FGA180N33ATTU [ONSEMI]
330 V PDP 沟道 IGBT;
| 型号： | FGA180N33ATTU |
| 厂家： | 
ONSEMI |
| 描述： | 330 V PDP 沟道 IGBT 双极性晶体管 光电二极管 |
| 文件： | 总10页 (文件大小：682K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 2008
FGA180N33AT
tm
330V, 180A PDP Trench IGBT
Features
General Description
•
•
•
•
High Current Capability
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Low saturation voltage: VCE(sat) =1.03V @ IC = 40A
High input impedance
RoHS compliant
Applications
PDP SYSTEM
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
330
Units
VCES
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
V
V
A
VGES
± 30
@ TC = 25oC
180
IC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
IC pulse (1)
Pulsed Collector Current
450
A
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
390
W
W
oC
oC
PD
156
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive test, pulse width = 100usec, Duty = 0.1
* I pulse limited by max Tj
C_
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
0.32
40
Units
oC/W
oC/W
RθJC(IGBT)
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
-
-
©2008 Fairchild Semiconductor Corporation
FGA180N33AT Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Packaging
Max Qty per
Box
Device Marking
Device
Package
Type
Qty per Tube
FGA180N33AT
FGA180N33ATTU
TO-3P
Tube
30ea
-
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
330
-
-
-
-
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
-
-
250
±400
µA
nA
IGES
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 250uA, VCE = VGE
IC = 40A, VGE = 15V
IC = 180A, VGE = 15V,
2.5
-
4.0
1.1
5.5
1.4
V
V
-
-
1.68
1.89
-
V
V
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 180A, VGE = 15V
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
3880
305
-
-
-
pF
pF
pF
VCE = 30V VGE = 0V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
180
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
27
80
-
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
VCC = 200V, IC = 40A,
RG = 5Ω, VGE = 15V,
Rise Time
-
Resistive Load, TC = 25oC
Turn-Off Delay Time
Fall Time
108
180
26
-
240
Turn-On Delay Time
Rise Time
-
VCC = 200V, IC = 40A,
RG = 5Ω, VGE = 15V,
75
-
Resistive Load, TC = 125oC
Turn-Off Delay Time
Fall Time
112
250
169
22
-
300
Qg
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
-
-
-
VCE = 200V, IC = 40A,
VGE = 15V
Qge
Qgc
69
FGA180N33AT Rev. A
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
200
200
TC = 125oC
10V
TC = 25oC
10V
20V
20V
9V
9V
8V
8V
150
15V
150
100
50
15V
12V
12V
100
7V
7V
50
VGE = 6V
VGE = 6V
0
0
0
2
4
6
0
2
4
6
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
200
200
Common Emitter
VCE = 20V
TC = 25oC
TC = 125oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
150
150
100
50
0
100
50
0
2
4
6
8
10
0
1
2
3
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
2.1
1.8
1.5
1.2
0.9
0.6
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
180A
90A
16
12
8
180A
90A
40A
4
40A
IC = 20A
IC = 20A
0
25
50
75
100
125
150
0
4
8
12
16
20
Collector-EmitterCase Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
FGA180N33AT Rev. A
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
6000
20
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Common Emitter
TC = 125oC
16
12
8
Cies
4000
Coes
180A
90A
2000
40A
4
Cres
IC = 20A
4
0
0
1
10
Collector-Emitter Voltage, VCE [V]
0
8
12
16
20
30
Gate-Emitter Voltage, VGE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
1000
15
IC MAX (Pulse)
Common Emitter
TC = 25oC
10µs
12
100
10
1
VCC = 100V
100µs
1ms
10ms
200V
9
IC MAX (Continuous)
6
3
0
DC Operation
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.1
1
10
100
1000
0
30
60
90
120
150
180
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
500
5000
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
td(off)
TC = 125oC
1000
tr
100
tf
Common Emitter
td(on)
VCC = 200V, VGE = 15V
IC = 40A
TC = 25oC
TC = 125oC
100
70
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
FGA180N33AT Rev. A
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
2000
1000
Common Emitter
VGE = 15V, RG = 5Ω
TC = 25oC
TC = 125oC
tf
1000
100
td(off)
tr
Common Emitter
VGE = 15V, RG = 5Ω
td(on)
TC = 25oC
TC = 125oC
100
1
10 30
10 30
60
90
120
150
180
60
90
120
150
180
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Turn off Switching SOA Characteristics
500
100
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1
10
100
400
Collector-Emitter Voltage, VCE [V]
FGA180N33AT Rev. A
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 16.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
PDM
0.02
0.01
0.01
1E-3
t1
t2
single pulse
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-5
1E-4
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
FGA180N33AT Rev. A
6
www.fairchildsemi.com
Mechanical Dimensions
TO-3P
15.60 ±0.20
13.60 ±0.20
9.60 ±0.20
4.80 ±0.20
+0.15
ø3.20 ±0.10
1.50
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
1.40 ±0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45 ±0.30]
[5.45 ±0.30]
Dimensions in Millimeters
FGA180N33AT Rev. A
7
www.fairchildsemi.com
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This datasheet contains the design specifications for product development.
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Rev. I34
FGA180N33AT Rev. A
8
www.fairchildsemi.com
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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