MMBTA42LT1HTSA1 [INFINEON]
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3;
| 型号： | MMBTA42LT1HTSA1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：525K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMBTA42/MMBTA42
NPN Silicon High-Voltage Transistors
• Low collector-emitter saturation voltage
• Complementary types:
2
3
1
SMBTA92 / MMBTA92(PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
s1D
Pin Configuration
Package
SOT23
SMBTA42/MMBTA42
1=B
2=E
3=C
Maximum Ratings
Parameter
Symbol
Value
Unit
300
300
6
500
100
360
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
V
V
V
CEO
CBO
EBO
mA
mW
°C
I
C
I
B
P
tot
T ≤ 74 °C
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
Symbol
Value
≤ 210
Unit
K/W
1)
R
thJS
1
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-12-19
1
SMBTA42/MMBTA42
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
300
-
-
-
-
-
-
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 1 mA, I = 0
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0
300
6
C
E
Emitter-base breakdown voltage
I = 100 µA, I = 0
E
C
Collector-base cutoff current
I
µA
CBO
V
V
= 200 V, I = 0
-
-
-
-
-
-
0.1
20
CB
CB
E
= 200 V, I = 0 , T = 150 °C
E
A
100 nA
Emitter-base cutoff current
I
EBO
V
= 5 V, I = 0
EB
C
1)
-
DC current gain
h
FE
I = 1 mA, V = 10 V
25
40
40
-
-
-
-
-
-
C
CE
I = 10 mA, V = 10 V
C
CE
I = 30 mA, V = 10 V
C
CE
1)
Collector-emitter saturation voltage
I = 20 mA, I = 2 mA
V
-
-
0.5
V
CEsat
C
B
1)
Base emitter saturation voltage
I = 20 mA, I = 2 mA
V
-
-
0.9
BEsat
C
B
AC Characteristics
Transition frequency
50
-
70
-
-
MHz
pF
f
T
I = 10 MHz, V = 20 V, f = 100 MHz
C
CE
3
Collector-base capacitance
= 20 V, f = 1 MHz
C
cb
V
CB
1Pulse test: t < 300µs; D < 2%
2011-12-19
2
SMBTA42/MMBTA42
DC current gain h = ƒ(I )
Operating range I = ƒ(V
)
FE
C
C
CEO
V
= 10 V
T = 25°C, D = 0
CE
A
10 3
mA
SMBTA 42/43
EHP00844
103
5
10 µs
h FE
10 2
10 1
10 0
102
5
100 µs
1 ms
DC
101
5
10 -1
10 0
100
10 1
10 2
10 3
10 -1
5 10 0
5 10 1
5 10 2 mA 10 3
V
V
CE
Ι C
Collector current I = ƒ(V )
Collector cutoff current I
= ƒ(T )
C
BE
CBO A
V
= 10V
V
= 160 V
CE
CBO
SMBTA 42/43
EHP00843
SMBTA 42/43
EHP00842
103
mA
104
nA
Ι
C
max
103
5
Ι
102
5
CBO
102
5
101
5
typ
101
5
100
5
100
5
10-1
10-1
0
0.5
1.0
V
1.5
0
50
100
C 150
VBE
TA
2011-12-19
3
SMBTA42/MMBTA42
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 10 V, f = 100 MHz
Emitter-base capacitance C = ƒ(V )
CE
eb
EB
SMBTA 42/43
EHP00839
103
MHz
90
pF
fT
70
60
50
40
30
20
10
0
102
CEB
5
CCB
22
101
10 0
5
10 1
5
10 2
5
10 3
V
0
4
8
12
16
mA
Ι C
V
(V
CB EB
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
K/W
400
mW
320
280
240
200
160
120
80
10 2
10 1
10 0
10 -1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
40
0
0
15 30 45 60 75 90 105 120
150
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
°C
S
T
t
p
2011-12-19
4
SMBTA42/MMBTA42
Permissible Pulse Load
P
/P
= ƒ(t )
totmax totDC p
SMBTA 42/43
EHP00840
103
5
Ptotmax
PtotDC
t p
t p
T
D
=
T
102
5
D
0
=
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
100
10-6 10-5 10-4 10-3 10-2
s
100
t p
2011-12-19
5
Package SOT23
SMBTA42/MMBTA42
Package Outline
0.1
1
0.1 MAX.
0.1
2.9
B
3
1
2
1)
+0.1
0.4
A
-0.05
0.08...0.15
0...8˚
C
0.95
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2011-12-19
6
SMBTA42/MMBTA42
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-12-19
7
相关型号：
MMBTA42LT1XT
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
INFINEON
MMBTA42T/R
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal
NXP
MMBTA42TRL
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal
NXP
MMBTA42TRL13
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, BIP General Purpose Small Signal
NXP
©2020 ICPDF网 联系我们和版权申明