NCP145AMX100TCG [ONSEMI]
Very Low Dropout Bias Rail CMOS Voltage Regulator;
| 型号： | NCP145AMX100TCG |
| 厂家： | 
ONSEMI |
| 描述： | Very Low Dropout Bias Rail CMOS Voltage Regulator 开关 光电二极管 |
| 文件： | 总10页 (文件大小：279K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NCP145
500 mA, Very Low Dropout
Bias Rail CMOS Voltage
Regulator
The NCP145 is a 500 mA VLDO equipped with NMOS pass
transistor and a separate bias supply voltage (V ). The device
BIAS
www.onsemi.com
T
provides very stable, accurate output voltage with low noise suitable
for space constrained, noise sensitive applications. In order to
optimize performance for battery operated portable applications, the
MARKING
DIAGRAM
NCP145 features low I consumption. The XDFN4 1.2 mm x 1.2 mm
Q
1
package is optimized for use in space constrained applications.
XXM
XDFN4
CASE 711BC
Features
1
• Input Voltage Range: 1.0 V to 5.5 V
• Bias Voltage Range: 2.4 V to 5.5 V
• Fixed Voltage Versions Available
• Output Voltage Range: 1.0 V to 1.8 V (Fixed)
XX = Specific Device Code
M
= Date Code
•
1.5% Accuracy over Temperature, 0.5% V
@ 25°C
OUT
PIN CONNECTIONS
• Ultra−Low Dropout: Typ. 140 mV at 500 mA
• Very Low Bias Input Current of Typ. 80 mA
IN
4
3
EN
• Very Low Bias Input Current in Disable Mode: Typ. 0.5 mA
• Logic Level Enable Input for ON/OFF Control
• Output Active Discharge Option Available
GND
5
• Stable with a 2.2 mF Ceramic Capacitor
OUT
BIAS
1
2
• Available in XDFN4 − 1.2 mm x 1.2 mm x 0.4 mm Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
(Top View)
Typical Applications
• Battery−powered Equipment
• Smartphones, Tablets
• Cameras, DVRs, STB and Camcorders
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 9 of this data sheet.
V
BIAS
>2.7 V
NCP145
GND
100 nF
BIAS
IN
V
OUT
OUT
1 V up to 500 mA
V
1.5 V
IN
2.2 mF
1 mF
EN
V
EN
Figure 1. Typical Application Schematics
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
March, 2018 − Rev. 1
NCP145/D
NCP145
CURRENT
LIMIT
OUT
IN
ENABLE
BLOCK
EN
BIAS
UVLO
150 W
VOLTAGE
REFERENCE
+
THERMAL
LIMIT
−
*Active
DISCHARGE
GND
*Active output discharge function is present only in NCP145AMXyyyTCG devices.
yyy denotes the particular output voltage option.
Figure 2. Simplified Schematic Block Diagram
www.onsemi.com
2
NCP145
PIN FUNCTION DESCRIPTION
Pin No.
XDFN4
Pin Name
Description
1
2
OUT
Regulated Output Voltage pin
BIAS
Bias voltage supply for internal control circuits. This pin is monitored by internal Under-Voltage
Lockout Circuit.
3
EN
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into
shutdown mode.
4
5
IN
Input Voltage Supply pin
Ground
GND
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
V
Input Voltage (Note 1)
V
IN
−0.3 to 6
Output Voltage
V
OUT
−0.3 to (V +0.3) ≤ 6
V
IN
Chip Enable, Bias Input
V
V
−0.3 to 6
unlimited
150
V
EN, BIAS
Output Short Circuit Duration
Maximum Junction Temperature
Storage Temperature
t
s
SC
T
J
°C
°C
V
T
−55 to 150
2000
STG
ESD Capability, Human Body Model (Note 2)
ESD Capability, Machine Model (Note 2)
ESD
HBM
ESD
200
V
MM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection (except OUT pin) and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, XDFN4 1.2 mm x 1.2 mm
RqJA
170
°C/W
Thermal Resistance, Junction−to−Air (Note 3)
3. This data was derived by thermal simulations for a single device mounted on the 40 mm x 40 mm x 1.6 mm FR4 PCB with 2−ounce 800 sq
mm copper area on top and bottom.
