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FGA6065ADF [ONSEMI]

IGBT，650V，60A，场截止沟槽;
FGA6065ADF
型号： FGA6065ADF
厂家： ONSEMI    ONSEMI
描述：

IGBT，650V，60A，场截止沟槽

双极性晶体管
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
May 2015  
FGA6065ADF  
650 V, 60 A Field Stop Trench IGBT  
Features  
General Description  
•
•
•
•
•
•
•
•
Maximum Junction Temperature : TJ = 175 oC  
Positive Temperaure Co-efficient for Easy Parallel Operating  
High Current Capability  
This ADF IGBT series adopted Field Stop Trench 3rd genera-  
tion IGBT which offer extreme low Rds(on) and much faster  
switching characteristics for outstanding efficiency. And this kind  
of technology is fully optimized to variety PFC (Power Factor  
Correction) topology ; Single boost, Multi channel interleaved  
etc with over 20KHz switching performance. TO3P package  
provide Super Low thermal resistance for much wider SOA for  
system stability.  
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A  
100% of the Parts Tested for ILM (1)  
High Input Impedance  
Fast Switching  
RoHS Compliant  
Applications  
•
PFC topology for Home appliance : Single Boost , Multi chan-  
nel Interleaved etc.  
•
PFC Topology for Welder  
C
G
G
C
TO-3PN  
E
E
Absolute Maximum Ratings  
Symbol  
Description  
FGA6065ADF  
Unit  
V
VCES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
650  
20  
V
VGES  
Transient Gate to Emitter Voltage  
Collector Current  
30  
V
@ TC = 25oC  
@ TC = 100oC  
@ TC = 25oC  
120  
A
IC  
Collector Current  
60  
A
ILM (1)  
ICM (2)  
Pulsed Collector Current  
Pulsed Collector Current  
Diode Forward Current  
180  
A
180  
A
@ TC = 25oC  
@ TC = 100oC  
60  
A
IF  
Diode Forward Current  
30  
A
IFM (2)  
PD  
Pulsed Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
120  
A
@ TC = 25oC  
@ TC = 100oC  
306  
W
W
oC  
oC  
153  
TJ  
-55 to +175  
-55 to +175  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1. V = 400 V, V = 15 V, I =180 A, R = 48.4  Inductive Load  
CC  
GE  
C
G
2. Repetitive rating: Pulse width limited by max. junction temperature  
©2015 Fairchild Semiconductor Corporation  
FGA6065ADF Rev. 1.0  
1
www.fairchildsemi.com  
Thermal Characteristics  
Symbol  
Parameter  
FGA6065ADF  
Unit  
oC/W  
oC/W  
oC/W  
RJC(IGBT)  
RJC(Diode)  
RJA  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Junction to Ambient, Max.  
0.49  
1.75  
40  
Package Marking and Ordering Information  
Part Number  
Top Mark  
Package Packing Method  
Reel Size  
Tape Width  
Quantity  
FGA6065ADF  
FGA6065ADF  
TO-3PN  
Tube  
-
-
30  
Electrical Characteristics of the IGBT  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Off Characteristics  
BVCES  
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1 mA  
Temperature Coefficient of Breakdown  
650  
-
-
-
-
V
BVCES  
TJ  
/
V/oC  
I
C = 1 mA, Reference to 25oC  
0.6  
Voltage  
ICES  
IGES  
Collector Cut-Off Current  
G-E Leakage Current  
VCE = VCES, VGE = 0 V  
VGE = VGES, VCE = 0 V  
-
-
-
-
250  
A  
±400  
nA  
On Characteristics  
VGE(th)  
G-E Threshold Voltage  
IC = 60 mA, VCE = VGE  
IC = 60 A, VGE = 15 V  
IC = 60 A, VGE = 15 V,  
4.1  
-
5.6  
1.8  
7.6  
2.3  
V
V
VCE(sat)  
Collector to Emitter Saturation Voltage  
-
2.3  
-
V
T
C = 175oC  
Dynamic Characteristics  
Cies  
Coes  
Cres  
Input Capacitance  
-
-
-
2419  
82  
-
-
-
pF  
pF  
pF  
V
CE = 30 V VGE = 0 V,  
,
Output Capacitance  
f = 1MHz  
Reverse Transfer Capacitance  
31  
Switching Characteristics  
td(on) Turn-On Delay Time  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25.6  
67.2  
71  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
Rise Time  
Turn-Off Delay Time  
Fall Time  
ns  
VCC = 400 V, IC = 60 A,  
R
G = 6 , VGE = 15 V,  
22  
ns  
Inductive Load, TC = 25oC  
Eon  
Eoff  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
2.46  
0.52  
2.98  
22.4  
63.2  
77  
mJ  
mJ  
mJ  
ns  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
ns  
VCC = 400 V, IC = 60 A,  
R
G = 6 , VGE = 15 V,  
22  
ns  
Inductive Load, TC = 175oC  
Eon  
Eoff  
Ets  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
3.19  
0.71  
3.90  
mJ  
mJ  
mJ  
©2015 Fairchild Semiconductor Corporation  
FGA6065ADF Rev. 1.0  
2
www.fairchildsemi.com  
Electrical Characteristics of the IGBT (Continued)  
Symbol  
Qg  
Parameter  
Test Conditions  
Min.  
