MUN2214T1G_技术文档

MUN2211T1 Series

Preferred Devices

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC-59 package which is designed for low power surface

mount applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 2

BASE

(INPUT)

•ꢀSimplifies Circuit Design

•ꢀReduces Board Space

R

1

2

•ꢀReduces Component Count

•ꢀMoisture Sensitivity Level: 1

PIN 1

EMITTER

(GROUND)

•ꢀESD Rating - Human Body Model: Class 1

- Machine Model: Class B

•ꢀThe SC-59 Package can be Soldered Using Wave or Reflow

•ꢀThe Modified Gull-Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

•ꢀPb-Free Packages are Available

3

SC-59

CASE 318D

STYLE 1

2

1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A

MARKING DIAGRAM

Rating

Collector‐Base Voltage

Collector‐Emitter Voltage

Collector Current

Symbol

Value

50

Unit

Vdc

V

CBO

V

CEO

50

Vdc

8xꢀMꢀG

G

I

C

100

mAdc

1

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

8x = Device Code (Refer to page 2)

= Date Code*

Total Device Dissipation

T = 25°C

Derate above 25°C

P

230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

mW

D

M

A

G = Pb-Free Package

(Note: Microdot may be in either location)

°C/W

°C

*Date Code orientation may vary depending

upon manufacturing location.

Thermal Resistance, Junction‐to‐Ambient

R

540 (Note 1)

370 (Note 2)

q

JA

Thermal Resistance, Junction‐to‐Lead

R

264 (Note 1)

287 (Note 2)

q

JL

ORDERING INFORMATION

See detailed ordering and shipping information in the table on

page 2 of this data sheet.

Junction and Storage Temperature

Range

T , T

J

-ā55 to +150

stg

DEVICE MARKING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-4 @ Minimum Pad.

See specific marking information in the Device Marking and

Resistor Values table on page 2 of this data sheet.

Preferred devices are recommended choices for future use

2. FR-4 @ 1.0 x 1.0 inch Pad.

and best overall value.

©ꢀ Semiconductor Components Industries, LLC, 2007

July, 2007 - Rev. 13

1

Publication Order Number:

MUN2211T1/D

MUN2211T1 Series

DEVICE MARKING AND RESISTOR VALUES

†

Device

MUN2211T1

Package

Marking

8A

R1 (K)

R2 (K)

10

Shipping

SC-59

10

3000/Tape & Reel

MUN2211T1G

SC-59

(Pb-Free)

8A

10

MUN2211T3

SC-59

8A

10

10,000/Tape & Reel

MUN2211T3G

SC-59

(Pb-Free)

MUN2212T1

SC-59

8B

22

3000/Tape & Reel

MUN2212T1G

SC-59

(Pb-Free)

MUN2213T1

SC-59

8C

47

3000/Tape & Reel

MUN2213T1G

SC-59

(Pb-Free)

MUN2214T1

SC-59

8D

10

47

3000/Tape & Reel

MUN2214T1G

SC-59

(Pb-Free)

MUN2214T3

SC-59

8D

10

47

10,000/Tape & Reel

MUN2214T3G

SC-59

(Pb-Free)

MUN2215T1

SC-59

8E

10

∞

3000/Tape & Reel

MUN2215T1G

SC-59

(Pb-Free)

MUN2216T1

SC-59

8F

4.7

∞

3000/Tape & Reel

MUN2216T1G

SC-59

(Pb-Free)

MUN2230T1

SC-59

8G

1.0

3000/Tape & Reel

MUN2230T1G

SC-59

(Pb-Free)

MUN2231T1 (Note 3)

MUN2231T1G (Note 3)

SC-59

8H

2.2

3000/Tape & Reel

SC-59

(Pb-Free)

MUN2232T1

SC-59

8J

4.7

3000/Tape & Reel

MUN2232T1G

SC-59

(Pb-Free)

MUN2233T1

SC-59

8K

4.7

47

3000/Tape & Reel

MUN2233T1G

SC-59

(Pb-Free)

MUN2234T1 (Note 3)

MUN2234T1G (Note 3)

