FDMS8350L [ONSEMI]
40V N沟道PowerTrench® MOSFET;型号: | FDMS8350L |
厂家: | ONSEMI |
描述: | 40V N沟道PowerTrench® MOSFET 开关 脉冲 光电二极管 晶体管 |
文件: | 总8页 (文件大小:344K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
March 2015
FDMS8350L
N-Channel PowerTrench® MOSFET
40 V, 290 A, 0.85 mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A
Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A
Advanced Package and Silicon combination for low rDS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
RoHS Compliant
Bottom
Top
Pin 1
S
S
D
D
D
D
S
Pin 1
S
G
S
S
G
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
40
Units
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
V
V
±20
TC = 25 °C
TC = 100 °C
TA = 25 °C
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
290
183
ID
A
-Continuous
47
-Pulsed
1737
800
EAS
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
mJ
W
TC = 25 °C
TA = 25 °C
113
PD
(Note 1a)
2.7
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to + 150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.1
45
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS8350L
FDMS8350L
Power 56
3000 units
©2014 Fairchild Semiconductor Corporation
FDMS8350L Rev.1.8
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
40
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 μA, referenced to 25 °C
25
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
μA
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1
1.5
-6
3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 μA, referenced to 25 °C
GS = 10 V, ID = 47 A
mV/°C
V
0.71
0.91
0.94
260
0.85
1.2
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 38 A
mΩ
VGS = 10 V, ID = 47 A, TJ = 125 °C
VDS = 5 V, ID = 47 A
1.2
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
12500 17500
pF
pF
pF
Ω
VDS = 20 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3430
136
1
4800
190
3
0.1
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
29
22
83
18
173
80
30
18
47
36
ns
ns
VDD = 20 V, ID = 47 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
133
33
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
242
113
nC
nC
nC
nC
Qg
VDD = 20 V,
D = 47 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2.1 A
(Note 2)
(Note 2)
0.65
0.76
72
1.2
1.3
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 47 A
trr
Reverse Recovery Time
116
103
ns
IF = 47 A, di/dt = 100 A/μs
Qrr
Reverse Recovery Charge
64
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is determined by the user's board design.
θJA
θCA
b. 115 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 45 °C/W when mounted on a
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 800 mJ is based on starting T = 25 °C, L = 1 mH, I = 40 A, V = 36 V, V = 10 V. 100% test at L = 0.1 mH, I = 86 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2014 Fairchild Semiconductor Corporation
FDMS8350L Rev.1.8
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
300
5
4
3
2
1
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
240
VGS = 4 V
VGS = 3 V
VGS = 3.5 V
180
VGS = 3.5 V
120
V
= 4 V
GS
VGS = 3 V
60
VGS = 4.5 V
180
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
2.0
0
60
120
240
300
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
Figure 1. On Region Characteristics
4
1.6
ID = 47 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
ID = 47 A
V
3
2
1
0
TJ = 125 o
C
TJ = 25 o
C
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
300
1000
PULSE DURATION = 80 μs
VGS = 0 V
TJ = 150 o
DUTY CYCLE = 0.5% MAX
100
10
240
180
120
60
C
VDS = 5 V
TJ = 25 oC
TJ = 150 o
C
1
TJ = 25 o
C
0.1
TJ = -55 o
C
0.01
TJ = -55 o
C
0
0.001
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2014 Fairchild Semiconductor Corporation
FDMS8350L Rev.1.8
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
50000
10000
ID = 47 A
Ciss
VDD = 15 V
8
VDD = 20 V
Coss
6
VDD = 25 V
1000
100
10
4
2
0
Crss
f = 1 MHz
GS = 0 V
V
0
25
50
75
100
125
150
175
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
300
240
180
120
60
500
RθJC = 1.1 oC/W
100
10
1
TJ = 25 oC
TJ = 100 o
VGS = 10 V
C
VGS = 4.5 V
TJ = 125 o
C
0
25
50
75
100
125
150
0.001 0.01
0.1
1
10
100 1000 10000
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
3000
1000
50000
10 μs
10000
1000
100
100
10
1
100 μs
THIS AREA IS
LIMITED BY rDS(on)
1 ms
SINGLE PULSE
TJ = MAX RATED
10 ms
DC
R
θJC = 1.1 oC/W
C = 25 oC
SINGLE PULSE
RθJC = 1.1 oC/W
CURVE BENT TO
MEASURED DATA
T
T
C = 25 oC
0.1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
1
VDS, DRAIN to SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2014 Fairchild Semiconductor Corporation
FDMS8350L Rev.1.8
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
P
DM
0.1
0.1
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
0.01
Z
SINGLE PULSE
θJC
θJC
o
R
= 1.1 C/W
θJC
Peak T = P
x Z (t) + T
J
DM
θJC C
Duty Cycle, D = t / t
1
2
0.001
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
©2014 Fairchild Semiconductor Corporation
FDMS8350L Rev.1.8
www.fairchildsemi.com
5
5.10
4.90
A
4.42
3.81
PKG
C
L
B
7
6
5
8
8
5
1.14
KEEP OUT AREA
3.65
6.25
5.90
C
PKG
L
6.61
4.79
1.27
1
4
PIN #1
IDICATOR
TOP VIEW
SIDE VIEW
1
2
1.27
3
4
0.61
SEE
DETAIL A
3.81
5.10
LAND PATTERN
RECOMMENDATION
3.81
1.27
0.10
C A B
0.47
0.37
(0.38)
(8X)
1
4
(0.35)
0.65
0.55
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC MO-240, ISSUE A, VAR. AA,
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR
PIN #1
INDICATOR
4.66
4.46
BURRS DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) IT IS RECOMMENDED TO HAVE NO TRACES
OR VIAS WITHIN THE KEEP OUT AREA.
F) DRAWING FILE NAME: PQFN08JREV3.
8
5
0.70
4.33
4.13
BOTTOM VIEW
0.10 C
1.10
0.90
0.08 C
C
0.05
0.00
0.25
0.15
SEATING
PLANE
SCALE: 2:1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
相关型号:
©2020 ICPDF网 联系我们和版权申明