FDPF041N06BL1 [ONSEMI]
N 沟道 PowerTrench® MOSFET 60 V, 77 A, 4.1 mΩ;
| 型号： | FDPF041N06BL1 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 60 V, 77 A, 4.1 mΩ 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：699K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2015 年4 月
FDPF041N06BL1
®
N 沟道SuperFET II MOSFET
60 V, 77 A, 4.1 mΩ
特性
•
描述
RDS(on) = 3.5 mΩ ( 典型值)@VGS = 10 V, ID = 77 A
此N-沟道MOSFET 采用飞兆半导体® 先进的Power Trench® 工
艺生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓
越开关性能而定制的。
• 低FOM RDS(on)*QG
• 低反向恢复电荷，Qrr
• 软反向恢复体二极管
• 可实现高效同步整流
• 快速开关速度
应用
• 用于ATX/ 服务器/ 电信PSU 的同步整流
• 电池保护电路
•
100% 经过UIL 测试
• 电机驱动和不间断电源
• 可再生系统
• 符合RoHS 标准
D
G
TO-220F
G D
S
S
MOSFET 最大额定值 TC = 25°C 除非另有说明*
FDPF041N06BL1
符号
参数
单位
VDSS
VGSS
60
±20
77
V
漏极－源极电压
栅极－源极电压
V
- 连续（TC = 25°C，硅限制）
- 连续（TC=100°C，硅限制）
- 脉冲
ID
A
漏极电流
55
IDM
308
365
6.0
A
mJ
漏极电流
（注1）
（注2）
（注3）
EAS
dv/dt
单脉冲雪崩能量
二极管恢复dv/dt 峰值
V/ns
W
(TC = 25°C)
44.1
0.29
PD
功耗
W/°C
°C
- 高于25°C 的功耗系数
TJ, TSTG
TL
工作和存储温度范围
-55 至+175
300
°C
用于焊接的最高引脚温度，距离外壳1/8”，持续5 秒
热性能
FDPF041N06BL1
符号
RθJC
参数
结至外壳热阻最大值
单位
3.4
°C/W
RθJA
62.5
结至环境热阻最大值
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
1
www.fairchildsemi.com
封装标识与定购信息
器件标识
器件
封装
包装类型
塑料管
数量
FDPF041N06BL1
FDPF041N06BL1
TO-220F
50
电气特性TC = 25°C 除非另有说明
符号
参数
测试条件
最小值 典型值 最大值
单位
关断特性
BVDSS
ID = 250 μA, VGS = 0 V
ID = 250 μA, 参考25°C
60
-
-
-
-
V
漏极－源极击穿电压
击穿电压温度系数
ΔBVDSS
ΔTJ
0.03
V/°C
IDSS
VDS = 48 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
-
-
-
-
1
μA
零栅极电压漏极电流
栅极－体漏电流
IGSS
±100
nA
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 77 A
VDS = 10 V, ID = 77 A
2
-
-
4
4.1
-
V
mΩ
S
栅极阈值电压
3.5
125
漏极至源极静态导通电阻
正向跨导
-
动态特性
Ciss
-
-
-
-
-
-
-
-
-
-
4280
1050
23
5690
pF
pF
pF
pF
nC
nC
nC
V
输入电容
VDS = 30 V, VGS = 0 V
f = 1 MHz
Coss
1400
输出电容
Crss
-
-
反向传输电容
Coss(er)
Qg(tot)
Qgs
VDS = 30 V, VGS = 0 V
1787
53
能量相关输出电容
10 V 的栅极电荷总量
栅极－源极栅极电荷
栅极－漏极“ 米勒” 电荷
栅极平台电压
69
-
VDS = 30 V, ID = 100 A
23
V
V
GS = 10 V
Qgd
8
-
Vplateau
Qsync
Qoss
5.7
-
（注4）
（注5）
48.6
63.8
-
nC
nC
DS = 0 V, ID = 50 A
总栅极电荷同步
输出电荷
VDS = 30 V, VGS = 0 V
-
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
29
22
38
11
68
54
86
32
-
ns
ns
ns
ns
Ω
导通延迟时间
开通上升时间
关断延迟时间
关断下降时间
等效串联电阻(G-S)
VDD = 30 V, ID = 100 A
V
GS = 10 V, RGEN = 4.7 Ω
（注4）
ESR
f = 1MHz
0.8
漏极－源极二极管特性
IS
-
-
-
-
-
-
-
77
308
1.25
-
A
A
漏极－源极二极管最大正向连续电流
漏极－源极二极管最大正向脉冲电流
漏极－源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 77 A
-
V
65
63
ns
nC
VGS = 0 V, ISD = 100 A
dIF/dt = 100 A/μs
Qrr
-
反向恢复电荷
注：
1. 重复额定值：脉冲宽度受限于最大结温
2. L = 3 mH, I = 15.6 A, 开始于T = 25°
AS
J
