FDME1024NZT [ONSEMI]
双 N 沟道，Power Trench® MOSFET，20V，3.8A，66mΩ;
| 型号： | FDME1024NZT |
| 厂家： | 
ONSEMI |
| 描述： | 双 N 沟道，Power Trench® MOSFET，20V，3.8A，66mΩ 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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MOSFET – Dual, N-Channel,
POWERTRENCH)
D2
G1
S1
D2
Pin 1
D1
20 V, 3.8 A, 66 mW
S2
G2
D1
FDME1024NZT
Description
This Device is Designed Specifically as a Single Package Solution
for Dual Switching Requirement in cellular handset and other
Ultra−Portable Applications. It features two independent N−Channel
MOSFETs with low on−state resistance for minimum conduction
losses.
MicroFET
UDFN6 1.6X1.6, 0.5P
CASE 517DW
The MicroFET™ 1.6x1.6 Thin package offers Exceptional Thermal
Performance for it’s physical size and is well suited to switching and
linear mode applications.
Features
• Max R
• Max R
• Max R
• Max R
= 66 mꢀ at V = 4.5 V, I = 3.4 A
GS D
DS(on)
DS(on)
DS(on)
DS(on)
= 86 mꢀ at V = 2.5 V, I = 2.9 A
GS
D
= 113 mꢀ at V = 1.8 V, I = 2.5 A
GS
D
= 160 mꢀ at V = 1.5 V, I = 2.1 A
GS
D
MARKING DIAGRAM
• Low Profile 0.55 mm Maximum − in the New Package
MicroFET 1.6x1.6 Thin
• Free From Halogenated Compounds and Antimony Oxides
&Z&2&K
4T
• HBM ESD Protection Level > 1600 V (Note 3)
• These Devices is Pb−Free, Halide Free and is RoHS Compliant
&Z
&2
&K
4T
= Assembly Plant Code
Typical Applications
• Baseband Switch
• Load Switch
= 2−Digit Date−Code (Year & Week)
= 2−Digit Lot Traceability Code
= Specific Device Code
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
ORDERING INFORMATION
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Value
20
Unit
V
†
Device
Shipping
Package
V
DS
V
GS
FDME1024NZT
UDFN−6
(Pb−Free)
5000 /
Tape & Reel
8
V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
I
A
Drain Current T = 25°C
D
A
− Continuous (Note 1a)
− Pulsed
3.8
6
P
Power Dissipation Single Operation
T = 25°C (Note 1a)
A
1.4
D
W
Power Dissipation Single Operation
A
0.6
T = 25°C (Note 1b)
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
stg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
April, 2023 − Rev 2
FDME1024NZT/D
FDME1024NZT
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
90
Unit
°C/W
°C/W
R
R
Thermal Resistance for, Junction to Ambient (Single Operation) (Note 1a)
Thermal Resistance for, Junction to Ambient (Single Operation) (Note 1b)
θ
θ
JA
JA
195
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
I
I
= 250 ꢁ A, V = 0 V
20
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 ꢁ A, Referenced to 25°C
−
16
mV/°C
ꢂ BVDSS
ꢂ TJ
D
−
−
−
−
ꢁ A
ꢁ A
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 16 V, V = 0 V
1
DSS
GSS
DS
GS
I
=
8 V, V = 0 V
10
GS
DS
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V , I = 250 ꢁ A
0.4
0.7
1.0
V
DS D
Gate to Source Threshold Voltage
Temperature Coefficient
I = 250 ꢁA, Referenced to 25°C
D
−
−3
−
mV/°C
ꢂ VGS(th)
ꢂ TJ
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
V
GS
V
GS
= 4.5 V, I = 3.4 A
−
−
−
−
−
55
68
66
86
113
160
112
mꢀ
DS(on)
D
= 2.5 V, I = 2.9 A,
D
= 1.8 V, I = 2.5 A,
85
D
= 1.5 V, I = 2.1 A,
106
76
D
= 4.5 V, I = 3.4 A, T = 125°C
D
J
g
FS
Forward Transconductance
V
DS
= 4.5 V, I = 3.4 A
−
9
−
S
D
Dynamic Characteristics
C
Input Capacitance
V
DS
= 10 V, V = 0 V, f = 1 MHz
−
−
−
225
40
300
55
pF
pF
pF
iss
GS
C
Output Capacitance
oss
C
Reverse Transfer Capacitance
25
40
rss
Switching Characteristics
t
Turn−On Delay Time
Rise Time
V
V
= 10 V, I = 1 A,
−
−
−
−
−
−
−
4.5
2
10
10
27
10
4.2
−
ns
ns
d(on)
DD
GS
D
= 4.5 V, R
= 6 Ω
GEN
t
r
t
Turn−Off Delay Time
Fall Time
15
1.7
3
ns
d(off)
t
f
ns
Q
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DD
V
GS
= 10 V, I = 3.4 A,
nC
nC
nC
g
D
= 4.5 V
Q
0.4
0.6
gs
gd
Q
−
Drain−Source Diode Characteristics and Maximum Ratings
V
Source to Drain Diode Forward Voltage
Reverse Recovery Time
V
= 0 V, I = 0.9 A (Note 2)
−
−
−
0.7
8.5
1.4
1.2
17
10
V
SD
GS
S
t
I = 3.4 A, di/dt = 100 A/ꢁ s
F
ns
nC
rr
Q
Reverse Recovery Charge
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
FDME1024NZT
NOTES:
1. R
2
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by design
ꢃ
ꢃ
JC
JA
while R
is determined by the user’s board design.
