HGTP7N60A4 [ONSEMI]
IGBT，600V，SMPS;
| 型号： | HGTP7N60A4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，SMPS 双极性晶体管 |
| 文件： | 总9页 (文件大小：305K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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HGT1S7N60A4S9A, HGTG7N60A4
HGTP7N60A4
Data Sheet
September 2004
600V, SMPS Series N-Channel IGBT
Features
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4
are MOS gated high voltage switching devices combining
the best features of MOSFETs and bipolar transistors. These
devices have the high input impedance of a MOSFET and
the low on-state conduction loss of a bipolar transistor. The
much lower on-state voltage drop varies only moderately
• >100kHz Operation at 390V, 7A
• 200kHz Operation at 390V, 5A
• 600V Switching SOA Capability
o
• Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at T = 125 C
J
o
o
• Low Conduction Loss
between 25 C and 150 C.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49331.
Ordering Information
Symbol
PART NUMBER
HGT1S7N60A4S9A
HGTG7N60A4
PACKAGE
BRAND
G7N60A4
C
TO-263AB
TO-247
G7N60A4
G7N60A4
HGTP7N60A4
TO-220AB
G
NOTE: When ordering, use the entire part number.
E
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
E
C
G
E
C
G
COLLECTOR
(FLANGE)
COLLECTOR
(BOTTOM SIDE METAL)
JEDEC TO-263AB
COLLECTOR
(FLANGE)
G
E
Publication Order Number:
©2004 Semiconductor Components Industries, LLC.
HGTP7N60A4/D
November-2017, Rev. 2
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
ALL TYPES
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
600
V
CES
Collector Current Continuous
o
At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
34
14
A
A
A
V
V
C25
o
At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
56
CM
GES
GEM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
o
±30
Switching Safe Operating Area at T = 150 C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA
J
35A at 600V
25mJ at 7A
125
o
Single Pulse Avalanche Energy at T = 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
C
AS
o
Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
W
D
o
o
Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.0
W/ C
C
o
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
PKG
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
J
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
-
UNITS
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
= 250µA, V
GE
= 0V
= 0V
600
-
CES
ECS
C
= -10mA, V
GE
20
-
-
-
V
C
o
I
V
= 600V
T = 25 C
J
-
-
250
2
µA
mA
V
CES
CE
o
T = 125 C
J
-
o
Collector to Emitter Saturation Voltage
V
I
= 7A,
T = 25 C
J
-
1.9
1.6
5.9
-
2.7
2.2
7.0
±250
-
CE(SAT)
C
V
= 15V
o
GE
T = 125 C
-
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250µA, V = 600V
CE
4.5
-
V
GE(TH)
C
I
V
= ±20V
nA
A
GES
GE
o
SSOA
T = 150 C, R = 25Ω, V
= 15V
35
-
J
G
GE
L = 100µH, V = 600V
CE
Pulsed Avalanche Energy
Gate to Emitter Plateau Voltage
On-State Gate Charge
E
I
I
I
= 7A, L = 500µH
25
-
-
-
-
mJ
V
AS
CE
V
= 7A, V
CE
= 300V
9.0
37
GEP
C
C
Q
= 7A,
= 300V
V
V
= 15V
-
45
60
-
nC
nC
ns
ns
ns
ns
µJ
µJ
µJ
g(ON)
GE
V
CE
= 20V
o
-
48
GE
Current Turn-On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25 C
-
11
d(ON)I
J
I
= 7A
CE
t
-
11
-
rI
V
V
R
= 390V
= 15V
CE
GE
Current Turn-Off Delay Time
Current Fall Time
t
-
100
45
-
d(OFF)I
= 25Ω
G
t
-
-
fI
L = 1mH
Test Circuit (Figure 20)
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
E
E
E
-
55
-
ON1
ON2
OFF
-
120
60
150
75
-
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2
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
o
Electrical Specifications T = 25 C, Unless Otherwise Specified (Continued)
J
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
TEST CONDITIONS
MIN
TYP
10
MAX
-
UNITS
ns
o
t
IGBT and Diode at T = 125 C
-
-
-
-
-
-
-
-
d(ON)I
J
I
V
V
= 7A
CE
t
7
-
ns
rI
= 390V
= 15V
CE
GE
= 25Ω
Current Turn-Off Delay Time
Current Fall Time
t
130
75
150
85
-
ns
d(OFF)I
R
G
t
ns
fI
L = 1mH
Turn-On Energy (Note 2)
Turn-On Energy (Note 2)
Turn-Off Energy (Note 3)
E
E
E
50
µJ
Test Circuit (Figure 20)
ON1
ON2
OFF
200
125
-
215
170
1.0
µJ
µJ
o
Thermal Resistance Junction To Case
NOTES:
R
C/W
θJC
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
is the turn-on loss of the IGBT only. E
ON2
ON1
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified in
J
Figure 20.