SC-59

8L

22

47

3000/Tape & Reel

SC-59

(Pb-Free)

MUN2236T1

SC-59

8N

100

3000/Tape & Reel

MUN2236T1G

SC-59

(Pb-Free)

MUN2237T1

SC-59

8P

47

22

3000/Tape & Reel

MUN2237T1G

SC-59

(Pb-Free)

MUN2240T1 (Note 3)

MUN2240T1G (Note 3)

SC-59

8T

47

∞

3000/Tape & Reel

SC-59

(Pb-Free)

MUN2241T1 (Note 3)

MUN2241T1G (Note 3)

SC-59

8U

100

∞

3000/Tape & Reel

SC-59

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

3. New devices. Updated curves to follow in subsequent data sheets.

http://onsemi.com

2

MUN2211T1 Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector‐Base Cutoff Current (V = 50 V, I = 0)

CB E

I

-

100

500

nAdc

mAdc

CBO

Collector‐Emitter Cutoff Current (V = 50 V, I = 0)

CE B

CEO

Emitter‐Base Cutoff Current

(V = 6.0 V, I = 0)

MUN2211T1, G

MUN2212T1, G

MUN2213T1, G

MUN2214T1, G

MUN2215T1, G

MUN2216T1, G

MUN2230T1, G

MUN2231T1, G

MUN2232T1, G

MUN2233T1, G

MUN2234T1, G

MUN2236T1, G

MUN2237T1, G

MUN2240T1, G

MUN2241T1, G

I

-

0.5

0.2

0.1

0.2

0.9

1.9

4.3

2.3

EBO

EB

C

1.5

0.18

0.13

0.05

0.13

0.2

0.1

Collector‐Base Breakdown Voltage (I = 10 mA, I = 0)

E

V

50

-

Vdc

C

(BR)CBO

Collector‐Emitter Breakdown Voltage (Note 4)

(I = 2.0 mA, I = 0)

(BR)CEO

C

B

ON CHARACTERISTICS (Note 4)

DC Current Gain

(V = 10 V, I = 5.0 mA)

MUN2211T1, G

MUN2212T1, G

MUN2213T1, G

MUN2214T1, G

MUN2215T1, G

MUN2216T1, G

MUN2230T1, G

MUN2231T1, G

MUN2232T1, G

MUN2233T1, G

MUN2234T1, G

MUN2236T1, G

MUN2237T1, G

MUN2240T1, G

MUN2241T1, G

h

FE

35

60

80

160

3.0

8.0

15

80

160

60

-

100

140

350

5.0

CE

C

15

30

200

150

140

350

Collector‐Emitter Saturation Voltage

(I = 10 mA, I = 0.3 mA)

V

Vdc

CE(sat)

MUN2211T1, G

MUN2212T1, G

MUN2213T1, G

MUN2214T1, G

MUN2233T1, G

MUN2236T1, G

MUN2230T1, G

MUN2231T1, G

MUN2237T1, G

MUN2241T1, G

MUN2215T1, G

MUN2216T1, G

MUN2232T1, G

MUN2234T1, G

MUN2240T1, G

-

0.25

C

B

(I = ā10 mA, I = ā5 mA)

C B

(I = ā10 mA, I = ā1 mA)

C B

4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

http://onsemi.com

3

MUN2211T1 Series

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

A

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (Note 5) (Continued)

Output Voltage (on)

(V = 5.0 V, V = 2.5 V, R = 1.0 kW)

V

OL

Vdc

MUN2211T1, G

MUN2212T1, G

MUN2214T1, G

MUN2215T1, G

MUN2216T1, G

MUN2230T1, G

MUN2231T1, G

MUN2232T1, G

MUN2233T1, G

MUN2234T1, G

MUN2213T1, G

MUN2240T1, G

MUN2236T1, G

MUN2237T1, G

MUN2241T1, G

-

0.2

CC

B

L

(V = 5.0 V, V = 3.5 V, R = 1.0 kW)

L

CC

B

(V = 5.0 V, V = 5.5 V, R = 1.0 kW)

