MBRAF440 [ONSEMI]
Surface Mount Schottky Power Rectifier;型号: | MBRAF440 |
厂家: | ONSEMI |
描述: | Surface Mount Schottky Power Rectifier |
文件: | 总5页 (文件大小:75K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBRAF440, NRVBAF440
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
Features
4.0 AMPERE
40 VOLTS
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
SMA−FL
CASE 403AA
STYLE 6
• These are Pb−Free and Halide−Free Devices
MARKING DIAGRAM
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
RAF
AYWWG
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
RAF
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
†
Device
MBRAF440T3G
Package
Shipping
SMA−FL 5000 / Tape & Reel
(Pb−Free)
NRVBAF440T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
December, 2016 − Rev. 3
MBRAF440T3/D
MBRAF440, NRVBAF440
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
40
V
RRM
V
RWM
V
R
Average Rectified Forward Current
I
A
A
O
(At Rated V , T = 107°C)
4.0
R
L
Non−Repetitive Peak Surge Current
I
FSM
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
100
Storage/Operating Case Temperature
T
, T
−55 to +150
−55 to +150
°C
°C
stg
C
Operating Junction Temperature (Note 1)
T
J
Voltage Rate of Change
dv/dt
V/ms
(Rated V , T = 25°C)
10,000
R
J
ESD Rating
Human Body Model
Machine Model
ESD
ESD
3B
M4
−
HBM
MM
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Characteristic
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
R
25
90
°C/W
θ
JA
JL
R
θ
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
V
F
T = 25°C
T = 100°C
V
Maximum Instantaneous Forward Voltage (Note 3)
(I = 4.0 A)
F
J
J
0.485
0.435
Maximum Instantaneous Reverse Current
I
R
T = 25°C
J
T = 100°C
J
mA
0.3
15
(V = 40 V)
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
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2
MBRAF440, NRVBAF440
TYPICAL CHARACTERISTICS
10
10
1
1
T = 125°C
J
T = 125°C
J
T = 100°C
J
T = 25°C
T = −55°C
T = −55°C
T = 25°C
T = 100°C
J
J
J
J
J
0.1
0.10
0.1
0.10
0.20
0.30
0.40
0.50
0.60
0.20
0.30
0.40
0.50
0.60
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
F
V , MAXIMUM INSTANTANEOUS FORWARD
F
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100E−3
10E−3
1E−3
100E−3
10E−3
1E−3
T = 125°C
J
T = 125°C
J
T = 100°C
J
T = 100°C
J
100E−6
10E−6
1E−6
T = 25°C
J
T = 25°C
J
100E−6
10E−6
1E−6
100E−9
10E−9
T = −55°C
T = −55°C
J
J
1E−9
100E−12
0
10
20
30
40
0
10
20
30
40
V , REVERSE VOLTAGE (VOLTS)
R
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1000
T = 25 °C
J
SQUARE
WAVE
dc
I
pk
/I = p
O
I
pk
/I = 5
O
I
/I = 10
O
pk
I
pk
/I = 20
O
0
0
100
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
30
35
40
I , AVERAGE FORWARD CURRENT (AMPS)
O
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
Figure 5. Forward Power Dissipation
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3
MBRAF440, NRVBAF440
8
7
6
5
4
3
2
1
0
R
= 25 °C/W
q
JL
DC
SQUARE WAVE
0
20
40
60
80
100
120
140
T , LEAD TEMPERATURE (°C)
C
Figure 7. Current Derating
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
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4
MBRAF440, NRVBAF440
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE A
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN
MAX
1.10
1.65
0.30
2.80
5.40
4.60
1.10
D
A
b
c
D
E
0.90
1.25
0.15
2.40
4.80
TOP VIEW
SIDE VIEW
E1 4.00
0.70
L
A
RECOMMENDED
SOLDER FOOTPRINT*
c
SEATING
PLANE
C
5.56
1.76
2X b
1.30
2X
L
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
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◊
NBRAF440T3/D
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