MUN2214 [ONSEMI]
NPN SILICON BIAS RESISTOR TRANSISTOR; NPN硅偏置电阻晶体管
| 型号： | MUN2214 |
| 厂家： | 
ONSEMI |
| 描述： | NPN SILICON BIAS RESISTOR TRANSISTOR |
| 文件： | 总12页 (文件大小：265K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by MUN2211T1/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
Motorola Preferred Devices
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC–59 package which is designed
for low power surface mount applications.
NPN SILICON
BIAS RESISTOR
TRANSISTOR
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
PIN3
COLLECTOR
(OUTPUT)
Reduces Component Count
The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
3
R1
R2
2
1
PIN2
BASE
(INPUT)
•
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
CASE 318D–03, STYLE 1
(SC–59)
PIN1
EMITTER
(GROUND)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector–Base Voltage
Symbol
Value
50
Unit
Vdc
V
CBO
CEO
Collector–Emitter Voltage
Collector Current
V
50
Vdc
I
C
100
mAdc
(1)
Total Power Dissipation @ T = 25°C
Derate above 25°C
P
D
*200
1.6
mW
mW/°C
A
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Ambient (surface mounted)
Operating and Storage Temperature Range
R
625
°C/W
°C
θJA
T , T
J
–65 to +150
stg
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
T
L
260
10
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
8A
8B
8C
8D
8E
8F
8G
8H
8J
10
22
47
10
10
10
22
47
47
∞
(2)
(2)
(2)
(2)
(2)
(2)
(2)
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
4.7
1.0
2.2
4.7
4.7
22
∞
1.0
2.2
4.7
47
47
8K
8L
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I = 0)
I
I
—
—
—
—
100
500
nAdc
nAdc
mAdc
E
CBO
Collector–Emitter Cutoff Current (V
= 50 V, I = 0)
B
CE
CEO
Emitter–Base Cutoff Current
MUN2211T1
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
EBO
(V
EB
= 6.0 V, I = 0)
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
C
Collector–Base Breakdown Voltage (I = 10 µA, I = 0)
V
V
50
50
—
—
—
—
Vdc
Vdc
C
E
(BR)CBO
(3)
Collector–Emitter Breakdown Voltage (I = 2.0 mA, I = 0)
C
B
(BR)CEO
(3)
ON CHARACTERISTICS
DC Current Gain
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
h
FE
35
60
80
60
100
140
140
350
350
5.0
15
—
—
—
—
—
—
—
—
—
—
—
(V
CE
= 10 V, I = 5.0 mA)
C
80
160
160
3.0
8.0
15
30
200
150
80
80
Collector–Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA)
V
CE(sat)
—
—
0.25
Vdc
C
B
(I = 10 mA, I = 5 mA) MUN2230T1/MUN2231T1
C
B
(I = 10 mA, I = 1 mA) MUN2215T1/MUN2216T1/
C
B
MUN2232T1/MUN2233T1/MUN2234T1
Output Voltage (on)
(V = 5.0 V, V = 2.5 V, R = 1.0 kΩ)
V
OL
Vdc
Vdc
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
CC
B
L
(V
CC
= 5.0 V, V = 3.5 V, R = 1.0 kΩ)
B L
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (Continued) (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (V
= 5.0 V, V = 0.5 V, R = 1.0 kΩ)
V
OH
4.9
—
—
Vdc
CC
B
L
(V
CC
(V
CC
= 5.0 V, V = 0.050 V, R = 1.0 kΩ) MUN2230T1
B
L
L
= 5.0 V, V = 0.25 V, R = 1.0 kΩ) MUN2215T1
B
MUN2216T1
MUN2233T1
Input Resistor
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
13
28.6
61.1
13
k Ω
13
6.1
1.3
2.9
6.1
6.1
28.6
15.4
Resistor Ratio
MUN2211T1/MUN2212T1/MUN2213T1
MUN2214T1
MUN2215T1/MUN2216T1
MUN2230T1/MUN2231T1/MUN2232T1
MUN2233T1
R1/R2
0.8
0.17
—
0.8
0.055
0.38
1.0
0.21
—
1.0
0.1
1.2
0.25
—
1.2
0.185
0.56
MUN2234T1
0.47
250
200
150
100
R
= 625°C/W
θ
JA
50
0
–50
0
50
100
C)
150
T , AMBIENT TEMPERATURE (
°
A
Figure 1. Derating Curve
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2211T1
1
1000
I
/I = 10
V
= 10 V
C B
CE
T
= –25°C
A
T
= 75
°C
A
25°C
25°C
0.1
75°C
–25
°
C
100
0.01
0.001
10
0
20
40
60
80
1
10
100
