT
VDD
HVIC1
HIN
VS
VSS
U (36)
V (35)
W (34)
VS(V) (7)
VB(V)(9)
VB
VDD(VH) (10)
HIN(V) (12)
HOUT
VDD
HVIC2
HIN
VS
VSS
VS(W) (13)
VB(W) (15)
VB
VDD(WH) (16)
HIN(W) (18)
HOUT
VDD
HVIC3
HIN
VS
VSS
OUT(U)
VTS
VTS (20)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
VFO (24)
LIN(U)
LIN(V)
LIN(W)
NU (33)
NV (32)
NW (31)
LVIC
OUT(V)
VFO
CFOD
CIN
CFOD (25)
CIN (26)
VSS
VDD
VSS (27)
OUT(W)
VDD(L) (28)
Figure 3. Equivalent Block Diagram
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3
NFAM3065L4B
PIN FUNCTION DESCRIPTION
Pin
1
Name
VS(U)
−
Description
High−Side Bias Voltage GND for U phase IGBT Driving
Dummy
(2)
3
VB(U)
VDD(UH)
−
High−Side Bias Voltage for U phase IGBT Driving
High−Side Bias Voltage for U phase IC
Dummy
4
(5)
6
HIN(U)
VS(V)
−
Signal Input for High−Side U Phase
High−Side Bias Voltage GND for V phase IGBT Driving
Dummy
7
(8)
9
VB(V)
VDD(VH)
−
High−Side Bias Voltage for V phase IGBT Driving
High−Side Bias Voltage for V phase IC
Dummy
10
(11)
12
13
(14)
15
16
(17)
18
(19)
20
21
22
23
24
25
26
27
28
(29)
(30)
31
32
33
34
35
36
37
38
(39)
HIN(V)
VS(W)
−
Signal Input for High−Side V Phase
High−Side Bias Voltage GND for W phase IGBT Driving
Dummy
VB(W)
VDD(WH)
−
High−Side Bias Voltage for W phase IGBT Driving
High−Side Bias Voltage for W phase IC
Dummy
HIN(W)
−
Signal Input for High−Side W Phase
Dummy
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
CFOD
CIN
Voltage Output for LVIC Temperature Sensing Unit
Signal Input for Low−Side U Phase
Signal Input for Low−Side V Phase
Signal Input for Low−Side W Phase
Fault Output
Capacitor for Fault Output Duration Selection
Input for Current Protection
Low−Side Common Supply Ground
Low−Side Bias Voltage for IC and IGBTs Driving
Dummy
VSS
VDD(L)
