FDMS8460 [ONSEMI]
N 沟道，Power Trench® MOSFET，40V，49A，2.2mΩ;
| 型号： | FDMS8460 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，Power Trench® MOSFET，40V，49A，2.2mΩ PC 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET - N‐Channel,
POWERTRENCH)
40 V, 49 A, 2.2 mW
FDMS8460
General Description
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that has been especially
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®
tailored to minimize the on−state resistance and yet maintain superior
switching performance.
S
D
D
D
Features
S
S
G
• Max r
• Max r
= 2.2 mW at V = 10 V, I = 25 A
GS D
DS(on)
DS(on)
= 3.0 mW at V = 4.5 V, I = 21.7 A
GS
D
• Advanced Package and Silicon combination for low r
• MSL1 robust package design
• 100% UIL tested
DS(on)
D
N-Channel MOSFET
• RoHS Compliant
Applications
• DC−DC Conversion
Pin 1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Top
Bottom
Power 56
(PQFN8)
CASE 483AE
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current:
Value
Unit
V
V
DS
V
GS
40
20
V
I
D
A
MARKING DIAGRAM
− Continuous (Package limited) T = 25°C
49
167
25
C
− Continuous (Silicon limited) T = 25°C
C
− Continuous T = 25°C (Note 1a)
A
S
S
D
− Pulsed
160
$Y&Z&3&K
FDMS
8460
D
D
D
E
Single Pulse Avalanche Energy (Note 3)
Power Dissipation:
864
mJ
W
AS
S
P
D
T
= 25°C
104
2.5
C
G
T = 25°C (Note 1a)
A
T , T
Operating and Storage Junction Tempera-
ture Range
−55 to
°C
J
STG
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDMS8460
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
January, 2020 − Rev. 5
FDMS8460/D
FDMS8460
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Package
Quantity
FDMS8460
FDMS8460
Power 56 (PQFN8)
(Pb-Free / Halogen Free)
3000/Tape&Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
Value
1.2
Unit
°C/W
R
q
JC
R
50
q
JA
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
40
V
DSS
D
GS
DBV
Breakdown Voltage Temperature
Coefficient
= 250 mA, referenced to 25°C
32
mV/°C
DSS
D
/DT
J
DSS
GSS
I
Zero Gate Voltage Drain Current
V
V
= 32 V, V = 0 V
1
mA
DS
GS
I
Gate to Source Leakage Current, Forward
=
20 V, V = 0 V
100
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 250 mA
1.0
1.9
3.0
V
GS(th)
GS
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, referenced to 25°C
−7.5
mV/°C
GS(th)
J
D
r
Static Drain to Source On Resistance
Forward Transconductance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 25 A
2.0
2.6
2.6
137
2.2
3.0
3.3
mW
DS(on)
D
= 4.5 V, I = 21.7 A
D
= 10 V, I = 25 A, T = 125°C
D
J
g
FS
= 5 V, I = 25 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 20 V, V = 0 V, f = 1 MHz
5415
1470
170
7205
1955
250
pF
pF
pF
W
iss
DS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
f = 1MHz
0.1
1.4
3.1
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 20 V, I = 25 A, V = 10 V,
GEN
19
9
35
19
ns
ns
ns
ns
nC
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
48
7
78
d(off)
t
f
14
Q
Total Gate Charge
V
= 0 V to 10 V, V = 20 V,
78
110
g
GS
GS
DD
DD
I
D
= 25 A
V
= 0 V to 4.5 V, V = 20 V,
36
51
nC
DD
I
D
= 25 A
Q
Gate to Source Charge
V
= 20 V, I = 25 A
15
10
nC
nC
gs
D
Q
Gate to Drain “Miller” Charge
gd
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2
FDMS8460
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source to Drain Diode Forward Voltage
V
V
= 0 V, I = 25 A (Note 2)
0.8
0.7
53
1.3
1.2
85
V
SD
GS
S
= 0 V, I = 2.1 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 25 A, di/dt = 100 A/ms
F
ns
rr
Q
Reverse Recovery Charge
40
64
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
NOTES:
a. 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Starting T = 25°C, L = 0.3 mH, I = 24 A, V = 40 V, V = 10 V
J
AS
DD
GS
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
160
120
80
40
0
5
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
VGS = 4V
VGS = 3V
VGS = 3.5V
PULSE DURATION = 80ms
4
3
2
VGS = 3.5V
VGS = 4.5V
VGS = 10V
DUTY CYCLE = 0.5%MAX
VGS = 4V
VGS =4.5V
VGS =10V
1
VGS = 3V
0.5
0
1
2
, DRAIN TO SOURCE VOLTAGE (V)
3
0
40
80
120
160
V
I
, DRAIN CURRENT (A)
D
DS
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance
vs. Drain Current and Gate Voltage
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3
FDMS8460
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
ID = 25A
GS = 10V
ID = 25A
V
6
TJ = 125oC
4
2
TJ = 25oC
0
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
T , JUNCTION TEMPERATURE (5C)
J
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate
to Source Voltage
160
120
80
40
0
800
100
PULSE DURATION = 80ms
DUTY CYCLE = 0.5%MAX
VGS = 0V
VDS = 5V
TJ = 150oC
10
1
TJ = 150 oC
TJ = 25oC
TJ = 25oC
0.1
o
TJ = −55 C
0.01
1E−3
oC
4
TJ = −55
0
1
GS
2
3
5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
, GATE TO SOURCE VOLTAGE (V)
V
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
10
8
10000
ID = 25A
VDD = 15V
Ciss
VDD = 20V
1000
6
Coss
VDD = 25V
4
100
30
2
Crss
f = 1MHz
VGS = 0V
0
40
0
20
40
60
80
0.1
1
10
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain
to Source Voltage
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4
FDMS8460
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
200
150
40
10
TJ = 25oC
VGS = 10V
100
50
0
VGS = 4.5V
TJ = 125oC
Limited by Package
R
sJC = 1.2oC/W
1
0.01
0.1
t
1
10
100
1000
25
50
75
100
125
150
o
, TIME IN AVALANCHE (ms)
, CASE TEMPERATURE (
T
C)
AV
c
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
400
100
VGS = 10V
SINGLE PULSE
R
TA = 25oC
s JA = 125oC/W
1ms
10
1
10ms
100ms
1s
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
0.1
0.01
R
s JA = 125oC/W
10s
DC
1
TA = 25oC
0.5
10−3
10−2
10−1
t, PULSE WIDTH (sec)
1
10
0.01
0.1
1
10
100 200
100
1000
V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
0.01
1E−3
P
DM
t
1
t
2
SINGLE PULSE
s JA = 125oC/W
NOTES:
DUTY FACTOR: D = t /t
1
2
R
PEAK T = P x Z
x R
+ T
sJA A
J
DM
sJA
10−3
10−2
10−1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and or other
countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
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