FDMS1D2N03DSD [ONSEMI]
PowerTrench® Power Clip Asymmetric Dual N-Channel MOSFET, 30 V;
| 型号： | FDMS1D2N03DSD |
| 厂家： | 
ONSEMI |
| 描述： | PowerTrench® Power Clip Asymmetric Dual N-Channel MOSFET, 30 V |
| 文件： | 总13页 (文件大小：456K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FDMS1D2N03DSD
POWERTRENCH) Power
Clip 30 V Asymmetric Dual
N‐Channel MOSFETs
General Description
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This device includes two specialized N-Channel MOSFETs in
a dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q1) and synchronous SyncFETt (Q2) have
been designed to provide optimal power efficiency.
ELECTRICAL CONNECTION
Features
Q1: N-Channel
• Max R
• Max R
= 3.25 mW at V = 10 V, I = 19 A
GS D
DS(on)
= 4 mW at V = 4.5 V, I = 17 A
DS(on)
GS
D
Q2: N-Channel
N-Channel MOSFET
• Max R
= 0.97 mW at V = 10 V, I = 37 A
GS D
DS(on)
PIN1
• Max R
= 1.25 mW at V = 4.5 V, I = 34 A
GS D
DS(on)
• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in
Lower Switching Losses.
• MOSFET Integration Enables Optimum Layout for Lower Circuit
Inductance and Reduced Switch Node Ringing.
• RoHS Compliant
Top View
Bottom View
Power Clip 56
(PQFN8 5x6)
CASE 483AR
Applications
• Computing
PIN ASSIGNMENT
• Communications
LSG
SW
HSG
• General Purpose Point of Load
GR
V+
V+
SW
SW
*PAD9 V+(HSD)
MARKING DIAGRAM
$Y&Z&3&K
FDMS1D2
N03DSD
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
FDMS1D2N03DSD = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
May, 2018 − Rev. 5
FDMS1D2N03DSD/D
FDMS1D2N03DSD
MOSFET MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
A
Symbol
Parameter
Q1
30
Q2
30
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
+16/−12
+16/−12
V
I
D
A
− Continuous (T = 25°C) (Note 5)
70
54
164
126
C
− Continuous (T = 85°C) (Note 5)
C
− Continuous (T = 25°C)
19 (Note 1a)
15 (Note 1a)
362
37 (Note 1b)
29 (Note 1b)
1199
A
− Continuous (T = 85°C)
A
− Pulsed (T = 25°C) (Note 4)
A
E
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation for Single Operation
121
337
mJ
W
AS
P
D
26
42
(T = 25°C)
A
C
2.1 (Note 1a)
2.3 (Note 1b)
(T = 25°C)
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Q1
Q2
Unit
R
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
4.8
3.0
_C/W
_C/W
_C/W
q
JC
q
JA
q
JA
R
R
60 (Note 1a)
130 (Note 1c)
55 (Note 1b)
120 (Note 1d)
PACKAGE MARKING AND ORDERING INFORMATION
Device
Top Marking
Package
Reel Size
Tape Width
Quantity
FDMS1D2N03DSD
FDMS1D2N03DSD
Power Clip 56 (PGFN8)
(Pb-Free / Halogen Free)
13″
12 mm
3,000 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 1 mA, V = 0 V
Q1
Q2
30
30
−
−
−
−
V
DSS
D
GS
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 10 mA, referenced to 25_C
Q1
Q2
−
−
15
21
−
−
mV/_C
mA
DSS
J
D
I
Zero Gate Voltage Drain Current
V
= 24 V, V = 0 V
Q1
Q2
−
−
−
−
1
500
DSS
DS
GS
I
Gate to Source Leakage Current,
