HN2E04F [TOSHIBA]
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application; 多芯片分立器件超高速开关应用
| 型号： | HN2E04F |
| 厂家： | 
TOSHIBA |
| 描述： | MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application |
| 文件： | 总8页 (文件大小：523K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HN2E04F
TOSHIBA MULTI CHIP DISCRETE DEVICE
HN2E04F
Super High Speed Switching Application
Audio Frequency Amplifier Application
Audio Low Noise Amplifier Application
Unit: mm
Q1
High Voltage
:V = −120V
CEO
High DC Current Gain
: h =200~700
FE
Good h
:h I = −0.1mA)/ h I = −2mA) =0.95
FE( C FE( C
FE Linearity
Q2
Low Forward Voltage Drop
Fast Reverse Recovery Time
Low Total Capacitance
:V )=0.98V(typ.)
F(3
:t =1.6ns(typ.)
rr
:C =0.5pF(typ.)
T
Q1 (Transistor)
Q2 (Transistor)
:
:
2SA1587 equivalent
1SS352 equivalent
1.NC
2.Emitter
3.Cathode
4.Anode
5.Collector
6.Base
Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Rating
−120
−120
−5
Unit
V
JEDEC
JEITA
―
V
CBO
V
CEO
V
EBO
―
V
TOSHIBA
2-3N1E
V
Weight:0.015g (typ.)
I
−100
−20
mA
mA
C
Base current
I
B
Q1 (Diode) Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Maximum (peak) reverse voltage
Reverse voltage
Symbol
Rating
85
Unit
V
V
RM
V
80
V
R
Maximum (peak) forward current
Average forward current
Surge current (10ms)
I
300
100
1
mA
mA
A
FM
I
O
I
FSM
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
P *
Rating
Unit
Collector power dissipation
Junction temperature
300
125
mW
°C
C
T
j
Storage temperature range
T
stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
*Total rating: Power dissipation per element should not exceed 200mW per element.
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HN2E04F
Q1 (Transistor) Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
= −120V, I = 0
Min
Typ.
Max
Unit
Collector cut-off current
Emitter cut-off current
I
―
V
V
V
―
―
―
―
―
―
100
4
−100
−100
700
−0.3
―
nA
nA
CBO
CB
EB
CE
E
I
―
= −5V, I = 0
C
EBO
DC current gain
h
*
FE
―
=− 6V, I = −2mA
200
―
C
Collector-emitter saturation voltage
Transition Frequency
V
―
I
C
=−10mA, I =−1mA
V
CE(sat)
B
f
―
V
V
V
= −6V, I =−1mA
―
MHz
pF
T
CE
CB
CE
C
Collector Output Capacitance
C
―
=−10V, I = 0,f=1MHz
―
―
ob
E
= −6 V, I = −0.1 mA
C
Noise figure
NF
―
―
1.0
―
dB
f = 1 kHz,R = 10 kΩ
g
*: hFE Classifications GR(G):200~400 , BL(L):350~700
(
)Marking Symbol
Q2 (Diode) Electrical Characteristics (Ta = 25°C)
Test
Circuit
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
V
V
V
V
―
I
I
I
= 1mA
―
―
―
―
―
―
―
0.62
0.75
0.98
―
―
―
F (1)
F (2)
F (3)
R (1)
R (2)
F
F
F
Forward voltage
―
= 10mA
―
= 100mA
1.20
0.1
0.5
―
I
I
―
V
V
V
= 30V
R
R
R
Reverse current
μA
―
= 80V
―
Total capacitance
C
T
―
= 0, f = 1MHz
0.5
1.6
pF
ns
Reverse recovery time
t
―
I
= 10mA (fig.1)
F
―
rr
Marking
Equivalent Circuit (Top View)
Type Name
6
5
4
h
RANK
FE
Q1
1
32G
Q2
2
3
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HN2E04F
Fig. 1: Reverse Recovery Time (trr) Test Circuit
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2007-11-22
HN2E04F
Q1
I
– V
I – V
C BE
C
CE
−5
−4
−3
−2
−1
0
−30
−25
−20
−15
−10
−5
COMMON EMITTER
−10
−9
COMMON EMITTER
= −6 V
Ta = 25°C
V
CE
−8
−7
−6
−5
Ta = 100°C
25
−25
−4
−3
−2
I
= −1 μA
B
0
0
0
0
−2
−4
−6
−8
−10
−0.2
−0.4
−0.6
−0.8
−1.0
COLLECTOR EMITTER VOLTAGE
V
CE
(V)
BASE-EMITTER VOLTAGE
V
BE
(V)
h
– I
C
C
ob
– V
CB
FE
10
5000
3000
I
= 0
E
COMMON EMITTER
= −6 V
f = 1 MHz
Ta = 25°C
5
3
V
CE
1000
Ta = 100°C
500
300
25
−25
1
−1
−3
−10
−30
−100
100
−0.1
COLLECTOR-BASE VOLTAGE
V
(V)
CB
−0.3
−1
−3
−10
−30
COLLECTOR CURRENT
I
C
(mA)
V
– I
C
CE (sat)
−1
COMMON EMITTER
/I = 10
−0.5
−0.3
I
C B
Ta = 100°C
−0.1
25
−25
−0.05
−0.03
−0.01
−0.1
−0.3
−1
−3
−10
−30
COLLECTOR CURRENT
I
C
(mA)
4
2007-11-22
HN2E04F
5
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HN2E04F
Q2
6
2007-11-22
HN2E04F
Q1, Q2 Common
P * – Ta
C
500
400
300
200
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta (°C)
*Total Rating.
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HN2E04F
RESTRICTIONS ON PRODUCT USE
20070701-EN GENERAL
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from
its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third
parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
8
2007-11-22
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