FJAFS1510ATU_技术文档

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November 2012

FJAFS1510A

ESBC™ Rated NPN Power Transistor

Applications

Description

• High-Voltage and High-Speed Power Switches

The FJAFS1510A is a low-cost, high-performance power

switch designed to provide optimal performance when

used in an ESBC™ configuration in applications such as:

power supplies, motor drivers, smart grid, or ignition

switches. The power switch is designed to operate up to

1550 volts and up to 6amps, while providing exceptionally

low on-resistance and very low switching losses.

• Emitter-Switched Bipolar/MOSFET Cascodes

(ESBC™)

• Smart Meters, Smart Breakers, SMPS,

HV Industrial Power Supplies

• Motor Drivers and Ignition Drivers

The ESBC™ switch is designed to be driven using off-

the-shelf power supply controllers or drivers. The

ESBC™ MOSFET is a low-voltage, low-cost, surface-

mount device that combines low-input capacitance and

fast switching. The ESBC™ configuration further mini-

mizes the required driving power because it does not

have Miller capacitance.

ESBC Features (FDC655 MOSFET)

V_CS(ON)

I_C

Equiv. R_CS(ON)

0.426 V

6 A

0.071 Ω⁽¹⁾

• Low Equivalent On Resistance

• Very Fast Switch: 150 kHz

• Avalanche Rated

The FJAFS1510A provides exceptional reliability and a

large operating range due to its square Reverse-Bias-

Safe-Operating-Area (RBSOA) and rugged design. The

device is avalanche rated and has no parasitic transistors

so is not prone to static dv/dt failures.

• Low Driving Capacitance, No Miller Capacitance

• Low Switching Losses

• Reliable HV switch: No False Triggering due to

High dv/dt Transients

The power switch is manufactured using a dedicated

high-voltage bipolar process and is packaged in a high-

voltage TO-3PF package.

C

2

C

E

FJAFS1510A

FDC655

B

G

1

B

3

TO-3PF

1

S

1.Base 2.Collector 3.Emitter

Figure 3. ESBC Configuration⁽²⁾

Figure 1. Pin Configuration

Figure 2. Internal Schematic Diagram

Ordering Information

Part Number

FJAFS1510ATU

Marking

J1510A

Package

TO-3PF

Packing Method

TUBE

Remarks

Notes:

1. Figure of Merit.

2. Other Fairchild MOSFETs can be used in this ESBC application.

www.fairchildsemi.com

FJAFS1510A Rev. A2

1

Absolute Maximum Ratings⁽³⁾

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only.

Values are at T_A= 25°C unless otherwise noted.

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

1550

Unit

V

Collector-Emitter Voltage

750

V

Emitter-Base Voltage

6

V

Collector Current (DC)

6

A

P_C

Collector Dissipation (T_C= 25°C)

Operating and Junction Temperature Range

Storage Temperature Range

60

W

°C

T_J

-55 to +125

-55 to +150

T_STG

Notes:

3. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.

Thermal Characteristics

Values are at T_A= 25°C unless otherwise noted.

Symbol

Parameter

Max.

Unit

R_θjC

Thermal Resistance, Junction to Case

2.08

°C/W

Electrical Characteristics

Values are at T_A= 25°C unless otherwise noted.

Symbol

I_CES

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Test Conditions

V_CB= 1400 V, R_BE= 0

Min.

Typ.

Max. Unit

100

10

μA

V

I_CBO

V_CB= 800 V, I_E= 0

V_EB= 4 V, I_C= 0

I_EBO

100

BV_EBOBase-Emitter Breakdown Voltage I_E= 500 μA, I_C= 0

h_FE1

6

15

7

DC Current Gain

V_CE= 5 V, I_C= 0.5 A

h_FE2

DC Current Gain

V_CE= 5 V, I_C= 3 A

V_CE(sat) Collector-Emitter Saturation

Voltage

I_C= 6 A, I_B= 1.5 A, T_A= 125°C

0.5

27

V

C_ob

Output Capacitance

V_CB= 200 V, I_E= 0, f = 1 MHz

pF

FJAFS1510A Rev. A2

www.fairchildsemi.com

2

ESBC Configured Electrical Characteristics⁽⁴⁾

Values are at T_A= 25°C unless otherwise noted.

Symbol

Parameter

Current Gain Bandwidth

Product

Test Conditions

I_C= 0.1 A, V_CE= 10 V

Min.

Typ.