−
−
Dummy
NW
Negative DC−Link Input for U Phase
Negative DC−Link Input for V Phase
Negative DC−Link Input for W Phase
Output for U Phase
NV
NU
W
V
Output for V Phase
U
Output for W Phase
P
Positive DC−Link Input
N.C
No Connection
−
Dummy
1. Pins of () are the dummy for internal connection. These pins should be no connection.
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4
NFAM3065L4B
ABSOLUTE MAXIMUM RATINGS (T = 25°C) (Note 2)
C
Symbol
VPN
Rating
Supply Voltage
Supply Voltage (Surge)
Conditions
Value
450
Unit
V
P−NU, NV, NW
VPN(surge)
VPN(PROT)
P−NU, NV, NW (Note 3)
550
V
Self Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VDD = VBS = 13.5 V ~ 16.5 V,
Tj = 150°C, VCES < 650 V,
Non-Repetitive, < 2 ms
400
V
Vces
VRRM
Ic
Collector−emitter voltage
650
650
V
V
A
A
V
V
Maximum Repetitive Revers Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Control Supply Voltage
30
Icp
Under 1 ms Pulse Width
60
VDD
VBS
VDD(UH,VH,WH), VDD(L)−VSS
−0.3 to 20
−0.3 to 20
High−Side Control Bias Voltage
VB(U)−VS(U), VB(V)−VS(V),
VB(W)−VS(W)
VIN
Input Signal Voltage
HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),
LIN(W)–VSS
−0.3 to VDD
V
VFO
IFO
VCIN
Pc
Fault Output Supply Voltage
Fault Output Current
VFO–VSS
−0.3 to VDD
2
V
mA
V
Sink Current at VFO pin
CIN–VSS
Current Sensing Input Voltage
Corrector Dissipation
−0.3 to VDD
113
Per One Chip
W
Tj
Operating Junction Temperature
Storage temperature
−40 to +150
−40 to +125
−40 to +125
2500
°C
Tstg
Tc
°C
Module Case Operation Temperature
Isolation voltage
°C
Viso
60 Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat Sink Plate
V rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
THERMAL CHARACTERISTICS
Symbol
Rating
Conditions
Min
−
Typ
−
Max
1.1
Unit
°C/W
°C/W
R
Junction-to-Case Thermal
Resistance
Inverter IGBT Part (per 1/6 module)
Inverter FWD Part (per 1/6 module)
th(j-c)Q
R
−
−
2.2
th(j-c)F
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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5
NFAM3065L4B
RECOMMENDED OPERATING CONDITIONS
Symbol
VPN
Rating
Supply Voltage
Conditions
Min
−
Typ
300
15
Max
400
Unit
V
P−NU, NV, NW
VDD
Gate Driver Supply
Voltages
VDD(UH,VH,WH), VDD(L)−VSS
13.5
13.0
16.5
18.5
V
VBS
VB(U)−VS(U), VB(V)−VS(V),
15
V
VB(W)−VS(W)
dVDD / dt,
dVBS / dt
Supply Voltage Variation
−1
−
1
V/ms
fPWM
DT
PWM Frequency
Dead Time
1
1.5
−
−
−
−
20
−
kHz
ms
Turn-off to Turn-on (external)
Io
Allowable r.m.s. Current
VPN = 300 V,
VDD = 15 V,
P.F. = 0.8
f
= 5 kHz
25.7
A rms
PWM
Tc ≤ 125°C,
Tj ≤ 150°C
(Note 5)
f
= 15 kHz
−
−
18.8
PWM
PWIN (on)
PWIN (off)
Allowable Input Pulse
Width
200 V ≤ VPN ≤ 400 V
13.5 V ≤ VDD ≤ 16.5 V
13.0 V ≤ VBS ≤ 18.5 V
−20°C ≤ Tc ≤ 100°C
1.0
1.5
0.6
−
−
−
−
ms
Package Mounting Torque
M3 type screw
0.7
0.9
Nm
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Allowable r.m.s current depends on the actual conditions.
6. Flatness tolerance of the heatsink should be within −50 mm to +100 mm.
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
INVERTER SECTION
Ices
Collector−Emitter Leakage
Current
Vce = Vces , Tj = 25°C
−
−
−
−
−
1
mA
mA
V
Vce = Vces, Tj = 150°C
10
VCE(sat)
Collector−Emitter Saturation
Voltage
VDD = VBS = 15 V, IN = 5 V
Ic = 30 A, Tj = 25°C
1.60
2.30
VDD = VBS = 15 V, IN = 5 V
−
1.80
−
V
Ic = 30 A, Tj = 150°C
VF
FWDi Forward Voltage
IN = 0 V, If = 30 A, Tj = 25°C
IN = 0 V, If = 30 A, Tj = 150°C
−
−
2.00
2.00
1.25
0.25
1.60
