MBRB100CT [SMC]

SCHOTTKY RECTIFIER;
MBRB100CT
型号: MBRB100CT
厂家: Sangdest Microelectronic (Nanjing) Co., Ltd    Sangdest Microelectronic (Nanjing) Co., Ltd
描述:

SCHOTTKY RECTIFIER

文件: 总6页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR1080/90/100CT  
MBRB1080/90/100CT  
MBR1080/90/100CT-1  
SANGDEST  
MICROELECTRONICS  
Technical Data  
Data Sheet N0735, Rev. -  
Green Products  
MBR1080/90/100CT MBRB1080/90/100CT MBR1080/90/100CT-1  
SCHOTTKY RECTIFIER  
Applications:  
Switching power supply  
Converters  
Free-Wheeling diodes  
Reverse battery protection  
Features:  
150 °C TJ operation  
Center tap configuration  
Low forward voltage drop  
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and  
moisture resistance  
High frequency operation  
Guard ring for enhanced ruggedness and long term reliability  
This is a Pb Free Device  
All SMC parts are traceable to the wafer lot  
Additional testing can be offered upon request  
Case styles  
MBR10…CT  
TO-220AB  
MBRB10…CT  
MBR10…CT-1  
TO-262  
D2PAK  
Mechanical Dimensions: In Inches / mm  
TO-220AB  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
MBR1080/90/100CT  
MBRB1080/90/100CT  
MBR1080/90/100CT-1  
SANGDEST  
MICROELECTRONICS  
Technical Data  
Data Sheet N0735, Rev. -  
Green Products  
Dimensions in  
millimeters  
Symbol  
Min. Typical Max.  
A
A1  
A2  
b
b1  
c
c1  
D
D1  
E
E1  
E2  
e
H
L
4.55  
0
4.70  
0.10  
2.69  
0.81  
1.27  
0.38  
1.27  
8.70  
4.85  
0.25  
2.89  
0.96  
2.59  
0.71  
0.36  
1.17  
8.55  
6.40  
10.01  
7.6  
0.61  
1.37  
8.85  
10.16  
10.31  
10.18  
9.98  
10.08  
2.54  
15.1  
2.30  
1.27  
14.6  
2.00  
1.17  
15.6  
2.70  
1.40  
2.20  
L1  
L2  
L3  
e
0.25BSC  
0
-
8°  
e1  
e2  
e3  
5°  
4°  
4°  
D2PAK  
TO-262  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
MBR1080/90/100CT  
MBRB1080/90/100CT  
MBR1080/90/100CT-1  
SANGDEST  
MICROELECTRONICS  
Technical Data  
Data Sheet N0735, Rev. -  
Green Products  
Marking Diagram:  
Where XXXXX is YYWWL  
MBR  
B
= Device Type  
= Package type  
10  
80  
= Forward Current (10A)  
= Reverse Voltage (80)  
CT/CT-1 = Configuration  
SSG  
YY  
= SSG  
= Year  
WW  
L
= Week  
= Lot Number  
MBR1080CT  
MBRB1080CT  
CautionsMolding resin  
Epoxy resin UL:94V-0  
Ordering Information:  
Device  
Package  
Shipping  
TO-220AB  
(Pb-Free)  
MBR1080CT  
50pcs / tube  
D²PAK  
(Pb-Free)  
MBRB1080CT  
800pcs / reel  
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specification.  
Maximum Ratings:  
Characteristics  
Symbol  
Condition  
Max.  
Units  
Peak Inverse Voltage  
VRWM  
-
80  
90  
MBR1080CT  
MBRB1080CT  
MBR1080CT-1  
MBR1090CT  
MBRB1090CT  
MBR1090CT-1  
V
100 MBR10100CT  
MBRB10100CT  
MBR10100CT-1  
5(Per leg)  
Max. Average Forward  
IF(AV)  
50% duty cycle @TC  
=100°C, rectangular wave  
form  
A
A
10(Per device)  
Max. Peak One Cycle Non-  
Repetitive Surge Current  
(per leg)  
IFSM  
8.3 ms, half Sine pulse  
120  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
MBR1080/90/100CT  
MBRB1080/90/100CT  
MBR1080/90/100CT-1  
SANGDEST  
MICROELECTRONICS  
Technical Data  
Data Sheet N0735, Rev. -  
Green Products  
Electrical Characteristics:  
Characteristics  
Max. Forward Voltage Drop  
(per leg) *  
Symbol  
Condition  
@ 3A, Pulse, TJ = 25 °C  
@ 5A, Pulse, TJ = 25 °C  
@ 3 A, Pulse, TJ = 125 °C  
@ 5 A, Pulse, TJ = 125 °C  
Max.  
0.78  
0.85  
Units  
V
VF1  
VF2  
IR1  
0.65  
0.75  
V
mA  
mA  
pF  
Max. Reverse Current (per  
leg) *  
@VR = rated V  
R
1.00  
TJ = 25 °C  
IR2  
@VR = rated V  
TJ = 125 °C  
R
15  
Max. Junction Capacitance  
(per leg)  
CT  
300  
@VR = 5V, TC = 25 °C  
SIG = 1MHz  
f
Typical Series Inductance  
(per leg)  
LS  
Measured lead to lead 5 mm from  
package body  
8.0  
nH  
Max. Voltage Rate of Change  
dv/dt  
-
10,000  
V/μs  
* Pulse Width < 300µs, Duty Cycle <2%  
Thermal-Mechanical Specifications:  
Characteristics  
Max. Junction Temperature  
Max. Storage Temperature  
Maximum Thermal  
Resistance Junction to Case  
(per leg)  
Maximum Thermal  
Resistance, Case to Heat  
Sink  
Symbol  
TJ  
Condition  
Specification  
-55 to +150  
-55 to +150  
2.0  
Units  
°C  
°C  
-
-
Tstg  
DC operation  
RθJC  
RθCS  
wt  
°C/W  
Mounting surface, smooth and  
0.50  
2
°C/W  
greased  
(only for TO-220)  
Approximate Weight  
Case Style  
-
g
TO-220AB D2PAK TO-262  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
MBR1080/90/100CT  
MBRB1080/90/100CT  
MBR1080/90/100CT-1  
SANGDEST  
MICROELECTRONICS  
Technical Data  
Data Sheet N0735, Rev. -  
Green Products  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  
MBR1080/90/100CT  
MBRB1080/90/100CT  
MBR1080/90/100CT-1  
SANGDEST  
MICROELECTRONICS  
Technical Data  
Data Sheet N0735, Rev. -  
Green Products  
DISCLAIMER:  
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product  
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales  
department for the latest version of the datasheet(s).  
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,  
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by  
means of users’ fail-safe precautions or other arrangement .  
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or  
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd  
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,  
products or circuits described in the datasheets.  
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any  
secondary damage resulting from use at a value exceeding the absolute maximum rating.  
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics  
(Nanjing) Co., Ltd.  
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC  
- Sangdest Microelectronics (Nanjing) Co., Ltd.  
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will  
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third  
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and  
regulations..  
Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 •  
FAX (86) 25-87123900 World Wide Web Site - http://www.sangdest.com.cn E-Mail Address - sales@ sangdest.com.cn •  

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