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 2. V
CE(sat)
versus I
Figure 3. DC Current Gain
C
4
3
100
10
25°C
75°C
f = 1 MHz
= 0 V
I
T
= –25°C
E
A
T
= 25°C
A
1
0.1
2
1
0
0.01
0.001
V
= 5 V
9
O
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
10
T
= –25°C
A
V
= 0.2 V
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 6. Input Voltage versus Output Current
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2212T1
1000
1
V
= 10 V
CE
I
/I = 10
C B
T
= –25
°
C
A
T
= 75°C
A
25
°C
25°C
75°C
0.1
–25°C
100
0.01
10
0.001
1
10
100
0
20
40
60
80
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 7. V
CE(sat)
versus I
Figure 8. DC Current Gain
C
4
3
2
1
0
100
10
1
75°C
25°C
f = 1 MHz
= 0 V
T
= –25°C
A
I
E
T
= 25°C
A
0.1
0.01
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
= 0.2 V
O
T
= –25°C
A
10
1
25°C
75°C
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2213T1
10
1
1000
T
A
= –25°C
I
/I = 10
C B
V
= 10 V
CE
T
= 75°C
A
25°C
75°C
25°C
–25°C
100
0.1
0.01
10
1
10
100
0
20
40
60
80
I
, COLLECTOR CURRENT (mA)
I
, COLLECTOR CURRENT (mA)
C
C
Figure 12. V
CE(sat)
versus I
Figure 13. DC Current Gain
C
1
100
10
1
25°C
75°C
f = 1 MHz
= 0 V
I
E
T
= –25°C
A
0.8
T
= 25°C
A
0.6
0.4
0.1
0.01
0.2
0
V
= 5 V
O
0.001
0
10
20
30
40
50
0
2
4
V , INPUT VOLTAGE (VOLTS)
in
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
R
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
= 0.2 V
O
T
= –25°C
A
25°C
10
1
75°C
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 16. Input Voltage versus Output Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2214T1
1
0.1
300
T
= –25°C
I
/I = 10
T = 75°C
A
A
C B
V
= 10
CE
250
200
150
25°C
25°C
–25°C
75°C
0.01
100
50
0
0.001
0
20
40
60
80
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I , COLLECTOR CURRENT (mA)
C
I
, COLLECTOR CURRENT (mA)
C
Figure 17. V
CE(sat)
versus I
Figure 18. DC Current Gain
C
4
3.5
3
100
10
1
75°C
f = 1 MHz
= 0 V
25°C
l
E
T
= 25°C
A
2.5
T
= –25°C
A
2
1.5
1
0.5
0
V
= 5 V
O
0
2
4
6
8
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
V
, REVERSE BIAS VOLTAGE (VOLTS)
V
, INPUT VOLTAGE (VOLTS)
R
in
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
T
= –25°C
A
V
= 0.2 V
O
25°C
75°C
1
0.1
0
10
20
30
40
50
I
, COLLECTOR CURRENT (mA)
C
Figure 21. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED
LOAD
FROM
µP OR
OTHER LOGIC
Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
IN
LOAD
Figure 23. Open Collector Inverter: Inverts the Input Signal
Figure 24. Inexpensive, Unregulated Current Source
8
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.098–0.118
2.5–3.0
0.094
2.4
0.039
1.0
0.031
0.8
inches
mm
SC–59 POWER DISSIPATION
The power dissipation of the SC–59 is a function of the pad
size. This can vary from the minimum pad size for soldering
to the pad size given for maximum power dissipation. Power
dissipation for a surface mount device is determined by
the equation for an ambient temperature T of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
A
150°C – 25°C
T
R
, the maximum rated junction temperature of the die,
, the thermal resistance from the device junction to
J(max)
θJA
P
=
= 200 milliwatts
D
625°C/W
ambient; and the operating temperature, T . Using the
values provided on the data sheet, P can be calculated as
D
follows:
A
The 625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. Another alternative would
be to use a ceramic substrate or an aluminum core board
such as Thermal Clad . Using a board material such as
Thermal Clad, a power dissipation of 400 milliwatts can be
achieved using the same footprint.
