FDPF035N06B-F154 [ONSEMI]
N-Channel PowerTrench® MOSFET;型号: | FDPF035N06B-F154 |
厂家: | ONSEMI |
描述: | N-Channel PowerTrench® MOSFET |
文件: | 总10页 (文件大小:364K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MOSFET – N-Channel,
POWERTRENCH)
60 V, 88 A, 3.5 mW
FDPF035N06B-F154
Description
www.onsemi.com
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been tailored to
minimize the on−state resistance while maintaining superior switching
performance.
V
R
MAX
I MAX
D
DSS
DS(ON)
60 V
3.5 mW @ 10 V
88 A
Features
D
• R
= 2.91 mW (Typ.)@ V = 10 V, I = 88 A
GS D
DS(on)
• Low FOM R *Q
DS(on) G
• Low Reverse Recovery Charge, Q
• Soft Reverse Recovery Body Diode
rr
G
• Enables Highly Efficiency in Synchronous Rectification
• Fast Switching Speed
• 100% UIL Tested
S
• These Devices are Pb−Free and are RoHS Compliant
MOSFET
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Renewable System
G
D
S
TO−220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FDPF
035N06B
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FDPF035N06B
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
FDPF035N06B−F154/D
December, 2020 − Rev. 0
FDPF035N06B−F154
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
60
Unit
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
DSS
GSS
V
20
V
I
D
− Continuous (T = 25°C, Silicon Limited)
88
A
C
− Continuous (T = 100°C, Silicon Limited)
62
C
I
Drain Current
− Pulsed (Note 1)
352
A
mJ
DM
E
Single Pulsed Avalanche Energy (Note 2)
Peak Diode Recovery dv/dt (Note 3)
600
AS
dv/dt
6.0
V/ns
W
P
Power Dissipation
(T = 25°C)
C
46.3
0.31
−55 to +175
300
D
− Derate Above 25°C
W/°C
°C
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 Seconds
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. L = 3 mH, I = 20 A, starting T = 25°C.
AS
J
3. I ≤ 100 A, di/dt ≤ 200 A/ms, V ≤ BV
, starting T = 25°C.
SD
DD
DSS
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.24
Unit
R
R
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
_C/W
_C/W
q
JC
JA
62.5
q
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Shipping
50 Units / Tube
FDPF035N06B−F154
FDPF035N06B
TO−220F
(Pb−Free)
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2
FDPF035N06B−F154
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
60
−
−
−
V
DSS
D
GS
DBV
/ DT
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25_C
−
0.03
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V
V
= 48 V, V = 0 V
−
−
−
−
1
mA
DSS
DS
GS
I
=
20 V, V = 0 V
100
nA
GSS
GS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 250 mA
2
−
−
−
4
3.5
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 88 A
2.91
176
D
g
FS
= 20 V, I = 88 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 30 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
−
−
−
6035
1685
55
8030
pF
pF
pF
iss
DS
GS
C
Output Capacitance
2240
−
oss
C
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Plateau Voltage
rss
C
V
V
= 30 V, V = 0 V
2619
76
−
oss(er)
DS
GS
Q
= 30 V, I = 100 A, V = 10 V
99
−
nC
nC
nC
V
g(tot)
DS
D
GS
(Note 4)
Q
29
gs
Q
12
−
gd
V
5.2
−
plateau
Q
Total Gate Charge Sync.