Forward
V = +16 V/−12 V,
GS
V = 0 V
DS
Q1
Q2
−
−
−
−
100
100
nA
nA
GSS
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
V
GS
= V , I = 320 mA
Q1
Q2
0.8
1.0
1.3
1.5
2.5
3.0
V
DS
D
= V , I = 1 mA
DS
D
DV
/DT
Gate to Source Threshold Voltage
Temperature Coefficient
I
= 1 mA, referenced to 25_C
= 10 mA, referenced to 25_C
Q1
Q2
−
−
−3
−3
−
−
mV/_C
GS(th)
J
D
I
D
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2
FDMS1D2N03DSD
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Unit
ON CHARACTERISTICS
R
Drain to Source On Resistance
V
GS
V
GS
V
GS
= 10 V, I = 19 A
Q1
−
−
−
2.5
3.0
3.6
3.25
4.0
4.9
mW
DS(on)
D
= 4.5 V, I = 17 A
D
= 10 V, I = 19 A,
D
T =125_C
J
V
GS
V
GS
V
GS
= 10 V, I = 37 A
Q2
−
−
−
0.73
0.93
1.1
0.97
1.25
1.6
D
= 4.5 V, I = 34 A
= 10 V, I = 37 A,
D
D
T =125_C
J
g
FS
Forward Transconductance
V
DS
V
DS
= 5 V, I = 19 A
Q1
Q2
−
−
95
247
−
−
S
D
= 5 V, I = 37 A
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
Q1:
Q1
Q2
−
−
1410
4860
−
−
pF
pF
pF
W
iss
V
DS
= 15 V, V = 0 V,
GS
f = 1 MHZ
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Q1
Q2
−
−
564
1845
−
−
oss
Q2:
V
DS
= 15 V, V = 0 V,
GS
f = 1 MHZ
C
Q1
Q2
−
−
40
123
−
−
rss
R
Q1
Q2
−
−
0.3
0.3
−
−
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Q1:
Q1
Q2
−
−
8
13
−
−
ns
ns
ns
ns
nC
d(on)
V
DD
= 15 V, I = 19 A,
= 6 W
D
R
GEN
t
r
Rise Time
Q1
Q2
−
−
2
5
−
−
Q2:
V
DD
= 15 V, I = 37 A,
D
= 6 W
R
GEN
t
Turn-Off Delay Time
Fall Time
Q1
Q2
−
−
22
37
−
−
d(off)
t
f
Q1
Q2
−
−
2
4
−
−
Q
Q
Total Gate Charge
V
GS
= 0 V to 10 V
Q1
Q2
−
−
23
84
33
117
g
g
Q1: V = 15 V, I = 19 A
Q2: V = 15 V, I = 37 A
DD
D
DD
D
Total Gate Charge
V
GS
= 0 V to 4.5 V
Q1
Q2
−
−
11
39
15
54
nC
Q1: V = 15 V, I = 19 A
DD
D
Q2: V = 15 V, I = 37 A
DD
D
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q1: V = 15 V, I = 19 A
Q1
Q2
−
−
3.1
13
−
−
nC
nC
gs
DD
D
Q2: V = 15 V, I = 37 A
DD
D
Q
Q1: V = 15 V, I = 19 A
Q1
Q2
−
−
2.5
9
−
−
gd
DD
D
Q2: V = 15 V, I = 37 A
DD
D
SOURCE-DRAIN DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward
Voltage
V
GS
V
GS
= 0 V, I = 19 A (Note 2)
Q1
Q2
−
−
0.8
0.8
1.2
1.2
V
S
= 0 V, I = 37 A (Note 2)
S
t
Reverse Recovery Time
Q1:
Q1
Q2
−
−
28
43
−
−
ns
nC
rr
I = 19 A, di/dt = 100 A/ms
F
Q2:
Q
Reverse Recovery Charge
Q1
Q2
−
−
12
63
−
−
rr
I = 37 A, di/dt = 300 A/ms
F
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
FDMS1D2N03DSD
NOTES:
1. R
2
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is determined
CA
q
q
JA
by the user’s board design.
a) 60°C/W when mounted on
b) 55°C/W when mounted on
2
2
a 1 in pad of 2 oz copper.
a 1 in pad of 2 oz copper.
c) 130°C/W when mounted on
d) 120°C/W when mounted on
a minimum pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. Q1: E of 121 mJ is based on starting T = 25_C; N-ch: L = 3 mH, I = 9 A, V = 30 V. 100% tested at L = 0.1 mH, I = 29 A.
