FGA60N65SMD [ONSEMI]
IGBT，650V，60A，场截止;
| 型号： | FGA60N65SMD |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，650V，60A，场截止 局域网 PC 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总11页 (文件大小：482K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2013 年 12 月
FGA60N65SMD
650 V, 60 A 场截止 IGBT
特性
概述
•
•
•
•
•
•
•
最大结温：TJ = 175°C
正温度系数，易于并联运行
高电流能力
飞兆半导体的新型场截止第二代 IGBT 系列产品采用创新型场截
止 IGBT 技术，为光伏逆变器、UPS、焊机、通信电源、ESS 和
PFC 等低导通和开关损耗至关重要的应用提供最佳性能。
低饱和电压：VCE(sat) = 1.9 V (Typ.) @ IC = 60 A
快速开关：EOFF = 7.5 µJ/A
紧密的参数分布
符合 RoHS 标准
应用
•
光伏逆变器、 UPS、焊机、 PFC、通信电源、 ESS
C
G
TO-3PN
E
G C E
绝对最大额定值
符号
说明
额定值
650
± 20
± 30
120
60
单位
V
VCES
集电极－发射极间电压
栅极－发射极间电压
V
VGES
V
瞬态栅极－发射极间电压
集电极电流
@ TC = 25°C
@ TC = 100°C
A
IC
A
集电极电流
ICM (1)
IF
IFM (1)
PD
180
60
A
集电极脉冲电流
二极管正向电流
二极管正向电流
二极管最大正向脉冲电流
最大功耗
@ TC = 25°C
@ TC = 100°C
A
30
A
180
600
300
A
@ TC = 25°C
@ TC = 100°C
W
W
°C
°C
°C
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
注意：
1: 重复额定值：脉宽受最大结温限制
©2011 飞兆半导体公司
1
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FGA60N65SMD Rev. C2
热性能
符号
RθJC(IGBT)
RθJC(Diode)
RθJA
参数
典型值
最大值
0.25
1.1
单位
°C/W
°C/W
°C/W
结点－壳体的热阻
结点－壳体的热阻
结至环境热阻
40
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGA60N65SMD
FGA60N65SMD
TO-3PN
30
IGBT 电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVCES
VGE = 0 V, IC = 250 μA
GE = 0 V, IC = 250 μA
650
V
集电极－发射极击穿电压
击穿温度系数电压
ΔBVCES
ΔTJ
V
0.6
V/°C
ICES
IGES
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
250
μA
集电极切断电流
±400
nA
G-E 漏电流
导通特性
VGE(th)
IC = 250 μA, VCE = VGE
3.5
4.5
1.9
6.0
2.5
V
V
G-E 阈值电压
I
C = 60 A, VGE = 15 V
IC = 60 A, VGE = 15 V,
C = 175oC
VCE(sat)
集电极－发射极间饱和电压
2.1
V
T
动态特性
Cies
2915
270
85
pF
pF
pF
输入电容
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Coes
输出电容
Cres
反向传输电容
开关特性
td(on)
tr
18
47
27
70
ns
ns
导通延迟时间
上升时间
td(off)
tf
104
50
146
68
ns
关断延迟时间
下降时间
V
R
CC = 400 V, IC = 60 A,
G = 3 W, VGE = 15 V,
ns
感性负载， TC = 25°C
Eon
Eoff
Ets
1.54
0.45
1.99
18
2.31
0.60
2.91
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
导通延迟时间
上升时间
td(on)
tr
td(off)
tf
41
ns
115
48
ns
关断延迟时间
下降时间
VCC = 400 V, IC = 60 A,
R
G = 3 W, VGE = 15 V,
ns
感性负载， TC = 175°C
Eon
Eoff
Ets
2.08
0.78
2.86
mJ
mJ
mJ
导通开关损耗
关断开关损耗
总开关损耗
©2011 飞兆半导体公司
2
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FGA60N65SMD Rev. C2
IGBT 电气特性（续）
符号
参数
测试条件
最小值 典型值 最大值 单位
Qg
189
20
284
30
nC
nC
nC
总栅极电荷
VCE = 400 V, IC = 60 A,
Qge
Qgc
栅极－发射极间电荷
栅极－集电极间电荷
V
GE = 15 V
91
137
二极管电气特性
T
= 25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
T
C = 25°C
2.1
1.7
127
47
2.6
VFM
IF = 30 A
IF =30 A,
V
二极管正向电压
TC = 175°C
TC = 175°C
TC = 25°C
TC = 175°C
TC = 25°C
TC = 175°C
Erec
trr
uJ
ns
反向恢复电能
二极管反向恢复时间
212
87
dIF/dt = 200 A/μs
Qrr
nC
二极管反向恢复电荷
933
©2011 飞兆半导体公司
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FGA60N65SMD Rev. C2
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
180
180
20V
15V
20V
15V
TC = 25oC
12V
TC = 175oC
12V
10V
150
120
90
10V
150
120
90
VGE = 8V
60
60
VGE = 8V
30
30
0
0
0
0
2
4
6
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 典型饱和电压与可变电流强度下壳温的关系
3.5
180
150
120
90
Common Emitter
VGE = 15V
Common Emitter
VGE = 15V
TC = 25oC
TC = 175oC
3.0
120A
2.5
60A
2.0
60
IC = 30A
1.5
30
0
1.0
25
0
1
2
3
4
5
50
75