T
– T
A
J(max)
P
=
D
R
θJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•
•
•
The soldering temperature and time should not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
•
Mechanical stress or shock should not be applied during
cooling
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
9
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SC–59 package should be
the same as the pad size on the printed circuit board, i.e., a
1:1 registration.
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of control
settings that will give the desired heat pattern. The operator
must set temperatures for several heating zones, and a
figure for belt speed. Taken together, these control settings
make up a heating “profile” for that particular circuit board.
On machines controlled by a computer, the computer
remembers these profiles from one operating session to the
next. Figure 25 shows a typical heating profile for use when
soldering a surface mount device to a printed circuit board.
This profile will vary among soldering systems but it is a good
starting point. Factors that can affect the profile include the
type of soldering system in use, density and types of
components on the board, type of solder used, and the type
of board or substrate material being used. This profile shows
temperature versus time. The line on the graph shows the
actual temperature that might be experienced on the surface
of a test board at or near a central solder joint. The two
profiles are based on a high density and a low density board.
The Vitronics SMD310 convection/infrared reflow soldering
system was used to generate this profile. The type of solder
used was 62/36/2 Tin Lead Silver with a melting point
between 177–189°C. When this type of furnace is used for
solder reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
“RAMP”
STEP 2
VENT
“SOAK” ZONES 2 & 5
“RAMP”
STEP 3
HEATING
STEP 4
HEATING
ZONES 3 & 6 ZONES 4 & 7
“SOAK” “SPIKE”
STEP 5
HEATING
STEP 6
VENT COOLING
STEP 7
205
PEAK AT
SOLDER JOINT
° TO 219°C
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
170°C
200°C
160°C
150°C
150°C
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
140°C
100°C
MASS OF ASSEMBLY)
100°C
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
50°C
T
TIME (3 TO 7 MINUTES TOTAL)
MAX
Figure 25. Typical Solder Heating Profile
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
L
MILLIMETERS
INCHES
MIN MAX
3
DIM
A
B
C
D
G
H
J
K
L
MIN
2.70
1.30
1.00
0.35
1.70
0.013
0.10
0.20
1.25
2.50
MAX
S
B
3.10 0.1063 0.1220
1.70 0.0512 0.0669
1.30 0.0394 0.0511
0.50 0.0138 0.0196
2.10 0.0670 0.0826
0.100 0.0005 0.0040
0.26 0.0040 0.0102
0.60 0.0079 0.0236
1.65 0.0493 0.0649
3.00 0.0985 0.1181
2
1
D
G
S
J
C
STYLE 1:
PIN 1. EMITTER
K
2. BASE
3. COLLECTOR
H
CASE 318D–03
ISSUE E
SC–59
Motorola Small–Signal Transistors, FETs and Diodes Device Data
11
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MUN2211T1/D
◊
相关型号：
©2020 ICPDF网 联系我们和版权申明