ISL9R3060G2 [FAIRCHILD]
30A, 600V Stealth⑩ Diode; 30A ， 600V隐形™二极管
| 型号： | ISL9R3060G2 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30A, 600V Stealth⑩ Diode |
| 文件： | 总6页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2004
ISL9R3060G2, ISL9R3060P2
30A, 600V Stealth™ Diode
General Description
Features
•
•
•
•
•
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . .t / t > 1.2
b a
The ISL9R3060G2 and ISL9R3060P2 are Stealth™
diodes optimized for low loss performance in high
frequency hard switched applications. The Stealth™ family
Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t < 35ns
rr
o
Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 C
exhibits low reverse recovery current (I
exceptionally soft recovery under typical operating
conditions.
) and
RRM
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
Applications
applications. The low I
and short t phase reduce loss
RRM
a
•
•
•
•
•
•
Switch Mode Power Supplies
Hard Switched PFC Boost Diode
UPS Free Wheeling Diode
Motor Drive FWD
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
snubber circuitry. Consider using the Stealth™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Formerly developmental type TA49411.
SMPS FWD
Snubber Diode
Package
Symbol
CATHODE
(FLANGE)
JEDEC STYLE 2 LEAD TO-247
JEDEC TO-220AC
ANODE
K
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
A
CATHODE
ANODE
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Ratings
600
Units
V
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RRM
RWM
V
600
V
V
600
V
R
I
Average Rectified Forward Current
30
A
F(AV)
I
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
70
A
FRM
I
325
A
FSM
P
200
W
mJ
°C
D
E
Avalanche Energy (1A, 40mH)
20
AVL
T , T
Operating and Storage Temperature Range
-55 to 175
J
STG
T
Maximum Temperature for Soldering
L
T
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
PKG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
Package Marking and Ordering Information
Device Marking
R3060G2
Device
Package
TO-247
Tape Width
Quantity
ISL9R3060G2
ISL9R3060P2
-
-
-
-
R3060P2
TO-220AC
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off State Characteristics
I
Instantaneous Reverse Current
V
= 600V
T
T
= 25°C
-
-
-
-
100
1.0
µA
R
R
C
C
= 125°C
mA
On State Characteristics
V
Instantaneous Forward Voltage
I = 30A
T
T
= 25°C
-
-
2.1
1.7
2.4
2.1
V
V
F
F
C
C
= 125°C
Dynamic Characteristics
C
Junction Capacitance
V
= 10V, I = 0A
-
120
-
pF
J
R
F
Switching Characteristics
t
Reverse Recovery Time
I
I
I
= 1A, d /dt = 100A/µs, V = 30V
-
-
-
-
-
-
-
-
-
-
-
-
27
36
35
45
-
ns
ns
ns
A
rr
F
F
F
IF
R
= 30A, d /dt = 100A/µs, V = 30V
IF
R
t
Reverse Recovery Time
= 30A,
36
rr
d /dt = 200A/µs,
V
I
I
I
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
IF
2.9
55
-
RRM
= 390V, T = 25°C
C
R
Q
-
nC
ns
RR
t
I
= 30A,
F
110
1.9
6
-
rr
d /dt = 200A/µs,
V
T
S
Softness Factor (t /t )
IF
-
b
a
= 390V,
= 125°C
R
C
Maximum Reverse Recovery Current
Reverse Recovery Charge
-
A
RRM
Q
450
60
-
nC
ns
RR
t
Reverse Recovery Time
I
= 30A,
F
-
rr
d /dt = 1000A/µs,
V
T
S
Softness Factor (t /t )
IF
1.25
21
-
b
a
= 390V,
= 125°C
R
C
Maximum Reverse Recovery Current
Reverse Recovery Charge
-
A
RRM
Q
730
800
-
nC
RR
dI /dt
Maximum di/dt during t
-
-
A/µs
M
b
Thermal Characteristics
R
R
R
Thermal Resistance Junction to Case
-
-
-
-
-
-
0.75 °C/W
θJC
θJA
θJA
Thermal Resistance Junction to Ambient TO-247
