FGA25N120ANTDTU-F109 [ONSEMI]
IGBT，1200V，25A，NPT 沟槽;
| 型号： | FGA25N120ANTDTU-F109 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，1200V，25A，NPT 沟槽 栅 双极性晶体管 |
| 文件： | 总10页 (文件大小：1583K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
Description
•
NPT Trench Technology, Positive Temperature Coefficient
Using ON Semiconductor's proprietary trench design and
advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high
avalanche ruggedness and easy parallel operation. This
device is well suited for the reso-nant or soft switching
application such as induction heating, microwave oven.
•
Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C
•
•
Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C
Extremely Enhanced Avalanche Capability
Applications
•
Induction Heating, Microwave Oven
C
G
TO-3P
G
C
E
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Unit
V
VCES
VGES
Collector-Emitter Voltage
Gate-Emitter Voltage
1200
± 20
V
Collector Current
@ TC
=
25°C
50
A
IC
ICM (1)
IF
IFM
PD
Collector Current
@ TC = 100°C
25
90
A
Pulsed Collector Current
A
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
@ TC = 25°C
@ TC = 100°C
50
A
25
A
150
A
@ TC
=
25°C
312
W
W
°C
°C
@ TC = 100°C
125
TJ
-55 to +150
-55 to +150
Tstg
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
TL
300
°C
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
Max.
0.4
Unit
--
--
--
°C/W
°C/W
°C/W
2.0
Thermal Resistance, Junction-to-Ambient
40
Publication Order Number:
FGA25N120ANTDTU/D
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Package Marking and Ordering Information
Packing
Method
Part Number
Top Mark
Package
Reel Size Tape Width Quantity
FGA25N120ANTDTU-F109 FGA25N120ANTDTU
TO-3PN
Tube
N/A
N/A
30
Electrical Characteristics of the IGBT
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
--
--
--
--
3
mA
nA
± 250
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 25 mA, VCE = VGE
3.5
--
5.5
2.0
7.5
--
V
V
V
I
C = 25 A, VGE = 15 V
Collector to Emitter
Saturation Voltage
IC = 25 A, VGE = 15 V,
TC = 125°C
--
2.15
--
VCE(sat)
IC = 50 A, VGE = 15 V
--
2.65
--
V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
3700
130
80
--
--
--
pF
pF
pF
VCE = 30 V VGE = 0 V,
f = 1 MHz
,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
50
60
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
190
100
4.1
0.96
5.06
50
ns
VCC = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
Inductive Load, TC = 25°C
ns
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ
mJ
mJ
ns
60
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
200
154
4.3
1.5
5.8
200
15
ns
V
R
CC = 600 V, IC = 25 A,
G = 10Ω, VGE = 15 V,
ns
Inductive Load, TC = 125°C
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
mJ
mJ
mJ
nC
nC
nC
VCE = 600 V, IC = 25 A,
Qge
Qgc
V
GE = 15 V
100
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2
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
TC
TC = 125°C
TC 25°C
TC = 125°C
TC 25°C
TC = 125°C
TC 25°C
TC = 125°C
=
25°C
--
--
--
--
--
--
--
--
2.0
2.1
3.0
--
VFM
Diode Forward Voltage
IF = 25 A
V
=
235
300
27
350
--
trr
Diode Reverse Recovery Time
ns
A
=
40
--
Diode Peak Reverse Recovery Cur- IF = 25 A
rent
Irr
diF/dt = 200 A/μs
31
=
3130
4650
4700
--
Qrr
Diode Reverse Recovery Charge
nC
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3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
180
120
20V
17V
15V
TC = 25°C
12V
Common Emitter
160
140
120
100
80
VGE = 15V
100
= 25°C
10V
TC
TC = 125°C
80
60
40
20
0
9V
8V
60
40
7V
20
VGE = 6V
0
0
2
4
6
8
10
0
1
2
3
4
5
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
3.0
2.5
2.0
1.5
20
Common Emitter
VGE = 15V
Common Emitter
TC = -40°C
16
12
8
40A
IC = 25A
40A
25A
4
IC = 12.5A
0
25
50
75
100
125
0
4
8
12
16
20
Case Temperature, TC [°C]
Gate-Emitter Voltage, VGE [V]
Figure 5. Saturation Voltage vs. V
Figure 6. Saturation Voltage vs. V
GE
GE
20
20
Common Emitter
Common Emitter
TC = 25°C
TC = 125°C
16
12
8
16
12
8
40A
25A
40A
25A
4
4
IC = 12.5A
IC = 12.5A
4
0
0
0
4
8
12
16
20
0
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
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4
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs. Gate
Resistance
5000
Common Emitter
VGE = 0V, f = 1MHz
4500
4000
3500
3000
2500
2000
1500
1000
500
Ciss
TC = 25°C
100
tr
td(on)
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
Coss
Crss
TC = 25°C
TC = 125°C
0
10
1
10
Collector-Emitter Voltage, VCE [V]
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
VCC = 600V, VGE = ±15V
IC = 25A
td(off)
TC = 25°C
10
TC = 125°C
Eon
100
tf
Common Emitter
VCC = 600V, VGE = ±15V
Eoff
IC = 25A
1
TC = 25°C
TC = 125°C
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
tr
td(off)
100
100
tf
td(on)
Common Emitter
VGE = ±15V, RG = 10Ω
TC = 25°C
TC = 125°C
10
20
30
40
50
10
20
30
Collector Current, IC [A]
40
50
Collector Current, IC [A]
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5
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
16
Common Emitter
Common Emitter
VGE = ±15V, RG = 10Ω
RL = 24Ω
14
Eon
TC = 25°C
TC = 25°C
10
TC = 125°C
12
600V
400V
Vcc = 200V
10
8
Eoff
1
6
4
2
0.1
0
10
20
30
40
50
0
20
40
60
80 100 120 140 160 180 200
Collector Current, IC [A]
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
100
Ic MAX (Pulsed)
100
50μs
Ic MAX (Continuous)
100μs
10
1ms
DC Operation
10
1
Single Nonrepetitive
Pulse TC = 25°C
0.1
0.01
Curves must be derated
linearly with increase
in temperature
Safe Operating Area
VGE = 15V, TC = 125°C
1
0.1
1
10
100
1000
1
10
100
1000
Collector - Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
10
0.5
0.1
0.01
1
0.2
0.1
Pdm
0.05
t1
0.02
0.01
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
single pulse
× Zthjc + T
C
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
RectangularPulse Duration [sec]
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6
Typical Performance Characteristics (Continued)
Figure 18. Forward Characteristics
Figure 19. Reverse Recovery Current
30
50
diF/dt = 200A/μs
25
10
20
TJ = 125° Χ)
15
diF/dt = 100A/μs
1
TJ = 25° Χ)
10
5
TC = 125° Χ)
TC
1.6
Forward Voltage , VF [V]
= 25° Χ)
0
0.1
5
10
15
20
25
0.0
0.4
0.8
1.2
2.0
Forward Current , IF [A]
Figure 20. Stored Charge
Figure 21. Reverse Recovery Time
4000
300
diF/dt = 100A/μs
3000
diF/dt = 200A/μs
200
diF/dt = 200A/μs
2000
1000
0
diF/dt = 100A/μs
100
0
5
10
15
20
25
5
10
15
20
25
Forward Current , IF [A]
Forward Current , IF [A]
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7
Mechanical Dimensions
Figure 22. TO3PN, 3-Lead, Plastic, EIAJ SC-65
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
www.onsemi.com
8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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❖
相关型号：
FGA25N120ANTDTU_F109
1200V, 25A, NPT Trench IGBT, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL
FAIRCHILD
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