3. Turn-Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
OFF
at the point where the collector current equals zero (I
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
CE
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
40
30
20
10
0
35
30
25
20
15
10
5
o
T
= 150 C, R = 25Ω, V = 15V, L = 100µH
GE
J
G
V
= 15V
GE
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
o
T
, CASE TEMPERATURE ( C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
500
T
V
16
14
12
10
8
140
120
100
80
C
o
GE
o
V
= 390V, R = 25Ω, T = 125 C
G J
CE
75 C
15V
200
100
I
SC
f
f
P
= 0.05 / (t
d(OFF)I
+ t
)
MAX1
MAX2
d(ON)I
+ E
= (P - P ) / (E
)
D
C
ON2
OFF
= CONDUCTION DISSIPATION
60
C
(DUTY FACTOR = 50%)
o
R
= 1.0 C/W, SEE NOTES
o
ØJC
t
6
40
SC
T
= 125 C, R = 25Ω, L = 2mH, V
= 390V
CE
J
G
30
1
5
10
20
4
20
10
11
12
13
14
15
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
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3
HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
30
25
20
15
10
5
30
25
20
15
10
5
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250µs
= 12V
DUTY CYCLE < 0.5%, V
= 15V
GE
GE
PULSE DURATION = 250µs
o
T
= 125 C
J
o
T
= 125 C
J
o
T
= 25 C
J
o
T
= 150 C
o
o
J
T
= 150 C
T = 25 C
J
J
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
500
350
R
= 25Ω, L = 1mH, V
= 390V
CE
G
R
= 25Ω, L = 1mH, V
= 390V
CE
G
300
250
200
150
100
50
400
300
200
100
0
o
T
= 125 C, V
= 12V, V
= 15V
J
GE
GE
o
T
= 125 C, V
= 12V OR 15V
J
GE
o
o
T
= 25 C, V
= 12V, V
= 15V
GE
J
GE
T
= 25 C, V
= 12V OR 15V
J
GE
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
16
40
R
= 25Ω, L = 1mH, V
= 390V
CE
G
R
= 25Ω, L = 1mH, V
= 390V
G
CE
o
T
= 25 C, V = 12V
GE
J
o
T
= 25 C, V
= 12V, V = 15V
J
GE GE
o
30
20
10
0
14
12
10
8
T
= 125 C, V
= 12V
J
GE
o
T
= 25 C, V
GE
= 15V
J
o
= 125 C, V
T
= 15V
GE
J
o
T
= 125 C, V
= 12V, V
= 15V
J
GE
GE
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
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HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
180
160
140
120
100
80
90
80
70
60
50
40
30
20
R
= 25Ω, L = 1mH,
V
= 390V
G
CE
R
= 25Ω, L = 1mH, V
= 390V
CE
G
o
o
V
= 15V, T = 125 C
J
GE
T
= 125 C, V
= 12V OR 15V
J
GE
o
V
= 12V, T = 125 C
J
GE
o
o
T
= 25 C, V
= 12V OR 15V
J
GE
V
= 15V, T = 25 C
J
GE
o
V
= 12V, T = 25 C
GE
J
60
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
I
, COLLECTOR TO EMITTER CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
CE
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
120
15
o
I
= 1mA, R = 43Ω, T = 25 C
DUTY CYCLE < 0.5%, V
= 10V
G(REF)
L
J
CE
PULSE DURATION = 250µs
100
80
60
40
20
0
V
= 600V
12
9
CE
o
T
= 25 C
J
V
= 400V
CE
o
o
T
= 125 C
T
= -55 C
J
J
V
= 200V
CE
6
3
0
7
8
9
10
11
12
13
14
15
0
5
10
15
Q , GATE CHARGE (nC)
G
20
25
30
35
40
V
, GATE TO EMITTER VOLTAGE (V)
GE
FIGURE 13. TRANSFER CHARACTERISTIC
FIGURE 14. GATE CHARGE WAVEFORMS
800
600
