FDMS0309AS [ONSEMI]
N 沟道,PowerTrench® SyncFET™,30V,49A,3.5mΩ;型号: | FDMS0309AS |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® SyncFET™,30V,49A,3.5mΩ 开关 脉冲 光电二极管 晶体管 |
文件: | 总9页 (文件大小:421K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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January 2015
FDMS0309AS
N-Channel PowerTrench® SyncFETTM
30 V, 49 A, 3.5 mΩ
Features
General Description
The FDMS0309AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
rDS(on) while maintaining excellent switching performance.This
device has the added benefit of an efficient monolithic Schottky
body diode.
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced package and silicon combination for low rDS(on) and
high efficiency
SyncFETTM Schottky Body Diode
MSL1 Robust Package Design
100% UIL tested
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
RoHS Compliant
Bottom
Top
Pin 1
D
D
D
G
5
6
7
8
4
3
2
1
S
S
S
G
S
S
S
D
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Parameter
Ratings
Units
Drain to Source Voltage
30
V
V
V
VDSt
VGS
Drain to Source Transient Voltage ( t
Gate to Source Voltage
< 100 ns)
33
Transient
(Note 4)
±20
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
TC = 25°C
49
TC = 25°C
TA = 25°C
96
ID
A
(Note 1a)
(Note 3)
(Note 1a)
21
100
-Pulsed
EAS
Single Pulse Avalanche Energy
Power Dissipation
66
mJ
W
TC = 25°C
TA = 25°C
50
PD
Power Dissipation
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2.5
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13 ’’
Tape Width
12 mm
Quantity
FDMS0309AS
FDMS0309AS
Power 56
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
www.fairchildsemi.com
1
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1 mA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 10 mA, referenced to 25 °C
25
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
500
100
μA
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 1 mA
D = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 21 A
GS = 4.5 V, ID = 19 A
1.2
1.6
-5
3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
mV/°C
2.7
3.4
3.5
4.3
V
rDS(on)
Static Drain to Source On Resistance
Forward Transconductance
mΩ
VGS = 10 V, ID = 21 A,
TJ = 125 °C
3.7
4.8
gFS
VDS = 5 V, ID = 21 A
120
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2255
815
85
3000
1085
125
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1.0
2.5
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
11
4.5
29
19
10
46
10
47
23
ns
ns
VDD = 15 V, ID = 21 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
ns
3.7
34
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V
nC
nC
nC
nC
Qg
16
VDD = 15 V,
D = 21 A
I
Qgs
Qgd
5.9
4.6
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 2 A
(Note 2)
(Note 2)
0.6
0.8
26
0.8
1.2
42
VSD
Source-Drain Diode Forward Voltage
V
VGS = 0 V, IS = 21 A
trr
Reverse Recovery Time
ns
IF = 21 A, di/dt = 300 A/μs
Qrr
Reverse Recovery Charge
27
44
nC
Notes:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a. 50 °C/W when mounted on a
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2
1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E of 66 mJ is based on starting T = 25 °C, L = 0.3 mH, I = 21 A, V = 27 V, V = 10 V
AS
J
AS
DD
GS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
www.fairchildsemi.com
2
Typical Characteristics TJ = 25 °C unless otherwise noted
100
5
4
3
2
1
0
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
80
VGS = 6 V
VGS = 3.5 V
VGS = 4.5 V
60
40
20
0
VGS = 4 V