ꢃ
CA
a).90 °C/W when mounted on
b).195 °C/W when mounted on a
minimum pad of 2 oz copper.
2
a 1 in pad of 2 oz copper.
2. Pulse Test: Pulse Width ≤ 300 ꢁ s, Duty Cycle ≤ 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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3
FDME1024NZT
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted
C
3.0
6
4
2
V
V
V
= 4.5 V
= 3 V
= 2.5 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
GS
GS
GS
2.5
V
GS
= 1.8 V
V
GS
= 1.5 V
2.0
1.5
1.0
0.5
V
GS
= 1.5 V
V
GS
= 1.8 V
V
GS
= 3 V
V
GS
= 2.5 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
V
GS
= 4.5 V
0
0.0
0.5
1.0
1.5
0
2
4
6
I , DRAIN CURRENT (A)
D
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Normalized On−Resistance vs.
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
400
1.6
I
= 3.4 A
GS
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
D
V
= 4.5 V
250
200
150
100
50
1.4
1.2
1.0
I
= 3.4 A
D
T = 125°C
J
0.8
0.6
T = 25°C
J
0
1.0
−75 −50 −25
0
25
50
75 100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (5C)
J
Figure 3. Normalized On−Resistance vs
Figure 4. On−Resistance vs Gate to
Junction Temperature
Source Voltage
10
6
4
2
V
GS
= 0 V
PULSE DURATION = 80 ꢁ s
DUTY CYCLE = 0.5% MAX
V
DS
= 5 V
1
0.1
T = 150°C
J
T = 25°C
J
T = 150°C
J
T = 25°C
J
0.01
T = −55°C
J
T = −55°C
J
0
0.0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
1.5
2.0
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage vs
Source Current
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4
FDME1024NZT
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted (CONTINUED)
C
4.5
500
I
D
= 3.4 A
C
ISS
V
DD
= 8 V
3.0
1.5
0.0
V
= 10 V
DD
100
V
DD
= 12 V
C
OSS
C
RSS
f = 1 MHz
V
GS
= 0 V
10
0.1
0
1
2
3
1
10
20
Q , GATE CHARGE (nC)
g
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
Figure 7. Gate Charge Characteristics
−1
10
10
1
−2
10
V
GS
= 0 V
100 ꢁ s
−3
−4
−5
−6
10
10
10
10
1 ms
10 ms
T = 125°C
J
THIS AREA IS
LIMITED BY
100 ms
R
DS(on)
0.1
1 s
−7
SINGLE PULSE
10
10
10 s
DC
T
J = MAX RATED
−8
R
= 195°C/W
ꢃ
JA
T = 25°C
T = 25°C
J
A
−9
0.01
10
0
3
6
9
12
15
0.1
1
10
50
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 10. Gate Leakage Current vs Gate to Source
Voltage
Figure 9. Forward Bias Safe Operating Area
100
SINGLE PULSE
R
= 195°C/W
ꢃ
JA
T = 25°C
A
10
1
0.5
10
−4
−3
−2
−1
10
10
10
t, PULSE WIDTH (s)
1
10
100
1000
Figure 11. Single Pulse Maximum Power Dissipation
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5
FDME1024NZT
TYPICAL CHARACTERISTICS T = 25°C unless otherwise noted (CONTINUED)
C
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
SINGLE PULSE
DUTY FACTOR: D = t /t
1
2
x R
0.01
R
= 195 °C/W
ꢃ
JA
PEAK T = P
x Z
+ T
ꢃ
ꢃ
JA
J
DM
JA
A
0.005
−4
−3
−2
−1
10
10
10
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark and MicroFET is a trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517DW
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13701G
UDFN6 1.6x1.6, 0.5P
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2019
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