Thermal Resistance Junction to Ambient TO-220
30
62
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
Typical Performance Curves
60
5000
1000
o
175 C
o
175 C
50
o
150 C
o
o
25 C
150 C
o
125 C
40
100
10
1
o
o
125 C
100 C
30
20
o
75 C
o
100 C
10
0
o
25 C
0.1
100
200
300
, REVERSE VOLTAGE (V)
R
400
500
600
0
0.5
1.0
1.5
2.0
2.5
3.0
V , FORWARD VOLTAGE (V)
V
F
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
100
120
V
= 390V, T = 125°C
J
R
V
= 390V, T = 125°C
J
R
90
80
70
60
50
40
30
20
10
0
t
AT dI /dt = 200A/µs, 500A/µs, 800A/µs
F
b
100
80
60
40
20
0
t
AT I = 60A, 30A, 15A
F
b
t
AT dI /dt = 200A/µs, 500A/µs, 800A/µs
F
a
t
AT I = 60A, 30A, 15A
F
a
0
10
20
30
40
50
60
200
400
600
800
1000
1200
1400
1600
I , FORWARD CURRENT (A)
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 3. t and t Curves vs Forward Current
Figure 4. t and t Curves vs dI /dt
a
b
a
b
F
20
18
16
14
12
10
8
30
25
20
15
10
V
= 390V, T = 125°C
J
R
dI /dt = 800A/µs
F
I
= 60A
V
= 390V, T = 125°C
J
F
R
I
= 30A
F
I
= 15A
F
dI /dt = 500A/µs
F
dI /dt = 200A/µs
F
5
0
6
4
200
400
600
800
1000
1200
1400
1600
0
10
20
30
40
50
60
I , FORWARD CURRENT (A)
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI /dt
F
©2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
Typical Performance Curves (Continued)
1200
1000
800
2.5
V
= 390V, T = 125°C
J
R
I
= 60A
V
= 390V, T = 125°C
J
F
I
= 60A
R
F
I
= 30A
F
2.0
1.5
1.0
0.5
I
= 30A
= 15A
F
600
I
= 15A
F
I
F
400
200
200
400
600
800
1000
1200
1400
1600
200
400
600
800
1000
1200
1400
1600
dI /dt, CURRENT RATE OF CHANGE (A/µs)
dIF/dt, CURRENT RATE OF CHANGE (A/µs)
F
Figure 7. Reverse Recovery Softness Factor vs
dI /dt
Figure 8. Reverse Recovery Charge vs dI /dt
F
F
1000
800
600
400
200
0
0.1
1
10
100
V
, REVERSE VOLTAGE (V)
R
Figure 9. Junction Capacitance vs Reverse Voltage
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1.0
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
10-4
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
0.01
10-5
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
Figure 10. Normalized Maximum Transient Thermal Impedance
©2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
Test Circuit and Waveforms
V
AMPLITUDE AND
CONTROL dIF/dt
GE
R
G
L
t
AND t CONTROL I
2 F
1
dI
F
t
rr
I
F
dt
t
t
b
a
DUT
CURRENT
SENSE
0
R
G
+
-
0.25 I
VDD
RM
V
GE
MOSFET
t
I
RM
1
t
2
Figure 11. t Test Circuit
Figure 12. t Waveforms and Definitions
rr
rr
I = 1A
L = 40mH
R < 0.1Ω
V
= 50V
DD
EAVL = 1/2LI2 [V
Q1 = IGBT (BV
/(V
- V )]
R(AVL)
R(AVL) DD
V
> DUT V
)
AVL
CES
R(AVL)
L
R
+
V
CURRENT
SENSE
DD
I
I
L
L
Q1
I
V
V
-
DD
DUT
t0
t1
t2
t
Figure 13. Avalanche Energy Test Circuit
Figure 14. Avalanche Current and Voltage
Waveforms
©2004 Fairchild Semiconductor Corporation
ISL9R3060G2, ISL9R3060P2 Rev. C3
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerSaver™
PowerTrench
QFET
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
QS™
QT Optoelectronics™ TinyLogic
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TINYOPTO™
TruTranslation™
UHC™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
UltraFET
FACT Quiet Series™
SILENT SWITCHER VCX™
SMART START™
SPM™
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
Across the board. Around the world.™
The Power Franchise
ProgrammableActive Droop™
Stealth™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
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