MMBTA42LT3G [ONSEMI]
High Voltage Transistors; 高电压晶体管
| 型号： | MMBTA42LT3G |
| 厂家： | 
ONSEMI |
| 描述： | High Voltage Transistors |
| 文件： | 总6页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA42LT1G,
MMBTA43LT1G
High Voltage Transistors
NPN Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
BASE
MAXIMUM RATINGS
2
Characteristic
Symbol
Value
Unit
EMITTER
Collector−Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
MMBTA42
MMBTA43
300
200
3
Collector−Base Voltage
Emitter−Base Voltage
Vdc
Vdc
MMBTA42
MMBTA43
300
200
1
2
MMBTA42
MMBTA43
6.0
6.0
SOT−23 (TO−236)
CASE 318
STYLE 6
Collector Current − Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAMS
Total Device Dissipation FR−5 Board
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
1D M G
M1E M G
G
G
Thermal Resistance, Junction−to−Ambient
R
556
°C/W
q
JA
1
1
Total Device Dissipation Alumina
P
D
Substrate (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
1D = MMBTA42LT
M1E = MMBTA43LT
M
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
= Date Code*
= Pb−Free Package
T , T
J
−55 to +150
stg
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
June, 2011 − Rev. 10
MMBTA42LT1/D
MMBTA42LT1G, MMBTA43LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mAdc, I = 0)
MMBTA42
MMBTA43
300
200
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
Vdc
MMBTA42
MMBTA43
300
200
−
−
C
E
Emitter−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
6.0
−
Vdc
E
C
Collector Cutoff Current
(V = 200 Vdc, I = 0)
I
mAdc
CBO
MMBTA42
MMBTA43
−
−
0.1
0.1
CB
E
(V = 160 Vdc, I = 0)
CB
E
Emitter Cutoff Current
I
mAdc
EBO
(V = 6.0 Vdc, I = 0)
MMBTA42
MMBTA43
−
−
0.1
0.1
EB
C
(V = 4.0 Vdc, I = 0)
EB
C
ON CHARACTERISTICS (Note 3)
DC Current Gain
h
FE
−
(I = 1.0 mAdc, V = 10 Vdc)
Both Types
Both Types
25
40
−
−
C
CE
(I = 10 mAdc, V = 10 Vdc)
C
CE
(I = 30 mAdc, V = 10 Vdc)
MMBTA42
MMBTA43
40
40
−
−
C
CE
Collector−Emitter Saturation Voltage
(I = 20 mAdc, I = 2.0 mAdc)
V
Vdc
Vdc
CE(sat)
MMBTA42
MMBTA43
−
−
0.5
0.5
C
B
Base−Emitter Saturation Voltage
(I = 20 mAdc, I = 2.0 mAdc)
V
−
0.9
BE(sat)
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
50
−
MHz
pF
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)
C
CE
Collector−Base Capacitance
(V = 20 Vdc, I = 0, f = 1.0 MHz)
C
cb
MMBTA42
MMBTA43
−
−
3.0
4.0
CB
E
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
http://onsemi.com
2
MMBTA42LT1G, MMBTA43LT1G
TYPICAL CHARACTERISTICS
1000
1.2
V
CE
= 10 V
I /I = 10
C
B
1.0
0.8
150°C
T = 150°C
J
25°C
100
10
0.6
0.4
0.2
0.0
25°C
−55°C
−55°C
0.1
1
10
100
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−55°C
25°C
−55°C
25°C
150°C
150°C
0.1
0
0.1
0
I /I = 10
I /I = 10
C B
C
B
0.1
1
10
100
0.1
1
10
100
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 3. Base−Emitter Saturation Voltage vs.
Figure 4. Base−Emitter On Voltage vs.
Collector Current
Collector Current
0
−0.4
−0.8
−1.2
−1.6
−2.0
100
10
V
CE
= 10 V
T = 25°C
f = 1 MHz
C
J
ibo
C
obo
q
, for V
BE
VB
1
−55°C to 150°C
−2.4
−2.8
0.1
0.1
1
10
100
0.1
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 5. Base−Emitter Temperature
Figure 6. Capacitance
Coefficient
http://onsemi.com
3
MMBTA42LT1G, MMBTA43LT1G
TYPICAL CHARACTERISTICS
100
V
CE
= 20 V
T = 25°C
J
10
1
10
100
I , COLLECTOR CURRENT (mA)
C
Figure 7. Current−Gain — Bandwidth Product
http://onsemi.com
4
MMBTA42LT1G, MMBTA43LT1G
ORDERING INFORMATION
Device Order Number
MMBTA42LT1G
†
Package Type
Shipping
SOT−23
(Pb−Free)
3,000 / Tape & Reel
10,000 / Tape & Reel
3,000 / Tape & Reel
MMBTA42LT3G
MMBTA43LT1G
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
MMBTA42LT1G, MMBTA43LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
SEE VIEW C
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
H
E
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
c
1
2
b
0.25
e
q
A
H
q
2.10
0°
2.40
−−−
2.64
10°
0.083
0°
0.094
−−−
0.104
10°
E
L
A1
STYLE 6:
PIN 1. BASE
L1
VIEW C
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
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Phone: 81−3−5773−3850
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Order Literature: http://www.onsemi.com/orderlit
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Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MMBTA42LT1/D
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