MJD31CTF [FAIRCHILD]
NPN Epitaxial Silicon Transistor; NPN外延硅晶体管
| 型号： | MJD31CTF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | NPN Epitaxial Silicon Transistor |
| 文件： | 总6页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2012
MJD31/31C
NPN Epitaxial Silicon Transistor
Features
• General Purpose Amplifier
• Low Speed Switching Applications
• Load Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular TIP31 and TIP31C
D-PAK
I-PAK
1
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
Collector-Base Voltage
Value
Units
VCBO
: MJD31
: MJD31C
40
100
V
V
VCEO
Collector-Emitter Voltage
: MJD31
: MJD31C
40
100
V
V
VEBO
IC
ICP
IB
Emitter-Base Voltage
Collector Current (DC)
5
V
A
3
Collector Current (Pulse)
Base Current
1
1
A
A
PC
Collector Dissipation (TC = 25°C)
Collector Dissipation (Ta = 25°C)
Junction Temperature
15
W
W
°C
°C
1.56
TJ
150
TSTG
Storage Temperature
- 65 to 150
Ordering Information
Part Number
MJD31CTF
Marking
Package
D-PAK
Packing Method
Tape & Reel
Tube
Remarks
MJD31C
MJD31CITU
MJD31C-I
I-PAK
© 2012 Fairchild Semiconductor Corporation
MJD31/31C Rev. A4
www.fairchildsemi.com
1
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
VCEO(sus)
* Collector-Emitter Sustaining Voltage
: MJD31
: MJD31C
IC = 30mA, IB = 0
IC = 30mA, IB = 0
40
100
V
V
ICEO
Collector Cut-off Current
: MJD31
VCE = 40V, IB = 0
VCE = 60V, IB = 0
50
50
μA
μA
: MJD31C
ICES
Collector Cut-off Current
: MJD31
VCE = 40V, VBE = 0
VCE = 100V, VBE = 0
20
20
μA
μA
: MJD31C
IEBO
hFE
Emitter Cut-off Current
VBE = 5V, IC = 0
1
mA
* DC Current Gain
VCE = 4V, IC = 1A
25
10
VCE = 4V, IC = 3A
50
1.2
1.8
V
CE(sat)
* Collector-Emitter Saturation Voltage IC = 3A, IB = 375mA
V
V
VBE(on)
fT
* Base-Emitter On Voltage
VCE = 4A, IC = 3A
Current Gain Bandwidth Product
VCE = 10V, IC = 500mA
3
MHz
* Pulse Test: PW≤300μs, Duty Cycle≤2%
© 2012 Fairchild Semiconductor Corporation
MJD31/31C Rev. A4
www.fairchildsemi.com
2
Typical Performance Characteristics
10
1000
IC = 10 IB
VCE = 2V
1
100
10
1
VBE(sat)
0.1
VCE(sat)
0.01
1E-3
0.01
0.1
1
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
tC = 10.IB
100
10
1
1
tR, VCC=30V
tR, VCC=10V
0.1
tD, VBE(off)=2V
0.1
1
10
100
0.01
0.1
1
10
VCB[V], COLLECTOR BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 3. Collector Capacitance
Figure 4. Turn On Time
10
tC = 10.IB
ICP(max)
IC(max)
tSTG
tF, VCC=30V
1
1
tF, VCC(off)=10V
0.1
0.1
0.01
0.01
0.1
1
10
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating
© 2012 Fairchild Semiconductor Corporation
MJD31/31C Rev. A4
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 7. Power Derating
© 2012 Fairchild Semiconductor Corporation
MJD31/31C Rev. A4
www.fairchildsemi.com
4
Physical Dimensions
D-PAK
Dimensions in Millimeters
© 2012 Fairchild Semiconductor Corporation
MJD31/31C Rev. A4
www.fairchildsemi.com
5
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Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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Obsolete
First Production
Full Production
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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