MJD31CT4 [ONSEMI]
Complementary Power Transistors; 互补功率晶体管
| 型号： | MJD31CT4 |
| 厂家： | 
ONSEMI |
| 描述： | Complementary Power Transistors |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose amplifier and low speed switching
applications.
SILICON
POWER TRANSISTORS
3 AMPERES
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Straight Lead Version in Plastic Sleeves (“1” Suffix)
• Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
• Electrically Similar to Popular TIP31 and TIP32 Series
40 AND 100 VOLTS
15 WATTS
• Epoxy Meets UL 94, V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
MARKING
DIAGRAMS
• Pb−Free Packages are Available
4
DPAK
YWW
CASE 369C
STYLE 1
J3xxG
2
1
MAXIMUM RATINGS
3
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
V
Vdc
CEO
4
40
100
MJD31, MJD32
MJD31C, MJD32C
DPAK−3
CASE 369D
STYLE 1
YWW
J3xxG
Collector−Base Voltage
Emitter−Base Voltage
V
Vdc
CB
EB
40
100
MJD31, MJD32
MJD31C, MJD32C
1
2
3
V
5
Vdc
Adc
Collector Current − Continuous
− Peak
I
3
5
C
Y
WW
xx
= Year
= Work Week
= 1, 1C, 2, or 2C
Base Current
I
1
Adc
B
G
= Pb−Free Package
P
P
15
0.12
W
W/°C
Total Power Dissipation @ T = 25°C
Derate above 25°C
D
D
C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1.56
0.012
Total Power Dissipation @ T = 25°C
Derate above 25°C
W
W/°C
A
Operating and Storage Junction
Temperature Range
T , T
−65 to
+150
°C
J
stg
Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.3
80
Unit
°C/W
°C/W
°C
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient*
Lead Temperature for Soldering Purposes
R
q
JC
R
q
JA
T
260
L
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
June, 2005 − Rev. 6
MJD31/D
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I = 30 mAdc, I = 0)
V
Vdc
CEO(sus)
MJD31, MJD32
MJD31C, MJD32C
−
−
40
100
C
B
I
−
50
mAdc
Collector Cutoff Current
(V = 40 Vdc, I = 0)
CEO
MJD31, MJD32
CE
B
(V = 60 Vdc, I = 0)
MJD31C, MJD32C
CE
B
ICES
−
−
20
1
mAdc
Collector Cutoff Current
(V = Rated V , V = 0)
CE
CEO
EB
I
mAdc
Emitter Cutoff Current
(V = 5 Vdc, I = 0)
EBO
BE
C
ON CHARACTERISTICS (Note 1)
h
FE
−
DC Current Gain
(I = 1 Adc, V = 4 Vdc)
25
10
−
C
CE
(I = 3 Adc, V = 4 Vdc)
50
C
CE
V
−
−
1.2
1.8
Vdc
Vdc
Collector−Emitter Saturation Voltage
(I = 3 Adc, I = 375 mAdc)
CE(sat)
C
B
V
Base−Emitter On Voltage
(I = 3 Adc, V = 4 Vdc)
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
f
3
−
−
MHz
−
Current Gain − Bandwidth Product (Note 2)
T
(I = 500 mAdc, V = 10 Vdc, f = 1 MHz)
test
C
CE
h
20
Small−Signal Current Gain
(I = 0.5 Adc, V = 10 Vdc, f = 1 kHz)
fe
C
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. f = ⎪h ⎪• f
.
test
T
fe
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2
t @ V = 10 V
r CC
−
55°C
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
TYPICAL CHARACTERISTICS
V
CC
+ꢀ30 V
T
A
T
C
2.5 25
R
C
25 ms
2
20
+11 V
0
R
B
SCOPE
1.5 15
D
T (SURFACE MOUNT)
A
1
51
−ꢀ9 V
T
C
t , t ≤ 10 ns
r
f
DUTY CYCLE = 1%
−ꢀ4 V
1
0.5
0
10
5
R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS
B
C
ꢃD MUST BE FAST RECOVERY TYPE, e.g.:
1
ꢃꢃ1N5825 USED ABOVE I ≈ 100 mA
B
ꢃꢃMSD6100 USED BELOW I ≈ 100 mA
B
REVERSE ALL POLARITIES FOR PNP.
