ISL9R30120G2 [ONSEMI]
30A，1200V，STEALTH™ 肖特基二极管;
| 型号： | ISL9R30120G2 |
| 厂家： | 
ONSEMI |
| 描述： | 30A，1200V，STEALTH™ 肖特基二极管 软恢复二极管 快速软恢复二极管 局域网 肖特基二极管 |
| 文件： | 总8页 (文件大小：5891K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTHt Diode
30 A, 1200 V
ISL9R30120G2
Description
The ISL9R30120G2 is a STEALTH diode optimized for low loss
performance in high frequency hard switched applications.
The STEALTH family exhibits low reverse recovery current (I
and exceptionally soft recovery under typical operating conditions.
)
RR
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This device is intended for use as a free wheeling or boost diode
in power supplies and other power switching applications. The low
I
and short ta phase reduce loss in switching transistors. The soft
RR
CATHODE
(BOTTOM SIDE
METAL)
recovery minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional snubber
circuitry. Consider using the STEALTH diode with an SMPS IGBT
to provide the most efficient and highest power density design at lower
cost.
ANODE
CATHODE
TO−247−2LD
CASE 340CL
Features
• Stealth Recovery t = 269 ns (@ I = 30 A)
rr
F
SYMBOL
• Max Forward Voltage, V = 3.3 V (@ T = 25°C)
F
C
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• This Device is Pb−Free and is RoHS Compliant
K
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
A
MARKING DIAGRAM
• SMPS FWD
• Snubber Diode
$Y&Z&3&K
R30120G2
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
R30120G2
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2020 − Rev. 3
ISL9R30120G2/D
ISL9R30120G2
DEVICE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Value
1200
1200
1200
30
Unit
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
Average Rectified Forward Current (T = 80°C)
I
A
C
F(AV)
Repetitive Peak Surge Current (20 kHz Square Wave)
Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
Power Dissipation
I
70
A
FRM
I
325
166
20
A
FSM
P
D
W
mJ
°C
Avalanche Energy (1 A, 40 mH)
E
AVL
Operating and Storage Temperature Range
T
T
−55 to
+175
J, STG
Maximum Temperature for Soldering
T
PKG
300
260
°C
°C
L
Leads at 0.063 in (1.6 mm) from Case for 10 s
T
Package Body for 10 s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Packing Method
Tape Width
Quantity
ISL9R30120G2
R30120G2
TO−247−2LD
Tube
N/A
30
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
R
0.75
30
q
JC
R
q
JA
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2
ISL9R30120G2
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
Instantaneous Reverse Current
I
R
V
R
=1200 V
T
T
= 25°C
−
−
−
−
100
1.0
mA
C
= 125°C
mA
C
On State Characteristics
Instantaneous Forward Voltage
V
F
I = 30 A
F
T
T
= 25°C
−
−
2.8
2.6
3.3
3.1
V
V
C
= 125°C
C
Dynamic Characteristics
Junction Capacitance
C
t
V
= 10 V, I = 0 A
−
115
−
pF
J
R
F
Switching Characteristics
Reverse Recovery Time
−
−
−
−
−
−
−
−
−
−
−
−
−
−
45
80
56
100
−
ns
ns
ns
A
I = 1 A, dI/dt = 100 A/ms, V = 15 V
F
rr
R
I = 30 A, dI/dt = 100 A/ms, V = 15 V
F
R
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
t
I
I = 30 A,
269
7.5
930
529
6.2
11
rr
F
dI /dt = 200 A/ms,
F
−
rr
V
= 780 V,
= 25°C
R
C
T
Q
−
nC
ns
−
rr
t
rr
I = 30 A,
−
F
dI /dt = 200 A/ms,
F
Softness Factor (t /t )
S
−
b
a
V
= 780 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
I
rr
−
A
Q
3.0
260
4.8
30
−
mC
ns
−
rr
t
rr
I = 30 A,
−
F
dI /dt = 1000 A/ms,
F
Softness Factor (t /t )
S
−
b
a
V
= 780 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
I
rr
−
A
Q
3.4
520
−
mC
A/ms
rr
Maximum di/dt During t
dI /dt
M
−
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
ISL9R30120G2
TYPICAL PERFORMANCE CURVES
60
1000
100
50
40
10
1
30
20
0.1
10
0
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
3
1.5
2
2.5
3.5
4
0.5
V , Reverse Voltage (kV)
R
V , Forward Voltage (V)
F
Figure 2. Reverse Current vs. Reverse Voltage
Figure 1. Forward Current vs. Forward Voltage
750
625
500
375
750
625
500
375
250
125
250
125
0
0
60
0
10
30
40
50
1200
20
200
400
600
800
1000
dI /dt, Current Rate of Change (A/ms)
F
I , Forward Current (A)
F
Figure 4. ta and tb Curves vs. dIF/dt
Figure 3. ta and tb Curves vs. Forward Current
40
30
40
35
30
25
20
20
10
0
15
10
30
0
10
20
40
50
60
200
400
600
800
1000
1200
I , Forward Current (A)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 6. Maximum Reverse Recovery Current
vs. dIF/dt
Figure 5. Maximum Reverse Recovery Current
vs. Forward Current
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4
ISL9R30120G2
TYPICAL PERFORMANCE CURVES (continued)
9
8
6.0
5.6
5.0
7
6
5
4
3
4.5
4.0
3.5
3.0
2.5
2.0
200
400
600
800
1000
1200
1200
200
400
600
800
1000
dI /dt, Current Rate of Change (A/ms)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 7. Reverse Recovery Softness Factor
vs. dIF/dt
Figure 8. Reverse Recovery Charge vs. dIF/dt
1600
−14
400
350
300
1400
1200
1000
800
−16
−18
−20
−22
600
400
200
0
250
200
100
0.03
0.1
1
10
25
50
75
100
150
125
V , Reverse Voltage (V)
R
T , Case Temperature (°C)
C
Figure 9. Junction Capacitance vs. Reverse
Voltage
Figure 10. Maximum Reverse Recovery Current
and trr vs. Case Temperature
80
60
40
20
0
50
75
125
150
175
25
100
T , Case Temperature (°C)
C
Figure 11. DC Current Derating Curve
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5
ISL9R30120G2
TYPICAL PERFORMANCE CURVES (continued)
1.0
0.1
0.01
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
dI
dt
2
F
t
rr
F
I
F
t
a
t
b
DUT CURRENT
SENSE
0
R
G
+
0.25 I
V
DD
RM
V
GE
−
MOSFET
t
I
1
RM
t
2
Figure 14. trr Waveforms and Definitions
Figure 13. trr Test Circuit
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
AVL
Q = IGBT (BV
DD
2
= 1/2LI [V
/(V
− V )]
R(AVL)
V
AVL
R(AVL)
R(AVL) DD
> DUT V
)
1
CES
R
L
+
V
I
L
CURRENT
SENSE
I
L
DD
I V
Q
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 16. Avalanche Current and Voltage
Waveforms
Figure 15. Avalanche Energy Test Circuit
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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