FDMS0312AS [ONSEMI]
N 沟道，PowerTrench® SyncFET™，30V，22A，5.0mΩ;
| 型号： | FDMS0312AS |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，PowerTrench® SyncFET™，30V，22A，5.0mΩ 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：504K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH),
SyncFETt
V
R
MAX
I MAX
D
DS
DS(ON)
30 V
5.0 mW @ 10 V
6.2 mW @ 4.5 V
22 A
D
D
D
30 V, 22 A, 5.0 mW
D
G
FDMS0312AS
General Description
S
S
S
Pin 1
PQFN8 5 y 6, 1.27P
(Power 56)
The FDMS0312AS has been designed to minimize losses in power
conversion application. Advancements in both silicon and package
CASE 483AE
technologies have been combined to offer the lowest R
while
DS(on)
maintaining excellent switching performance. This device has the
added benefit of an efficient monolithic Schottky body diode.
MARKING DIAGRAM
Features
• Max R
• Max R
= 5.0 mW at V = 10 V, I = 18 A
GS D
DS(on)
&Z&3&K
FDMS
0312AS
= 6.2 mW at V = 4.5 V, I = 16 A
DS(on)
GS
D
• Advanced Package and Silicon Combination for Low R
and High Efficiency
DS(on)
• SyncFET Schottky Body Diode
• MSL1 Robust Package Design
&Z
&3
&K
= Assembly Plant Code
= 3−Digit Date Code
= 2−Digit Lot Run Traceability Code
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant
FDMS0312AS = Specific Device Code
Applications
PIN CONNECTIONS
• Synchronous Rectifier for DC−DC Converters
• Notebook Vcore/GPU Low Side Switch
• Networking Point of Load Low Side Switch
• Telecom Secondary Side Rectification
G
S
S
S
5
6
7
8
4
3
2
1
D
D
D
D
ORDERING INFORMATION
†
Device
Package
Shipping
FDMS0312AS
PQFN8
(Pb−Free,
Halide Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
May, 2023 − Rev. 3
FDMS0312AS/D
FDMS0312AS
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Value
30
Unit
V
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage (Note 4)
Drain Current
20
V
I
D
Continuous (Package limited)
Continuous (Silicon limited)
Continuous (Note 1a)
Pulsed
T
T
= 25°C
= 25°C
22
A
C
70
C
T = 25°C
A
18
100
33
E
AS
Single Pulse Avalanche Energy (Note 3)
Power Dissipation
mJ
W
P
D
T
C
= 25°C
36
T = 25°C
2.5
A
(Note 1a)
T , T
Operating and Storage Junction Temperature Range
−55 to +150
°C
J
STG
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
3.4
Unit
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (Note 1a)
°C/W
R
q
JC
R
50
q
JA
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2
FDMS0312AS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 1 mA, V = 0 V
30
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 10 mA, referenced to 25°C
−
18
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
= 24 V, V = 0 V
−
−
−
−
500
100
mA
DSS
GSS
DS
GS
I
Gate to Source Leakage Current, Forward
= 20 V, V = 0 V
nA
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V , I = 1 mA
1.2
1.5
3.0
V
GS(th)
GS
DS
D
Gate to Source Threshold Voltage
Temperature Coefficient
= 10 mA, referenced to 25°C
−
−4
−
mV/°C
DVGS(th)
DTJ
D
R
Static Drain to Source On Resistance
V
GS
V
GS
V
GS
V
DS
= 10 V, I = 18 A
−
−
−
−
4.2
5.4
5.3
92
5.0
6.2
6.8
−
mW
DS(on)
D
= 4.5 V, I = 16 A
D
= 10 V, I = 18 A, T = 125°C
D
J
g
FS
Forward Transconductance
= 5 V, I = 18 A
S
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
DS
= 15 V, V = 0 V, f = 1 MHz
−
−
−
−
1365
550
70
1815
730
105
2.5
pF
pF
pF
W
iss
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
0.5
g
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Rise Time
V
= 15 V, I = 18 A, V = 10 V,
GEN
−
−
−
−
−
−
−
−
10
2.3
25
6
19
10
40
12
31
16
−
ns
ns
d(on)
DD
D
GS
R
= 6 W
t
r
t
Turn-Off Delay Time
Fall Time
ns
d(off)
t
f
ns
Q
Total Gate Charge
V
GS
V
GS
V
DD
V
DD
= 0 V to 10 V, V = 15 V, I = 18 A
23
11
nC
nC
nC
nC
g
DD
D
= 0 V to 4.5 V, V = 15 V, I = 18 A
DD
D
Q
Gate to Source Charge
= 15 V, I = 18 A
3.3
3.7
gs
D
Q
Gate to Drain “Miller” Charge
= 15 V, I = 18 A
−
gd
D
DRAIN-SOURCE DIODE CHARACTERISTICS
V
Source−Drain Diode Forward Voltage
V
V
= 0 V, I = 2 A (Note 2)
−
−
−
−
0.63
0.8
23
0.8
1.2
36
V
SD
GS
S
= 0 V, I = 18 A (Note 2)
GS
S
t
Reverse Recovery Time
I = 18 A, di/dt = 300 A/ms
F
ns
rr
Q
Reverse Recovery Charge
20
32
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. R
is guaranteed
JC
q
q
JA
by design while R
is determined by the user’s board design.
q
CA
a) 50°C/W when mounted on
b) 125°C/W when mounted on
2
a 1 in pad of 2 oz copper.
a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E of 33 mJ is based on starting T = 25°C, L = 0.3 mH, I = 15 A, V = 27 V, V = 10 V.
