MUN2215RT1 [LRC]
Bias Resistor Transistor; 偏置电阻晶体管
| 型号： | MUN2215RT1 |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Bias Resistor Transistor |
| 文件： | 总8页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
MUN2211RT1
MUN2212RT1
MUN2213RT1
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce both system cost and
board space. The device is housed in the SC–59 package which is designed for low
power surface mount applications.
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–59 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
NPN SILICON
BIAS RESISTOR
TRANSISTOR
Use the Device Number to order the 7 inch/3000 unit reel.
3
PIN3
Collector
PIN2
base
R1
(Output)
2
(Input)
R2
1
PIN2
Emitter
(Ground)
CASE 318–03 , STYLE 1
( SC – 59 )
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)
Rating
Symbol
VCBO
V CEO
IC
Value
Unit
Vdc
Collector-Base Voltage
50
50
Collector-Emitter Voltage
Vdc
Collector Current
Total Power Dissipation @ T A = 25°C (1)
100
200
1.6
mAdc
mW
P D
Derate above 25°C
mW/°C
THERMALCHARACTERISTICS
Rating
Symbol
R θ JA
Value
625
Unit
°C/W
°C
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes
Time in Solder Bath
T J , T stg
–65 to +150
260
°C
T L
10
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
8A
8B
R1 (K)
10
22
47
10
R2 (K)
MUN2211RT1
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1(2)
MUN2216RT1(2)
MUN2230RT1(2)
MUN2231RT1(2)
MUN2232RT1(2)
MUN2233RT1(2)
MUN2234RT1(2)
10
22
47
47
8C
8D
8E
8F
8G
8H
8J
8K
8L
10
4.7
1.0
2.2
4.7
4.7
22
1.0
2.2
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
P2–1/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB=50V, I E = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICBO
ICEO
I EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
-
nAdc
nAdc
mAdc
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN2211RT1
-
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
-
-
-
-
-
-
-
-
-
-
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
V(BR)CEO
50
50
Vdc
Vdc
(3)
Collector-Emitter Breakdown Voltage (IC=2.0mA, IB=0)
-
(3)
ON CHARACTERISTICS
DC Current Gain
MUN2211RT1
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
hFE
35
60
60
100
140
140
350
350
5.0
15
-
-
-
-
-
-
-
-
-
-
-
(VCE = 10 V, IC = 5.0 mA)
80
80
160
160
3.0
8.0
15
30
80
200
150
80
Collector-Emitter Saturation Voltage (IC=10mA, IE=0.3mA)
VCE(sat)
-
-
0.25
Vdc
(IC = 10 mA, IB = 5 mA)
(IC = 10 mA, IB = 1 mA)
MUN2230RT1 MUN2231RT1
MUN2215RT1 MUN2216RT1
MUN2232RT1 MUN2233RT1 MUN2234RT1
Output Voltage (on)
(VCC=5.0V,VB=2.5V, RL=1.0kΩ)
VOL
Vdc
MUN2211RT1
MUN2212RT1 MUN2214RT1 MUN2215RT1 MUN2216RT1
MUN2230RT1 MUN2231RT1 MUN2232RT1 MUN2233RT1
MUN2234RT1
-
-
-
-
0.2
0.2
(VCC =5.0V,VB=3.5V, RL= 1.0kΩ)
MUN2213RT1
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
P2–2/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage (off) (VCC= 5.0V, VB = 0.5 V, RL = 1.0kΩ)
VOH
4.9
—
—
Vdc
(VCC= 5.0V, VB = 0.050 V, RL =1.0kΩ)
(VCC= 5.0V, VB = 0.25 V, RL =1.0kΩ)
MUN2230RT1
MUN2215RT1
MUN2216RT1
MUN2233RT1
MUN2211RT1
MUN2212RT1
MUN2213RT1
MUN2214RT1
MUN2215RT1
MUN2216RT1
MUN2230RT1
MUN2231RT1
MUN2232RT1
MUN2233RT1
MUN2234RT1
Input Resistor
R 1
7.0
15.4
32.9
7.0
10
22
13
28.6
61.1
13
kΩ
47
10
7.0
10
13
3.3
4.7
1.0
2.2
4.7
4.7
