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FGA60N60UFDTU [ONSEMI]

IGBT，600V，60A，场截止;
FGA60N60UFDTU
型号： FGA60N60UFDTU
厂家： ONSEMI    ONSEMI
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IGBT，600V，60A，场截止

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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
March 2015  
FGA60N60UFD  
600 V, 60 A Field Stop IGBT  
Features  
General Description  
•
•
•
•
•
High Current Capability  
Using novel field stop IGBT technology, Fairchild’s field stop  
IGBTs offer the optimum performance for solar inverter, UPS,  
welder and PFC applications where low conduction and switch-  
ing losses are essential.  
Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 60 A  
High Input Impedance  
Fast Switching  
RoHS Compliant  
Applications  
•
Solar Inverter, UPS, Welder, PFC  
C
G
TO-3P  
E
G
C
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
600  
Unit  
VCES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Collector Current  
V
±20  
VGES  
V
±30  
@ TC = 25oC  
@ TC = 100oC  
120  
A
A
A
IC  
ICM (1)  
PD  
Collector Current  
60  
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
Pulsed Collector Current  
180  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
298  
W
W
oC  
oC  
119  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive test , Pulse width limited by max. junction temperature  
Thermal Characteristics  
Symbol  
RJC(IGBT)  
RJC(Diode)  
RJA  
Parameter  
Typ.  
Max.  
0.33  
1.1  
Unit  
oC/W  
oC/W  
oC/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
-
-
-
40  
©2009 Fairchild Semiconductor Corporation  
FGA60N60UFD Rev. 1.4  
1
www.fairchildsemi.com  
Package Marking and Ordering Information  
Part Number  
Top Mark  
Package Packing Method  
Reel Size  
Tape Width Quantity  
FGA60N60UFDTU FGA60N60UFD  
TO-3P  
Tube  
N/A  
N/A  
30  
Electrical Characteristics of the IGBT  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Off Characteristics  
BVCES  
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A  
600  
-
-
-
-
V
BVCES  
TJ  
Temperature Coefficient of Breakdown  
0.67  
V/oC  
V
GE = 0 V, IC = 250 A  
Voltage  
ICES  
IGES  
Collector Cut-Off Current  
G-E Leakage Current  
VCE = VCES, VGE = 0 V  
VGE = VGES, VCE = 0 V  
-
-
-
-
250  
A  
±400  
nA  
On Characteristics  
VGE(th)  
G-E Threshold Voltage  
IC = 250 A, VCE = VGE  
4.0  
-
5.0  
1.9  
6.5  
2.4  
V
V
I
C = 60 A, VGE = 15 V  
VCE(sat)  
Collector to Emitter Saturation Voltage  
IC = 60 A, VGE = 15 V,  
TC = 125oC  
-
2.1  
-
V
Dynamic Characteristics  
Cies  
Coes  
Cres  
Input Capacitance  
-
-
-
2855  
325  
110  
-
-
-
pF  
pF  
pF  
VCE = 30 V VGE = 0 V,  
f = 1 MHz  
,
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics  
td(on) Turn-On Delay Time  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
23  
58  
-
-
ns  
ns  
Rise Time  
Turn-Off Delay Time  
Fall Time  
130  
40  
-
ns  
V
CC = 400 V, IC = 60 A,  
RG = 5 , VGE = 15 V,  
80  
-
ns  
Inductive Load, TC = 25oC  
Eon  
Eoff  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
1.81  
0.81  
2.62  
22  
mJ  
mJ  
mJ  
ns  
-
-
-
61  
-
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
141  
63  
-
ns  
V
R
CC = 400 V, IC = 60 A,  
G = 5 , VGE = 15 V,  
-
ns  
Inductive Load, TC = 125oC  
Eon  
Eoff  
Ets  
