FJB102TM [FAIRCHILD]
暂无描述;
| 型号： | FJB102TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 暂无描述 晶体 晶体管 达林顿晶体管 |
| 文件： | 总5页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJB102
High Voltage Power Darlington Transistor
Features
•
•
•
•
•
High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
Low Collector-Emitter Saturation Voltage
High Collector-Emitter Sustaining Voltage
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
Industrial Use
Equivalent Circuit
C
B
D2-PAK
1
R1
R2
1.Base 2.Collector 3.Emitter
E
R1 ≅ 10kΩ
R2 ≅ 0.6kΩ
Absolute Maximum Ratings
Symbol
VCBO
Parameter
Value
100
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
100
V
5
V
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
8
A
ICP
15
1
A
IB
A
PC
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
80
W
°C
°C
TJ
150
TSTG
-65 ~ 150
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Device Marking
Device
FJB102
Package
D2-PAK
Reel Size
13” Dia
Tape Width
Quantity
FJB102
-
800
©2005 Fairchild Semiconductor Corporation
FJB102 Rev. A
1
www.fairchildsemi.com
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
BVCEO(sus)
BVEBO
ICBO
Parameter
Conditions
IC = 30mA, IB = 0
Min.
100
10
Typ.
Max Units
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
V
IE = 500µA, IC = 0
VCB = 100V, IE = 0
VCE = 50V, IE = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 3A
V
50
50
µA
µA
ICEO
IEBO
2
mA
hFE
DC Current Gain
1000
200
20000
V
CE = 4V, IC = 8A
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 3A, IB = 6mA
2.0
2.5
2.8
200
V
V
IC = 8A, IB = 80mA
VCE = 4V, IC = 8A
VBE(ON)
Cob
Base-Emitter Saturation Voltage
Output Capatitance
V
VE = 10V, IE = 0, f = 1MHz
pF
2
www.fairchildsemi.com
FJB102 Rev. A
Typical Performance Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain
5
10k
IB = 1mA
VCE = 4V
4
IB = 300µA
3
1k
IB = 200µA
2
1
IB = 100µA
0
100
0
1
2
3
4
5
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Saturation Voltage
Figure 4. Collector Output Capacitance
10k
10k
IE=0, f=1MHz
IC = 500 IB
1k
100
10
VBE(sat)
1k
VCE(sat)
100
1
0.1
1
10
100
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Forward Biased Safe Operating
Area
Figure 6. Power Derating
120
100
100
80
60
40
20
0
1ms
10
100µs
5ms
DC
1
0.1
0.01
0
25
50
75
100
125
150
175
0.1
1
10
100
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
3
www.fairchildsemi.com
FJB102 Rev. A
Mechanical Dimensions
D2-PAK
4.50 ±0.20
9.90 ±0.20
+0.10
–0.05
1.30
0.10 ±0.15
2.40 ±0.20
°
~3
°
0.80 ±0.10
2.54 TYP
1.27 ±0.10
0
+0.10
–0.05
0.50
2.54 TYP
10.00 ±0.20
(8.00)
(4.40)
10.00 ±0.20
(2XR0.45)
0.80 ±0.10
Dimensions in Millimeters
4
www.fairchildsemi.com
FJB102 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
TinyLogic
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
®
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
SILENT SWITCHER
SMART START™
SPM™
®
UltraFET
HiSeC™
I2C™
UniFET™
VCX™
Wire™
MSXPro™
OCX™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
®
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
®
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
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