CC

B

L

(V = 5.0 V, V = 4.0 V, R = 1.0 kW)

CC

B

L

(V = 5.0 V, V = 5.0 V, R = 1.0 kW)

CC

B

L

Output Voltage (off)

(V = 5.0 V, V = 0.5 V, R = 1.0 kW)

V

OH

Vdc

4.9

-

MUN2211T1, G

MUN2212T1, G

MUN2213T1, G

MUN2214T1, G

MUN2233T1, G

MUN2234T1, G

MUN2230T1, G

MUN2215T1, G

MUN2216T1, G

MUN2231T1, G

MUN2232T1, G

MUN2236T1, G

MUN2237T1, G

MUN2240T1, G

MUN2241T1, G

CC

B

L

(V = ā5.0 V, V = ā0.050 V, R = 1.0 kW)

CC

B

L

(V = ā5.0 V, V = ā0.25 V, R = 1.0 kW)

CC

B

L

Input Resistor

MUN2211T1, G

MUN2212T1, G

MUN2213T1, G

MUN2214T1, G

MUN2215T1, G

MUN2216T1, G

MUN2230T1, G

MUN2231T1, G

MUN2232T1, G

MUN2233T1, G

MUN2234T1, G

MUN2236T1, G

MUN2237T1, G

MUN2240T1, G

MUN2241T1, G

R

7.0

15.4

32.9

7.0

10

22

13

28.6

61.1

13

kW

1

47

10

7.0

3.3

10

13

6.1

4.7

1.0

2.2

4.7

22

0.7

1.5

1.3

2.9

3.3

6.1

15.4

70

28.6

130

61.1

130

100

47

32.9

70

47

100

Resistor Ratio

MUN2211T1, G

MUN2212T1, G

MUN2213T1, G

MUN2214T1, G

MUN2215T1, G

MUN2216T1, G

MUN2230T1, G

MUN2231T1, G

MUN2232T1, G

MUN2233T1, G

MUN2234T1, G

MUN2236T1, G

MUN2237T1, G

MUN2240T1, G

MUN2241T1, G

R /R

1

0.8

0.17

-

1.0

0.21

-

1.2

0.25

-

2

-

0.8

0.055

0.38

0.8

1.7

-

1.0

0.12

0.47

1.0

2.15

-

1.2

0.185

0.56

1.2

2.6

-

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.

http://onsemi.com

4

MUN2211T1 Series

350

300

250

200

150

100

R

= 370°C/W

50

0

q

JA

-ā50

0

50

100

150

T , AMBIENT TEMPERATURE (°C)

A

Figure 1. Derating Curve

http://onsemi.com

5

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1

1

1000

I /I = 10

C B

V

CE

= 10 V

T ꢀ=ꢀ-25°C

A

T ꢀ=ꢀ75°C

A

25°C

75°C

25°C

-25°C

0.1

100

0.01

0.001

10

0

20

40

60

80

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 2. V_CE(sat)versus I_C

Figure 3. DC Current Gain

4

3

100

10

25°C

75°C

f = 1 MHz

I = 0 V

E

T ꢀ=ꢀ-25°C

A

T = 25°C

A

1

0.1

2

1

0

0.01

0.001

V = 5 V

O

0

10

20

30

40

50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

10

T ꢀ=ꢀ-25°C

A

V = 0.2 V

O

25°C

75°C

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 6. Input Voltage versus Output Current

http://onsemi.com

6

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1

1000

1

V

CE

= 10 V

I /I = 10

C B

T ꢀ=ꢀ-25°C

A

T ꢀ=ꢀ75°C

A

25°C

75°C

25°C

0.1

-25°C

100

0.01

10

0.001

1

10

100

0

20

40

60

80

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 7. V_CE(sat)versus I_C

Figure 8. DC Current Gain

4

3

2

1

0

100

10

1

75°C

25°C

f = 1 MHz

T ꢀ=ꢀ-25°C

A

I = 0 V

E

T = 25°C

A

0.1

0.01

V = 5 V

O

0.001

0

10

20

30

40

50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 9. Output Capacitance

Figure 10. Output Current versus Input Voltage

100

V = 0.2 V

O

T ꢀ=ꢀ-25°C

A

10

1

25°C

75°C

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 11. Input Voltage versus Output Current