AS
J
AS
DD
AS
Q2: E of 337 mJ is based on starting T = 25_C; N-ch: L = 3 mH, I = 15 A, V = 30 V. 100% tested at L = 0.1 mH, I = 47 A.
AS
J
AS
DD
AS
4. Pulsed Id please refer to Figure 11 and Figure 24 SOA graphs for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
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4
FDMS1D2N03DSD
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
90
75
60
45
30
15
0
6.0
4.5
VGS = 10 V
GS = 4.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
3.5 V
=
VGS
V
GS = 2.5 V
VGS = 3 V
3.0
1.5
0.0
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V
V
GS = 3.5 V
0.0
0.5
1.0
1.5
2.0
0
15
30
45
60
75
90
, DRAIN CURRENT (A)
ID
, DRAIN TO SOURCE VOLTAGE (V)
VDS
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs. Drain
Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
ID = 19 A
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
VGS = 10 V
15
ID = 19 A
10
TJ = 125 o
C
5
0
TJ = 25 oC
4
−75 −50 −25
0
25
50 75 100 125 150
0
2
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (5C)
Figure 3. Normalized On-Resistance vs.
Junction Temperature
Figure 4. On-Resistance vs. Gate to Source
Voltage
100
90
75
60
45
30
15
0
VGS = 0 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
10
VDS = 5 V
TJ = 150 o
C
TJ = 150 o
C
1
TJ = 25 o
C
TJ = 25 oC
0.1
TJ = −55oC
TJ = −55oC
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current
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FDMS1D2N03DSD
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
ID = 19 A
Ciss
VDD = 15 V
6
VDD = 10 V
Coss
VDD = 20 V
4
100
2
f = 1 MHz
Crss
V
GS = 0 V
0
10
0.1
0
5
10
15
20
25
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs. Drain to Source Voltage
80
64
50
10
TJ = 25oC
VGS = 10 V
48
32
16
0
TJ = 100 oC
VGS = 4.5 V
TJ = 125oC
R
qJC = 4.8 oC/W
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
, CASE TEMPERATURE (5C)
TC
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain Current
vs. Case Temperature
500
100
10000
SINGLE PULSE
10 ms
R
qJC = 4.8 o
C/W
TC = 25 oC
1000
100
10
10
1
100 ms
THIS AREA IS
LIMITED BY RDS(on)
1 ms
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
qJC = 4.8 o
R
C/W
CURVE BENT TO
MEASURED DATA
= 25 o
TC
C
0.1
0.1
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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FDMS1D2N03DSD
TYPICAL CHARACTERISTICS (Q1 N-Channel)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
R
qJC
qJC
o
SINGLE PULSE
= 4.8 C/W
qJC
Peak T = P
x Z (t) + T
J
DM
qJC C
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
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FDMS1D2N03DSD
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
180
150
120
90
4.5
10 V
=
VGS
GS = 4.5 V
4 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
3.6
2.7
1.8
0.9
0.0
VGS
=
VGS = 3 V
VGS = 3.5 V
V
GS = 3.5 V
3 V
=
60
VGS
30
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS = 4 V
VGS = 10 V
4.5 V
=
VGS
90
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
30
60
120
150
180
, DRAIN TO SOURCE VOLTAGE (V)
VDS
ID
, DRAIN CURRENT (A)
Figure 14. On-Region Characteristics
Figure 15. Normalized On-Resistance vs. Drain
Current and Gate Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
I
D = 37 A
GS = 10 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
4
ID = 37 A
3
2
TJ = 125 o
C
1
0
TJ = 25 o
C
−75 −50 −25
0
25 50 75 100 125 150
2
4
6
8
10
, GATE TO SOURCE VOLTAGE (V)
VGS
TJ, JUNCTION TEMPERATURE (5C)
Figure 16. Normalized On-Resistance vs.