0
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
Figure 2. Switching Time Test Circuit
2
1
500
300
I /I = 10
C B
T = 150°C
J
V
= 2 V
CE
T = 25°C
J
t @ V = 30 V
r CC
0.7
0.5
25°C
100
70
0.3
50
30
0.1
0.07
0.05
t @ V
d
= 2 V
BE(off)
10
7
0.03
0.02
5
0.03 0.05 0.07 0.1
0.3
0.5 0.7
1
3
0.03
0.07 0.1
0.3
0.5 0.7
1
3
0.05
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 3. DC Current Gain
Figure 4. Turn−On Time
3
2
1.4
1.2
I
= I
B1 B2
I /I = 10
T = 25°C
J
t ′
s
C B
t ′ = t − 1/8 t
f
s
s
1
t @ V = 30 V
f CC
T = 25°C
1
J
0.7
0.5
0.8
V
@ I /I = 10
C B
0.3
0.2
t @ V = 10 V
f CC
BE(sat)
0.6
0.4
V
@ V = 2 V
CE
BE
0.1
0.07
0.05
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.03
0.0030.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2
3
0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7
1
2
3
I , COLLECTOR CURRENT (AMPS)
C
I , COLLECTOR CURRENT (AMPS)
C
Figure 5. “On” Voltages
Figure 6. Turn−Off Time
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3
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
300
2
1.6
1.2
0.8
0.4
0
T = +ꢀ25°C
J
T = 25°C
J
200
I = 0.3 A
C
1 A
3 A
100
C
eb
70
50
C
cb
30
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30 40
1
2
5
10
20
50
100 200
500 1000
V , REVERSE VOLTAGE (VOLTS)
R
I , BASE CURRENT (mA)
B
Figure 7. Collector Saturation Region
Figure 8. Capacitance
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
P
(pk)
R
R
= r(t) R
q
JC
q
q
0.1
JC(t)
= 8.33°C/W MAX
JC
0.05
0.1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
0.07
0.05
t
1
0.01
t
2
1
T
− T = P q
C (pk) JC(t)
J(pk)
0.03
0.02
DUTY CYCLE, D = t /t
SINGLE PULSE
1 2
0.01
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1
2
3
5
10
20 30
50
100
200 300 500
1 k
t, TIME (ms)
Figure 9. Thermal Response
10
5
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
100ꢂms
500ꢂms
3
2
breakdown. Safe operating area curves indicate I − V
C
CE
1ꢂms
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
1
dc
0.5
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.3
0.2
The data of Figure 10 is based on T
variable depending on conditions. Second breakdown pulse
= 150_C; T is
J(pk)
C
CURVES APPLY BELOW RATED V
CEO
0.1
limits are valid for duty cycles to 10% provided T
J(pk)
T = 25°C SINGLE PULSE
C
v 150_C.
T
may be calculated from the data in
0.05
J(pk)
T = 150°C
J
MJD31, MJD32
0.03
0.02
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJD31C, MJD32C
0.01
1.5 2
3
5
7
10
20 30
50 70 100 150
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 10. Active Region Safe Operating Area
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4
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
ORDERING INFORMATION
†
Device
MJD31C
Package Type
Package
369C
Shipping
DPAK
75 Units / Rail
75 Units / Rail
MJD31CG
DPAK
369C
(Pb−Free)
MJD31C1
DPAK−3
369D
369D
75 Units / Rail
75 Units / Rail
MJD31C1G
DPAK−3
(Pb−Free)
MJD31CRL
DPAK
369C
369C
1800 Tape & Reel
1800 Tape & Reel
MJD31CRLG
DPAK
(Pb−Free)
MJD31CT4
DPAK
369C
369C
2500 Tape & Reel
2500 Tape & Reel
MJD31CT4G
DPAK
(Pb−Free)
MJD31T4
DPAK
369C
369C
2500 Tape & Reel
2500 Tape & Reel
MJD31T4G
DPAK
(Pb−Free)
MJD32C
DPAK
369C
369C
75 Units / Rail
75 Units / Rail
MJD32CG
DPAK
(Pb−Free)
MJD32C1
DPAK−3
369D
369D
75 Units / Rail
75 Units / Rail
MJD32C1G
DPAK−3
(Pb−Free)
MJD32CRL
DPAK
369C
369C
1800 Tape & Reel
1800 Tape & Reel
MJD32CRLG
DPAK
(Pb−Free)
MJD32CT4
DPAK
369C
369C
2500 Tape & Reel
2500 Tape & Reel
MJD32CT4G
DPAK
(Pb−Free)
MJD32RL
DPAK
369C
369C
1800 Tape & Reel
1800 Tape & Reel
MJD32RLG
DPAK
(Pb−Free)
MJD32T4
DPAK
369C
369C
2500 Tape & Reel
2500 Tape & Reel
MJD32T4G
DPAK
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
NOTES:
SEATING
PLANE
−T−
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
C
2. CONTROLLING DIMENSION: INCH.
B
R
INCHES
DIM MIN MAX
MILLIMETERS
E
V
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.22
6.73
2.38
0.88
0.58
1.14
A
B
C
D
E
F
G
H
J
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
4
2
Z
A
K
S
1
3
4.58 BSC
U
0.87
0.46
2.60
1.01
0.58
2.89
K
L
2.29 BSC
F
J
R
S
U
V
Z
0.180 0.215
0.025 0.040
4.57
0.63
0.51
0.89
3.93
5.45
1.01
−−−
1.27
−−−
L
H
0.020
0.035 0.050
0.155 −−−
−−−
D 2 PL
M
G
0.13 (0.005)
T
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
3.0
0.244
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
mm
inches
ǒ
Ǔ
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
NOTES:
C
B
R
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
V
S
E
INCHES
DIM MIN MAX
MILLIMETERS
MIN
5.97
6.35
2.19
0.69
0.46
0.94
MAX
6.35
6.73
2.38
0.88
0.58
1.14
4
2
Z
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
A
K
1
3
−T−
SEATING
PLANE
2.29 BSC
0.87
0.46
8.89
4.45
0.63
0.89
3.93
1.01
0.58
9.65
5.45
1.01
1.27
−−−
J
F
H
0.155
−−−
D 3 PL
STYLE 1:
PIN 1. BASE
G
M
T
0.13 (0.005)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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7
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
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Order Literature: http://www.onsemi.com/litorder
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Email: orderlit@onsemi.com
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
MJD31/D
相关型号：
MJD31CTF_SBDD001A
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, LEAD FREE, DPAK-3
FAIRCHILD
MJD31TF
Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin, DPAK-3
FAIRCHILD
MJD32
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
FAIRCHILD
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