FGA15S125P [ONSEMI]
IGBT，1250v，15A，短路阳极;
| 型号： | FGA15S125P |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1250v，15A，短路阳极 局域网 栅 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：490K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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2013 年 8 月
FGA15S125P
1250 V、 15 A 阳极短路 IGBT
特性
概述
•
•
•
•
高速开关
飞兆半导体的短路阳极沟道 IGBT 系列采用先进的场截止沟道和
短路阳极技术，为开关应用提供出色的导通和开关性能。该器件
可并联配置，具有极佳的雪崩能力。该器件为感应加热和微波炉
而设计。
低饱和电压：VCE(sat) =2.25 V @ IC=15 A
高输入阻抗
符合 RoHS 标准
应用
•
感应加热、微波炉
C
G
TO-3PN
E
G C E
绝对最大额定值
符号
说明
额定值
1250
25
30
单位
V
VCES
VGES
集电极 - 发射极之间电压
V
栅极－发射极间电压
集电极电流
@ TC=25°C
A
IC
@ TC=100°C
15
A
集电极电流
ICM (1)
IF
45
A
集电极脉冲电流
二极管正向连续电流
二极管正向连续电流
最大功耗
@ TC=25°C
@ TC=100°C
@ TC=25°C
@ TC=100°C
30
A
15
A
136
68
W
W
°C
°C
°C
PD
最大功耗
TJ
工作结温
-55 至 +175
-55 至 +175
300
Tstg
TL
存储温度范围
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
热性能
符号
RJC(IGBT)
RJA
参数
结至外壳热阻最大值
典型值
最大值
1.1
单位
°C/W
°C/W
-
-
40
结至环境热阻最大值
注意：
1: 受限于 Tjmax
©2012 飞兆半导体公司
1
www.fairchildsemi.com
FGA15S125P Rev. C3
封装标识与定购信息
器件标识
器件
封装
卷尺寸
带宽
数量
FGA15S125P
FGA15S125P
TO-3PN
-
-
30
IGBT 的电气特性
T
=25°C 除非另有说明
C
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
ICES
IGES
-
-
-
-
1
mA
nA
集电极切断电流
VCE=1250 V， VGE=0 V
VGE=VGES， VCE=0 V
±500
G-E 漏电流
导通特性
VGE(th)
4.5
-
6.0
7.5
V
V
G-E 阈值电压
IC=15 mA， VCE=VGE
I
C =15 A， VGE=15 V
2.25
2.72
TC=25°C
I
C =15 A， VGE=15 V
VCE(sat)
-
-
2.5
-
-
集电极 - 发射极间饱和电压
V
V
TC=125°C
I
C =15 A， VGE=15 V，
2.75
TC=175°C
IF =15 A， TC=25°C
IF =15 A， TC=175°C
-
-
2
2.55
-
V
V
VFM
二极管正向电压
2.55
动态特性
Cies
-
-
-
1360
40
-
-
-
pF
pF
pF
输入电容
VCE =30 V， VGE=0 V，
f=1 MHz
Coes
输出电容
Cres
20
反向传输电容
开关特性
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
10
260
400
100
0.74
0.50
1.24
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
导通延迟时间
上升时间
td(off)
tf
ns
关断延迟时间
下降时间
VCC=600 V， IC=15 A，
RG=10 ， VGE =15 V，
阻性负载， TC =25°C
ns
Eon
Eoff
Ets
mJ
mJ
mJ
ns
导通开关损耗
关断开关损耗
总开关损耗
td(on)
tr
td(off)
tf
导通延迟时间
上升时间
320
420
250
0.94
1.23
2.17
129
9
ns
ns
关断延迟时间
下降时间
VCC=600 V， IC=15 A，
RG=10 ， VGE =15 V，
阻性负载， TC =175°C
ns
Eon
Eoff
Ets
mJ
mJ
mJ
nC
nC
nC
导通开关损耗
关断开关损耗
总开关损耗
Qg
总栅极电荷
VCE=600 V， IC=15 A，
Qge
Qgc
栅极－发射极间电荷
栅极－发射极间电荷
V
GE=15 V
66
©2012 飞兆半导体公司
2
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FGA15S125P Rev. C3
典型性能特征
图 1. 典型输出特性
图 2. 典型输出特性
80
80
TC = 25oC
70
15V
TC = 175oC
70
20V
VGE=20V
17V
15V
VGE=17V
60
50
40
30
20
10
0
60
50
40
30
20
10
0
12V
12V
10V
10V
9V
8V
9V
8V
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-Emitter Voltage, VCE [V]
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Collector-Emitter Voltage, VCE [V]
图 3. 典型饱和电压特性
图 4. 传输特性
60
50
40
30
20
10
0
50
40
30
20
10
0
Common Emitter
VGE = 15V
TC = 25oC
Common Emitter
VCE = 20V
TC = 25oC
TC = 175oC
TC = 175oC ---
0.0
1.0
2.0
3.0
4.0