22
6.1
0.7
1.3
1.5
2.9
3.3
6.1
3.3
6.1
15.4
0.8
28.6
1.2
Resistor Ratio MUN2211RT1 MUN2212RT1 MUN2213RT1
MUN2214RT1
R 1 /R 2
1.0
0.21
—
0.17
—
0.25
—
MUN2215RT1 MUN2216RT1
MUN2230RT1 MUN2231RT1 MUN2232RT1
MUN2233RT1
0.8
1.0
0.1
0.47
1.2
0.055
0.38
0.185
0.56
MUN2234RT1
P2–3/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2211RT1
1
250
200
150
100
50
I
C /I B =10
T
A = –25°C
25°C
75°C
0.1
0.01
0.001
R
θJA = 625°C/W
0
–50
0
50
10
150
0
20
40
60
80
AMBIENTTEMPERATURE(°C)
I C , COLLECTOR CURRENT (mA)
Figure 1. Derating Curve
Figure 2. V
versus I
CE(sat)
C
1000
100
10
4
3
2
1
0
f = 1 MHz
E = 0 V
V
CE = 10 V
l
T
A =75°C
25°C
–25°C
T
A = 25°C
1
10
100
0
10
20
30
40
50
V R , REVERSE BIAS VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 4. Output Capacitance
Figure 3. DC Current Gain
100
10
10
25°C
T
A = –25°C
V
O = 0.2 V
75°C
T
A = –25°C
25°C
75°C
1
1
0.1
0.01
V
O = 5 V
0.001
0.1
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
V in , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
I C , COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
P2–4/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2212RT1
10
1000
V
CE = 10 V
I
C /I B =10
T
A = –25°C
25°C
75°C
T
A =75°C
25°C
–25°C
1
100
0.1
0.01
10
0
20
40
60
80
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
Figure 7. V CE(sat) versus I C
4
3
2
1
0
100
75°C
25°C
f = 1 MHz
E = 0 V
A = 25°C
T
A = –25°C
l
10
1
T
0.1
0.01
V
O = 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V
O = 0.2 V
T
A = –25°C
75°C
10
25°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
P2–5/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2213RT1
1
1000
I
C /I B =10
T
A = –25°C
V
T
CE =10V
A =75°C
25°C
75°C
25°C
–25°C
0.1
100
0.01
10
0
10
20
30
40
1
10
100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
Figure 12. V CE(sat) versus I C
1
0.8
0.6
0.4
0.2
0
100
10
25°C
75°C
f = 1 MHz
E = 0 V
l
T
A = –25°C
T
A = 25°C
1
0.1
0.01
V
O = 5 V
0.001
0
10
20
30
40
50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
V
O = 0.2 V
T
A=–25°C
25°C
10
1
75°C
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
P2–6/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MUN2214RT1
1
300
T
A = –25°C
I
C /I B =10
T
A =75°C
25°C
V
CE= 10V
250
200
150
100
50
25°C
–25°C
75°C
0.1
0.01
0
0
10
20
30
40
1
2
4
6
8
10 15 20 40 50 60 70 80 90 100
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
Figure 17. V CE(sat) versus I C
100
4
3.5
3
75°C
f = 1 MHz
E = 0 V
A= 25°C
25°C
l
T
2.5
2
T
A = –25°C
10
1.5
1
V
O = 5 V
0.5
0
1
0
2
4
6
8
10 15
20 25 30 35 40 45 50
0
1
2
3
4
5
6
7
8
9
10
V R , REVERSE BIAS VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
10
T
A = –25°C
V
O = 0.2 V
25°C
75°C
1
0.1
0
10
20
30
40
50
I C , COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
P2–7/8
LESHAN RADIO COMPANY, LTD.
MUN2211RT1 SERIES
+12 V
ISOLATED
LOAD
FROM µP OR
OTHERLOGIC
Figure 22. Level Shifter:
Connects 12 or 24 Volt Circuits to Logic
+12 V
V
CC
OUT
I N
LOAD
Figure 24. Inexpensive, Unregulated
Current Source
Figure 23. Open Collector Inverter:
Inverts the Input Signal
P2–8/8
相关型号：
MUN2215T3
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN, BIP General Purpose Small Signal
ONSEMI
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