0.25
0.15
1.40
0.25
1.60
0.25
0.10
2.40
−
V
V
ton
tc(on)
toff
High side
Switching
Times
VPN = 300 V, VDD(H) = VDD(L) = 15 V
Ic = 30 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
0.80
−
1.85
0.65
2.20
0.75
−
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
−
tc (off)
trr
−
−
ton
Low side
Switching
Times
VPN = 300 V, VDD(H) = VDD(L) = 15 V
Ic = 30 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
0.80
−
2.00
0.55
2.20
0.75
−
tc(on)
toff
−
tc(off)
trr
−
−
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6
NFAM3065L4B
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7) (continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRIVER SECTION
IQDDH
Quiescent VDD Supply Current VDD(UH,VH,WH) = 15 V,
HIN(U,V,W) = 0 V
VDD(UH)−VSS
VDD(VH)−VSS
VDD(WH)−VSS
−
−
0.30
mA
IQDDL
IPDDH
VDD(L) = 15 V,
LIN(U,V,W) = 0 V
VDD(L)–VSS
−
−
−
−
3.50
0.40
mA
mA
Operating VDD Supply Current VDD(UH,VH,WH) = 15 V,
VDD(UH)−VSS
fPWM = 20 kHz, Duty = 50%, VDD(VH)−VSS
Applied to one PWM Signal VDD(WH)−VSS
Input for High−Side
IPDDL
VDD(L) = 15 V,
VDD(L)−VSS
−
−
6.00
mA
fPWM = 20 kHz, Duty = 50%,
Applied to one PWM Signal
Input for Low−Side
IQBS
IPBS
Quiescent VBS Supply Current VBS = 15 V,
VB(U)−VS(U)
VB(V)−VS(V)
VB(W)−VS(W)
−
−
−
−
0.30
5.00
mA
mA
HIN(U,V,W) = 0 V
Operating VBS Supply Current VDD = VBS = 15 V,
VB(U)−VS(U)
fPWM = 20 kHz, Duty = 50%, VB(V)−VS(V)
Applied to one PWM Signal VB(W)−VS(W)
Input for High−Side
VIN(ON)
VIN(OFF)
VCIN(ref)
UVDDD
UVDDR
UVBSD
UVBSR
VTS
ON Threshold voltage
OFF Threshold voltage
Short Circuit Trip Level
HIN(U,V,W)−VSS, LIN(U,V,W)−VSS
−
−
2.6
−
V
V
V
V
V
V
V
V
0.8
−
0.48
−
VDD = 15 V, CIN−VSS
Detection Level
0.46
10.3
10.8
10.0
10.5
0.905
0.50
12.5
13.0
12.0
12.5
1.155
Supply Circuit
Under-Voltage Protection
Reset Level
−
Detection Level
−
Reset Level
−
Voltage Output for LVIC
Temperature Sensing Unit
VTS−VSS = 10 nF, Temp. = 25°C
1.030
VFOH
VFOL
Fault Output Voltage
VDD = 0 V, CIN = 0 V,
VFO Circuit: 10 kW to 5 V Pull-up
4.9
−
−
−
−
0.95
−
V
V
VDD = 0 V, CIN = 1 V,
VFO Circuit: 10 kW to 5 V Pull-up
t
Fault-Output Pulse Width
CFOD = 22 nF
If = 0.1 A
1.6
2.4
ms
FOD
BOOTSTRAP SECTION
VF
Bootstrap Diode Forward
Voltage
3.4
30
4.6
38
5.8
46
V
RBOOT
Built-in Limiting Resistance
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T = T = 25_C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. The fault-out pulse width t
depends on the capacitance value of CFOD according to the following approximate equation:
FOD
6
t
= 0.1 × 10 × CFOD (s).
FOD
9. Values based on design and/or characterization.
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7
NFAM3065L4B
Temperature of LVIC versus VTS Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
LVIC Temperature (°C)
Figure 4. Temperature of LVIC versus VTS Characteristics
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DIP39, 54.5x31.0 EP−2
CASE MODGX
ISSUE O
DATE 02 APR 2019
GENERIC
MARKING DIAGRAM*
XXXXXXXXXXXXXXXXX
ZZZATYWW
XXXXX = Specific Device Code
ZZZ
AT
Y
= Assembly Lot Code
= Assembly & Test Location
= Year
WW = Work Week
*This information is generic. Please refer to device data
sheet for actual part marking. Pb−Free indicator, “G” or
microdot “G”, may or may not be present. Some products
may not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON05290H
DIP39, 54.5x31.0 EP−2
PAGE 1 OF 1
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