FGA20N120FTDTU [ONSEMI]
IGBT,1200V,20A,场截止沟槽;型号: | FGA20N120FTDTU |
厂家: | ONSEMI |
描述: | IGBT,1200V,20A,场截止沟槽 PC 栅 双极性晶体管 |
文件: | 总11页 (文件大小:414K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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November 2013
FGA20N120FTD
1200 V, 20 A Field Stop Trench IGBT
Features
General Description
•
•
•
•
•
Field Stop Trench Technology
High Speed Switching
Using advanced field stop trench technology, Fairchild’s 1200V
trench IGBTs offer superior conduction and switching perfor-
mances for soft switching applications. The device can operate
in parallel configuration with exceptional avalanche ruggedness.
This device is designed for induction heating and microwave
oven.
Low Saturation Voltage: VCE(sat) = 1.6 V @ IC = 20 A
High Input Impedance
RoHS Compliant
Applications
•
Induction Heating, Microvewave Oven
C
G
TO-3P
E
G C E
Absolute Maximum Ratings
Symbol
Description
Ratings
1200
25
40
Unit
VCES
VGES
Collector to Emitter Voltage
Gate to Emitter Voltage
V
V
A
A
A
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
@ TC = 25oC
@ TC = 100oC
IC
ICM (1)
20
60
@ TC = 25oC
20
A
Diode Continuous Forward Current
IF
@ TC = 100oC
@ TC = 25oC
@ TC = 100oC
10
298
A
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
W
W
oC
oC
PD
119
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
oC
TL
300
Notes:
1: Repetitive rating, Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT)
RJC(Diode)
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Typ.
Max.
0.42
2.0
Unit
oC/W
oC/W
oC/W
-
-
-
40
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number
Top Mark
Package Packing Method
Reel Size
Tape Width Quantity
FGA20N120FTDTU FGA20N120FTD
TO-3P
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVCES
ICES
Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA
1200
-
-
-
-
1
V
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
-
-
mA
nA
IGES
±250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 20 mA, VCE = VGE
IC = 20 A, VGE = 15 V
3.5
-
5.9
7.5
2
V
V
1.59
VCE(sat)
Collector to Emitter Saturation Voltage TC = 25oC
IC = 20 A, VGE = 15 V,
C = 125oC
-
1.85
-
V
T
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
-
-
-
3080
95
-
-
-
pF
pF
pF
V
CE = 30 V VGE = 0 V,
,
Output Capacitance
f = 1 MHz
Reverse Transfer Capacitance
60
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
79
-
ns
ns
Rise Time
-
Turn-Off Delay Time
Fall Time
143
217
0.42
0.71
1.13
29
-
ns
VCC = 600 V, IC = 20 A,
R
G = 10 , VGE = 15 V,
320
ns
Resistive Load, TC = 25oC
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
-
mJ
mJ
mJ
ns
1.05
-
-
-
-
-
-
-
-
-
-
-
93
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
147
259
0.47
0.86
1.33
137
23
ns
VCC = 600 V, IC = 20 A,
G = 10 , VGE = 15 V,
Resistive Load, TC = 125oC
R
ns
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
mJ
mJ
mJ
nC
nC
nC
V
V
CE = 600 V, IC = 20 A,
GE = 15 V
Qge
Qgc
65
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
2
www.fairchildsemi.com
Electrical Characteristics of the Diode
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
1.3
Max
Unit
T
C = 25oC
C = 125oC
-
-
-
-
-
-
-
-
1.7
VFM
Diode Forward Voltage
IF = 20 A
V
T
1.3
-
-
-
-
-
-
-
TC = 25oC
447
485
48
trr
Diode Reverse Recovery Time
ns
A
TC = 125oC
IF =20 A,
diF/dt = 200 A/s
T
C = 25oC
TC = 125oC
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
50
T
T
C = 25oC
C = 125oC
10.8
12
Qrr
C
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
3
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
180
180
TC = 125oC
20V
TC = 25oC
17V
20V
17V
15V
150
150
15V
120
120
12V
90
90
60
30
0
12V
60
7V
10V
VGE = 6V
8V
10V
7V
VGE = 6V
30
0
9V
8V
9V
0.0
1.5
3.0
4.5
6.0
7.5
9.0
0.0
1.5
3.0
4.5
6.0
7.5
9.0