http://onsemi.com

7

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1

10

1

1000

T ꢀ=ꢀ-25°C

A

I /I = 10

C B

V

CE

= 10 V

T ꢀ=ꢀ75°C

A

25°C

75°C

25°C

-25°C

100

0.1

0.01

10

1

10

100

0

20

40

60

80

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 12. V_CE(sat)versus I_C

Figure 13. DC Current Gain

1

100

10

1

25°C

75°C

f = 1 MHz

I = 0 V

E

T ꢀ=ꢀ-25°C

A

0.8

T = 25°C

A

0.6

0.4

0.1

0.01

0.2

0

V = 5 V

O

0.001

0

10

20

30

40

50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 14. Output Capacitance

Figure 15. Output Current versus Input Voltage

100

V = 0.2 V

O

T ꢀ=ꢀ-25°C

A

25°C

75°C

10

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 16. Input Voltage versus Output Current

http://onsemi.com

8

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1

1

300

T ꢀ=ꢀ-25°C

A

I /I = 10

C B

T ꢀ=ꢀ75°C

A

V

CE

= 10

250

200

150

100

25°C

75°C

25°C

0.1

-25°C

0.01

50

0

0.001

0

20

ā40

ā60

ā80

1

2

4

6

8

10 15 20 40 50 60 70 80 90 100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 17. V_CE(sat)versus I_C

Figure 18. DC Current Gain

4

3.5

3

100

10

1

75°C

25°C

f = 1 MHz

l = 0 V

E

T = 25°C

A

2.5

T ꢀ=ꢀ-25°C

A

2

1.5

1

0.5

0

V = 5 V

O

0

2

4

6

8

10 15 20 25 30 35 40 45 50

0

2

4

6

8

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 19. Output Capacitance

Figure 20. Output Current versus Input Voltage

10

T ꢀ=ꢀ-25°C

A

V = 0.2 V

O

25°C

75°C

1

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 21. Input Voltage versus Output Current

http://onsemi.com

9

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1

1

1000

V

CE

= 10 V

I /I = 10

C B

75°C

25°C

T = -25°C

A

75°C

100

0.1

-25°C

25°C

0.01

10

1

0.001

0

20

30

40

50

1

10

100

10

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 22. V_CE(sat)versus I_C

Figure 23. DC Current Gain

100

10

1

4.5

4

75°C

f = 1 MHz

= 0 V

I

E

3.5

3

25°C

T = 25°C

A

2.5

2

T = -25°C

A

0.1

1.5

1

0.01

V

O

= 5 V

0.5

0.001

0

1

2

3

4

5

6

7

8

9

10

5

10 15 20 25 30 35 40 45 50

V , INPUT VOLTAGE (VOLTS)

in

V , REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 24. Output Capacitance

Figure 25. Output Current versus Input Voltage

10

T = -25°C

A

1

25°C

75°C

V

O

= 0.2 V

40

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 26. Input Voltage versus Output Current

http://onsemi.com

10

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1

1

1000

V

CE

= 10 V

75°C

25°C

I /I = 10

C B

T = -25°C

A

75°C

100

0.1

-25°C

25°C

0.01

10

1

0.001

0

20

30

40

50

1

10

100

10

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 27. V_CE(sat)versus I_C

Figure 28. DC Current Gain

100

10

1

4.5

4

75°C

f = 1 MHz

= 0 V

I

E

25°C

3.5

3

T = 25°C

A

T = -25°C

A

2.5

2

0.1

1.5

1

0.01

V

= 5 V

9

O

0.5

0.001

0

1

2

3

4

5

6

7

8

10

5

10 15 20 25 30 35 40 45 50

V , INPUT VOLTAGE (VOLTS)

in

V , REVERSE BIAS VOLTAGE (VOLTS)

R

Figure 29. Output Capacitance

Figure 30. Output Current versus Input Voltage

10

T = -25°C

A

1

25°C

75°C

V

O

= 0.2 V

0.1

0

10

20

30

40

50

I , COLLECTOR CURRENT (mA)