www.onsemi.com
3
NCP145
ELECTRICAL CHARACTERISTICS −40°C ≤ T ≤ 85°C; V
= 2.7 V or (V
OUT J
+ 1.6 V), whichever is greater, V = V
+
J
BIAS
OUT
IN
OUT(NOM)
0.3 V, I
= 1 mA, V = 1 V, unless otherwise noted. C = 1 mF, C
= 2.2 mF. Typical values are at T = +25°C. Min/Max values are
OUT
EN
IN
for −40°C ≤ T ≤ 85°C unless otherwise noted. (Note 4)
J
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
Range
V
IN
V
+
5.5
V
OUT
DO
V
Operating Bias Voltage
Range
V
(V
+
5.5
V
V
BIAS
OUT
1.40) ≥ 2.4
Undervoltage Lock−out
V
Rising
UVLO
1.6
0.2
BIAS
Hysteresis
Output Voltage Accuracy
Output Voltage Accuracy
V
V
0.5
%
%
OUT
−40°C ≤ T ≤ 85°C, V
OUT(NOM)
+ 0.3 V ≤ V ≤
IN
−1.5
+1.5
J
OUT(NOM)
OUT
V
+ 1.0 V, 2.7 V or (V
+
OUT(NOM)
1.6 V), whichever is greater < V
< 5.5 V,
BIAS
1 mA < I
< 500 mA
OUT
V
V
Line Regulation
V
+ 0.3 V ≤ V ≤ 5.0 V
Line
Line
0.01
0.01
%/V
%/V
IN
OUT(NOM)
IN
Reg
Line Regulation
2.7 V or (V
greater < V
+ 1.6 V), whichever is
OUT(NOM)
BIAS
Reg
< 5.5 V
BIAS
Load Regulation
I
I
I
I
= 1 mA to 500 mA
= 150 mA (Note 5)
= 500 mA (Note 5)
Load
1.5
37
mV
mV
OUT
OUT
OUT
OUT
Reg
V
IN
Dropout Voltage
V
V
V
75
250
1.5
1000
110
1
DO
140
1.1
800
80
DO
DO
CL
V
BIAS
Dropout Voltage
= 500 mA, V = V (Note 5)
BIAS
V
mA
mA
mA
mA
V
IN
OUT(NOM)
Output Current Limit
V
V
V
V
= 90% V
= 2.7 V
I
550
0.9
OUT
BIAS
Bias Pin Operating Current
Bias Pin Disable Current
Vinput Pin Disable Current
EN Pin Threshold Voltage
I
BIAS
BIAS(DIS)
≤ 0.4 V
≤ 0.4 V
I
0.5
0.5
EN
EN
I
1
VIN(DIS)
EN Input Voltage “H”
EN Input Voltage “L”
V
EN(H)
V
EN(L)
0.4
1
EN Pull Down Current
V
= 5.5 V
I
0.3
mA
ms
EN
EN
ON
Turn−On Time
From assertion of V to V
98% V
=
t
215
EN
OUT
. V
= 1.2 V
= 1.2 V,
OUT(NOM)
OUT(NOM) OUT(NOM)
Turn−On Slew Rate
V
V
0 V to 1.0 V, V
SR
PSRR(V
15
70
80
40
mV/ms
dB
EN
from 10 mV to 610 mV
OUT
Power Supply Rejection
Ratio
V
to V
, f = 1 kHz, I
= 150 mA,
)
IN
IN
OUT
OUT
VIN ≥ V
+0.5 V
OUT
V
to V
OUT
, f = 1 kHz, I
= 150 mA,
= 1.0 V,
PSRR(V )
BIAS
dB
BIAS
VIN ≥ V
OUT
OUT
+0.5 V
Output Noise Voltage
V
= V
+0.5 V, V
V
N
mV
RMS
IN
OUT
OUT(NOM)
f = 10 Hz to 100 kHz
Thermal Shutdown
Threshold
Temperature increasing
Temperature decreasing
160
140
150
°C
Output Discharge
Pull−Down
V
EN
≤ 0.4 V, V
= 0.5 V, NCP145A options
R
DISCH
W
OUT
only
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at T = 25°C.
A
Low duty cycle pulse techniques are used during the testing to maintain the junction temperature as close to ambient as possible.
5. Dropout voltage is characterized when V
falls 3% below V
.
OUT
OUT(NOM)
www.onsemi.com
4
NCP145
TYPICAL CHARACTERISTICS
At T = +25°C, V = V
+ 0.3 V, V
= 2.7 V, V = V
, V
= 1.0 V, I
= 500 mA,
J
C
IN
OUT(TYP)
BIAS
EN
BIAS
OUT(NOM)
OUT
= 1 mF, C
= 0.1 mF, and C = 2.2 mF (effective capacitance), unless otherwise noted.