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Saturation Voltage
Characteristics
Figure 4. Transfer Characteristics
120
120
Common Emitter
VCE = 20V
TC = 25oC
Common Emitter
VGE = 15V
TC = 25oC
TC = 125oC
100
100
TC = 125oC
80
80
60
40
20
0
60
40
20
0
3
6
9
12
15
0
1
2
3
4
5
6
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage,VGE [V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
2.8
2.4
2.0
1.6
1.2
20
Common Emitter
VGE = 15V
Common Emitter
TC = 25oC
40A
16
12
8
20A
40A
4
IC = 10A
20A
IC = 10A
0
0
4
8
12
16
20
25
50
75
100
125
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
4
www.fairchildsemi.com
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
Figure 8. Capacitance Characteristics
GE
20
5000
Common Emitter
TC = 125oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
16
12
8
4000
3000
2000
Coes
20A
12
4
1000
40A
Cres
IC = 10A
0
0
0
4
8
16
20
1
10
30
Gate-Emitter Voltage, VGE [V]
Collector-Emitter Voltage, VCE [V]
Figure 9. Gate charge Characteristics
Figure 10. SOA Characteristics
15
100
Common Emitter
10s
TC = 25oC
12
VCC = 200V
100s
10
1
600V
1ms
9
400V
10 ms
6
3
0
DC
*Notes:
0.1
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0.01
0
30
60
90
120
150
1
10
100
1000
2000
Gate Charge, Qg [nC]
Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
Figure 12. Turn-off Characteristics vs.
Gate Resistance
300
2000
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
1000
TC = 25oC
TC = 125oC
100
td(off)
tr
td(on)
tf
Common Emitter
VCC = 600V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
100
70
10
0
20
40
60
80
100
0
20
40
60
80
100
Gate Resistance, RG []
Gate Resistance, RG []
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
5
www.fairchildsemi.com
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
500
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
TC = 125oC
tr
tf
100
td(off)
100
Common Emitter
VGE = 15V, RG = 10
TC = 25oC
td(on)
TC = 125oC
10
10
10
10
20
30
40
50
20
30
40
50
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
Figure 16. Switching Loss vs. Collector Current
10
4
Common Emitter
Common Emitter
VGE = 15V, RG = 10
VCC = 600V, VGE = 15V
TC = 25oC
TC = 125oC
IC = 20A
TC = 25oC
TC = 125oC
Eoff
Eoff
1
Eon
1
Eon
0.3
0
0.1
10
20
40
60
80
100
20
30
40
50
Gate Resistance, RG []
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
Figure 18. Forward Characteristics
30
80
TJ = 125oC
10
TJ = 25oC
10
1
TC = 125oC
Safe Operating Area
VGE = 15V, TC = 125oC
TC = 25oC
1
0.1
0.0
1
10
100
1000
2000
0.5
1.0
1.5
2.0
Collector-Emitter Voltage, VCE [V]
Forward Voltage, VF [V]
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
6
www.fairchildsemi.com
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
Figure 20. Stored Charge
60
15000
50
12000
200A/s
200A/s
40
9000
30
diF/dt = 100A/s
6000
3000
0
20
10
0
diF/dt = 100A/s
TC = 25oC
20 25
TC = 25oC
20 25
5
10
15
5
10
15
Forward Current, IF [A]
Forward Current, IF [A]
Figure 21.Reverse Recovery Time
1000
800
diF/dt = 100A/s
600
200A/s
400
200
TC = 25oC
20 25
0
5
10
15
Forward Current, IF [A]
Figure 22.Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.05
0.02
PDM
0.01
0.01
t1
single pulse
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
7
www.fairchildsemi.com
Mechanical Dimensions
Figure 23. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT3P0-003
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
8
www.fairchildsemi.com
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Datasheet contains the design specifications for product development. Specifications
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Rev. I66
©2008 Fairchild Semiconductor Corporation
FGA20N120FTD Rev. C1
9
www.fairchildsemi.com
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