HN2E05J [TOSHIBA]

MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application; 多芯片分立器件超高速开关应用
HN2E05J
型号: HN2E05J
厂家: TOSHIBA    TOSHIBA
描述:

MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
多芯片分立器件超高速开关应用

晶体 开关 小信号双极晶体管 光电二极管
文件: 总6页 (文件大小:251K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
HN2E05J  
TOSHIBA MULTI CHIP DISCRETE DEVICE  
HN2E05J  
Super High Speed Switching Application  
Interface Circuit  
Unit: mm  
Driver Circuit Applications  
Q1  
Since bias resistor is built in the transistor, the miniaturization of  
the apparatus by curtailment of the number of parts and laborsaving of  
an assembly are possible.  
Q2  
Low Forward Voltage Drop  
Fast Reverse Recovery Time  
Low Total Capacitance  
:V )=0.98V(typ.)  
F(3  
:t =1.6ns(typ.)  
rr  
:C =0.5pF(typ.)  
T
1.BASE  
2.EMITTER  
3.ANODE  
4.CATHODE  
5.COLLECTOR  
Q1(Transistor)  
Q2(Transistor)  
:
:
RN2104F equivalent  
1SS352 equivalent  
SMV  
Q1(Transistor) Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
JEDEC  
JEITA  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
TOSHIBA  
2-3L1E  
10  
V
Weight:0.014g (typ.)  
I
100  
mA  
C
Q2(Diode) Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Maximum (peak) reverse voltage  
Reverse voltage  
V
85  
80  
V
V
RM  
V
R
Maximum (peak) forward current  
Average forward current  
Surge current (10ms)  
I
200  
100  
1
mA  
mA  
A
FM  
I
O
I
FSM  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector power dissipation  
Junction temperature  
Symbol  
P *  
Rating  
300  
Unit  
mW  
°C  
C
T
j
150  
Storage temperature range  
T
stg  
55~150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if  
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
* Total rating. 200mW per 1 element must not be exceeded.  
1
2007-11-01  
HN2E05J  
Q1(Transistor) Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= −50 V, I = 0  
Min  
Typ.  
Max  
Unit  
I
I
V
V
V
V
100  
500  
0.15  
CBO  
CEO  
CB  
CE  
EB  
CE  
E
Collector cut-off current  
nA  
= −50 V, I = 0  
B
Emitter cut-off current  
DC current gain  
I
= −10 V, I = 0  
0.082  
80  
mA  
EBO  
C
h
= −5 V, I = −10 mA  
FE  
CE (sat)  
C
Collector-emitter saturation voltage  
Input voltage (ON)  
V
I
= −5 mA, I = −0.25 mA  
0.1  
0.3  
5.0  
1.5  
V
V
C
B
V
V
V
V
V
= −0.2 V, I = −5 mA  
1.5  
1.0  
I (ON)  
CE  
CE  
CE  
CB  
C
Input voltage (OFF)  
Transition frequency  
Collector output capacitance  
Input resistor  
V
= −5 V, I = −0.1 mA  
V
I (OFF)  
C
f
= −10 V, I = −5 mA  
200  
3
MHz  
pF  
kΩ  
T
C
C
= −10 V, I = 0, f = 1 MHz  
ob  
E
R1  
R1/R2  
32.9  
0.9  
47  
1.0  
61.1  
1.1  
Resistor ratio  
Q2(Diode) Electrical Characteristics (Ta = 25°C)  
Test  
Circuit  
Characteristic  
Symbol  
Test Condition  
= 1mA  
Min  
Typ.  
Max  
Unit  
V
V
V
V
I
I
I
0.62  
0.75  
0.98  
F (1)  
F (2)  
F (3)  
R (1)  
R (2)  
F
F
F
Forward voltage  
= 10mA  
= 100mA  
1.20  
0.1  
0.5  
I
I
V
V
V
= 30V  
R
R
R
Reverse current  
μA  
= 80V  
Total capacitance  
C
T
= 0, f = 1MHz  
0.5  
1.6  
pF  
ns  
Reverse recovery time  
t
I
= 10mA (fig.1)  
F
rr  
Marking  
Equivalent Circuit (Top View)  
5
4
54  
Q1  
Q2  
1
2
3
Fig.1 : Reverse Recovery Time (trr) Test Circuit  
2
2007-11-01  
HN2E05J  
Q1  
3
2007-11-01  
HN2E05J  
Q2  
4
2007-11-01  
HN2E05J  
Q1,Q2 Common  
P * Ta  
C
500  
400  
300  
200  
100  
0
0
25  
50  
75  
100  
125  
150  
175  
AMBIENT TEMPERATURE Ta (°C)  
*Total Rating.  
5
2007-11-01  
HN2E05J  
RESTRICTIONS ON PRODUCT USE  
20070701-EN GENERAL  
The information contained herein is subject to change without notice.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety  
in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such  
TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
The information contained herein is presented only as a guide for the applications of our products. No responsibility  
is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from  
its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third  
parties.  
Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
6
2007-11-01  

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