C

Figure 31. Input Voltage versus Output Current

http://onsemi.com

11

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1

100

1

I /I = 10

C B

75°C

0.1

75°C

-25°C

10

25°C

0.01

T = -25°C

A

V

CE

= 10 V

0.001

1

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 32. V_CE(sat)versus I_C

Figure 33. DC Current Gain

4.5

4

100

10

1

75°C

f = 1 MHz

= 0 V

I

E

3.5

3

25°C

T = 25°C

A

2.5

2

T = -25°C

A

0.1

1.5

1

0.01

V

O

= 5 V

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 34. Output Capacitance

Figure 35. Output Current versus Input Voltage

10

T = -25°C

A

75°C

1

25°C

V

O

= 0.2 V

40

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 36. Input Voltage versus Output Current

http://onsemi.com

12

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1

1000

1

V

CE

= 10 V

I /I = 10

C B

75°C

25°C

75°C

100

0.1

-25°C

25°C

T = -25°C

A

0.01

10

1

0.001

0

10

20

30

40

50

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 37. V_CE(sat)versus I_C

Figure 38. DC Current Gain

6

5

4

3

2

1

100

10

1

f = 1 MHz

= 0 V

75°C

I

E

25°C

T = 25°C

A

T = -25°C

A

0.1

0.01

V

O

= 5 V

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 39. Output Capacitance

Figure 40. Output Current versus Input Voltage

10

T = -25°C

A

1

75°C

25°C

V

O

= 0.2 V

40

0.1

0

10

20

30

50

I , COLLECTOR CURRENT (mA)

C

Figure 41. Input Voltage versus Output Current

http://onsemi.com

13

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1

1000

1

V

CE

= 10 V

I /I = 10

C B

75°C

T = -25°C

A

100

0.1

75°C

25°C

-25°C

25°C

0.01

10

1

0.001

0

5

10

15

20

25

30

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 42. V_CE(sat)versus I_C

Figure 43. DC Current Gain

4

3.5

3

100

10

1

75°C

f = 1 MHz

= 0 V

I

E

25°C

T = 25°C

A

2.5

2

T = -25°C

A

0.1

1.5

1

0.01

V

O

= 5 V

0.5

0

0.001

5

10 15 20 25 30 35 40 45 50

0

1

2

3

4

5

6

7

8

9

10

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 44. Output Capacitance

Figure 45. Output Current versus Input Voltage

10

T = -25°C

A

1

75°C

25°C

V

O

= 0.2 V

20

0.1

0

5

10

15

25

I , COLLECTOR CURRENT (mA)

C

Figure 46. Input Voltage versus Output Current

http://onsemi.com

14

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1

1

1000

V

CE

= 10 V

I /I = 10

C B

T ꢀ=ꢀ-25°C

A

75°C

25°C

75°C

T ꢀ=ꢀ-25°C

A

0.1

100

0.01

10

0

5

10

15

ā20

ā25

ā30

ā35

ā40

0.1

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 47. V_CE(sat)versus I_C

Figure 48. DC Current Gain

100

5

4.5

4

75°C

f = 1 MHz

= 0 V

T ꢀ=ꢀ-25°C

A

l

E

T = 25°C

A

3.5

3

10

1

25°C

2.5

2

1.5

1

V

O

= 5 V

35

0.5

0

0.1

0

5

10

15

20

25

30

35

40

45

0

5

10

15

20

25

30

40

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 49. Output Capacitance

Figure 50. Output Current versus Input Voltage

100

25°C

75°C

V

O

= 0.2 V

T ꢀ=ꢀ-25°C

A

10

1

0.1

0

5

10

15

20

25

30

35

I , COLLECTOR CURRENT (mA)

C

Figure 51. Input Voltage versus Output Current

http://onsemi.com

15

MUN2211T1 Series

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1

1

1000

V

CE

= 10 V

I /I = 10

C B

75°C

25°C

T ꢀ=ꢀ-25°C

A

25°C

75°C

T ꢀ=ꢀ-25°C

A

100

0.1

10

1

0.01

0

5

10

ā15

ā20

ā25

ā30

ā35

ā40

1

10

100

I , COLLECTOR CURRENT (mA)