Junction Temperature
Figure 17. On-Resistance vs. Gate to Source
Voltage
180
100
PULSE DURATION = 80 ms
VGS = 0 V
DUTY CYCLE = 0.5% MAX
150
120
90
60
30
0
10
TJ = 125 o
C
VDS = 5 V
TJ = 125 o
C
T
J = 25 o
TJ = −55oC
C
1
0.1
T
J = 25 o
C
TJ = −55oC
0.01
0.001
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. Transfer Characteristics
Figure 19. Source to Drain Diode Forward
Voltage vs. Source Current
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FDMS1D2N03DSD
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
10
8
10000
1000
ID = 37 A
Ciss
VDD = 15 V
Coss
6
VDD = 10 V
4
VDD = 20 V
100
10
Crss
2
f = 1 MHz
GS = 0 V
V
0
0
20
40
60
80
100
0.1
1
10
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 20. Gate Charge Characteristics
Figure 21. Capacitance vs. Drain to Source Voltage
180
100
10
1
144
TJ = 25 o
C
VGS = 10 V
108
TJ = 100 o
C
VGS = 4.5 V
72
TJ = 125 o
C
36
R
qJC = 3.0 oC/W
0
25
0.001
0.01
0.1
1
10
100
1000
50
75
100
125
150
, CASE TEMPERATURE (5C)
TC
tAV, TIME IN AVALANCHE (ms)
Figure 22. Unclamped Inductive
Switching Capability
Figure 23. Maximum Continuous Drain Current
vs. Case Temperature
2000
1000
100000
SINGLE PULSE
oC/W
R
qJC = 3.0
10 ms
10000
1000
100
TC = 25 oC
100
10
1
THIS AREA IS
LIMITED BY RDS(on)
100 ms
1 ms
SINGLE PULSE
10 ms
100 ms
= MAX RATED
oC/W
TJ
R
qJC = 3.0
CURVE BENT TO
MEASURED DATA
C = 25 o
T
C
0.1
0.1
10
10−5
10−4
10−3
t, PULSE WIDTH (sec)
10−2
10−1
1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe Operating Area
Figure 25. Single Pulse Maximum Power
Dissipation
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FDMS1D2N03DSD
TYPICAL CHARACTERISTICS (Q2 N-Channel)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
P
DM
0.1
0.1
0.01
0.05
0.02
0.01
t
1
t
2
NOTES:
(t) = r(t) x R
Z
qJC
qJC
o
R
= 3.0 C/W
SINGLE PULSE
qJC
Peak T = P
x Z (t) + T
qJC C
J
DM
Duty Cycle, D = t / t
1
2
0.001
10−5
10−4
10−3
10−2
10−1
1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
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FDMS1D2N03DSD
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
ON’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky diode
in parallel with a MOSFET. Figure 27 shows the reverse
recovery characteristic of the FDMS1D2N03DSD.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
10−1
40
35
30
25
10−2
10−3
10−4
10−5
10−6
TJ = 125 o
C
20
TJ = 100 o
C
di/dt = 248 A/ms
15
10
5
TJ = 25 o
C
0
−5
100
200
300
400
500
600
700
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
TIME (ns)
Figure 27. FDMS1D2N03DSD SyncFET Body Diode
Reverse Recovery Characteristic
Figure 28. SyncFET Body Diode Reverse Leakage vs.
Drain-Source Voltage
POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its
subsidiaries in the United States and/or other countries.
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11
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5x6, 1.27P
CASE 483AR
ISSUE A
DATE 21 MAY 2021
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
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PQFN8 5x6, 1.27P
PAGE 1 OF 1
ON Semiconductor and
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