5.0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
图 5. 饱和电压与壳温的关系 （在可变电流强度下）
图 6. 饱和电压与 V 的关系
GE
20
15
10
4.5
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
4.0
30A
3.5
3.0
15A
2.5
30A
15A
IC = 7.5A
5
IC = 7.5A
2.0
1.5
1.0
0
0
4
8
12
16
20
25
50
75
100
125
150
175
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2012 飞兆半导体公司
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FGA15S125P Rev. C3
典型性能特征
图 7. 饱和电压与 V 的关系
图 8. 电容特性
GE
20
16
12
10000
Common Emitter
TC = 175oC
Cies
1000
100
10
30A
15A
Coes
Cres
8
IC = 7.5A
Common Emitter
4
VGE = 0V, f = 1MHz
TC = 25oC
1
0
5
10
15
20
25
30
4
8
12
16
20
70
70
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
图 9. 栅极电荷特性
图 10. SOA 特性
100
15
Common Emitter
400V
TC = 25oC
600V
12
10s
10
1
VCC = 200V
100s
1ms
9
6
3
0
10ms
DC
*Notes:
0.1
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.01
1
10
100
1000
0
10
20
30
40
50
60
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
图 11. 导通特性与栅极电阻的关系
图 12. 关断特性与栅极电阻
200
10000
Common Emitter
VCC = 600V, VGE = 15V
IC = 15A
TC = 25oC
TC = 175oC ---
tr
1000
100
td(off)
td(on)
Common Emitter
VCC = 600V, VGE = 15V
tf
IC = 15A
TC = 25oC
TC = 175oC ---
5
10
20
30
40
50
60
10
20
30
40
50
60
70
Gate Resistance, RG []
Gate Resistance, RG []
©2012 飞兆半导体公司
4
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FGA15S125P Rev. C3
典型性能特征
图 13. 导通特性与集电极电流的关系
图 14. 关断特性与集电极电流的关系
Common Emitter
Common Emitter
1000
VGE = 15V, RG = 10
TC = 25oC
VGE = 15V, RG = 10
TC = 25oC
1000
TC = 175oC ---
TC = 175oC ---
td(off)
tr
500
100
tf
td(on)
100
10
7.5
15
30
7.5
15
30
Collector Current, IC [A]
Collector Current, IC [A]
图 15. 开关损耗与栅极电阻的关系
图 16. 开关损耗与集电极电流的关系
10k
10k
Common Emitter
VGE = 15V, RG = 10
Common Emitter
VCC = 600V, VGE = 15V
TC = 25oC
TC = 175oC ---
IC = 15A
TC = 25oC
TC = 175oC ---
Eon
Eon
Eoff
1k
1k
100
0
Eoff
100
10
15
Collector Current, IC [A]
30
20
30
40
50
60
70
7.5
Gate Resistance, RG []
图 17. 关断开关 SOA 特性
图 18. 正向特性
100
80
10
1
10
TC = 25oC ---
TC = 175oC
Safe Operating Area
VGE = 15V, TC = 175oC
1
0.1
0.5
1
10
100 1000
1
2
Forward Voltage, VF [V]
Collector-Emitter Voltage, VCE [V]
©2012 飞兆半导体公司
5
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FGA15S125P Rev. C3
典型性能特征
图 19. IGBT 瞬态热阻
1.2
1
0.5
0.2
0.1
PDM
0.05
0.02
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
0.1
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
Rectangular Pulse Duration [sec]
©2012 飞兆半导体公司
6
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FGA15S125P Rev. C3
机械尺寸
图 20. TO-3P 3L - 3LD， T03， PLASTIC， EIAJ SC-65
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
尺寸单位为毫米
©2012 飞兆半导体公司
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FGA15S125P Rev. C3
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Rev. I66
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