HN2D02FUTW1T1 [ONSEMI]
Ultra High Speed Switching Diodes; 超高速开关二极管
| 型号： | HN2D02FUTW1T1 |
| 厂家： | 
ONSEMI |
| 描述： | Ultra High Speed Switching Diodes |
| 文件： | 总4页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HN2D02FUTW1T1
Ultra High Speed
Switching Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−88 package which is designed for low power surface mount
applications.
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• Fast t , < 3.0 ns
rr
• Low C , < 2.0 pF
D
6
5
• Available in 8 mm Tape and Reel
4
Use HN2D02FUTW1T1 to order the 7 inch/3000 unit reel.
1
2
3
MAXIMUM RATINGS (T = 25°C)
A
SC−88
CASE 419B
Rating
Reverse Voltage
Symbol
Value
80
Unit
V
R
Peak Reverse Voltage
Forward Current
V
85
RM
6
5
4
I
100
240
1.0
mAdc
mAdc
mAdc
F
Peak Forward Current
I
FM
Peak Forward Surge Current (10 ms)
I
FSM
(Note 1)
THERMAL CHARACTERISTICS
Rating
Symbol
Max
300
Unit
mW
°C
1
2
3
Power Dissipation
P
D
Junction Temperature
Storage Temperature
1. t = 10 ms
T
J
150
T
stg
−55 to +150
°C
MARKING DIAGRAM
2. This is maximum rating for a single diode. Derate by 75 percent when
using 2 or 3 diodes.
R7
M
R7 = for Specified
Device Code
M = Date Code
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
HN2D02FUTW1T1/D
January, 2004 − Rev. 1
HN2D02FUTW1T1
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Symbol
Condition
Min
—
Max
0.1
0.1
1.2
—
Unit
Reverse Voltage Leakage Current
I
R
V
= 35 V
= 75 V
mAdc
R
R
V
—
Forward Voltage
V
I = 100 mA
F
—
Vdc
Vdc
pF
F
R
D
Reverse Breakdown Voltage
Diode Capacitance
V
C
I
R
= 100 mA
80
—
V
R
= 0, f = 1.0 MHz
2.0
3.0
Reverse Recovery Time (Figure 1)
t
(Note 3)
I = 10 mA, V = 6.0 V,
—
ns
rr
F
R
R = 100 W, I = 0.1 I
R
L
rr
3. t Test Circuit
rr
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
t
r
t
p
t
rr
I
F
t
t
10%
R
L
I = 0.1 I
rr
A
R
90%
I = 10 mA
F
V
= 6 V
R
V
R
R = 100 W
L
t = 2 ms
p
t = 0.35 ns
r
Figure 1. Reverse Recovery Time Equivalent Test Circuit
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2
HN2D02FUTW1T1
100
10
10
T = 150°C
A
T = 125°C
A
1.0
T = 85°C
A
T = 85°C
A
0.1
0.01
T = 25°C
A
1.0
T = 55°C
A
T = −ꢂ40°C
A
T = 25°C
A
0.1
0.2
0.001
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
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3
HN2D02FUTW1T1
PACKAGE DIMENSIONS
SC−88 (SOT−363)
CASE 419B−02
ISSUE N
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
G
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD
419B−02.
INCHES
DIM MIN MAX
MILLIMETERS
6
1
5
4
3
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
A
B
C
D
G
H
J
K
N
S
0.071 0.087
0.045 0.053
0.031 0.043
0.004 0.012
0.026 BSC
−−− 0.004
0.004 0.010
0.004 0.012
0.008 REF
S
−B−
2
0.65 BSC
−−−
0.10
0.10
0.10
0.25
0.30
M
M
B
0.2 (0.008)
D6 PL
0.20 REF
0.079 0.087
2.00
2.20
N
J
C
K
H
ON Semiconductor and
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HN2D02FUTW1T1/D
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