Output Charge
V
V
= 0 V, I = 50 A
67.3
92.4
2.0
−
nC
nC
W
sync
DS
D
Q
= 30 V, V = 0 V
−
oss
DS
GS
ESR
Equivalent Series Resistance (G−S)
f = 1 MHz
−
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
= 30 V, I = 100 A, V = 10 V,
−
−
−
−
32
33
56
23
74
76
ns
ns
ns
ns
d(on)
DD
g
D
GS
R = 4.7 W
t
r
(Note 4)
t
122
56
d(off)
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
−
88
352
1.25
−
A
A
S
I
SM
V
SD
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
V
= 0 V, I = 88 A
−
V
GS
SD
t
rr
= 0 V, I = 100 A,
71
78
ns
nC
GS
SD
dI /dt = 100 A/ms
F
Q
Reverse Recovery Charge
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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3
FDPF035N06B−F154
TYPICAL PERFORMANCE CHARACTERISTICS
200
400
100
V
= 10 V
DS
250 ms Pulse Test
100
10
1
25°C
175°C
−55°C
V
=15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
GS
10
2
250 ms Pulse Test
= 25°C
T
C
0.1
1
10
300
60
2
3
GS
4
5
6
7
V
DS
, Drain−Source Voltage (V)
V
, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
200
100
V
= 0 V
T
C
= 25°C
GS
250 ms Pulse Test
V
V
= 10 V
= 20 V
GS
175°C
25°C
GS
10
1
0
50
100
150
200
250
0.2
0.4
, Body Diode Forward Voltage (V)
SD
0.6
0.8
1.0
1.2
1.4
I , Drain Current (A)
D
V
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
10
10000
C
iss
V
V
V
= 12 V
= 30 V
= 48 V
DS
DS
DS
8
6
4
2
0
1000
100
10
C
oss
V
= 0 V
GS
f = 1 MHz
C
C
C
= C + C (C = shorted)
iss
gs gd ds
C
rss
= C + C
oss
rss
ds
gd
= C
I
D
= 100 A
gd
0
20
40
60
80 90
0.1
1
10
Q , Total Gate Charge (nC)
V
DS
, Drain−Source Voltage (V)
g
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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4
FDPF035N06B−F154
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
1.10
1.05
1.00
1.8
V
I
= 0 V
= 250 mA
V
I
= 10 V
= 88 A
GS
GS
D
D
1.6
1.4
1.2
1.0
0.8
0.6
0.95
0.90
−100 −50
50
100
150
200
100
60
0
−100 −50
50
100
150
200
0
T , Junction Temperature (°C)
T , Junction Temperature (°C)
J
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
1000
100
V
= 10 V
GS
100
80
60
40
20
0
100 ms
10
1 ms
Operation in this Area
is Limited by R
10 ms
100 ms
DS(on)
1
0.1
SINGLE PULSE
= 25°C
DC
T
C
T = 175°C
J
R
= 3.24°C/W
R
= 3.24°C/W
qJC
q
JC
0.01
25
50
75
100
125
150
175
0.1
1
10
V
DS
, Drain−Source Voltage (V)
T , Case Temperature (°C)
C
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
200
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
T = 150°C
J
T = 25°C
J
10
1
0
10
20
30
40
50
0.001 0.01
0.1
t , Time in Avalanche (ms)
AV
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
Figure 11. EOSS vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
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5
FDPF035N06B−F154
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
4
1
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t1
Single Pulse
t2
0.1
Z
q
(t) = 3.24°C/W Max.
Duty Factor, D = t / t
JC
1
2
T
JM
− T = P
x Z (t)
q
DM JC
C
0.02
10−5
10−4
10−3
10−2
10−1
1
t, Rectangular Pulse Duration (s)
Figure 13. Transient Thermal Response Curve
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6
FDPF035N06B−F154
V
GS
R
Q
g
L
V
DS
Q
Q
gd
gs
V
GS
DUT
I
G
= const.
Charge
Figure 14. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
t
d(off)
t
r
t
f
d(on)
t
on
t
off
Figure 15. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I
D
(t)
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FDPF035N06B−F154
+
DUT
V
DS
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
• dv/dt controlled by R
G
• I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 17. Peak Recovery dv/dt Test Circuit & Waveforms
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPACK, 3−LEAD (ULTRA NARROW LEAD)
CASE 221BN
ISSUE A
DATE 07 MAY 2021
GENERIC
MARKING DIAGRAM*
XXXX = Specific Device Code
*This information is generic. Please refer to
XXXXXXXXXX
A
Y
= Assembly Location
= Year
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
G
AYWW
WW = Work Week
G
= Pb−Free Package
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON01135H
TO−220 FULLPACK, 3−LEAD (ULTRA NARROW LEAD)
PAGE 1 OF 1
ON Semiconductor and
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