NFAM3065L4BL [ONSEMI]
Intelligent Power Module, SPM31, 650 V, 30A (Low speed version);
| 型号： | NFAM3065L4BL |
| 厂家： | 
ONSEMI |
| 描述： | Intelligent Power Module, SPM31, 650 V, 30A (Low speed version) |
| 文件： | 总11页 (文件大小：405K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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Intelligent Power Module (IPM)
650 V, 30 A
Advance Information
NFAM3065L4BL
General Description
The NFAM3065L4BL is a fully-integrated inverter power module
consisting of an independent High side gate driver, LVIC, six IGBT’s
and a temperature sensor (VTS), suitable for driving permanent
magnet synchronous (PMSM) motors, brushless DC (BLDC) motors
and AC asynchronous motors. The IGBT’s are configured in
a three-phase bridge with separate emitter connections for the lower
legs for maximum flexibility in the choice of control algorithm.
The power stage has under voltage lockout protection (UVP).
Internal boost diodes are provided for high side gate boost drive.
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Features
• Three-phase 650 V, 30 A IGBT Module with Independent Drivers
• Active Logic Interface
• Built-in Undervoltage Protection (UVP)
• Integrated Bootstrap Diodes and Resistors
• Separate Low-side IGBT Emitter Connections for Individual
Current Sensing of Each Phase
DIP39 54.5 x 31.0
CASE MODGX
MARKING DIAGRAM
• Temperature Sensor (VTS)
• UL1557 Certified (File No.339285)
• This Device is Pb-Free and RoHS Compliant
NFAM3065L4BL
ZZZATYWW
Typical Applications
• Industrial Drives
• Industrial Pumps
• Industrial Fans
Device marking is on package top side
NFAM3065L4BL = Specific Device Code
• Industrial Automation
ZZZ
A
T
Y
WW
= Assembly Lot Code
= Assembly Location
= Test Location
= Year
P
U
V
W
VS(U)
VB(U)
High Side
HVI C1
= Work Week
HS1
HS2
HS3
VDD(UH)
HIN(U)
VS(V)
VB(V)
High Side
HVI C2
ORDERING INFORMATION
HS1
LS1
HS2
LS2
HS3
LS3
VDD(VH)
HIN(V)
VS(W)
VB(W)
Device
Package
Shipping
90 / Box
High Side
HVI C3
VDD(WH)
HIN(W)
NFAM3065L4BL
DIP39
54.5 x 31.0
(Pb-Free)
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
CFOD
CIN
VSS
LS1
LS2
LS3
Low Side
LVIC
with
Protection
VDD(L)
NU
NV
NW
Figure 1. Application Schematic
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2021
1
Publication Order Number:
February, 2021 − Rev. P1
NFAM3065L4BL/D
NFAM3065L4BL
APPLICATION SCHEMATIC
VB(U) (3)
VS(U) (1)
N.C (38)
P (37)
CS
+
C1
VB
HIN(U) (6)
HIN
HOUT
HVIC1
HVIC2
HVIC3
VDD(UH) (4)
VDD
VSS
U (36)
V (35)
W (34)
VS
VB(V) (9)
VS(V) (7)
VB
HOUT
HIN(V) (12)
HIN
VDD(VH) (10)
VDD
VSS
Motor
VS
VB(W) (15)
VS(W) (13)
M C U
VB
HIN(W) (18)
HIN
HOUT
VDD(WH) (16)
VDD
VSS
VS
VTS (20)
VTS
OUT(U)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
LIN(U)
LIN(V)
LIN(W)
NU (33)
NV (32)
NW (31)
5 V line
LVIC
OUT(V)
VFO (24)
CFOD (25)
CIN (26)
VFO
CFOD
CIN
15 V line
VDD(L) (28)
VDD
OUT(W)
VSS (27)
VSS
Signal for over current trip
Phase current
Figure 2. Application Schematic − Adjustable Option
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2
NFAM3065L4BL
BLOCK DIAGRAM
N.C (38)
P (37)
VS(U) (1)
VB(U) (3)
VB
VDD(UH) (4)
HIN(U) (6)
HOUT
VDD
HVIC1
HIN
VS
VSS
U (36)
V (35)
W (34)
VS(V) (7)
VB(V)(9)
VB
VDD(VH) (10)
HIN(V) (12)
HOUT
VDD
HVIC2
HIN
VS
VSS
VS(W) (13)
VB(W) (15)
VB
VDD(WH) (16)
HIN(W) (18)
HOUT
VDD
HVIC3
HIN