15.4

Max. Unit

f_T

MHz

It_f

t_s

Inductive Current Fall Time

Inductive Storage Time

115

670

160

95

ns

V

V_GS= 10 V, R_G= 47 Ω,

_Clamp= 500 V,

V

Vt_f

Vt_r

t_c

Inductive Voltage Fall Time I_C=1 A, I_B= 0.1 A, h_FE= 10,

L_C= 1 mH,

SRF = 350 kHz

Inductive Voltage Rise Time

Inductive Crossover Time

Inductive Current Fall Time

Inductive Storage Time

130

12.5

1100

68

It_f

V_GS= 10 V, R_G= 47 Ω,

V_Clamp= 500 V,

t_s

Vt_f

Vt_r

t_c

Inductive Voltage Fall Time I_C= 5 A, I_B= 1 A, h_FE= 5,

L_C= 1 mH,

SRF = 350 kHz

Inductive Voltage Rise Time

Inductive Crossover Time

110

150

h_FE= 5, I_C= 6 A

V_CSWMaximum Collector Source

Voltage at Turn-off without

Snubber

1550

V_GS= ±20 V

I_GS(OS)Gate-Source Leakage

Current

1.0

nA

V_GS= 10 V, I_C= 6 A, I_B= 2 A, h_FE= 3

V_CS(ON)Collector-Source On

Voltage

0.426

0.213

0.162

0.141

1.9

V

_GS= 10 V, I_C= 4 A, I_B= 1.3 A, h_FE= 3

V_GS= 10 V, I_C= 2 A, I_B= 0.67 A, h_FE= 3

_GS= 10 V, I_C= 1 A, I_B= 0.2 A, h_FE= 5

V

V_BS= V_GS,I_B= 250 μA

V_GS(th)Gate Threshold Voltage

V

V_CS= 25 V, f = 1 MHz

C_iss

Input Capacitance

(V_GS=V_CB=0)

470

pF

V_GS= 10 V, I_C= 6 A, V_CS= 25 V

V_GS= 10 V, I_D= 6.3 A

Q_GS(tot)Gate-Source Charge V_CB=0

9

nC

mΩ

r_DS(ON)Static Drain to Source

On Resistance

21

30

26

V_GS= 10 V, I_D= 6.3 A, T_A= 125°C

V_GS= 4.5 V, I_D= 5.5 A

Notes:

4. Used typical FDC655 MOSFET specifications in table. Table could vary if other Fairchild MOSFETs are used.

FJAFS1510A Rev. A2

www.fairchildsemi.com

3

Typical Performance Characteristics

100

10

1

10

I_B=2.0A

V_CE= 5V

T_A= 125⁰C

T_A= - 25⁰C

8

T_A= 25⁰C

6

I_B=0.6A

I_B=0.4A

4

2

0

I_B=0.2A

0.1

1

10

100

0

2

4

6

8

10

12

14

I_C[A], COLLECTOR CURRENT

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 4. Static Characteristic

Figure 5. DC current Gain

100

10

I_C= 5 I_B

I_C= 3 I_B

T_A= 125 ^o

T_A= 25 ^o

C

1

T_A= 125 ^o

C

T_A= 25 ^o

C

1

T_A= - 25 ^o

C

T_A= -25 ^o

C

0.1

0.01

0.1

0.01

0.1

1

10

1

10

I_C[A], COLLECTOR CURRENT

Figure 6. Collector-Emitter Saturation Voltage

h_FE=3

Figure 7. Collector-Emitter Saturation Voltage

h_FE=5

100

I_C= 20 I_B

I_C= 10 I_B

T_A= 125 ^o

T_A= 25 ^o

C

10

C

T_A= 125 ^o

T_A= 25 ^o

C

T_A= -25 ^o

C

T_A= -25 ^o

C

1

0.1

1

10

1

10

I_C[A], COLLECTOR CURRENT

Figure 8. Collector-Emitter Saturation Voltage

_FE=10

Figure 9. Collector-Emitter Saturation Voltage

h_FE=20

h

FJAFS1510A Rev. A2

www.fairchildsemi.com

4

Typical Performance Characteristics (Continued)

1000

100

10

14

V_CE= 5V

12

10

8

6

C_ob(Emitter Open)

4

T_A= 125⁰C

- 25⁰C

25⁰C

2

C_ob(Emitter Grounded)