Qg  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Total Gate Charge  
Gate to Emitter Charge  
Gate to Collector Charge  
1.92  
1.23  
3.15  
188  
21  
-
mJ  
mJ  
mJ  
nC  
nC  
nC  
-
-
-
VCE = 400 V, IC = 60 A,  
VGE = 15 V  
Qge  
Qgc  
-
97  
-
©2009 Fairchild Semiconductor Corporation  
FGA60N60UFD Rev. 1.4  
2
www.fairchildsemi.com  
Electrical Characteristics of the Diode  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
2.0  
Max Unit  
T
C = 25oC  
-
-
-
-
-
-
2.6  
VFM  
Diode Forward Voltage  
IF = 30 A  
V
TC = 125oC  
C = 25oC  
1.8  
-
T
47  
-
trr  
Diode Reverse Recovery Time  
Diode Reverse Recovery Charge  
ns  
TC = 125oC  
TC = 25oC  
TC = 125oC  
179  
83  
-
IF = 30 A, diF/dt = 200 A/s  
-
Qrr  
nC  
567  
-
©2009 Fairchild Semiconductor Corporation  
FGA60N60UFD Rev. 1.4  
3
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 1. Typical Output Characteristics  
Figure 2. Typical Output Characteristics  
180  
180  
TC = 125oC  
TC = 25oC  
20V  
15V  
15V  
20V  
150  
120  
90  
60  
30  
0
150  
120  
90  
60  
30  
0
12V  
12V  
10V  
10V  
VGE = 8V  
VGE = 8V  
0
2
4
6
8
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
Figure 3. Typical Saturation Voltage  
Characteristics  
Figure 4. Transfer Characteristics  
180  
180  
Common Emitter  
VCE = 20V  
TC = 25oC  
Common Emitter  
VGE = 15V  
TC = 25oC  
TC = 125oC  
150  
150  
TC = 125oC  
120  
120  
90  
60  
30  
0
90  
60  
30  
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]  
Gate-Emitter Voltage,VGE [V]  
Figure 5. Saturation Voltage vs. Case  
Figure 6. Saturation Voltage vs. V  
GE  
Temperature at Variant Current Level  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
20  
Common Emitter  
TC = -40oC  
Common Emitter  
VGE = 15V  
16  
12  
8
120A  
60A  
120A  
4
60A  
IC = 30A  
IC = 30A  
0
0
3
6
9
12  
15  
18  
25  
50  
75  
100  
125  
Collector-EmitterCase Temperature, TC [oC]  
Gate-Emitter Voltage, VGE [V]  
©2009 Fairchild Semiconductor Corporation  
FGA60N60UFD Rev. 1.4  
4
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 7. Saturation Voltage vs. V  
Figure 8. Saturation Voltage vs. V  
GE  
GE  
20  
20  
Common Emitter  
TC = 25oC  
Common Emitter  
TC = 125oC  
16  
12  
8
16  
12  
8
120A  
120A  
60A  
4
60A  
4
IC = 30A  
IC = 30A  
6
0
0
0
3
9
12  
15  
18  
0
3
6
9
12  
15  
18  
Gate-Emitter Voltage, VGE [V]  
Gate-Emitter Voltage, VGE [V]  
Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics  
6000  
4000  
2000  
0
15  
12  
9
Common Emitter  
VGE = 0V, f = 1MHz  
TC = 25oC  
Common Emitter  
TC = 25oC  
Cies  
300V  
200V  
VCC = 100V  
Coes  
6
3
Cres  
0
1
10  
Collector-Emitter Voltage, VCE [V]  
30  
0
50  
100  
150  
200  
Gate Charge, Qg [nC]  
Figure 11. SOA Characteristics  
 Figure 12. Turn off Switching SOA Characteristics  
300  
500  
10s  
100  
10  
100  
100s  
1ms  
10 ms  
DC  
1
10  
Single Nonrepetitive  
o
Pulse T = 25 C  
C
0.1  
Curves must be derated  
linearly with increase  
in temperature  
Safe Operating Area  
VGE = 15V, TC = 125oC  
1
0.01  
1
10  
100  
1000  
1
10  
100  
1000  
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
©2009 Fairchild Semiconductor Corporation  
FGA60N60UFD Rev. 1.4  
5
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 13. Turn-on Characteristics vs.  
Gate Resistance  
Figure 14. Turn-off Characteristics vs.  