VS
VSS
OUT(U)
VTS
VTS (20)
LIN(U) (21)
LIN(V) (22)
LIN(W) (23)
VFO (24)
LIN(U)
LIN(V)
LIN(W)
NU (33)
NV (32)
NW (31)
LVIC
OUT(V)
VFO
CFOD
CIN
CFOD (25)
CIN (26)
VSS
VDD
VSS (27)
OUT(W)
VDD(L) (28)
Figure 3. Equivalent Block Diagram
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3
NFAM3065L4BL
PIN FUNCTION DESCRIPTION
Pin
1
Name
VS(U)
−
Description
High−Side Bias Voltage GND for U phase IGBT Driving
Dummy
(2)
3
VB(U)
VDD(UH)
−
High−Side Bias Voltage for U phase IGBT Driving
High−Side Bias Voltage for U phase IC
Dummy
4
(5)
6
HIN(U)
VS(V)
−
Signal Input for High−Side U Phase
High−Side Bias Voltage GND for V phase IGBT Driving
Dummy
7
(8)
9
VB(V)
VDD(VH)
−
High−Side Bias Voltage for V phase IGBT Driving
High−Side Bias Voltage for V phase IC
Dummy
10
(11)
12
13
(14)
15
16
(17)
18
(19)
20
21
22
23
24
25
26
27
28
(29)
(30)
31
32
33
34
35
36
37
38
(39)
HIN(V)
VS(W)
−
Signal Input for High−Side V Phase
High−Side Bias Voltage GND for W phase IGBT Driving
Dummy
VB(W)
VDD(WH)
−
High−Side Bias Voltage for W phase IGBT Driving
High−Side Bias Voltage for W phase IC
Dummy
HIN(W)
−
Signal Input for High−Side W Phase
Dummy
VTS
LIN(U)
LIN(V)
LIN(W)
VFO
CFOD
CIN
Voltage Output for LVIC Temperature Sensing Unit
Signal Input for Low−Side U Phase
Signal Input for Low−Side V Phase
Signal Input for Low−Side W Phase
Fault Output
Capacitor for Fault Output Duration Selection
Input for Current Protection
Low−Side Common Supply Ground
Low−Side Bias Voltage for IC and IGBTs Driving
Dummy
VSS
VDD(L)
−
−
Dummy
NW
Negative DC−Link Input for U Phase
Negative DC−Link Input for V Phase
Negative DC−Link Input for W Phase
Output for U Phase
NV
NU
W
V
Output for V Phase
U
Output for W Phase
P
Positive DC−Link Input
N.C
No Connection
−
Dummy
1. Pins of () are the dummy for internal connection. These pins should be no connection.
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4
NFAM3065L4BL
ABSOLUTE MAXIMUM RATINGS (T = 25°C) (Note 2)
C
Symbol
VPN
Rating
Supply Voltage
Supply Voltage (Surge)
Conditions
Value
450
Unit
V
P−NU, NV, NW
VPN(surge)
VPN(PROT)
P−NU, NV, NW (Note 3)
550
V
Self Protection Supply Voltage Limit
(Short-Circuit Protection Capability)
VDD = VBS = 13.5 V ~ 16.5 V,
Tj = 150°C, VCES < 650 V,
Non-Repetitive, < 2 ms
400
V
Vces
VRRM
Ic
Collector−emitter voltage
650
650
V
V
A
A
V
V
Maximum Repetitive Revers Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Control Supply Voltage
30
Icp
Under 1 ms Pulse Width
60
VDD
VBS
VDD(UH,VH,WH), VDD(L)−VSS
−0.3 to 20
−0.3 to 20
High−Side Control Bias Voltage
VB(U)−VS(U), VB(V)−VS(V),
VB(W)−VS(W)
VIN
Input Signal Voltage
HIN(U), HIN(V), HIN(W), LIN(U), LIN(V),
LIN(W)–VSS
−0.3 to VDD
V
VFO
IFO
VCIN
Pc
Fault Output Supply Voltage
Fault Output Current
VFO–VSS
−0.3 to VDD
2
V
mA
V
Sink Current at VFO pin
CIN–VSS
Current Sensing Input Voltage
Corrector Dissipation
−0.3 to VDD
113
Per One Chip
W
Tj
Operating Junction Temperature
Storage temperature
−40 to +150
−40 to +125
−40 to +125
2500
°C
Tstg
Tc
°C
Module Case Operation Temperature
Isolation voltage
°C
Viso
60 Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat Sink Plate
V rms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
3. This surge voltage developed by the switching operation due to the wiring inductance between P and NU, NV, NW terminal.