0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1

10

100

1000

V_CB[V], Collector-Base Voltage

V_BE[V], BASE-EMITTER VOLTAGE

Figure 10. Base-Emitter On Voltage

Figure 11. Capacitance

2.5

2.0

1.5

1.0

0.5

250

225

200

175

150

125

100

75

t_A= 25^oC L=1mH SRF=350KHz

h_FE=5 common emitter

t_A= 25^oC L=1mH SRF=350KHz

h_FE=10 common emitter

h_FE=5 commom emitter

h_FE=10 commom emitter

h_FE=5 ESBC

50

h_FE=10 ESBC

25

h_FE=10 ESBC

h_FE=5 ESBC

1.5 2.0

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

1.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

I_C[A], COLLECTOR CURRENT

Figure 12. Inductive Load

Collector Current Fall-time (t_f)

Figure 13. Inductive Load

Collector Current Storage time (t_stg

)

360

320

280

240

200

160

120

80

t_A= 25^oC L=1mH SRF=350KHz

240

200

160

120

80

h_FE=5 ESBC

h_FE=10 common emitter

h_FE=5 commom emitter

h_FE=10 ESBC

h_FE=5 commom emitter

40

h_FE=10 ESBC

h_FE=5 ESBC

0

0.5

40

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

I_C[A], COLLECTOR CURRENT

Figure 14. Inductive Load

Collector Voltage Fall-time (t_f)

Figure 15. Inductive Load

Collector Voltage Rise-time (t_r)

FJAFS1510A Rev. A2

www.fairchildsemi.com

5

Typical Performance Characteristics (Continued)

320

7

6

5

4

3

2

1

0

t_A= 25^oC L=1mH SRF=350KHz

V_DD= +/-50V

R_LOAD= 500KΩ

280

-3V RBSOA

-5V RBSOA

-7V RBSOA

h_FE=10 common emitter

240

200

h_FE=5 ESBC

160

120

h_FE=5 commom emitter

80

h_FE=10 ESBC

40

0.5

0

200

400

600

800

1000

1200

1400

1600

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 16. Inductive Load

Figure 17. Reverse Bias Safe Operating Area

Collector Current/Voltage Crossover (t_c)

10

T_C= 25^oC

V_DD= +/-50V, R_LOAD= 500KΩ

9

8

7

6

5

4

3

2

1

0

Single 80us Pulse

H_FE= 4

10

1

0.1

0

500

1000

1500

2000

0

200

400

600

800

1000

1200

1400

1600

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 18. ESBC RBSOA

Figure 19. Forward Bias Safe Operating Area

80

70

60

50

40

30

20

10

0

25

50

75

100

125

150

175

200

T^C[^oC], CASE TEMPERATURE

Figure 20. Power Derating

FJAFS1510A Rev. A2

www.fairchildsemi.com

6

Test Circuits

ꢀ

Figure 21. Test Circuit For Inductive Load and Reverse Bias Safe Operating

}

sT

}

A

p_j

p_i

A

p_j

k|{

A

k|{

R\G}

ꢀ

Figure 22. Energy Rating Test Circuit

Figure 24. FBSOA

Figure 23. Ft Measurement

FJAFS1510A Rev. A2

www.fairchildsemi.com

7

Test Circuits (Continued)

Figure 25. Simplified Saturated Switch Driver Circuit

Functional Test Waveforms

Figure 26. Crossover Time Measurement

90% Vce

90% Ic

10% Vce

10% Ic

Figure 27. Saturated Switching Waveform

FJAFS1510A Rev. A2

www.fairchildsemi.com

8

Functional Test Waveforms (Continued)

Figure 29. Storage Time - ESBC FET

Gate (off) to I_CFall-time

Figure 28. Storage Time - Common Emitter

Base turn off (Ib2) to I_CFall-time

FJAFS1510A Rev. A2

www.fairchildsemi.com

9

Very Wide Input Voltage Range Supply

- 30 W; Secondary-Side Regulation: 3 Capacitor Input; Quasi Resonant

Y[}gXUY\h

`

X

Y

tiyYWX\Wj{{|

XWWWm

Z\}

XWWWm

Z\}

X

1

YWWTXWWW}Gkj

X

ZW~

xGyGXYWro¡

Y^Wr

^

\

[

Y

Z

|m[WW^

Z

w]rl[[Wh

twX]W_i[^Xh

XYWm

[\W}

YY}

YL

Y^Wr

mqhmzX\XWh{|

Xu[X[_

Y^Wr

oXXhnX}t

]