VGS = 3.5 V
VGS = 4 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
VGS = 4.5 V VGS = 6 V
0.0
0.5
1.0
1.5
2.0
0
20
40
60
80
100
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
1.6
10
ID = 21 A
GS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
V
ID = 21 A
1.4
1.2
1.0
0.8
0.6
8
6
4
2
TJ = 125 o
C
TJ = 25 o
C
-75 -50 -25
0
25 50 75 100 125 150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
100
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 0 V
80
60
40
20
0
VDS = 5 V
TJ = 125 o
C
TJ = 125 o
C
10
1
TJ = 25 oC
TJ = 25 o
C
TJ = -55 o
C
TJ = -55 o
C
0.1
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
www.fairchildsemi.com
3
Typical Characteristics TJ = 25 °C unless otherwise noted
10
5000
1000
ID = 21 A
Ciss
8
VDD = 15 V
6
Coss
VDD = 10 V
VDD = 20 V
4
2
0
Crss
100
40
f = 1 MHz
= 0 V
V
GS
0
10
20
Q , GATE CHARGE (nC)
30
40
30
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
100
80
60
40
20
0
40
TJ = 25 oC
VGS = 10 V
10
VGS = 4.5 V
TJ = 100 oC
Limited by Package
RθJC = 2.5 oC/W
TJ = 125 o
C
1
0.001
0.01
0.1
1
10
100
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10.M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
200
100
2000
1000
100
10
100 μs
10
1
1 ms
10 ms
THIS AREA IS
100 ms
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
SINGLE PULSE
RθJA = 125 oC/W
0.1
0.01
10 s
DC
T
A = 25 oC
T
A = 25 oC
1
0.5
10-4
10-3
10-2
t, PULSE WIDTH (sec)
10-1
1
10
0.01
0.1
1
10
100200
100 1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1
P
DM
0.05
0.02
0.01
t
1
t
2
0.01
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
1
2
R
θJA = 125 oC/W
PEAK T = P
J
x Z
x R
+ T
DM
θJA
θJA A
(Note 1b)
0.001
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
1
10
100
1000
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
www.fairchildsemi.com
5
Typical Characteristics (continued)
TM
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
with
a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS0309AS.
10-2
25
20
15
10
5
TJ = 125 o
C
10-3
10-4
10-5
10-6
di/dt = 300 A/μs
TJ = 100 o
C
TJ = 25 o
C
0
-5
0
50
100
150
200
0
5
10
15
20
25
30
TIME (ns)
VDS, REVERSE VOLTAGE (V)
Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
Figure 14. FDMS0309AS SyncFETTM body
diode reverse recovery characteristic
©2011 Fairchild Semiconductor Corporation
FDMS0309AS Rev.C5
www.fairchildsemi.com
6
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE A
5.10
3.91
5.10
PKG
A
SEE
DETAIL B
1.27
6.61
C
L
B
8
7
6
5
8
5
0.77
4.52
3.75
5.85
5.65
C
PKG
6.15
L
KEEP OUT
AREA
1.27
1
4
1
2
3
4
TOP VIEW
0.61
1.27
3.81
LAND PATTERN
RECOMMENDATION
OPTIONAL DRAFT
ANGLE MAY APPEAR
ON FOUR SIDES
SEE
DETAIL C
5.00
4.80
OF THE PACKAGE
0.35
0.15
ꢀꢁꢂꢃ
0.10 C
0.30
0.05
0.05
0.00
SIDE VIEW
ꢀꢁꢂꢃ
8X
0.08 C
C
0.35
0.15
5.20
4.80
1.10
0.90
SEATING
PLANE
DETAIL C
DETAIL B
SCALE: 2:1
3.81
SCALE: 2:1
1.27
0.51
(8X)
0.31
NOTES: UNLESS OTHERWISE SPECIFIED
(0.34)
A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,
ISSUE A, VAR. AA,.
0.10
C A B
1
2
3
4
B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.
MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
0.76
0.51
(0.52)
D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.
E. IT IS RECOMMENDED TO HAVE NO TRACES OR
VIAS WITHIN THE KEEP OUT AREA.
6.25
5.90
+0.30
3.48
-0.10
(0.50)
(0.30)
(2X)
8
7
6
5
ꢀꢄꢅꢅꢀꢄꢂꢀ
+0.10
-0.15
0.20
(8X)
3.96
3.61
BOTTOM VIEW
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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