C

I , COLLECTOR CURRENT (mA)

C

Figure 52. V_CE(sat)versus I_C

Figure 53. DC Current Gain

2

1.8

1.6

1.4

1.2

1

100

10

1

75°C

T ꢀ=ꢀ-25°C

A

25°C

0.8

0.6

0.4

0.1

f = 1 MHz

= 0 V

0.01

V

O

= 5 V

14

l

E

0.2

0

T = 25°C

A

0.001

0

5

10

15

20

25

30

35

40

45

0

2

4

6

8

10

12

16

V , REVERSE BIAS VOLTAGE (VOLTS)

R

V , INPUT VOLTAGE (VOLTS)

in

Figure 54. Output Capacitance

Figure 55. Output Current versus Input Voltage

100

V

O

= 0.2 V

T ꢀ=ꢀ-25°C

A

25°C

75°C

10

1

0

5

10

15

20

25

30

35

40

I , COLLECTOR CURRENT (mA)

C

Figure 56. Input Voltage versus Output Current

http://onsemi.com

16

MUN2211T1 Series

TYPICAL APPLICATIONS FOR NPN BRTs

+12 V

ISOLATED

LOAD

FROM mP OR

OTHER LOGIC

Figure 57. Level Shifter: Connects 12 or 24 Volt Circuits to Logic

+12 V

V

CC

OUT

IN

LOAD

Figure 58. Open Collector Inverter:

Inverts the Input Signal

Figure 59. Inexpensive, Unregulated Current Source

http://onsemi.com

17

MUN2211T1 Series

PACKAGE DIMENSIONS

SC-59

CASE 318D-04

ISSUE G

NOTES:

ꢁꢂ1. DIMENSIONING AND TOLERANCING PER ANSI

D

Y14.5M, 1982.

ꢁꢂ2. CONTROLLING DIMENSION: MILLIMETER.

MILLIMETERS

INCHES

NOM

3

DIM

A

A1

b

c

D

MIN

1.00

0.01

0.35

0.09

2.70

1.30

1.70

0.20

2.50

NOM

1.15

0.06

0.43

0.14

2.90

1.50

1.90

0.40

2.80

MAX

1.30

0.10

0.50

0.18

3.10

1.70

2.10

0.60

3.00

MIN

MAX

0.051

0.004

0.020

0.007

0.122

0.067

0.083

0.024

0.118

E

H

E

2

1

0.039

0.001

0.014

0.003

0.106

0.051

0.067

0.008

0.099

0.045

0.002

0.017

0.005

0.114

0.059

0.075

0.016

0.110

b

E

e

L

H

E

C

STYLE 1:

A

PIN 1. EMITTER

2. BASE

3. COLLECTOR

L

A1

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.4

0.094

1.0

0.039

mm

inches

ǒ

Ǔ

SCALE 10:1

0.8

0.031

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800-282-9855 Toll Free

ꢁUSA/Canada

Europe, Middle East and Africa Technical Support:

ꢁPhone: 421 33 790 2910

Japan Customer Focus Center

ꢁPhone: 81-3-5773-3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

ꢁLiterature Distribution Center for ON Semiconductor

ꢁP.O. Box 5163, Denver, Colorado 80217 USA

ꢁPhone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

ꢁFax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada

ꢁEmail: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

MUN2211T1/D

http://onsemi.com

18


型号：	MUN2214T1G
厂家：	ONSEMI
描述：	Bias Resistor Transistors 偏置电阻晶体管晶体小信号双极晶体管开关光电二极管
文件：	总18页 (文件大小：161K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MUN2214T1G [ONSEMI]

相关型号：

MUN2214T3

MUN2214T3G

MUN2215

MUN2215

MUN2215-G

MUN2215RT1

MUN2215T1

MUN2215T1

MUN2215T1

MUN2215T1G

MUN2215T3

MUN2216