IN
BIAS
OUT
200
180
160
140
120
100
80
200
180
I
= 100 mA
OUT
160
+125°C
+85°C
140
120
100
80
−40°C
+125°C
60
+85°C
60
+25°C
−40°C
40
+25°C
40
20
0
20
0
0
100
200
300
400
500
0.5 1.0
1.5
2.0
2.5
− V
3.0
3.5
4.0 4.5
I
, OUTPUT CURRENT (mA)
V
BIAS
(V)
OUT
OUT
Figure 3. VIN Dropout Voltage vs. IOUT and
Temperature TJ
Figure 4. VIN Dropout Voltage vs. (VBIAS
−
V
OUT) and Temperature TJ
300
250
200
150
100
500
450
I
= 300 mA
OUT
I
= 500 mA
OUT
400
350
300
250
200
150
100
+125°C
+125°C
+85°C
+85°C
+25°C
+25°C
−40°C
−40°C
50
0
50
0
0.5 1.0
1.5
2.0
2.5
− V
3.0
3.5
4.0
4.5
0.5 1.0
1.5
2.0
2.5
3.0
(V)
3.5
4.0 4.5
V
BIAS
(V)
V
− V
OUT
BIAS OUT
Figure 5. VIN Dropout Voltage vs. (VBIAS
−
Figure 6. VIN Dropout Voltage vs. (VBIAS −
V
OUT) and Temperature TJ
V
OUT) and Temperature TJ
140
1500
1400
1300
1200
1100
120
100
80
+125°C
+85°C
+125°C
−40°C
60
+25°C
+25°C
−40°C
40
+85°C
1000
900
20
0
0
50 100 150 200 250 300 350 400 450 500
, OUTPUT CURRENT (mA)
0
50
100
150
200
250
300
I
I
, OUTPUT CURRENT (mA)
OUT
OUT
Figure 8. BIAS Pin Current vs. IOUT and
Temperature TJ
Figure 7. VBIAS Dropout Voltage vs. IOUT and
Temperature TJ
www.onsemi.com
5
NCP145
TYPICAL CHARACTERISTICS
At T = +25°C, V = V
+ 0.3 V, V
= 2.7 V, V = V
, V
= 1.0 V, I
= 500 mA,
J
C
IN
OUT(TYP)
BIAS
EN
BIAS
OUT(NOM)
OUT
= 1 mF, C
= 0.1 mF, and C = 2.2 mF (effective capacitance), unless otherwise noted.
IN
BIAS
OUT
1000
900
800
700
600
500
400
300
200
200
180
+125°C
160
140
120
100
80
+85°C
+25°C
+125°C
−40°C
+85°C
60
+25°C
40
−40°C
100
0
20
0
2.0
2.5
3.0
3.5
4.0
(V)
4.5
5.0
5.5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
− V (V)
V
BIAS
V
BIAS
OUT
Figure 9. BIAS Pin Current vs. VBIAS and
Temperature TJ
Figure 10. Current Limit vs. (VBIAS − VOUT)
www.onsemi.com
6
NCP145
TYPICAL CHARACTERISTICS
At T = +25°C, V = V
+ 0.3 V, V
= 2.7 V, V = V
, V
OUT(NOM)
= 1.0 V, I
= 500 mA,
J
IN
OUT(TYP)
BIAS
EN
BIAS
OUT
C
= 1 mF, C
= 0.1 mF, and C
= 2.2 mF (effective capacitance), unless otherwise noted.
IN
BIAS
OUT
V
OUT
V
OUT
t
R
= t = 1 ms
F
t = t = 1 ms
R F
I
I
OUT
OUT
50 ms/div
50 ms/div
Figure 11. Load Transient Response,
OUT = 50 mA to 500 mA, COUT = 10 mF
Figure 12. Load Transient Response,
IOUT = 50 mA to 500 mA, COUT = 2.2 mF
I
V
OUT
V
OUT
t
R
= t = 1 ms
F
t
R
= t = 1 ms
F
I
OUT
I
OUT
500 ms/div
500 ms/div
Figure 13. Load Transient Response,
OUT = 1 mA to 500 mA, COUT = 10 mF
Figure 14. Load Transient Response,
IOUT = 1 mA to 500 mA, COUT = 2.2 mF
I
V
OUT
V
OUT
t
R
= t = 5 ms
F
t
R
= t = 5 ms
F
V
IN
V
IN
20 ms/div
20 ms/div
Figure 15. VIN Line Transient Response,
IN = 1.3 V to 2.3 V, IOUT = 100 mA, COUT = 10 mF
Figure 16. VIN Line Transient Response,
VIN = 1.3 V to 2.3 V, IOUT = 100 mA, COUT = 2.2 mF
V
www.onsemi.com
7
NCP145
APPLICATIONS INFORMATION
NCP145
VBAT
EN
Switch−mode DC/DC
= 1.5 V
1.0 V
V
OUT
BIAS
OUT
1.5 V
LX
FB
IN
IN
LOAD
GND
EN
Processor
GND
I/O
I/O
To other circuits
Figure 17. Typical Application: Low−Voltage DC/DC Post−Regulator with ON/OFF Functionality
The NCP145 dual−rail very low dropout voltage regulator
is using NMOS pass transistor for output voltage regulation
or greater. Ceramic capacitors are recommended. For the
best performance all the capacitors should be connected to
the NCP145 respective pins directly in the device PCB
copper layer, not through vias having not negligible
impedance.