THERMAL CHARACTERISTICS
Symbol
Rating
Conditions
Min
−
Typ
−
Max
1.1
Unit
°C/W
°C/W
R
Junction-to-Case Thermal
Resistance
Inverter IGBT Part (per 1/6 module)
Inverter FWD Part (per 1/6 module)
th(j-c)Q
R
−
−
2.2
th(j-c)F
4. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe
Operating parameters.
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5
NFAM3065L4BL
RECOMMENDED OPERATING CONDITIONS
Symbol
VPN
Rating
Supply Voltage
Conditions
Min
−
Typ
300
15
Max
400
Unit
V
P−NU, NV, NW
VDD
Gate Driver Supply
Voltages
VDD(UH,VH,WH), VDD(L)−VSS
13.5
13.0
16.5
18.5
V
VBS
VB(U)−VS(U), VB(V)−VS(V),
15
V
VB(W)−VS(W)
dVDD / dt,
dVBS / dt
Supply Voltage Variation
−1
−
1
V/ms
f
PWM Frequency
Dead Time
1
1.5
−
−
−
−
20
−
kHz
ms
PWM
DT
Turn-off to Turn-on (external)
Io
Allowable r.m.s. Current
VPN = 300 V,
VDD = 15 V,
P.F. = 0.8
f
= 5 kHz
21.2
A rms
PWM
Tc ≤ 125°C,
Tj ≤ 150°C
(Note 5)
f
= 15 kHz
−
−
17.2
PWM
PWIN (on)
PWIN (off)
