HGTP5N120CN [INTERSIL]
25A, 1200V, NPT Series N-Channel IGBT; 25A ， 1200V ，不扩散核武器条约系列N沟道IGBT
| 型号： | HGTP5N120CN |
| 厂家： | 
Intersil |
| 描述： | 25A, 1200V, NPT Series N-Channel IGBT |
| 文件： | 总7页 (文件大小：83K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HGTP5N120CN, HGT1S5N120CNS
Data Sheet
January 2000
File Number 4596.2
25A, 1200V, NPT Series N-Channel IGBT
Features
o
The HGTP5N120CN and HGT1S5N120CNS are Non-Punch
Through (NPT) IGBT designs. They are new members of the
MOS gated high voltage switching IGBT family. IGBTs
combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a
MOSFET and the low on-state conduction loss of a bipolar
transistor.
• 25A, 1200V, T = 25 C
C
• 1200V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . . . . . . 350ns at T = 150 C
J
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model
www.intersil.com
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Formerly Developmental Type TA49309.
Ordering Information
Packaging
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
G5N120CN
G5N120CN
JEDEC TO-220AB ALTERNATE VERSION
HGTP5N120CN
E
C
G
HGT1S5N120CNS
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in Tape and Reel, i.e.,
HGT1S5N120CNS9A.
Symbol
C
JEDEC TO-263AB
G
COLLECTOR
(FLANGE)
G
E
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
1
HGTP5N120CN, HGT1S5N120CNS
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
HGTP5N120CN
HGT1S5N120CNS
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
1200
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
25
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
12
40
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA
J
30A at 1200V
167
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.33
W/ C
C
Forward Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
36
mJ
AV
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
o
Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
300
260
8
C
L
o
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
pkg
Short Circuit Withstand Time (Note 2) at V
Short Circuit Withstand Time (Note 2) at V
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
µs
µs
GE
SC
SC
= 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
15
GE
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
o
2. V
= 840V, T = 125 C, R = 25Ω.
J G
CE(PK)
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
= 0V
1200
-
-
-
CES
ECS
C
C
GE
= 10mA, V
= 0V
15
-
250
-
V
GE
o
I
V
= BV
CES
T
= 25 C
-
-
-
µA
µA
mA
V
CES
CE
C
C
C
C
C
o
T
T
T
T
= 125 C
100
-
o
= 150 C
-
2
o
Collector to Emitter Saturation Voltage
V
I
V
= 5.5A,
C
= 25 C
-
2.1
2.9
7.0
-
2.4
3.5
-
CE(SAT)
= 15V
GE
o
= 150 C
-
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 45µA, V = V
CE GE
6.0
-
V
GE(TH)
C
I
V
= ±20V
±250
-
nA
A
GES
GE
o
SSOA
T = 150 C, R = 25Ω, V
= 15V,
25
-
J
G
GE
L = 200µH, V
= 1200V
CE(PK)
Gate to Emitter Plateau Voltage
On-State Gate Charge
V
I
I
= 5.5A, V
= 5.5A,
= 0.5 BV
CE CES
-
-
-
10.6
45
-
V
GEP
C
C
Q
V
= 15V
55
75
nC
nC
G(ON)
GE
V
= 0.5 BV
CES
CE
V
= 20V
60
GE
2
HGTP5N120CN, HGT1S5N120CNS
o
Electrical Specifications
PARAMETER
T = 25 C, Unless Otherwise Specified (Continued)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
22
MAX
30
UNITS
ns
o
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
d(ON)I
J
I
= 5.5A
CE
t
12
16
ns
rI
d(OFF)I
V
= 0.8 BV
= 15V
CE
CES
V
GE
Current Turn-Off Delay Time
Current Fall Time
t
180
280
220
400
640
20
250
350
-
ns
R
= 25Ω
G
L = 5mH
Test Circuit (Figure 18)
t
ns
fI
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 4)
Current Turn-On Delay Time
Current Rise Time
E
E
E
µJ
ON1
ON2
OFF
500
700
25
µJ
µJ
o
t
IGBT and Diode at T = 150 C
ns
d(ON)I
J
I
= 5.5A
CE
t
12
16
ns
rI
V
= 0.8 BV
= 15V
CE
CES
V
GE
Current Turn-Off Delay Time
Current Fall Time
t
225
350
220
1
300
400
-
ns
d(OFF)I
R
= 25Ω
G
L = 5mH
Test Circuit (Figure 18)
t
ns
fI
Turn-On Energy (Note 3)
Turn-On Energy (Note 3)
Turn-Off Energy (Note 4)
E
E
E
µJ
ON1
ON2
OFF
1.2
1.1
0.75
mJ
mJ
1
o
Thermal Resistance Junction To Case
NOTES:
R
-
C/W
θJC
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 18.
4. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
35
25
o
= 150 C, R = 25Ω, V = 15V, L = 200µH
GE
T
V
= 15V
J
G
GE
30
25
20
15
10
5
20
15
10
5
0
0
25
50
75
100
125
150
0
200
400
600
800
1000
1200
1400
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
3
HGTP5N120CN, HGT1S5N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
200
70
60
50
40
30
20
35
30
25
20
15
10
o
T
= 150 C, R = 25Ω, L = 5mH, V
= 960V
T
C
o
V
J
G
CE
GE
V
= 840V, R = 25Ω, T = 125 C
CE
G
J
o
15V
75 C
o
75 C 12V
100
50
o
I
110 C 15V
SC
o
110 C 12V
o
T
= 75 C, V
= 5V
C
GE
IDEAL DIODE
f
f
= 0.05 / (t
d(OFF)I
+ t
)
MAX1
d(ON)I
= (P - P ) / (E
+ E
)
OFF
MAX2
D
C
ON2
20
10
P
= CONDUCTION DISSIPATION
C
t
(DUTY FACTOR = 50%)
o
SC
R
= 0.75 C/W, SEE NOTES
ØJC
1
2
3
5
10
10
11
12
13
14
15
I
, COLLECTOR TO EMITTER CURRENT (A)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
80
70
60
50
40
30
20
10
0
35
DUTY CYCLE < 0.5%, V
250µs PULSE TEST
= 15V
GE
DUTY CYCLE < 0.5%, V
250µs PULSE TEST
= 12V
GE
30
25
20
15
10
5
o
o
T
= -55 C
T = 150 C
C
o
C
T
= -55 C
C
o
T
= 150 C
C
o
T
= 25 C
C
o
T
= 25 C
C
0
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1750
3000
R
= 25Ω, L = 5mH, V
= 960V
CE
G
R
T
= 25Ω, L = 5mH, V
= 960V
CE
G
1500
1250
1000
750
500
250
0
2500
2000
1500
1000
500
o
T
= 150 C, V
= 12V OR 15V
o
J
GE
= 150 , V
= 15V, V = 12V
GE
J
GE
o
T
= 25 C, V = 12V OR 15V
GE
J
o
T
= 25 C, V
= 15V, V
8
= 12V
9
J
GE
7
GE
0
1
2
3
4
5
6
7
8
9
10
2
3
4
5
6
10
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
4
HGTP5N120CN, HGT1S5N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
40
R
= 25Ω, L = 5mH, V = 960V
CE
G
R
= 25Ω, L = 5mH, V
= 960V
CE
G
35
30
25
20
15
10
0
35
30
25
20
15
o
o
T
= 25 C, T = 150 C, V = 12V
GE
J
J
o
= 25 C, T = 150 C, V = 12V
GE
o
T
J
J
J
o
o
o
o
T
= 25 C, T = 150 C, V
GE
= 15V
9
T
3
= 25 C, T = 150 C, V
GE
= 15V
7
J
J
J
2
3
4
5
6
7
8
10
2
4
5
6
8
9
10
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
600
900
R
= 25Ω, L = 5mH, V
= 960V
CE
R
= 25Ω, L = 5mH, V
= 960V
CE
G
G
800
700
600
500
400
300
200
100
500
400
300
200
100
0
o
= 150 C, V
T
= 12V, V = 15V
GE
J
GE
o
T
= 150 C, V = 12V AND 15V
GE
J
o
T
= 25 C, V = 12V AND 15V
J
GE
o
T
= 25 C, V
GE
= 12V, V
GE
= 15V
6
J
1
2
3
4
5
6
7
8
9
10
1
2
3
4
5
7
8
9
10
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
16
14
100
o
= 25 C
DUTY CYCLE < 0.5%, V
250µs PULSE TEST
= 20V
T
CE
C
90
80
70
60
50
40
30
20
10
0
V
= 1200V
CE
12
10
8
o
= -55 C
T
C
V
= 800V
V
= 400V
CE
CE
o
T
= 150 C
C
6
4
2
o
I
= 1mA, R = 120Ω, T = 25 C
L C
G(REF)
0
6
7
8
9
10
11
12
13
14
15
16
0
10
20
30
40
50
60
V
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
5
HGTP5N120CN, HGT1S5N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
2.0
7
FREQUENCY = 1MHz
o
DUTY CYCLE < 0.5%, T = 110 C
C
250µs PULSE TEST
6
5
4
3
2
1
0
V
= 15V
GE
1.5
C
IES
V
= 10V
GE
1.0
0.5
C
OES
C
RES
0
0
5
10
15
20
25
0
0.5
V
1.0
1.5
2.0
2.5
3.0
3.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
0
10
0.50
0.20
0.10
-1
10
0.05
0.02
t
1
P
D
0.01
DUTY FACTOR, D = t / t
1
2
t
PEAK T = (P X Z
θJC
X R ) + T
θJC C
SINGLE PULSE
2
J
D
-2
10
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRD4120
90%
OFF
10%
ON2
V
GE
E
E
L = 5mH
V
CE
R
= 25Ω
G
90%
10%
d(OFF)I
+
I
CE
t
t
V
= 960V
rI
DD
t
-
fI
t
d(ON)I
FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 19. SWITCHING TEST WAVEFORMS
6
HGTP5N120CN, HGT1S5N120CNS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gate-
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
MAX1
= 0.05/(t ).
+ t
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
are possible. t
and t
are defined in Figure 19.
d(OFF)I
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T . t
JM d(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
is important when controlling output ripple under a lightly
loaded condition.
f
is defined by f
MAX2
= (P - P )/(E
OFF
+ E ). The
ON2
MAX2
D
C
3. Tips of soldering irons should be grounded.
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
4. Devices should never be inserted into or removed from
circuits with power on.
The sum of device switching and conduction losses must
not exceed P . A 50% duty factor was used (Figure 3) and
D
5. Gate Voltage Rating - Never exceed the gate-voltage
the conduction losses (P ) are approximated by
C
rating of V
. Exceeding the rated V can result in
GEM
GE
P
= (V
x I )/2.
CE
C
CE
permanent damage to the oxide layer in the gate region.
E
and E
are defined in the switching waveforms
OFF
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate open-
circuited or floating should be avoided. These conditions
can result in turn-on of the device due to voltage buildup
on the input capacitor due to leakage currents or pickup.
ON2
shown in Figure 19. E
instantaneous power loss (I
is the integral of the
ON2
x V ) during turn-on and
CE
CE
is the integral of the instantaneous power loss
E
OFF
(I
x V ) during turn-off. All tail losses are included in the
CE
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
calculation for E
; i.e., the collector current equals zero
OFF
(I
= 0).
CE
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
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