When using small ceramic capacitor, their capacitance is
not constant but varies with applied DC biasing voltage,
temperature and tolerance. The effective capacitance can be
much lower than their nominal capacitance value, most
importantly in negative temperatures and higher LDO
output voltages. That is why the recommended Output
capacitor capacitance value is specified as Effective value in
the specific application conditions.
from V voltage. All the low current internal control
IN
circuitry is powered from the V
voltage.
BIAS
The use of an NMOS pass transistor offers several
advantages in applications. Unlike PMOS topology devices,
the output capacitor has reduced impact on loop stability.
Vin to Vout operating voltage difference can be very low
compared with standard PMOS regulators in very low Vin
applications.
The NCP145 offers smooth monotonic start-up. The
controlled voltage rising limits the inrush current.
The Enable (EN) input is equipped with internal
hysteresis. NCP145 Voltage linear regulator Fixed version
is available.
Enable Operation
The enable pin will turn the regulator on or off. The
threshold limits are covered in the electrical characteristics
table in this data sheet. If the enable function is not to be used
Dropout Voltage
Because of two power supply inputs V and V
and
IN
BIAS
then the pin should be connected to V or V
.
one V
regulator output, there are two Dropout voltages
IN
BIAS
OUT
specified.
The first, the V Dropout voltage is the voltage
Current Limitation
IN
The internal Current Limitation circuitry allows the
device to supply the full nominal current and surges but
protects the device against Current Overload or Short.
difference (V – V
) when V
OUT
starts to decrease by
IN
OUT
percent specified in the Electrical Characteristics table.
is high enough; specific value is published in the
V
BIAS
Electrical Characteristics table.
The second, V dropout voltage is the voltage
Thermal Protection
BIAS
Internal thermal shutdown (TSD) circuitry is provided to
protect the integrated circuit in the event that the maximum
junction temperature is exceeded. When TSD activated , the
regulator output turns off. When cooling down under the low
temperature threshold, device output is activated again. This
TSD feature is provided to prevent failures from accidental
overheating.
Activation of the thermal protection circuit indicates
excessive power dissipation or inadequate heatsinking. For
reliable operation, junction temperature should be limited to
+125°C maximum.
difference (V
– V
) when V and V
pins are
BIAS
OUT
IN
BIAS
joined together and V
starts to decrease.
OUT
Input and Output Capacitors
The device is designed to be stable for ceramic output
capacitors with Effective capacitance in the range from
2.2 mF to 10 mF. The device is also stable with multiple
capacitors in parallel, having the total effective capacitance
in the specified range.
In applications where no low input supplies impedance
available (PCB inductance in V and/or V
inputs as
IN
BIAS
example), the recommended C = 1 mF and C
= 0.1 mF
IN
BIAS
www.onsemi.com
8
NCP145
ORDERING INFORMATION
Device
Nominal Output Voltage Marking
Option
Package
Shipping†
NCP145AMX100TCG
NCP145AMX105TCG
NCP145AMX120TCG
1.00 V
1.05 V
1.20 V
HE
HG
HD
Output Active
Discharge
XDFN4
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Spe-
cifications Brochure, BRD8011/D.
To order other package and voltage variants, please contact your ON Semiconductor sales representative
www.onsemi.com
9
NCP145
PACKAGE DIMENSIONS
XDFN4 1.2x1.2, 0.8P
CASE 711BC
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
A
B
E
D
DETAIL B
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.20 mm FROM THE TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
PIN ONE
REFERENCE
MILLIMETERS
DETAIL B
DIM MIN
0.35
A1 0.00
MAX
0.45
0.05
ALTERNATE
A
TOP VIEW
A3
CONSTRUCTION
A3
b
0.13 REF
SIDE VIEW
A
0.25
0.35
0.25
1.25
0.68
1.25
0.68
0.05
C
C
b1 0.15
1.15
D2 0.58
1.15
E2 0.58
4X
(0.12)
A1
D
0.05
4X (0.12)
E
SEATING
NOTE 4
C
PLANE
SIDE VIEW
D2
e
L
0.80 BSC
0.25
0.35
0.23
4X b
L1 0.13
M
0.05
C A B
e/2
4X
L
NOTE 3
RECOMMENDED
MOUNTING FOOTPRINT*
e
1
2
DETAIL A
E2
L1
4X
C 0.195
0.22
PACKAGE
OUTLINE
1.50
0.25
3
4
b1
BOTTOM VIEW
DETAIL A
4X
0.35
0.80 PITCH
1
2X
0.63
4X
0.48
455
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
NCP145/D
◊
相关型号：
©2020 ICPDF网 联系我们和版权申明