FDMS8350LET40 [ONSEMI]
N 沟道，PowerTrench® MOSFET，40V，300A，0.85mΩ;
| 型号： | FDMS8350LET40 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® MOSFET，40V，300A，0.85mΩ |
| 文件： | 总8页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMS8350LET40
MOSFET N‐Channel
POWERTRENCH)
40 V, 300 A, 0.85 mW
General Description
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This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced POWERTRENCH process that has
been especially tailored to minimize the on−state resistance and yet
maintain superior switching performance.
V
R
MAX
I MAX
D
DS
DS(ON)
40 V
0.85 mW @ 10 V
1.2 mW @ 4.5 V
47 A
Features
• Max R
• Max R
= 0.85 mW at V = 10 V, I = 47 A
GS D
= 1.2 mW at V = 4.5 V, I = 38 A
DS(on)
DS(on)
GS
D
S
• Advanced Package and Silicon combination for Low r
High Efficiency
and
DS(on)
• MSL1 Robust Package Design
• 100% UIL Tested
• These Devices are Pb−Free and are RoHS Compliant
G
Applications
D
• Primary DC−DC MOSFET
• Secondary Synchronous Rectifier
• Load Switch
N-CHANNEL MOSFET
Top
Bottom
S
Pin 1
Pin 1
S
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
G
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
40
Unit
V
D
D
V
DS
V
GS
D
D
PQFN8 5X6,
1.27P
CASE 483AG
20
V
I
D
300
A
Continuous (T = 25°C) (Note 5)
C
Continuous T = 100°C (Note 5)
C
MARKING DIAGRAM
Continuous, T = 25°C (Note 1a)
212
A
Pulsed (Note 4)
49
1464
S
S
D
D
$Y&Z&3&K
FDMS
8350LET
E
AS
Single Pulse Avalanche Energy
(Note 3)
1176
mJ
W
S
D
D
G
P
D
Power Dissipation:
T
A
= 25°C
125
3.33
C
T = 25°C (Note 1a)
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
T , T
Operating and Storage Junction
Temperature Range
−55 to +175
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDMS8350LET40 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
June, 2019 − Rev. 2
FDMS8350LET40/D
FDMS8350LET40
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
1.2
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
JA
R
45
q
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
40
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
17
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 32 V, V = 0 V
1
mA
DS
GS
I
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.8
3.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−6
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 47 A
0.68
0.96
1.1
0.85
1.2
mW
DS(on)
D
= 4.5 V, I = 38 A
D
= 10 V, I = 47 A, T = 150°C
1.4
D
J
g
FS
= 5 V, I = 47 A
247
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 20 V, V = 0 V, f = 1 MHz
11850
3430
69
16590
4805
100
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.1
1.2
2.4
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 20 V, I = 47 A, V = 10 V,
GEN
32
19
74
15
156
73
33
16
51
34
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
118
27
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
V
DD
= 0 V to 10 V
= 0 V to 4.5 V
219
102
nC
nC
nC
nC
g
Q
Gate to Source Charge
= 20 V, I = 47 A
D
gs
Q
Gate to Drain “Miller” Charge
= 20 V, I = 47 A
D
gd
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2
FDMS8350LET40
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 2.1 A (Note 2)
0.7
0.8
81
1.2
1.3
V
SD
GS
S
= 0 V, I = 47 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 47 A, di/dt = 100 A/ms
F
129
131
ns
rr
Q
Reverse Recovery Charge
82
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
NOTES:
a) 45°C/W when mounted on
b) 115°C/W when mounted on
a minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 1176 mJ is based on starting T = 25°C; L = 3 mH, I = 28 A, V = 40 V, V = 10 V. 100% test at L = 0.1 mH, I = 87 A.
AS
J
AS
DD
GS
AS
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro−mechanical application board design.
ORDERING INFORMATION
Device
Marking
Package
Reel Size
Tape Width
Quantity
FDMS8350LET40
FDMS8350LET
Power 56
13″
12 mm
3000 units
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3
FDMS8350LET40
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
320
240
160
80
15
VGS = 10 V
GS = 4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 3 V
V
12
9
VGS = 3.5 V
V
GS = 3.5 V
VGS = 4 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
6
VGS = 10 V
VGS = 3 V
3
VGS = 4.5 V
VGS = 4 V
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
80
160
240
320
V
DS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 6. Normalized On−Resistance vs Drain
Current and Gate Voltage
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
20
ID = 47 A
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
15
ID = 47 A
10
5
TJ = 150 o
C
TJ = 25 o
C
0
−75 −50 −25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
TJ, JUNCTION TEMPERATUREo(C)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 2. Normalized On−Resistance vs Junction
Figure 3. On−Resistance vs Gate to Source
Temperature
Voltage
320
320
VGS = 0 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
100
240
TJ = 175 o
C
10
1
VDS = 5 V
TJ = 175 o
C
TJ = 25 o
C
160
80
0
TJ = 25 o
C
TJ = −55oC
0.1
TJ = −55oC
0.01
0.001
012345
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 4. Transfer Characteristics
Figure 5. Source to Drain Diode Forward Voltage
vs Source Current
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4
FDMS8350LET40
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
10
8
100000
10000
ID = 47 A
Ciss
VDD = 15 V
VDD = 20 V
6
Coss
1000
100
10
VDD = 25 V
4
2
Crss
f = 1 MHz
GS = 0 V
V
0
0
34
68
102
136
170
0.1
1
10
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg , GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
320
200
100
10
1
240
TJ = 25 o
C
V
GS = 10 V
TJ = 125 o
C
160
80
0
VGS = 4.5 V
TJ = 150 o
C
R
qJC = 1.2 oC/W
0.001 0.01 0.1
1
10
100 1000 10000
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
tAV , TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
6000
50000
THIS AREA IS
LIMITED BY r DS(on)
1000
10000
10 ms
100
SINGLE PULSE
qJC = 1.2oC/W
C = 25 oC
R
100 ms
10
T
1000
1 ms
SINGLE PULSE
TJ = MAX RATED
10 ms
1
R
qJC = 1.2oC/W
100 ms/ DC
CURVE BENT TO
MEASURED DATA
T
C = 25oC
0.1
0.01
100
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
0.1
1
10
100 500
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMS8350LET40
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
P
DM
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
Z
(t) = r(t) x R
o
qJC
qJC
SINGLE PULSE
R
= 1.2 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Case Transient Thermal Response Curve
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AG
ISSUE A
DATE 25 JUN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13657G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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