FJB3307DH1TM [FAIRCHILD]
Transistor;
| 型号： | FJB3307DH1TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
March 2012
FJB3307D
High Voltage Fast Switching NPN Power Transistor
Features
• Built-in Diode between Collector and Emitter
• Suitable for Electronic Ballast and Switch Mode Power Supplies
Internal Schematic Diagram
C
B
D2-PAK
1
1.Base 2.Collector 3.Emitter
E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
700
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
400
V
9
V
8
A
ICP
16
A
IB
4
8
A
IBP
* Base Current (Pulse)
Junction Temperature
Storage Temperature
A
TJ
150
°C
°C
TSTG
-55 to 150
* Pulse Test: PW = 300μs, Duty Cycle = 2% Pulsed
Thermal Characteristics
Symbol
Parameter
Value
Units
PD
Total Device Dissipation
Ta = 25°C
Tc = 25°C
1.72
80
W
W
Rθja
Rθjc
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
72.5
1.56
°C/W
°C/W
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
1
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
IEBO
Parameter
Conditions
IC = 500μA, IE = 0
Min. Typ. Max. Units
Collector-Base Breakdown Voltage
700
400
9
V
V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
Emitter-Base Breakdown Voltage
Emitter Cut-off Current
DC Current Gain
IE = 500μA, IC = 0
V
VEB = 9V, IC = 0
1
mA
hFE1
hFE2
VCE = 5V, IC = 2A
VCE = 5V, IC = 5A
8
5
40
30
VCE(sat)
Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
1
2
3
3
V
V
V
V
IC = 5A, IB = 1A, Ta = 100°C
IC = 8A, IB = 2A
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 0.4A
IC = 5A, IB = 1A
IC = 5A, IB = 1A, Ta = 100°C
1.2
1.6
2
V
V
V
VF
Cob
tSTG
tF
Diode Forward Voltage
Output Capacitance
Storage Time
IC = 3A
2.5
V
VCB = 10V, IE = 0, f = 1MHz
60
pF
μs
μs
μs
3
VCC = 125V, IC = 5A
IB1 = -IB2 = 1A, RL = 50Ω
Fall Time
0.7
2.3
tSTG
Storage Time
VCC = 30V, IC = 5A, L=200μH
IB1=1A, RBB = 0Ω,
VBE(OFF)= -5V,
tF
Fall Time
150
ns
VCLAMP = 250V
* Pulse test: PW = 300μs, Duty Cycle = 2% Pulsed
hFE Classification
Classification
hFE1
H1
H2
26 ~ 39
15 ~ 28
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
5.0
100
10
1
VCE = 5V
Ta = 75 o
C
IB=300mA
4.5
Ta = 125 o
C
IB=250mA
4.0
IB=200mA
3.5
IB=150mA
Ta = 25 o
C
Ta = - 25 o
C
3.0
IB=100mA
2.5
2.0
IB=50mA
1.5
1.0
0.5
0.0
1.2
2.4
3.6
4.8
6.0
7.2
8.4
9.6 10.8 12.0
0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
100
IC = 5 IB
IC = 5 IB
10
Ta = 125 o
C
Ta = 25 o
C
Ta = - 25 o
C
1
1
0.1
Ta = 75 o
C
Ta = 75 o
C
Ta = 25 o
C
Ta = 125 o
C
Ta = - 25 o
C
0.1
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Collector Output Capacitance
Figure 6. Storage Time (Resistive Load)
1000
5.0
f = 1MHz, IE = 0
IC = 5 IB
VCC = 125V
Ta = 25oC
4.0
4.5
3.5
3.0
2.5
2.0
1.5
1.0
100
10
1
10
100
1
2
3
4
5
6
7
8
VCB [V], COLLECTOR-BASE VOLTAGE
IC [A], COLLECTOR CURRENT
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Fall Time (Resistive Load)
Figure 8. Storage Time (Inductive Load)
400
3.00
IC = 5 IB1 = 2.5 IB2, VCC = 30V,
L = 200μH, VBE(OFF) = -5V,
VCLAMP = 250V, Ta = 25oC
2.50
IC = 5 IB
VCC = 125V
Ta = 25oC
300
350
2.75
250
200
150
100
50
2.25
2.00
1.75
1.50
1.25
1.00
0
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 9. Fall Time (Inductive Load)
Figure 10. Power Derating
75.0
62.5
50.0
37.5
25.0
12.5
0.0
100
90
80
70
60
50
40
30
20
10
0
IC = 5 IB1 = 2.5 IB2, VCC = 30V,
L = 200μH, VBE(OFF) = -5V,
VCLAMP = 250V, Ta = 25oC
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
IC [A], COLLECTOR CURRENT
Figure 11. Reverse Bias Safe Operating Area
Figure 12. RBSOA Saturation
12
6
5
4
3
2
1
0
VCC = 50V, LC = 1mH
VBE(off) = -5V, IB2 = -1.5V
Ic = 4 Ib
Vcc = 50V
VBE(off) = -5V
LC = 1mH
11
10
9
8
7
6
5
4
3
2
1
0
Ic = 5 Ib
Ic = 4 Ib
Ic = 3.3 Ib
Ic = 2.2 Ib
200
300
400
500
600
700
800
0
2
4
6
8
10
12
14
16
18
VCE[V], COLLECTOR-EMITTER VOLTAGE
ICE[A], COLLECTOR CURRENT
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
4
(Continued)
Typical Performance Characteristics
Figure 13. Forward Biased Safe Operating Area
100
IC(MAX), Pulse
10μs
10
100μs
1ms
IC(MAX), DC
1
0.1
TC = 25 oC
Single Pulse
0.01
1
10
100
1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
www.fairchildsemi.com
5
Physical Dimensions
D2-PAK
Dimensions in Millimeters
www.fairchildsemi.com
© 2012 Fairchild Semiconductor Corporation
FJB3307D Rev. A1
6
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
The Power Franchise®
2Cool¥
AccuPower¥
AX-CAP¥*
F-PFS¥
FRFET®
Global Power ResourceSM
GreenBridge¥
Green FPS¥
Green FPS¥ e-Series¥
Gmax¥
GTO¥
IntelliMAX¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
MicroPak¥
MicroPak2¥
MillerDrive¥
MotionMax¥
Motion-SPM¥
mWSaver¥
BitSiC¥
TinyBoost¥
TinyBuck¥
QS¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL¥
Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
Quiet Series¥
RapidConfigure¥
¥
TinyCalc¥
TinyLogic®
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
Saving our world, 1mW/W/kW at a time™
SignalWise¥
SmartMax¥
SMART START¥
Solutions for Your Success¥
SPM®
TranSiC¥
TriFault Detect¥
TRUECURRENT®*
PSerDes¥
ESBC¥
STEALTH¥
®
SuperFET®
Fairchild®
SuperSOT¥-3
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
VoltagePlus¥
XS™
Fairchild Semiconductor®
FACT Quiet Series¥
FACT®
SuperSOT¥-6
SuperSOT¥-8
SupreMOS®
SyncFET¥
Sync-Lock™
FAST®
OptoHiT¥
FastvCore¥
FETBench¥
FlashWriter®*
FPS¥
OPTOLOGIC®
OPTOPLANAR®
®
*
®
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a)
are intended for surgical implant into the body or (b) support or
sustain life, and (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I61
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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