Allowable Input Pulse
Width
200 V ≤ VPN ≤ 400 V
13.5 V ≤ VDD ≤ 16.5 V
13.0 V ≤ VBS ≤ 18.5 V
−20°C ≤ Tc ≤ 100°C
1.0
1.5
0.6
−
−
−
−
ms
Package Mounting Torque
M3 type screw
0.7
0.9
Nm
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
5. Allowable r.m.s current depends on the actual conditions.
6. Flatness tolerance of the heatsink should be within −50 mm to +100 mm.
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
INVERTER SECTION
Ices
Collector−Emitter Leakage
Current
Vce = Vces , Tj = 25°C
−
−
−
−
−
1
mA
mA
V
Vce = Vces, Tj = 150°C
10
VCE(sat)
Collector−Emitter Saturation
Voltage
VDD = VBS = 15 V, IN = 5 V
Ic = 30 A, Tj = 25°C
1.60
2.30
VDD = VBS = 15 V, IN = 5 V
−
1.80
−
V
Ic = 30 A, Tj = 150°C
VF
FWDi Forward Voltage
IN = 0 V, If = 30 A, Tj = 25°C
IN = 0 V, If = 30 A, Tj = 150°C
−
−
2.00
2.00
1.60
0.50
1.60
0.25
0.15
1.70
0.50
1.60
0.25
0.15
2.40
−
V
V
ton
tc(on)
toff
High side
Switching
Times
VPN = 300 V, VDD(H) = VDD(L) = 15 V
Ic = 30 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
1.00
−
2.20
1.00
2.20
0.75
−
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
−
tc(off)
trr
−
−
ton
Low side
Switching
Times
VPN = 300 V, VDD(H) = VDD(L) = 15 V
Ic = 30 A, Tj = 25°C, IN = 0 ⇔ 5 V
Inductive Load
1.10
−
2.30
1.00
2.20
0.75
−
tc(on)
toff
−
tc(off)
trr
−
−
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6
NFAM3065L4BL
ELECTRICAL CHARACTERISTICS (Tc = 25°C, VDD = 15 V, VBS = 15 V, unless otherwise specified.) (Note 7) (continued)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DRIVER SECTION
IQDDH
Quiescent VDD Supply Current VDD(UH,VH,WH) = 15 V,
HIN(U,V,W) = 0 V
VDD(UH)−VSS
VDD(VH)−VSS
VDD(WH)−VSS
−
−
0.30
mA
IQDDL
IPDDH
VDD(L) = 15 V,
LIN(U,V,W) = 0 V
VDD(L)–VSS
−
−
−
−
3.50
0.40
mA
mA
Operating VDD Supply Current VDD(UH,VH,WH) = 15 V,
VDD(UH)−VSS
VDD(VH)−VSS
f
= 20 kHz,
PWM
Duty = 50%, Applied to one VDD(WH)−VSS
PWM Signal Input for
High−Side
IPDDL
VDD(L) = 15 V,
= 20 kHz,
VDD(L)−VSS
−
−
6.00
mA
f
PWM
Duty = 50%, Applied to one
PWM Signal Input for
Low−Side
IQBS
IPBS
Quiescent VBS Supply Current VBS = 15 V,
VB(U)−VS(U)
VB(V)−VS(V)
VB(W)−VS(W)
−
−
−
−
0.30
5.00
mA
mA
HIN(U,V,W) = 0 V
Operating VBS Supply Current VDD = VBS = 15 V,
VB(U)−VS(U)
VB(V)−VS(V)
f
= 20 kHz,
PWM
Duty = 50%, Applied to one VB(W)−VS(W)
PWM Signal Input for
High−Side
VIN(ON)
VIN(OFF)
VCIN(ref)
UVDDD
UVDDR
UVBSD
UVBSR
VTS
ON Threshold voltage
OFF Threshold voltage
Short Circuit Trip Level
HIN(U,V,W)−VSS, LIN(U,V,W)−VSS
−
−
2.6
−
V
V
V
V
V
V
V
V
0.8
−
0.48
−
VDD = 15 V, CIN−VSS
Detection Level
0.46
10.3
10.8
10.0
10.5
0.905
0.50
12.5
13.0
12.0
12.5
1.155
Supply Circuit
Under-Voltage Protection
Reset Level
−
Detection Level
−
Reset Level
−
Voltage Output for LVIC
Temperature Sensing Unit
VTS−VSS = 10 nF, Temp. = 25°C
1.030
VFOH
VFOL
Fault Output Voltage
VDD = 0 V, CIN = 0 V,
VFO Circuit: 10 kW to 5 V Pull-up
4.9
−
−
−
−
0.95
−
V
V
VDD = 0 V, CIN = 1 V,
VFO Circuit: 10 kW to 5 V Pull-up
t
Fault-Output Pulse Width
CFOD = 22 nF
If = 0.1 A
1.6
2.4
ms
FOD
BOOTSTRAP SECTION
VF
Bootstrap Diode Forward
Voltage
3.4
30
4.6
38
5.8
46
V
RBOOT
Built-in Limiting Resistance
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T = T = 25_C. Low
J
A
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. The fault-out pulse width t
depends on the capacitance value of CFOD according to the following approximate equation:
FOD
6
t
= 0.1 × 10 × CFOD (s).
FOD
9. Values based on design and/or characterization.
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7
NFAM3065L4BL
Temperature of LVIC versus VTS Characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
40 45 50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
LVIC Temperature (°C)
Figure 4. Temperature of LVIC versus VTS Characteristics
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8
NFAM3065L4BL
PACKAGE DIMENSIONS
DIP39, 54.5x31.0 EP−2
CASE MODGX
ISSUE O
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9
NFAM3065L4BL
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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