MBRAF1100T3G [ONSEMI]
Schottky Power Rectifier; 肖特基功率整流器
| 型号： | MBRAF1100T3G |
| 厂家： | 
ONSEMI |
| 描述： | Schottky Power Rectifier |
| 文件： | 总4页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRAF1100T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−artgeometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and polarity
protection diodes, in surface mount applications where compact size
and weight are critical to the system. These state−of−the−art devices
have the following features:
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
100 VOLTS
Features
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 V
• 150°C Operating Junction Temperature
• Guardring for Stress Protection
• This is a Pb−Free Device
SMA−FL
CASE 403AA
PLASTIC
STYLE 6
Mechanical Characteristics
MARKING DIAGRAM
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
AYWW
RADG
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 5000 Units per Reel
• Cathode Polarity Band
RAD
A
Y
= Device Code
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
RWM
R
V
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
V
100
Average Rectified Forward Current
T = 130°C
L
I
A
A
F(AV)
1.0
50
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
Operating Junction Temperature (Note 1)
Voltage Rate of Change
T
−65 to +150
°C
J
dv/dt
10
V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 0
MBRAF1100T3/D
MBRAF1100T3G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
25
90
°C/W
q
JL
R
JA
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Rating
Symbol
Value
Unit
V
Maximum Instantaneous Forward Voltage (Note 4) (i = 1.0 A, T = 25°C)
V
F
0.75
F
J
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, T = 25°C)
I
R
mA
0.5
5.0
J
(Rated dc Voltage, T = 100°C)
J
3. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
†
Device
Marking
Package
Shipping
MBRAF1100T3G
RAD
SMA−FL
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
TYPICAL ELECTRICAL CHARACTERISTICS
1 K
20
10
5
400
200
100
T = 150°C
J
T = 150°C
J
40
20
10
125°C
100°C
2
1
100°C
4
2
1
0.5
25°C
0.2
0.1
0.4
0.2
0.1
0.05
0.04
0.02
0.01
25°C
0.02
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
v , INSTANTANEOUS VOLTAGE (VOLTS)
1.1 1.2 1.3
0
10
20
30
40
50
V , REVERSE VOLTAGE (VOLTS)
60
70
80
90 100
F
R
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if V is sufficient below rated V .
R
R
280
260
240
220
200
180
160
140
120
100
80
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
60
40
20
0
0.1
0.2
0.5
1
2
5
10
V , REVERSE VOLTAGE (VOLTS)
20
50
100
R
Figure 3. Typical Capacitance
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2
MBRAF1100T3G
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 4. Typical Transient Thermal Response, Junction−to−Ambient
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3
MBRAF1100T3G
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA−01
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN
MAX
1.10
1.65
0.30
2.80
5.40
4.60
1.10
D
A
b
c
D
E
0.90
1.25
0.15
2.40
4.80
TOP VIEW
SIDE VIEW
E1 4.00
0.70
L
A
RECOMMENDED
SOLDER FOOTPRINT*
c
SEATING
PLANE
C
5.56
1.76
2X b
1.30
2X
L
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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MBRAF1100T3/D
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