AS
J
AS
DD
GS
4. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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3
FDMS0312AS
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
J
5
4
100
80
V
= 3 V
V
= 10 V
= 6 V
GS
GS
GS
V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
GS
= 4.5 V
= 4 V
V
V
= 3 V
GS
V
GS
= 3.5 V
3
2
60
40
20
V
GS
= 3.5 V
V
GS
= 4 V
1
0
V
= 10 V
V
GS
= 6 V
60
V
= 4.5 V
40
GS
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
GS
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
20
80
100
V
DS
, Drain to Source Voltage (V)
I , Drain Current (A)
D
Figure 1. On Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
24
18
12
6
1.6
1.4
1.2
1.0
0.8
0.6
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
I
V
= 18 A
D
= 10 V
GS
I
D
= 18 A
T = 125°C
J
T = 25°C
J
0
10
−50 −25
0
25 50
75 100 125 150
2
4
6
8
−75
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On Resistance
vs. Junction Temperature
Figure 4. On−Resistance vs. Gate to Source
Voltage
100
100
80
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= 0 V
T = 125°C
J
10
1
T = 125°C
J
V
DS
= 5 V
60
T = 25°C
T = 25°C
J
J
0.1
40
20
0
T = −55°C
J
0.01
T = −55°C
J
0.001
4
1
2
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, Body Diode Forward Voltage (V)
V
GS
, Gate to Source Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs. Source Current
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4
FDMS0312AS
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
10
8
3000
1000
I
D
= 18 A
C
iss
V
= 15 V
V
DD
= 10 V
DD
6
4
2
0
C
oss
V
= 20 V
DD
100
40
C
rss
f = 1 MHz
= 0 V
V
GS
0
5
10
15
20
25
0.1
10
, Drain to Source Voltage (V)
30
1
Q , Gate Charge (nC)
g
V
DS
Figure 8. Capacitance vs. Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
80
60
40
20
0
40
10
T = 25°C
J
V
= 10 V
GS
V
= 4.5 V
GS
T = 100°C
J
T = 125°C
J
R
= 3.4°C/W
q
JC
Limited by Package
25 50
1
0.001
0.01
40
0.1
1
10
75
100
125
150
t
, Time in Avalanche (ms)
AV
T , Case Temperature (5C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
200
100
2000
1000
SINGLE PULSE
R
= 125°C/W
q
JA
100 ms
T = 25°C
A
10
1 ms
100
10
10 ms
THIS AREA IS
LIMITED BY R
1
100 ms
DS(on)
1 s
SINGLE PULSE
0.1
T = MAX RATED
10 s
DC
J
R
= 125°C/W
q
JA
1
T = 25°C
A
0.01
0.5
−4
−3
−2
−1
10
10
, Drain to Source Voltage (V)
10
10
10
1
10
100
0.01
0.1
1
100
1000
V
t, Pulse Width (s)
DS
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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5
FDMS0312AS
TYPICAL CHARACTERISTICS (continued)
(T = 25°C unless otherwise noted)
J
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
0.001
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
R
= 125°C/W
1
2
q
JA
PEAK T = P
× Z
× R + T
q
JA JA A
(Note1b)
q
J
DM
0.0001
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
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6
FDMS0312AS
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
onsemi’s SyncFET process embeds a Schottky diode in
parallel with POWERTRENCH MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 14 shows
the reverse recovery characteristic of the FDMS0312AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
−2
10
25
20
T = 125°C
J
−3
10
15
di/dt = 300 A/ms
T = 100°C
J
−4
−5
−6
10
10
10
10
5
0
T = 25°C
J
−5
10
5
20
30
40
50
0
10
15
20
25
30
Time (ns)
V
DS
, Reverse Voltage (V)
Figure 15. SyncFET Body Diode Reverse
Figure 14. FDMS0312AS SyncFET Body Diode
Reverse Recovery Characteristic
Leakage vs. Drain−Source Voltage
POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United
States and/or other countries.
SyncFET is a trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PQFN8 5X6, 1.27P
CASE 483AE
ISSUE C
DATE 21 JAN 2022
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13655G
PQFN8 5X6, 1.27P
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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TECHNICAL PUBLICATIONS:
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For additional information, please contact your local Sales Representative at
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