ISL9R3060G2-F085 [ONSEMI]
600V，30A，2.0V，TO-247（2 引线）Stealth™ 整流器;
| 型号： | ISL9R3060G2-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 600V，30A，2.0V，TO-247（2 引线）Stealth™ 整流器 |
| 文件： | 总7页 (文件大小：377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTHEꢀRectifier
30 A, 600 V
ISL9R3060G2-F085
Description
The ISL9R3060G2−F085 is STEALTH diode optimized for low
loss performance in high frequency hard switched applications. The
STEALTH family exhibits low reverse recovery current (I
) and
RRM
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exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in
power supplies and other power switching applications. The low I
RRM
and short t phase reduce loss in switching transistors. The soft
a
recovery minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional snubber
circuitry. Consider using the STEALTH diode with an SMPS IGBT to
provide the most efficient and highest power density design at lower
cost.
1
2
1. Cathode 2. Anode
Features
• High Speed Switching (t = 31 ns(Typ.) @ I = 30 A)
rr
F
• Low Forward Voltage (V = 2.4 V(Max.) @ I = 30 A)
F
F
• Avalanche Energy Rated
• AEC−Q101 Qualified and PPAP Capable
TO−247−2LD
CASE 340CL
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING DIAGRAM
Applications
• Automotive DCDC converter
• Automotive On Board Charger
• Switching Power Supply
• Power Switching Circuits
$Y&Z&3&K
R3060G2
$Y
= ON Semiconductor Logo
&Z
&3
&K
R3060G2
= Assembly Plant Code
= Date Code (Year & Week)
= Lot Traceability Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
March, 2020 − Rev. 7
ISL9R3060G2−F085/D
ISL9R3060G2−F085
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
C
Symbol
VRRM
VRWM
VR
Parameter
Ratings
600
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
A
600
600
Average Rectified Forward Current
@ TC = 125_C
IF(AV)
30
IFSM
EAVL
Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
325
20
A
Avalanche Energy (1 A, 40 mH)
mJ
_C
TJ, TSTG
Operating Junction and Storage Temperature
−55 to +175
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Max
0.58
45
Units
°C/W
°C/W
RθJC
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
RθJA
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Tube
Quantity
R3060G2
ISL9R3060G2−F085
TO−247
−
30
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min.
−
Typ.
−
Max
100
2
Units
mA
mA
V
I
R
Instantaneous Reverse Current
V
= 600 V
T = 25°C
C
R
T
C
= 175°C
−
−
1
V
FM
Instantaneous Forward Voltage
Reverse Recovery Time
I = 30 A
F
T = 25°C
C
−
2.0
1.5
23
2.4
2.2
35
T
= 175°C
= 25°C
C
−
V
C
2
t
rr
T
−
ns
I = 1 A, di/dt = 200 A/ms,
F
V
CC
= 390 V
I = 30 A, di/dt = 200 A/ms,
CC
T
= 25°C
= 175°C
−
31
135
45
−
ns
ns
F
C
C
V
= 390 V
T
t
Reverse Recovery Time
I = 30 A, di/dt = 200 A/ms,
CC
T = 25°C
C
−
−
−
18
13
48
−
−
−
ns
ns
a
b
rr
F
V
t
= 390 V
Q
Reverse Recovery Charge
Avalanche Energy
nC
E
AVL
I
AV
=1.0 A, L = 40 mH
20
−
−
mJ
1. Pulse: Test Pulse width = 300 ms, Duty Cycle = 2%.
2. Guaranteed by design.
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2
ISL9R3060G2−F085
TEST CIRCUIT WAVEFORMS
Figure 1. Test Circuit Waveforms
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3
ISL9R3060G2−F085
TYPICAL PERFORMANCE CHARACTERISTICS
1000
100
10
400
100
T
= 175°C
= 125°C
C
T
C
= 175°C
T
C
10
1
1
0.1
T
= 125°C
C
T
C
= 25°C
T
C
= 25°C
0.01
1E−3
0.1
0
100
200
300
400
500
600
0.1
1
2
3
4
5
Forward Voltage, V [V]
F
Reverse Voltage, V [V]
R
Figure 2. Typical Forward Voltage Drop
vs. Forward Current
Figure 3. Typical Reverse Current vs.
Reverse Voltage
600
400
200
0
200
150
100
50
Typical Capacitance
at 10 V = 91 pF
I
= 30 A
F
T
C
= 175°C
T
C
= 125°C
T
C
= 25°C
0
100
0.1
1
10
100
400
500
200
300
di/dt [A/ms]
Reverse Voltage, V [V]
R
Figure 4. Typical Junction Capacitance
Figure 5. Typical Reverse Recovery Time
vs. di/dt
20
15
10
5
40
I
F
= 30 A
T
C
= 175°C
30
20
10
0
T
= 125°C
C
T
C
= 25°C
0
100
400
500
200
300
25
50
75
100
125
150
175
Case temperature, T [°C]
di/dt [A/ms]
C
Figure 6. Typical Reverse Recovery
Current vs. di/dt
Figure 7. Forward Current Derating Curve
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4
ISL9R3060G2−F085
1000
750
500
250
0
I
= 30 A
F
T
C
= 175°C
T
C
= 125°C
T
C
= 25°C
100
200
300
400
500
di/dt [A/ms]
Figure 8. Reverse Recovery Charge
1
0.1
D=0.5
0.2
0.1
0.05
0.02
P
DM
0.01
single pulse
0.01
t1
t2
1. Z
(t) = 0.58°C/W Typ.
thJC
2. Duty Factor, D = t1/t2
3. T − T = P × Z
(t)
thJC
JM
C
DM
0.001
10−5
10−4
10−3
10−2
10−1
100
101
102
t , Square Wave Pulse Duration [sec]
1
Figure 9. Transient Thermal Response Curve
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
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