MJD31CT4-A [STMICROELECTRONICS]
Low voltage NPN power transistor; 低电压NPN功率晶体管
| 型号： | MJD31CT4-A |
| 厂家： | 
ST |
| 描述： | Low voltage NPN power transistor |
| 文件： | 总9页 (文件大小：241K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD31CT4-A
Low voltage NPN power transistor
General features
■ This device is qualified for automotive
application
■ Surface-mounting TO-252 power package in
tape & reel
■ In compliance with the 2002/93/EC European
3
1
Directive
Applications
DPAK
TO-252
■ General purpose switching and amplifier
transistor
Description
Internal schematic diagram
The device is manufactured in Planar technology
with “Base Island” layout. The resulting transistor
shows exceptional high gain performance
coupled with very low saturation voltage.
Order codes
Part Number
Marking
Package
Packaging
MJD31CT4-A
MJD31C
DPAK
Tape & reel
April 2007
Rev 1
1/9
www.st.com
9
Electrical ratings
MJD31CT4-A
1
Electrical ratings
Table 1.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
V
V
Collector-base voltage (I = 0)
100
V
V
CBO
CEO
EBO
E
Collector-base voltage (I = 0)
100
B
Emitter-base voltage (I = 0)
5
V
C
I
Collector current
Collector peak current
Base current
3
A
C
I
5
A
CM
I
1
15
A
B
P
Total dissipation at T = 25°C
W
°C
°C
TOT
c
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
2/9
MJD31CT4-A
Electrical characteristics
2
Electrical characteristics
(T
= 25°C unless otherwise specified)
case
Table 2.
Symbol
Electrical characteristics
Parameter
Test Conditions
= 100V
CE
Min. Typ. Max. Unit
Collector cut-off current
V
I
20
50
µA
µA
CES
(V = 0)
BE
Collector cut-off current
I
V
V
= 60V
= 5V
CEO
CB
EB
(I = 0)
B
Emitter cut-off current
I
0.1
mA
EBO
(I = 0)
C
Collector-emitter
sustaining voltage
(1)
V
CEO(sus)
I =30mA
100
V
C
(I = 0)
B
(1)
I = 3A
_
_
I = 375mA
B
Collector-emitter
saturation voltage
V
C
CE(sat)
1.2
1.8
V
V
(1)
I = 3A
V
= 4V
CE
Base-emitter on voltage
DC current gain
V
C
BE(on)
I = 1A
_ _ V =4V
CE
25
10
C
h
FE
I = 3A
V
=4V
CE
50
C
Note (1) Pulsed duration = 300 µs, duty cycle ≤1.5%
2.1
Electrical characteristic (curves)
Figure 1.
Safe operating area
Figure 2.
Derating curve
3/9
Electrical characteristics
Figure 3.
MJD31CT4-A
DC current gain
Figure 4.
DC current gain
Figure 5.
Collector-emitter saturation Figure 6.
voltage
Base-emitter saturation
voltage
Figure 7.
Collector-emitter on voltage Figure 8.
Resistive load switching time
4/9
MJD31CT4-A
Electrical characteristics
Figure 9.
Resistive load switching time
2.2
Test circuits
Figure 10. Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
Figure 11. Inductive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
5/9
Package mechanical data
MJD31CT4-A
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
6/9
MJD31CT4-A
Package mechanical data
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
TYP.
MAX.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
10.10
MIN.
0.087
0.035
0.001
0.025
0.204
0.018
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.213
0.024
0.024
0.244
0.260
0.181
0.398
A
A1
A2
B
B2
C
C2
D
E
G
H
L2
L4
V2
0.8
0.031
0.60
0o
1.00
8o
0.024
0o
0.039
0o
P032P_B
7/9
Revision history
MJD31CT4-A
4
Revision history
Table 3.
Date
24-Apr-2007
Revision history
Revision
Changes
1
Initial release.
8/9
MJD31CT4-A
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9/9
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