100
125
150
175
Case Temperature, TC [oC]
Collector-Emitter Voltage, VCE [V]
图 5. 饱和电压与 V 的关系
图 6. 饱和电压与 V 的关系
GE
GE
20
16
12
8
20
16
12
8
Common Emitter
TC = 25oC
Common Emitter
TC = 175oC
60A
60A
120A
120A
4
4
IC = 30A
IC = 30A
0
4
0
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
©2011 飞兆半导体公司
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FGA60N65SMD Rev. C2
典型性能特征
图 7. 电容特性
图 8. 栅极电荷特性
7000
15
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
6000
5000
4000
3000
2000
1000
12
VCC = 200V
300V
9
6
3
0
400V
Cies
Coes
Cres
0
0.1
1
10
0
40
80
120
160
200
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
图 9. 导通特性与栅极电阻的关系
图 10. 关断特性与栅极电阻的关系
6000
100
Common Emitter
VCC = 400V, VGE = 15V
80
tr
IC = 60A
60
40
TC = 25oC
TC = 175oC
1000
td(off)
td(on)
Common Emitter
VCC = 400V, VGE = 15V
100
10
20
tf
IC = 60A
TC = 25oC
TC = 175oC
10
0
10
20
30
40
50
0
10
20
30
40
50
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
图 11. 开关损耗与栅极电阻的关系
图 12. 导通特性与集电极电流的关系
1000
10
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
TC = 175oC
Eon
tr
100
Eoff
1
td(on)
Common Emitter
VCC = 400V, VGE = 15V
10
IC = 60A
TC = 25oC
TC = 175oC
1
0.1
0
30
60
90
120
0
10
20
30
40
50
Collector Current, IC [A]
Gate Resistance, RG [Ω]
©2011 飞兆半导体公司
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FGA60N65SMD Rev. C2
典型性能特征
图 13. 关断特性与集电极电流的关系
图 14. 开关损耗与集电极电流的关系
10
1000
Eon
td(off)
1
100
Eoff
tf
0.1
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
TC = 175oC
10
Common Emitter
VGE = 15V, RG = 3Ω
TC = 25oC
TC = 175oC
0.01
1
0
30
60
90
120
0
30
60
90
120
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 负载电流与频率的关系
图 16. SOA 特性
120
300
Vcc = 400 V
Load Current
: peak of square wave
Duty cycle : 50%
Tc = 100oC
Power Dissipation
: 300W
10μs
100
10
1
100
80
60
40
20
0
100μs
1ms
10 ms
DC
Tc = 100oC
*Notes:
0.1
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1
10
100
1000
1k
10k
100k
1M
Collector-Emitter Voltage, VCE [V]
Switching Frequency, f [Hz]
图 17. 正向特性
图 18. 反向恢复电流
14
200
TC = 25oC
12
100
TC = 175oC
TC = 175oC
10
TC = 125oC
TC = 75oC
8
6
10
TC = 175oC
TC = 125oC
TC = 75oC
TC = 25oC
di/dt =100A/uS
di/dt = 200A/uS
4
2
0
TC = 25oC
1
0
10
20
30
40
0
1
2
3
4
Forward Voltage, VF [V]
Forward Current, IF [A]
©2011 飞兆半导体公司
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FGA60N65SMD Rev. C2
典型性能特征
图 19. 反向恢复时间
图 20. 存储电荷
400
1400
TC = 25oC
TC = 175oC
TC = 25oC
1200
TC = 175oC
1000
300
800
600
400
200
0
200
didt =100A/uS
didt = 200A/uS
50
0
didt =100A/uS
didt = 200A/uS
0
15
30
45
60
0
10
20
30
40
50
60
Forward Current, IF [A]
Forward Current, IF [A]
图 21. IGBT 的瞬态热阻
0.5
0.5
0.1
0.2
0.1
0.05
0.02
0.01
0.01
PDM
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
图 22. 二极管瞬态热阻抗
3
1
0.5
0.2
0.1
0.1
0.05
PDM
0.02
0.01
t1
t2
single pulse
Duty Factor, D = t1/t2
0.01
Peak Tj = Pdm x Zthjc + TC
0.005
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
©2011 飞兆半导体公司
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FGA60N65SMD Rev. C2
机械尺寸
图 20. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
尺寸单位为毫米
©2011 飞兆半导体公司
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FGA60N65SMD Rev. C2
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