FDPF035N06B-F152 [ONSEMI]
N-Channel PowerTrench® MOSFET;
| 型号： | FDPF035N06B-F152 |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel PowerTrench® MOSFET 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：2172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2017 年9 月
FDPF035N06B
®
N 沟道PowerTrench MOSFET
60 V、88 A、3.5 m
特性
•
说明
RDS(on) =2.91 m （典型值）@VGS = 10 V, ID = 88 A
此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越
开关性能而定制的。
• 低FOM RDS(on)*QG
• 低反向恢复电荷，Qrr
• 软反向恢复体二极管
• 可实现高效同步整流
• 快速开关速度
应用
• 用于ATX/ 服务器/ 电信PSU 的同步整流
• 电池保护电路
•
100% 经过UIL 测试
• 符合RoHS 标准
• 电机驱动和不间断电源
• 可再生系统
D
G
G
D
S
TO-220F
S
最大绝对额定值 TC =25°C 除非另有说明。
FDPF035N06B-F152
符号
参数
单位
VDSS
VGSS
60
±20
V
漏极－源极电压
栅极－源极电压
V
88
- 连续（TC=25°C，硅限制）
- 连续（TC=100°C，硅限制）
- 脉冲
ID
A
漏极电流
62
IDM
352
A
mJ
漏极电流
（说明1）
（说明2）
（说明3）
EAS
dv/dt
600
单脉冲雪崩能量
二极管恢复dv/dt 峰值
6.0
V/ns
W
(TC = 25°C)
46.3
0.31
-55 至+175
300
PD
功耗
W/°C
°C
- 降低至25°C 以上
TJ，TSTG
工作和存储温度范围
TL
°C
用于焊接的最大引线温度，距离外壳1/8"，持续5 秒
热性能
FDPF035N06B-F152
符号
RJC
参数
结至外壳热阻最大值
单位
3.24
62.5
°C/W
RJA
结至环境热阻最大值
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1
© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
封装标识与定购信息
器件编号
顶标
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FDPF035N06B-F152
FDPF035N06B
TO-220F
不适用
50 个
电气特性TC =25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 A, VGS = 0 V
60
-
-
-
-
V
漏极－源极击穿电压
BVDSS
/ TJ
击穿电压温度系数
ID=250 A，温度参考25°C
0.03
V/°C
IDSS
IGSS
V
DS = 48 V, VGS = 0 V
GS = ±20 V, VDS = 0 V
-
-
-
-
1
A
零栅极电压漏极电流
V
±100
nA
栅极- 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
2
-
-
4
3.5
-
V
m
S
栅极阈值电压
VGS = 10 V, ID = 88 A
2.91
176
漏极至源极静态导通电阻
正向跨导
V
DS = 10 V, ID = 88 A
-
动态特性
Ciss
-
-
-
-
-
-
-
-
-
-
-
6035
1685
55
8030
pF
pF
pF
pF
nC
nC
nC
V
输入电容
V
DS = 30 V, VGS = 0 V,
Coss
2240
输出电容
f = 1 MHz
Crss
-
-
反向传输电容
Coss(er)
Qg(tot)
Qgs
VDS = 30 V, VGS = 0 V
2619
76
能量相关输出电容
10 V 的栅极电荷总量
栅极- 源极栅极电荷
栅极- 漏极“ 米勒” 电荷
栅极平台电压
99
-
VDS = 30 V, ID = 100 A,
V
29
GS = 10 V
Qgd
12
-
Vplateau
Qsync
Qoss
ESR
5.2
-
（说明4）
VDS = 0 V, ID = 50 A
DS = 30 V, VGS = 0 V
67.3
92.4
2.0
-
nC
nC
总栅极电荷同步
输出电荷
V
-
f = 1 MHz
-
等效串联电阻(G-S)
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
32
33
56
23
74
76
ns
ns
ns
ns
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
VDD = 30 V, ID = 100 A,
VGS = 10 V, RG = 4.7
122
56
（说明4）
漏极- 源极二极管特性
IS
-
-
-
-
-
-
-
88
352
1.25
-
A
A
漏极- 源极二极管最大正向连续电流
漏极- 源极二极管最大正向脉冲电流
漏极- 源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 88 A
-
V
71
78
ns
nC
V
GS = 0 V, ISD = 100 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1. 重复额定值：脉冲宽度受限于最大结温。
2. L = 3 mH，I = 20 A，开始T = 25°C。
AS
J
3. I 100 A，di/dt 200 A/s，V BV
，开始T = 25°C。
J
SD
DD
DSS
4. 本质上独立于工作温度的典型特性。
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2
© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
典型性能特征
图1. 导通区域特性
图2. 传输特性
400
200
*Notes:
1. VDS = 10V
100
10
1
2. 250s Pulse Test
100
25oC
-55oC
175oC
VGS = 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
10
2
*Notes:
1. 250s Pulse Test
2. TC = 25oC
0.1
1
10
2
3
4
5
6
7
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系
图4. 体二极管正向电压变化与源极电流和温度的关系
3.5
200
100
VGS = 10V
3.0
175oC
25oC
VGS = 20V
10
2.5
*Notes:
1. VGS = 0V
*Note: TC = 25oC
200 250 300
ID, Drain Current [A]
2. 250s Pulse Test
2.0
1
0.2
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage [V]
图5. 电容特性
图6. 栅极电荷特性
10
10000
Ciss
VDS = 12V
8
6
4
2
0
V
V
DS = 30V
DS = 48V
1000
100
10
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 100A
60 80 90
0.1
1
10
60
0
20
40
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
典型性能特征（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
1.8
1.10
1.6
1.4
1.2
1.0
1.05
1.00
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.8
2. ID = 250A
2. ID = 88A
0.6
-100
0.90
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区
图10. 最大漏极电流与壳温的关系
1000
100
VGS = 10V
100
80
60
40
20
100s
1ms
10
10ms
100ms
DC
Operation in This Area
is Limited by R DS(on)
1
SINGLE PULSE
T
T
C = 25oC
J = 175oC
0.1
RJC = 3.24oC/W
R
JC = 3.24oC/W
0.01
0
25
0.1
1
10
100
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. 输出电容(Eoss) 与漏源极电压的关系
图12. 非箝位电感开关能力
3.0
200
100
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25 o
C
TJ = 150 o
C
10
1
0.001 0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
VDS, Drain to Source Voltage [V]
tAV, TIME IN AVALANCHE (ms)
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© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
典型性能特征（接上页）
图13. 瞬态热响应曲线
4
1
0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
Single pulse
t2
*Notes:
0.1
1. ZJC(t) = 3.24oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.02
10-5
10-4
10-3
10-2
10-1
1
t
，矩形脉冲持续时间[ 秒]
1
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© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
I
= 常量
G
图14. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图15. 阻性开关测试电路与波形
VGS
图16. 非箝位电感开关测试电路与波形
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© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图17. 二极管恢复dv/dt 峰值测试电路与波形
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© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
VCC
Driver
VGS
(Driver)
t
t
VGS
(D UT)
10V
VDD
VR
G
DUT
RG
1
Qsync
t dt
V
RG
VGS
RG
图18. 总栅极电荷Qsync 测试电路与波形
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© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
机械尺寸
图19. TO220 模塑3 引脚Full Pack，EIAJ SC91，Takcheong
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件，尤其是其中涉及飞兆公司
产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
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© 2013 飞兆半导体公司
FDPF035N06B Rev. 1
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