3. I ≤ 100 A, di/dt ≤ 200 A/μs, V ≤ BV
, 开始于T = 25°C
J
SD
DD
DSS
4. 本质上独立于操作温度的典型特性
5. 见第8 页测试电路
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
www.fairchildsemi.com
2
典型性能特征
图1. 导通区域特性
图2. 传输特性
300
200
*Notes:
1. VDS = 10V
100
10
1
100
2. 250μs Pulse Test
25oC
-55oC
175oC
VGS = 15.0V
10
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
1
10
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
图3. 导通电阻变化与漏极电流和栅极电压的关系 图4. 体二极管正向电压变化与源极电流的关系
和温度的关系
4.5
4.0
3.5
3.0
2.5
2.0
200
100
VGS = 10V
VGS = 20V
175oC
25oC
10
*Notes:
1. VGS = 0V
*Note: TC = 25oC
200 250 300
2. 250μs Pulse Test
1
0.2
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图5. 电容特性
10000
图6. 栅极电荷特性
10
Ciss
VDS = 12V
VDS = 30V
8
VDS = 48V
Coss
1000
6
4
2
0
*Note:
1. VGS = 0V
100
10
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
oss
rss
= C
gd
*Note: ID = 100A
40
0
20
60
0.1
1
10
60
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
www.fairchildsemi.com
3
典型性能特征（接上页）
图7. 击穿电压变化与温度的关系
图8. 导通电阻变化与温度的关系
1.10
1.8
1.6
1.4
1.2
1.0
1.05
1.00
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.8
2. ID = 250μA
2. ID = 77A
0.90
-100
0.6
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
图9. 最大安全工作区与壳温的关系
图10. 最大漏极电流
100
1000
VGS = 10V
100μs
80
60
40
20
0
100
1ms
10
10ms
Operation in This Area
is Limited by R DS(on)
100ms
DC
1
SINGLE PULSE
T
C = 25oC
TJ = 175oC
θJC = 3.4oC/W
0.1
R
θJC = 3.4oC/W
R
0.01
25
50
75
100
125
150
175
0.1
1
10
100
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
图11. Eoss 与漏源极电压的关系
图12. 非箝位电感开关能力
100
2.0
1.5
1.0
0.5
0.0
TJ = 25 o
C
10
TJ = 150 o
C
1
0.001 0.01
0.1
1
10
100
1000
0
10
20
30
40
50
60
tAV, TIME IN AVALANCHE (ms)
VDS, Drain to Source Voltage [V]
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
www.fairchildsemi.com
4
典型性能特征（接上页）
图13. 瞬态热响应曲线
4
1
0.5
0.2
0.1
0.05
0.1
0.01
0.02
0.01
PDM
t1
Single pulse
t2
*Notes:
1. ZθJC(t) = 3.4oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
10-5
10-4
10-3
Rectangular Pulse Duration [sec]
10-2
10-1
1
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
www.fairchildsemi.com
5
栅极电荷测试电路与波形
D
G
S
阻性开关测试电路与波形
非箝位感性开关测试电路与波形
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
www.fairchildsemi.com
6
二极管恢复dv/dt 峰值测试电路与波形
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
www.fairchildsemi.com
7
总栅极电荷同步测试电路与波形
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
8
www.fairchildsemi.com
机械尺寸
图17. TO220 模塑3 引脚Full Pack，EIAJ SC91，Takcheong
封装图纸作为一项服务，提供给考虑Fairchild 元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和/ 或