Typ.  
84  
Max Unit  
Total Gate Charge  
-
-
-
-
-
-
nC  
nC  
nC  
V
V
CE = 400 V, IC = 60 A,  
GE = 15 V  
Qge  
Gate to Emitter Charge  
Gate to Collector Charge  
15  
Qgc  
32  
Electrical Characteristics of the Diode  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
1.8  
Max Unit  
T
T
T
T
C = 25oC  
C = 175oC  
C = 175oC  
C = 25oC  
C = 175oC  
C = 25oC  
-
-
-
-
-
-
-
2.3  
VFM  
Diode Forward Voltage  
IF = 30 A  
V
1.7  
-
Erec  
trr  
Reverse Recovery Energy  
233  
110  
-
-
-
-
-
uJ  
ns  
Diode Reverse Recovery Time  
IF = 30 A, dIF/dt = 200 A/s  
T
T
271  
400  
1740  
Qrr  
Diode Reverse Recovery Charge  
nC  
TC = 175oC  
©2015 Fairchild Semiconductor Corporation  
FGA6065ADF Rev. 1.0  
3
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 1. Typical Output Characteristics  
Figure 2. Typical Output Characteristics  
180  
180  
TC = 25oC  
20V  
TC = 175oC  
20V  
10V  
15V  
150  
150  
12V  
15V  
12V  
10V  
120  
120  
90  
90  
60  
30  
0
VGE = 8V  
VGE = 8V  
60  
30  
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]  
Collector-Emitter Voltage, VCE [V]  
Figure 3. Typical Saturation Voltage  
Characteristics  
Figure 4. Saturation Voltage vs. Case  
Temperature at Variant Current Level  
4
3
2
1
120  
Common Emitter  
VGE = 15V  
Common Emitter  
VGE = 15V  
TC = 25oC  
TC = 175oC  
90  
120A  
60A  
60  
30  
0
IC = 30A  
-50  
0
50  
100  
150  
Case Temperature, TC [oC]  
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]  
Figure 5. Saturation Voltage vs. V  
Figure 6. Saturation Voltage vs. V  
GE  
GE  
20  
20  
Common Emitter  
TC = 25oC  
Common Emitter  
TC = 175oC  
16  
12  
8
16  
12  
8
60A  
IC = 30A  
120A  
60A  
120A  
IC = 30A  
4
4
0
0
4
8
12  
16  
20  
4
8
12  
16  
20  
Gate-Emitter Voltage, VGE [V]  
Gate-Emitter Voltage, VGE [V]  
©2015 Fairchild Semiconductor Corporation  
FGA6065ADF Rev. 1.0  
4
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 7. Capacitance Characteristics  
Figure 8. Gate charge Characteristics  
15  
10000  
Common Emitter  
TC = 25oC  
Cies  
12  
VCC = 200V  
300V  
400V  
1000  
9
6
3
0
Coes  
100  
Common Emitter  
VGE = 0V, f = 1MHz  
TC = 25oC  
Cres  
10  
0
15  
30  
45  
60  
75  
90  
1
10  
Collector-Emitter Voltage, VCE [V]  
30  
Gate Charge, Qg [nC]  
Figure 9. Turn-on Characteristics vs.  
Gate Resistance  
Figure 10. Turn-off Characteristics vs.  
Gate Resistance  
1000  
200  
100  
td(off)  
tr  
100  
tf  
Common Emitter  
VCC = 400V, VGE = 15V  
Common Emitter  
VCC = 400V, VGE = 15V  
td(on)  
IC = 60A  
TC = 25oC  
TC = 175oC  
IC = 60A  
TC = 25oC  
TC = 175oC  
10  
10  
0
10  
20  
30  
40  
50  
0
10  
20  
30  
40  
50  
Gate Resistance, RG []  
Gate Resistance, RG []  
Figure 11. Switching Loss vs.  
Gate Resistance  
Figure 12. Turn-on Characteristics vs.  
Collector Current  
400  
10  
Eon  
tr  
100  
td(on)  
1
Eoff  
Common Emitter  
VCC = 400V, VGE = 15V  
Common Emitter  
VGE = 15V, RG = 6  
IC = 60A  
TC = 25oC  
TC = 175oC  
10  
TC = 25oC  
TC = 175oC  
4
20  
0.1  
40  
60  
80  
100 120 140 160  
0
10  
20  
30  
40  
50  
Collector Current, IC [A]  
Gate Resistance, RG []  
©2015 Fairchild Semiconductor Corporation  
FGA6065ADF Rev. 1.0  
5
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 13. Turn-off Characteristics vs.  
