FDMS8570SDC [ONSEMI]
25V N沟道PowerTrench® SyncFET™;
| 型号： | FDMS8570SDC |
| 厂家： | 
ONSEMI |
| 描述： | 25V N沟道PowerTrench® SyncFET™ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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July 2013
FDMS8570SDC
N-Channel PowerTrench® SyncFETTM
25 V, 60 A, 2.8 mΩ
Features
General Description
Dual CoolTM PQFN package
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s
advanced
PowerTrench®
process.
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 28 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 25 A
High performance technology for extremely low rDS(on)
SyncFETTM Schottky Body Diode
RoHS Compliant
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
S
S
D
D
D
G
5
6
7
8
4
3
2
1
S
G
Pin 1
S
S
S
D
D
D
D
D
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
25
V
V
12
Drain Current -Continuous (Package limited)
-Continuous
TC = 25 °C
TA = 25 °C
60
ID
(Note 1a)
(Note 3)
28
100
A
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
45
mJ
W
TC = 25 °C
TA = 25 °C
59
PD
Power Dissipation
(Note 1a)
3.3
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
(Top Source)
(Bottom Drain)
(Note 1a)
4.4
2.1
38
81
16
23
11
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1b)
°C/W
(Note 1i)
(Note 1j)
(Note 1k)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
12 mm
Quantity
10DC
FDMS8570SDC
Power 56
13’’
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
1
www.fairchildsemi.com
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
D = 10 mA, referenced to 25 °C
25
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
23
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 20 V, VGS = 0 V
500
μA
VGS = +12 V/-8 V, VDS = 0 V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
1.1
1.5
-3
2.2
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 10 mA, referenced to 25 °C
GS = 10 V, ID = 28 A
mV/°C
V
2.1
2.4
2.9
215
2.8
3.3
3.9
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 25 A
mΩ
VGS = 10 V, ID = 28 A, TJ = 125 °C
VDS = 5 V, ID = 28 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2825
662
94
pF
pF
pF
Ω
VDS = 13 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
0.8
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
4
ns
ns
VDD = 13 V, ID = 28 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
33
3
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
42
22
6.4
4.4
nC
nC
nC
nC
Qg
VDD = 13 V,
D = 28 A
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.6
0.8
22
0.8
1.2
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 28 A
trr
Reverse Recovery Time
ns
IF = 28 A, di/dt = 300 A/μs
Qrr
Reverse Recovery Charge
19
nC
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
2
Thermal Characteristics
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
(Note 1e)
(Note 1f)
4.4
2.1
38
81
27
34
16
19
26
61
16
23
11
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
°C/W
(Note 1g)
(Note 1h)
(Note 1i)
(Note 1j)
(Note 1k)
(Note 1l)
13
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
is guaranteed by design while R is determined
θCA
θJA
θJC
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in pad of 2 oz copper
2
2
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2
g. 200FPM Airflow, No Heat Sink,1 in pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
2
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
2
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 45 mJ is based on starting T = 25 °C, L = 0.4 mH, I = 15 A, V = 23 V, V = 10 V. 100% test at L = 0.1 mH, I = 23.8 A.
AS
J
AS
DD
GS
AS
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
100
4.5
3.6
2.7
1.8
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 4.5 V
80
VGS = 2.5 V
VGS = 3.5 V
VGS = 3 V
60
VGS = 3 V
VGS = 2.5 V
40
VGS = 3.5 V
VGS = 4.5 V
20
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.9
0.5
VGS = 10 V
0
0
20
40
60
80
100
0
0.3
0.6
0.9
1.2
1.5
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
F i g u r e 2 . No rma li zed O n-Re si stan ce
vs Drain Current and Gate Voltage
1.6
9
ID = 28 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
8
7
ID = 28 A
6
5
4
3
2
1
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
100
100
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
80
60
40
20
0
10
1
VDS = 5 V
TJ = 150 o
C
TJ = 25 oC
TJ = 25 o
C
TJ = 150 o
C
TJ = -55 o
C
0.1
0.01
TJ = -55 o
C
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
ID = 28 A
8
6
Ciss
VDD = 13 V
VDD = 10 V
Coss
4
2
0
VDD = 15 V
Crss
f = 1 MHz
GS = 0 V
V
10
0.1
0
10
20
30
40
50
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
120
100
80
60
40
20
0
100
10
1
VGS = 10 V
TJ = 25 o
C
VGS = 4.5 V
TJ = 100 oC
Limited by Package
θJC = 2.1 oC/W
R
TJ = 125 o
C
0.001
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
200
100
10000
SINGLE PULSE
RθJA = 81 oC/W
100 us
1000
100
10
A = 25 oC
10
1
T
1 ms
10 ms
100 ms
1 s
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 81 oC/W
10 s
DC
0.1
0.01
1
T
A = 25 oC
0.1
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
1
10
0.01
0.1
1
10
100
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
5
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
SINGLE PULSE
RθJA = 81 oC/W
0.001
0.0001
NOTES:
DUTY FACTOR: D = t /t
1
2
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
6
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
with
a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8570SDC.
10-2
30
25
20
15
10
5
TJ = 125 o
C
10-3
10-4
10-5
10-6
TJ = 100 o
C
di/dt = 300 A/μs
0
TJ = 25 o
C
-5
0
50
100
TIME (ns)
150
200
250
0
5
10
15
20
25
VDS, REVERSE VOLTAGE (V)
Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
Figure 14. FDMS8570SDC SyncFETTM body
diode reverse recovery characteristic
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
7
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
www.fairchildsemi.com
8
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
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CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
FPS™
F-PFS™
FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Sync-Lock™
®*
®
tm
®
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series
RapidConfig™
™
SM
TinyBoost™
TinyBuck™
TinyCalc™
®
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
®
TranSiC
®
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
OptoHiT™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
μSerDes™
®
SMART START™
Solutions for Your Success™
®
®
SPM
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild
®
®
UHC
®
Fairchild Semiconductor
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Ultra FRFET™
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VCX™
VisualMax™
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XS™
®
FACT
FAST
®
®
®
OPTOLOGIC
OPTOPLANAR
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SyncFET™
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®
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Datasheet contains the design specifications for product development. Specifications
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Not In Production
Rev. I64
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2
9
www.fairchildsemi.com
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FDMS86103L
Power Field-Effect Transistor, 12A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
FAIRCHILD
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