日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆半导体全球范围内的条款与条件，尤其是其中涉及飞兆半导
体产品保修的部分。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TF220-0A3
* 前/ 后侧隔离电压：AC 2500V
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
www.fairchildsemi.com
9
商标
以下注册及未注册的商标或服务标志均为飞兆半导体公司和/ 或其全球子公司所有，且并非所有该类商标的完整目录。
AccuPower™
Awinda®
F-PFS™
OPTOPLANAR®
®
®*
FRFET®
AX-CAP®*
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
BitSiC™
PowerTrench®
PowerXS™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Programmable Active Droop™
QFET®
TINYOPTO™
TinyPower™
TinyPWM™
GTO™
QS™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
Quiet Series™
RapidConfigure™
™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
MicroPak™
SMART START™
Solutions for Your Success™
SPM®
®
MicroPak2™
MillerDrive™
MotionMax™
MotionGrid®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
STEALTH™
SuperFET®
MTi®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
MTx®
FAST®
FastvCore™
FETBench™
FPS™
MVN®
mWSaver®
OptoHiT™
Xsens™
仙童 ™
OPTOLOGIC®
* 商标为System General Corporation 所有，授权飞兆半导体公司使用。
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飞兆半导体公司为提高产品的可靠性、功能或设计，保留对其作出变动的权利，恕不另行通知。访问我们的在线网页 HTTP://WWW.FAIRCHILDSEMI.COM，可
以获取最新的产品数据和产品信息。对于本文描述的任何产品和电路在应用中所出现的问题，飞兆半导体公司不承担任何责任；不转让其专利权下的任何许可证，
也不转让其他权利。本文中的各项规格说明特定用于本文所述之产品，其保修条款仅用于本文相关产品，不适用于飞兆半导体全球销售的其他产品。
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(b) 支持或维持生命，以及 (c) 即使依照标示中的使用说明进行正确操
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2. 关键器件是指生命支持设备或系统中，由于该器件的失效会导致整个生
命支持设备或系统的失效，或是影响其安全性及使用效果。
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牌声誉损失、性能不合格、应用失败、生产成本增加和制造延误增多等。飞兆半导体正在采取强有力的措施，保护自己并防止客户购买到仿造零部件。飞兆半
导体强烈鼓励客户直接从飞兆半导体或其网页所列国家 / 地区的授权分销商处购买飞兆半导体的产品。客户直接从飞兆半导体公司或从其授权分销商购买到的
产品都是正品。这些产品具有全面的可追溯性，符合飞兆半导体的质量标准，便于操作和存储，并提供飞兆半导体完整、最新的技术和产品信息的获取途径。
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修或其他援助。飞兆半导体致力于打击这一全球性问题，并鼓励客户尽力通过直接购买或从授权分销商购买的方式阻止产品仿造行为。
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术语定义
数据表标识
预告
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数据表包含了产品开发的设计规格。具体参数可进行改动，且无需做出相应通知。
该数据表包含了初始数据，补充数据随后发布。飞兆半导体保留有在任何时间为改进设计
而做出更改，且无需另行通知的权力。
初级
样品
该数据表包含了最终的技术规范。飞兆半导体保留在任何时间为改进设计而做出更改，且
无需另行通知的权力。
无需标识
废弃
量产
停产
数据手册包含飞兆半导体已停产产品的规格数据。该数据表信息仅供参考。
Rev. I72
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10
© 2014 飞兆半导体公司
FDPF041N06BL1 Rev.C0
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相关型号：
FDPF10N50UT
Power Field-Effect Transistor, 8A I(D), 500V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FAIRCHILD
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