400
200
0
10
o
R
= 25Ω, L = 1mH, V
= 390V, V = 15V
GE
T
= 125 C, L = 1mH, V
= 390V, V = 15V
GE
G
CE
+ E
ON2 OFF
J
CE
E
= E
E
= E
+ E
ON2 OFF
TOTAL
TOTAL
I
= 14A
= 7A
CE
I
= 14A
CE
1
I
I
CE
I
I
= 7A
CE
= 3.5A
CE
= 3.5A
CE
0.1
10
25
50
75
100
125
150
100
R , GATE RESISTANCE (Ω)
G
1000
o
T
, CASE TEMPERATURE ( C)
C
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
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HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
2.8
2.6
2.4
2.2
2.0
1.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
o
DUTY CYCLE < 0.5%, T = 25 C
J
PULSE DURATION = 250µs,
FREQUENCY = 1MHz
C
C
IES
I
= 14A
CE
I
I
= 7A
CE
OES
20
= 3.5A
CE
C
RES
0
40
60
80
100
9
10
11
12
13
14
15
16
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
0
10
0.5
0.2
0.1
t
1
-1
10
P
0.05
D
t
0.02
0.01
2
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R
) + T
θJC C
J
D
θJC
SINGLE PULSE
-2
10
-5
-4
-3
10
-2
-1
0
1
10
10
10
t , RECTANGULAR PULSE DURATION (s)
10
10
10
1
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
RHRP660
90%
OFF
10%
V
GE
E
ON2
E
L = 1mH
V
CE
R
= 25Ω
G
90%
10%
d(OFF)I
+
I
CE
t
t
V
= 390V
rI
DD
t
fI
-
t
d(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 21. SWITCHING TEST WAVEFORMS
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HGT1S7N60A4S9A, HGTG7N60A4, HGTP7N60A4
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
is defined by f
= 0.05/(t ).
+ t
MAX1
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD LD26” or equivalent.
of the on-state time for a 50% duty factor. Other definitions
are possible. t
d(OFF)I
and t are defined in Figure 21.
d(ON)I
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
.
JM
+ E
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
f
is defined by f
= (P - P )/(E
OFF
). The
ON2
MAX2
MAX2
D
C
allowable dissipation (P ) is defined by P = (T - T )/R
.
D
D
JM θJC
C
The sum of device switching and conduction losses must
3. Tips of soldering irons should be grounded.
not exceed P . A 50% duty factor was used (Figure 3) and
D
4. Devices should never be inserted into or removed from
circuits with power on.
the conduction losses (P ) are approximated by
C
P
= (V
CE
x I )/2.
CE
C
5. Gate Voltage Rating - Never exceed the gate-voltage
E
and E
OFF
are defined in the switching waveforms
rating of V
. Exceeding the rated V can result in
ON2
GEM
GE
permanent damage to the oxide layer in the gate region.
shown in Figure 21. E
is the integral of the
ON2
instantaneous power loss (I
x V ) during turn-on and
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
CE
CE
E
is the integral of the instantaneous power loss
OFF
(I
x V ) during turn-off. All tail losses are included in the
CE
CE
calculation for E
; i.e., the collector current equals zero
OFF
(I
= 0).
CE
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
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