Figure 14. Switching Loss vs.  
Collector Current  
Collector Current  
500  
20  
10  
Eon  
100  
td(off)  
Eoff  
1
tf  
Common Emitter  
Common Emitter  
VGE = 15V, RG = 6  
TC = 25oC  
VGE = 15V, RG = 6  
TC = 25oC  
10  
4
TC = 175oC  
TC = 175oC  
0.1  
20  
40  
60  
80  
100 120 140 160  
20  
40  
60  
80  
100 120 140 160  
Collector Current, IC [A]  
Collector Current, IC [A]  
Figure 15. Load Current Vs. Frequency  
Figure 16. SOA Characteristic s  
400  
250  
Square Wave  
TJ <= 175oC, D = 0.5, VCE = 400V  
100  
200  
150  
100  
50  
VGE = 15/0V, RG = 6  
10s  
100s  
TC = 25oC  
TC = 75oC  
1ms  
10  
10 ms  
DC  
TC = 100oC  
*Notes:  
1. TC = 25oC  
2. TJ = 175oC  
1
3. Single Pulse  
0.1  
0
1k  
1
10  
100  
1000  
10k  
100k  
1M  
Collector-Emitter Voltage, VCE [V]  
Switching Frequency, f[Hz]  
Figure 17. Forward Characteristics  
Figure 18. Reverse Recovery Current  
18  
180  
100  
15  
TC = 25oC  
TC = 175oC  
TC = 75oC  
di/dt = 200A/s  
12  
9
6
3
0
di/dt = 100A/s  
10  
di/dt = 200A/s  
di/dt = 100A/s  
TC = 25oC  
TC = 25oC  
TC = 175oC ---  
75 90  
TC = 75oC  
TC = 175oC  
5
1
0
15  
30  
45  
60  
0
1
2
3
4
6
Forward Current, IF [A]  
Forward Voltage, VF [V]  
©2015 Fairchild Semiconductor Corporation  
FGA6065ADF Rev. 1.0  
6
www.fairchildsemi.com  
Typical Performance Characteristics  
Figure 19. Reverse Recovery Time  
Figure 20. Stored Charge  
3000  
500  
TC = 25oC  
TC = 25oC  
TC = 175oC ---  
TC = 175oC ---  
400  
2500  
2000  
1500  
1000  
500  
300  
di/dt = 100A/s  
di/dt = 200A/s  
200  
di/dt = 200A/s  
di/dt = 100A/s  
100  
0
0
0
15  
30  
45  
60  
75  
90  
0
15  
30  
45  
60  
75  
90  
Forward Current, IF [A]  
Forward Current, IF [A]  
Figure 21.Transient Thermal Impedance of IGBT  
0.7  
0.1  
0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
PDM  
t1  
t
Duty Factor,2D = t1/t2  
single pulse  
0.01  
Peak Tj = Pdm x Zthjc + TC  
0.005  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Rectangular Pulse Duration [sec]  
Figure 22.Transient Thermal Impedance of Diode  
2
1
0.5  
0.2  
0.1  
0.05  
0.1  
0.02  
PDM  
0.01  
t1  
single pulse  
t2  
Duty Factor, D = t1/t2  
Peak Tj = Pdm x Zthjc + TC  
0.01  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
Rectangular Pulse Duration [sec]  
©2015 Fairchild Semiconductor Corporation  
FGA6065ADF Rev. 1.0  
7
www.fairchildsemi.com  
5.00  
4.60  
13.80  
13.40  
1.65  
1.45  
3.30  
3.10  
16.20  
15.40  
5.20  
4.80  
R0.50  
3°  
16.96  
16.56  
20.10  
19.70  
18.90  
18.50  
7.20  
6.80  
3°  
4°  
1
3
2.00  
1.60  
3.70  
3.30  
1.85  
2.60  
2.20  
20.30  
19.70  
2.20  
1.80  
3.20  
2.80  
1.20  
0.80  
M
0.55  
0.75  
0.55  
5.45  
5.45  
NOTES: UNLESS OTHERW ISE SPECIFIED  
A) THIS PACKAGE CONFORMS TO EIAJ  
SC-65 PACKAGING STANDARD.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSION AND TOLERANCING PER  
ASME14.5-2009.  
D) DIMENSIONS ARE EXCLUSSIVE OF BURRS,  
MOLD FLASH, AND TIE BAR EXTRUSSIONS.  
E) DRAW ING FILE NAME: TO3PN03AREV2.  
F) FAIRCHILD SEMICONDUCTOR.  
R0.50  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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