Gate Resistance  
300  
6000  
Common Emitter  
VCC = 400V, VGE = 15V  
IC = 60A  
TC = 25oC  
1000  
100  
TC = 125oC  
tr  
td(off)  
100  
Common Emitter  
VCC = 400V, VGE = 15V  
tf  
IC = 60A  
TC = 25oC  
td(on)  
TC = 125oC  
10  
10  
0
10  
20  
30  
40  
50  
0
10  
20  
30  
40  
50  
Gate Resistance, RG []  
Gate Resistance, RG []  
Figure 15. Turn-on Characteristics vs Figure 16.Turn-off Characteristics vs.  
Collector Current   
Collector Current  
500  
1000  
Common Emitter  
VGE = 15V, RG = 5  
Common Emitter  
VGE = 15V, RG = 5  
TC = 25oC  
TC = 25oC  
TC = 125oC  
TC = 125oC  
tr  
100  
td(off)  
100  
td(on)  
tf  
10  
30  
0
20  
40  
60  
80  
100  
120  
0
20  
40  
60  
80  
100  
120  
Collector Current, IC [A]  
Collector Current, IC [A]  
Figure 17. Switching Loss vs. Gate ResistanceFigure 18.Switching Loss vs. Collector Current  
20  
20  
Common Emitter  
VGE = 15V, RG = 5  
Common Emitter  
VCC = 400V, VGE = 15V  
10  
TC = 25oC  
10  
Eon  
IC = 60A  
TC = 25oC  
TC = 125oC  
TC = 125oC  
Eoff  
Eon  
1
Eoff  
1
0.1  
0
20  
40  
60  
80  
100  
120  
0
10  
20  
30  
40  
50  
Gate Resistance, RG []  
Collector Current, IC [A]  
©2009 Fairchild Semiconductor Corporation  
FGA60N60UFD Rev. 1.4  
6
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 19. Forward Characteristics  
Figure 20. Reverse Current  
200  
500  
100  
100  
TC = 125oC  
TJ = 125oC  
TJ = 25oC  
10  
TC = 75oC  
10  
1
TJ = 75oC  
0.1  
TC = 25oC  
TC = 25oC  
TC = 125oC  
0.01  
1
0
200  
400  
600  
0
1
2
3
4
Forward Voltage, VF [V]  
Reverse Voltage, VR [V]  
Figure 21. Stored Charge  
Figure 22. Reverse Recovery Time  
60  
120  
100  
200A/s  
200A/s  
50  
80  
60  
di/dt = 100A/s  
40  
diF/dt = 100A/s  
40  
20  
Tc = 25℃  
Tc = 25℃  
30  
5
20  
40  
60  
5
20  
40  
60  
Forward Current, IF [A]  
Forward Current, IF [A]  
Figure 23. Transient Thermal Impedance of IGBT  
1
0.5  
0.1  
0.2  
0.1  
0.05  
0.02  
0.01  
PDM  
0.01  
t1  
t2  
single pulse  
Duty Factor, D = t1/t2  
Peak Tj = Pdm x Zthjc + TC  
1E-3  
1E-5  
1E-4  
1E-3  
0.01  
0.1  
1
Rectangular Pulse Duration [sec]  
©2009 Fairchild Semiconductor Corporation  
FGA60N60UFD Rev. 1.4  
7
www.fairchildsemi.com  
5.00  
4.60  
13.80  
13.40  
1.65  
1.45  
3.30  
3.10  
16.20  
15.40  
5.20  
4.80  
R0.50  
3°  
16.96  
16.56  
20.10  
19.70  
18.90  
18.50  
7.20  
6.80  
3°  
4°  
1
3
2.00  
1.60  
3.70  
3.30  
1.85  
2.60  
2.20  
20.30  
19.70  
2.20  
1.80  
3.20  
2.80  
1.20  
0.80  
M
0.55  
0.75  
0.55  
5.45  
5.45  
NOTES: UNLESS OTHERW ISE SPECIFIED  
A) THIS PACKAGE CONFORMS TO EIAJ  
SC-65 PACKAGING STANDARD.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSION AND TOLERANCING PER  
ASME14.5-2009.  
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSSIONS.  
E) DRAW ING FILE NAME: TO3PN03AREV2.  
F) FAIRCHILD SEMICONDUCTOR.  
R0.50  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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