MMBTA42LT1G [ONSEMI]

High Voltage Transistors; 高电压晶体管
MMBTA42LT1G
型号: MMBTA42LT1G
厂家: ONSEMI    ONSEMI
描述:

High Voltage Transistors
高电压晶体管

晶体 小信号双极晶体管 光电二极管 PC
文件: 总4页 (文件大小:58K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBTA42LT1,  
MMBTA43LT1  
MMBTA42LT1 is a Preferred Device  
High Voltage Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Package May be Available. The G−Suffix Denotes a  
Pb−Free Lead Finish  
COLLECTOR  
3
MAXIMUM RATINGS  
Rating  
Symbol MMBTA42 MMBTA43  
Unit  
Vdc  
1
BASE  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Collector Current−Continuous  
V
CEO  
V
CBO  
V
EBO  
300  
300  
6.0  
200  
200  
6.0  
Vdc  
2
Vdc  
EMITTER  
I
C
500  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
3
Symbol  
Max  
Unit  
Total Device Dissipation FR−5 Board (Note 1)  
P
D
225  
mW  
1
T = 25°C  
Derate above 25°C  
A
2
1.8  
556  
300  
mW/°C  
°C/W  
mW  
SOT−23 (TO−236)  
CASE 318  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
STYLE 6  
Total Device Dissipation  
P
D
Alumina Substrate (Note 2)  
T = 25°C  
Derate above 25°C  
A
MARKING DIAGRAMS  
2.4  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
q
JA  
T , T  
J
−55 to  
+150  
1D X  
M1E X  
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
MMBTA42LT1  
MMBTA43LT1  
1D, M1E = Specific Device Code  
= Date Code  
X
ORDERING INFORMATION  
Device  
MMBTA42LT1  
Package  
Shipping  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
3000/Tape & Reel  
MMBTA42LT1G SOT−23  
MMBTA43LT1  
MMBTA43LT3  
SOT−23  
SOT−23  
10000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
November, 2003 − Rev. 5  
MMBTA42LT1/D  
MMBTA42LT1, MMBTA43LT1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage (Note 3)  
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
(I = 1.0 mAdc, I = 0)  
MMBTA42  
MMBTA43  
300  
200  
C
B
CollectorBase Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
V
Vdc  
MMBTA42  
MMBTA43  
300  
200  
C
E
EmitterBase Breakdown Voltage  
(I = 100 mAdc, I = 0)  
6.0  
Vdc  
E
C
Collector Cutoff Current  
(V = 200 Vdc, I = 0)  
I
mAdc  
CBO  
MMBTA42  
MMBTA43  
0.1  
0.1  
CB  
E
(V = 160 Vdc, I = 0)  
CB  
E
Emitter Cutoff Current  
(V = 6.0 Vdc, I = 0)  
I
mAdc  
EBO  
MMBTA42  
MMBTA43  
0.1  
0.1  
EB  
C
(V = 4.0 Vdc, I = 0)  
EB  
C
ON CHARACTERISTICS (Note 3)  
DC Current Gain  
h
FE  
(I = 1.0 mAdc, V = 10 Vdc)  
Both Types  
Both Types  
25  
40  
C
CE  
(I = 10 mAdc, V = 10 Vdc)  
C
CE  
(I = 30 mAdc, V = 10 Vdc)  
MMBTA42  
MMBTA43  
40  
40  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
MMBTA42  
MMBTA43  
0.5  
0.5  
C
B
Base−Emitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
V
0.9  
BE(sat)  
C
B
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain − Bandwidth Product  
f
50  
MHz  
pF  
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)  
C
CE  
Collector−Base Capacitance  
(V = 20 Vdc, I = 0, f = 1.0 MHz)  
C
cb  
MMBTA42  
MMBTA43  
3.0  
4.0  
CB  
E
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
http://onsemi.com  
2
MMBTA42LT1, MMBTA43LT1  
120  
100  
V
CE  
= 10 Vdc  
T = +125°C  
J
80  
60  
25°C  
40  
20  
0
−55°C  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
100  
80  
70  
60  
50  
40  
C
eb  
@ 1MHz  
10  
1.0  
0.1  
C
cb  
@ 1MHz  
30  
20  
10  
T = 25°C  
J
V
= 20 V  
f = 20 MHz  
CE  
0.1  
1.0  
10  
100  
1000  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mA)  
C
Figure 2. Capacitance  
Figure 3. Current−Gain − Bandwidth  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
V
V
@ 25°C, I /I = 10  
@ 125°C, I /I = 10  
C B  
CE(sat)  
C B  
CE(sat)  
CE(sat)  
BE(sat)  
V
V
V
V
V
@ −55°C, I /I = 10  
C B  
@ 25°C, I /I = 10  
C B  
@ 125°C, I /I = 10  
C B  
BE(sat)  
BE(sat)  
BE(on)  
@ −55°C, I /I = 10  
C B  
@ 25°C, V = 10 V  
CE  
V
V
@ 125°C, V = 10 V  
CE  
BE(on)  
@ −55°C, V = 10 V  
CE  
BE(on)  
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (mA)  
C
Figure 4. “ON” Voltages  
http://onsemi.com  
3
MMBTA42LT1, MMBTA43LT1  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AH  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A
L
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
3
S
C
B
1
2
4. 318−03 AND −07 OBSOLETE, NEW STANDARD  
318−08.  
V
G
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
2.80  
1.20  
0.89  
0.37  
1.78  
MAX  
3.04  
1.40  
1.11  
A
B
C
D
G
H
J
0.1102 0.1197  
0.0472 0.0551  
0.0350 0.0440  
0.0150 0.0200  
0.0701 0.0807  
0.50  
2.04  
0.100  
0.177  
0.69  
1.02  
2.64  
0.60  
H
J
D
K
0.0005 0.0040 0.013  
0.0034 0.0070 0.085  
K
L
0.0140 0.0285  
0.0350 0.0401  
0.0830 0.1039  
0.0177 0.0236  
0.35  
0.89  
2.10  
0.45  
S
V
STYLE 6:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
Figure 5. SOT−23  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
MMBTA42LT1/D  

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