Q

XYWm

[\W}

}

mkj]\\

v|{

jz

\

o}

_

ttzkZW^W

XYTX[}

Z

[

XWm

mi

kl{

X

XY}¡

Y

[}

XYWm

[\W}

Xu[X[_~z

XWWm

Y\}

Y^Wr

XUWhG

QGtGGG

Figure 30. Very Wide Input Voltage Range Supply

Driving ESBC Switches

Fairchild

Proprietary

Figure 32. V_BIASSupply Derived

Figure 33. Proportional Drive

Figure 31. V_CCDerived

FJAFS1510A Rev. A2

www.fairchildsemi.com

10

Physical Dimensions

TO-3PF

15.70

15.30

9.90

3.20

2.80

3.80

3.40

4.60

4.40

7.75

10.20

9.80

23.20

22.80

26.70

26.30

16.70

16.30

16.70

16.30

14.70

14.30

2.20

1.80

2.70

2.30

3

2

1

1.93

2.20

(3X)

1.80

15.00 4.20

14.60 3.80

3.50

3.10

0.95

(3X)

0.65

1.10

0.80

5.75

5.15

5.75

5.15

NOTES:

A. THIS PACKAGE CONFORMS TO SC94

JEITA PACKAGING STANDARD.

B. ALL DIMENSIONS ARE IN MILLIMETERS.

C. DIMENSIONS ARE EXCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR PROTRUSIONS.

D. PIN 2 CONNECTS TO DAP.

5.70

5.30

3.50

3.10

E. DRAWING FILE NAME: TO3PFA03REV1

Figure 34. TO-3PF, 3 Leads, Molded, Full Pack

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the

warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/packaging/.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:

http://www.fairchildsemi.com/products/discrete/pdf/to3pf_tr.pdf.

FJAFS1510A Rev. A2

www.fairchildsemi.com

11

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

PowerTrench^®

PowerXS™

Programmable Active Droop¥

QFET^®

The Power Franchise^®

2Cool¥

F-PFS¥

FRFET^®

AccuPower¥

AX-CAP¥*

Global Power Resource^SM

GreenBridge¥

Green FPS¥

Green FPS¥ e-Series¥

Gmax¥

BitSiC¥

TinyBoost¥

TinyBuck¥

QS¥

Build it Now¥

CorePLUS¥

CorePOWER¥

CROSSVOLT¥

CTL¥

Quiet Series¥

RapidConfigure¥

¥

TinyCalc¥

TinyLogic^®

GTO¥

IntelliMAX¥

TINYOPTO¥

TinyPower¥

TinyPWM¥

TinyWire¥

Saving our world, 1mW/W/kW at a time™

SignalWise¥

SmartMax¥

ISOPLANAR¥

Making Small Speakers Sound Louder

and Better™

Current Transfer Logic¥

DEUXPEED^®

Dual Cool™

EcoSPARK^®

EfficientMax¥

SMART START¥

Solutions for Your Success¥

SPM^®

TranSiC¥

MegaBuck¥

TriFault Detect¥

TRUECURRENT^®*

PSerDes¥

MICROCOUPLER¥

MicroFET¥

ESBC¥

STEALTH¥

®

SuperFET^®

MicroPak¥

MicroPak2¥

Fairchild^®

SuperSOT¥-3

MillerDrive¥

UHC^®

Ultra FRFET¥

UniFET¥

VCX¥

VisualMax¥

VoltagePlus¥

XS™

Fairchild Semiconductor^®

FACT Quiet Series¥

FACT^®

SuperSOT¥-6

SuperSOT¥-8

SupreMOS^®

MotionMax¥

mWSaver¥

OptoHiT¥

FAST^®

SyncFET¥

Sync-Lock™

OPTOLOGIC^®

OPTOPLANAR^®

FastvCore¥

FETBench¥

FlashWriter^®*

FPS¥

®

*

®

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

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As used herein:

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intended for surgical implant into the body or (b) support or sustain

life, and (c) whose failure to perform when properly used in

accordance with instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

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Definition of Terms

Datasheet Identification

Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change

in any manner without notice.

Advance Information

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Preliminary

No Identification Needed

Obsolete

First Production

Full Production

Not In Production

Rev. I62

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1


型号：	FJAFS1510ATU
厂家：	ONSEMI
描述：	ESBC 额定 NPN 功率晶体管晶体管
文件：	总14页 (文件大小：870K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FJAFS1510ATU [ONSEMI]

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