HGTP5N120BND [ONSEMI]
1200V，NPT IGBT;
| 型号： | HGTP5N120BND |
| 厂家： | 
ONSEMI |
| 描述： | 1200V，NPT IGBT 局域网 电动机控制 栅 瞄准线 双极性晶体管 |
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HGTG5N120BND, HGTP5N120BND
Data Sheet
May 2003
21A, 1200V, NPT Series N-Channel IGBTs
with Anti-Parallel Hyperfast Diodes
Features
o
• 21A, 1200V, T = 25 C
C
The HGTG5N120BND and HGTP5N120BND are Non-
Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The IGBT used is the development type
TA49308. The Diode used is the development type TA49058
(Part number RHRD6120).
• 1200V Switching SOA Capability
o
• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
Temperature Compensating SABER™ Model
www.fairchildsemi.com
• Related Literature
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
Formerly Developmental Type TA49306.
E
C
Ordering Information
COLLECTOR
(FLANGE)
G
PART NUMBER
HGTG5N120BND
HGTP5N120BND
PACKAGE
TO-247
TO-220AB
BRAND
5N120BND
5N120BND
NOTE: When ordering, use the entire part number. i.e.,
HGTG5N120BND.
JEDEC TO-220AB (ALTERNATE VERSION)
Symbol
C
COLLECTOR
(FLANGE)
E
C
G
G
E
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTG5N120BND
HGTP5N120BND
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
21
10
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
40
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
o
±30
Switching Safe Operating Area at T = 150 C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
30A at 1200V
167
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
o
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
8
C
L
o
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
pkg
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
µs
µs
GE
SC
SC
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
15
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 840V, T = 125 C, R = 25Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 250µA, V = 0V
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
1200
-
-
CES
C
GE
o
I
V
= 1200V
T
= 25 C
-
-
250
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
100
-
o
= 150 C
-
1.5
2.7
4.2
-
o
Collector to Emitter Saturation Voltage
V
I
= 5A,
= 15V
= 25 C
-
2.45
3.7
6.8
-
CE(SAT)
C
V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 45µA, V = V
CE GE
6.0
-
V
GE(TH)
C
I
V
= ±20V
±250
-
nA
A
GES
GE
o
SSOA
T = 150 C, R = 25Ω, V
= 15V,
30
-
J
G
GE
= 1200V
L = 5mH, V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 5A, V
= 600V
CE
-
-
-
-
-
-
-
-
-
10.5
53
-
V
GEP
C
Q
= 5A,
V
V
= 15V
65
nC
nC
ns
ns
ns
ns
µJ
µJ
G(ON)
C
GE
V
= 600V
CE
= 20V
o
60
72
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C,
22
25
d(ON)I
J
I
= 5A,
CE
t
15
20
rI
V
V
R
= 960V,
= 15V,
CE
Current Turn-Off Delay Time
Current Fall Time
t
GE
160
130
450
390
180
160
600
450
d(OFF)I
= 25Ω,
G
t
fI
L = 5mH,
Test Circuit (Figure 20)
Turn-On Energy
E
ON
Turn-Off Energy (Note 3)
E
OFF
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
20
MAX
25
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 150 C,
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= 5A,
CE
t
15
20
ns
rI
V
V
= 960V,
= 15V,
CE
Current Turn-Off Delay Time
Current Fall Time
t
GE
182
175
1000
560
2.70
50
280
200
1300
800
3.50
65
ns
d(OFF)I
R
= 25Ω,
G
t
ns
fI
L = 5mH,
Test Circuit (Figure 20)
Turn-On Energy
E
µJ
ON
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
E
µJ
OFF
V
I
I
I
= 10A
V
EC
EC
EC
EC
t
= 7A, dl /dt = 200A/µs
EC
ns
rr
= 1A, dl /dt = 200A/µs
EC
30
40
ns
o
Thermal Resistance Junction To Case
NOTE:
R
IGBT
-
0.75
1.75
C/W
θJC
o
Diode
-
C/W
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
CE
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
25
20
15
10
5
35
30
25
20
15
10
5
o
V
= 15V
T
= 150 C, R = 25Ω, V = 15V, L = 5mH
GE
GE
J
G
0
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
40
80
70
60
50
40
30
20
o
o
V
= 840V, R = 25Ω, T = 125 C
G J
CE
T
= 150 C, R = 25Ω, L = 5mH,
V
G
= 960V
J
CE
200
100
50
o
T
= 75 C, V = 15V
T
GE
C
V
35
30
25
20
15
10
C
GE
IDEAL DIODE
I
o
SC
15V
12V
75 C
o
75 C
f
f
= 0.05 / (t
d(OFF)I
+ t
)
MAX1
d(ON)I
+ E )
OFF
t
SC
= (P - P ) / (E
MAX2
D
C
ON
P
= CONDUCTION DISSIPATION
T
V
15V
12V
C
C
GE
10
o
(DUTY FACTOR = 50%)
110 C
110 C
o
o
R
= 0.75 C/W, SEE NOTES
ØJC
10
11
12
13
14
15
2
4
6
8
10
V
, GATE TO EMITTER VOLTAGE (V)
GE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
30
30
25
20
15
10
5
DUTY CYCLE <0.5%, V
GE
PULSE DURATION = 250µs
= 12V
25
20
15
10
5
o
= 25 C
o
o
= -55 C
o
T
T
= 150 C
T
C
C
T
= -55 C
C
C
o
T
= 25 C
C
o
T
= 150 C
C
DUTY CYCLE <0.5%, V
= 15V
PULSE DURATION = 250µs
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
3000
900
R
= 25Ω, L = 5mH, V
= 960V
CE
R
= 25Ω, L = 5mH, V
= 960V
CE
G
G
800
700
600
500
400
300
200
2500
2000
1500
1000
500
o
T
= 150 C, V
= 12V, V
= 15V
J
GE
GE
o
T
= 150 C, V
= 12V OR 15V
J
GE
o
T
= 25 C, V = 12V OR 15V
GE
J
o
T
= 25 C, V
= 12V, V
8
= 15V
9
J
GE
7
GE
0
2
3
4
5
6
10
2
3
4
5
6
7
8
9
10
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
40
35
30
25
20
40
35
30
25
20
15
R
= 25Ω, L = 5mH, V = 960V
CE
R
J
= 25Ω, L = 5mH, V = 960V
CE
G
G
o
o
T
= 25 C, T = 150 C, V
= 12V
GE
J
o
o
T
= 25 C, T = 150 C, V
= 12V
GE
J
J
15
10
0
o
o
o
o
T
= 25 C, T = 150 C, V
= 15V
J
J
GE
T
= 25 C, T = 150 C, V
= 15V
7
J
J
GE
2
3
4
5
6
7
8
9
10
2
3
4
5
6
8
9
10
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
250
250
R
= 25Ω, L = 5mH, V
= 960V
G
CE
R
= 25Ω, L = 5mH, V
= 960V
CE
G
225
200
175
150
125
100
o
V
= 12V, V = 15V, T = 150 C
GE J
GE
200
150
o
T
= 150 C, V
= 12V OR 15V
J
GE
o
= 25 C, V
100
50
T
= 12V OR 15V
GE
J
o
= 15V, T = 25 C
V
= 12V, V
GE
GE
J
2
3
I
4
5
6
7
8
9
10
2
3
4
5
6
7
8
9
10
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
16
80
o
I
= 1mA, R = 120Ω, T = 25 C
G(REF)
L
C
DUTY CYCLE <0.5%, V
PULSE DURATION = 250µs
= 20V
CE
14
12
10
8
70
V
= 1200V
CE
60
50
40
30
20
10
0
V
= 800V
CE
V
= 400V
o
CE
T
o
= 25 C
C
6
4
o
T
= 150 C
T
= -55 C
C
C
2
0
0
10
20
30
40
50
60
7
8
9
10
11
12
13
14
15
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
Typical Performance Curves Unless Otherwise Specified (Continued)
10
8
2.0
1.5
1.0
0.5
0
o
DUTY CYCLE < 0.5%, T = 110 C
C
PULSE DURATION = 250µs
FREQUENCY = 1MHz
6
C
IES
V
= 15V
GE
V
= 10V
GE
4
2
C
OES
C
RES
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
10
0.5
0.2
0.1
-1
10
0.05
0.02
t
1
P
D
DUTY FACTOR, D = t / t
1
2
0.01
-5
SINGLE PULSE
t
2
PEAK T = (P x Z
x R
) + T
θJC C
J
D
θJC
-2
10
10
-4
-3
10
-2
-1
10
0
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
100
10
1
60
o
= 25 C, dl
T
/ dt = 200A/µs
EC
C
50
40
30
20
10
0
t
rr
o
150 C
t
a
o
25 C
t
b
o
-55 C
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
V , FORWARD VOLTAGE (V)
I , FORWARD CURRENT (A)
F
F
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
HGTG5N120BND, HGTP5N120BND
Test Circuit and Waveforms
HGTG5N120BND
90%
OFF
10%
ON
V
GE
E
L = 2mH
E
V
CE
R
= 25Ω
G
90%
+
-
10%
t
d(OFF)I
I
CE
V
= 960V
DD
t
rI
t
fI
t
d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in the
handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
Operating frequency information for a typical device (Figure 3)
is presented as a guide for estimating device performance for
a specific application. Other typical frequency vs collector
current (I ) plots are possible using the information shown
CE
for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating
frequency plot (Figure 3) of a typical device shows f
or
MAX1
; whichever is smaller at each point. The information is
f
MAX2
based on measurements of a typical device and is bounded
by the maximum rated junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions are
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such as
“ECCOSORBD™ LD26” or equivalent.
possible. t
and t are defined in Figure 19. Device
d(OFF)I
d(ON)I
turn-off delay can establish an additional frequency limiting
condition for an application other than T . t is
JM d(OFF)I
2. When devices are removed by hand from their carriers, the
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
important when controlling output ripple under a lightly loaded
condition.
3. Tips of soldering irons should be grounded.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
The sum of device switching and conduction losses must
.
4. Devices should never be inserted into or removed from
circuits with power on.
D
D
JM θJC
C
5. Gate Voltage Rating - Never exceed the gate-voltage
not exceed P . A 50% duty factor was used (Figure 3) and
D
rating of V
. Exceeding the rated V can result in
the conduction losses (P ) are approximated by
C
GEM
GE
permanent damage to the oxide layer in the gate region.
P
= (V
x I )/2.
C
CE
CE
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup on
the input capacitor due to leakage currents or pickup.
E
and E
OFF
are defined in the switching waveforms shown
is the integral of the instantaneous power
ON
in Figure 21. E
loss (I x V ) during turn-on and E
instantaneous power loss (I x V ) during turn-off. All tail
ON
is the integral of the
CE CE OFF
CE CE
losses are included in the calculation for E
OFF
; i.e., the
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
collector current equals zero (I = 0).
CE
protection is required an external Zener is recommended.
©2003 Fairchild Semiconductor Corporation
HGTG5N120BND, HGTP5N120BND, Rev. B1
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