FDME820NZT [ONSEMI]
N 沟道,PowerTrench® MOSFET,20V,9A,18mΩ;型号: | FDME820NZT |
厂家: | ONSEMI |
描述: | N 沟道,PowerTrench® MOSFET,20V,9A,18mΩ |
文件: | 总7页 (文件大小:298K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
MOSFET – N-Channel,
POWERTRENCH)
G
D
S
D
Pin 1
20 V, 9 A, 18 mohm
S
D
D
Top View
Bottom View
FDME820NZT
MicroFET
(UDFN6)
CASE 517DV
General Description
This Single N−Channel MOSFET has been designed using
onsemi’s advanced Power Trench process to optimize the R
@
DS(ON)
V
GS
= 1.8 V on special MicroFETt leadframe.
Features
• Max R
• Max R
• Max R
= 18 mW at V = 4.5 V, I = 9 A
DS(ON)
DS(ON)
DS(ON)
GS
D
D
D
D
S
= 24 mW at V = 2.5 V, I = 7.5 A
GS
D
= 32 mW at V = 1.8 V, I = 7 A
GS
D
D
G
• Low Profile – 0.55 mm maximum – in the New Package MicroFET
1.6x1.6 Thin
• HBM ESD Protection Level > 2.5 kV (Note 3)
• Free from Halogenated Compounds and Antimony Oxides
• RoHS Compliant
Applications
• Li−lon Battery Pack
• Baseband Switch
• Load Switch
MARKING DIAGRAM
• DC−DC Conversion
&Z&2&K
8T
MOSFET MAXIMUM RATINGS (T = 25°C, unless otherwise noted)
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Ratings
20
Unit
V
V
DS
GS
&Z = Assembly Plant Code
&2 = 2−Digit Date Code
&K = 2−Digits Lot Run Traceability Code
8T = Specific Device Code
V
12
V
I
D
A
− Continuous
− Pulsed
T = 25°C (Note 1a)
9
40
A
P
D
Power Dissipation for Single Operation
W
T = 25°C (Note 1a)
2.1
0.7
A
T = 25°C (Note 1b)
ORDERING INFORMATION
A
T , T
Operating and Storage Junction
Temperature Range
−55 to +150
°C
J
STG
†
Device
Package
Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
FDME820NZT
UDFN6
(Pb−Free)
5000 /
Tape & Reel
THERMAL CHARACTERISTICS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction to Ambient
(Note 1a)
70
°C/W
q
JA
R
Thermal Resistance, Junction to Ambient
(Note 1b)
190
q
JA
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2023 − Rev. 5
FDME820NZT/D
FDME820NZT
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
I
I
= 250 mA, V = 0 V
20
−
−
−
V
DSS
D
GS
Breakdown Voltage Temperature
Coefficient
= 250 mA, Referenced to 25°C
−
20
mV/°C
DBVDSS
DTJ
D
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
V
V
= 16 V, V = 0 V
−
−
−
−
1
mA
mA
DSS
GSS
DS
GS
I
=
12 V, V = 0 V
10
GS
DS
ON CHARACTERISTICS
V
Gate to Source Threshold Voltage
V
I
= V I = 250 mA
DS , D
0.5
0.8
1.0
V
GS(th)
GS
Gate to Source Threshold Voltage
Temperature Coefficient
= 250 mA, Referenced to 25°C
−
−3
−
mV/°C
DVGS(th)
DTJ
D
R
DS(on)
Drain to Source On–Resistance
V
GS
V
GS
V
GS
V
GS
= 4.5 V, I = 9 A
−
−
−
14
17
26
19
18
24
32
24
mW
D
= 2.5 V, I = 7.5 A
D
= 1.8 V, I = 7 A,
D
= 4.5 V, I = 9 A, T = 125°C
D
J
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 10 V, V = 0 V, f = 1 MHz
−
−
−
−
865
203
190
1.0
−
−
−
−
pF
pF
pF
W
iss
DS
GS
C
oss
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C
rss
R
f = 1 MHz
g
SWITCHING CHARACTERISTICS
t
Turn–On Delay Time
Turn–On Rise Time
V
= 10 V, I = 4 A, V = 4.5 V,
GEN
−
−
−
−
−
−
−
−
9
−
−
−
−
−
−
−
−
ns
ns
d(on)
DD
D
GS
R
= 2 W
t
r
5
t
Turn–Off Delay Time
Turn–Off Fall Time
19
5
ns
d(off)
t
f
ns
Q
Q
Total Gate Charge
V
DD
V
DD
V
DD
= 4.2 V, I = 3 A, V = 4.3 V
8.0
8.5
1.4
3.2
nC
nC
nC
nC
g
D
GS
Total Gate Charge
= 4.2 V, I = 3 A, V = 4.5 V
D GS
g
Q
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
= 10 V, I = 9 A
D
gs
gd
Q
DRAIN−SOURCE CHARACTERISTICS
V
SD
Source to Drain Diode Forward Voltage
V
GS
V
GS
= 0 V, I = 1.6 A (Note 2)
−
0.7
0.8
1.2
1.2
V
S
= 0 V, I = 9 A (Note 2)
S
t
Reverse Recovery Time
I = 9 A, di/dt = 100 A/ms
F
−
−
18
4
−
−
ns
rr
Q
Reverse Recovery Charge
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2
1. R
is determined with the device mounted on a 1 in oz. copper pad on a 1.5 x 1.5 in. board of FR−4 material. R
is guaranteed by design
JC
q
q
JA
while R
is determined by the user’s board design.
q
JA
a. 70°C/W when mounted
b. 190°C/W when mounted
on a minimum pad of 2 oz
copper.
2
on a 1 in pad of 2 oz cop-
per.
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
www.onsemi.com
2
FDME820NZT
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted)
J
5
40
V
V
V
= 4.5 V
= 3 V
= 2.5 V
GS
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
V
GS
= 1.5 V
GS
GS
4
3
30
20
V
GS
= 1.8 V
V
GS
= 2 V
V
= 2 V
GS
V
GS
= 2.5 V
V
GS
= 1.8 V
2
1
0
V
GS
= 3 V
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
10
0
V
GS
= 4.5 V
V
= 1.5 V
GS
2.5
0
10
20
I , Drain Current (A)
30
40
4.5
1.2
0
0.5
1.0
1.5
2.0
V
DS
, Drain−Source Voltage (V)
D
Figure 2. Normalized On−Resistance vs.
Figure 1. On−Region Characteristics
Drain Current and Gate Voltage
80
60
40
20
0
1.6
1.4
1.2
1.0
0.8
0.6
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
I
V
= 9 A
D
= 4.5 V
GS
I
D
= 9 A
T = 125°C
A
T = 25°C
A
−75 −50 −25
0
25 50 75 100 125 150
0.9
1.8
2.7
3.6
T , Junction Temperature (5C)
J
V
GS
, Gate to Source Voltage (V)
Figure 3. Normalized On−Resistance vs.
Figure 4. On−Resistance vs Gate−to−Source
Junction Temperature
Voltage
40
30
1000
100
10
Pulse Duration = 80 ms
Duty Cycle = 0.5 % Max
V
GS
= 0 V
V
= 5 V
DS
T = 150°C
J
T = 25°C
J
20
1
T = 150°C
J
T = 25°C
J
0.1
T = −55°C
J
10
0
0.01
0.001
T = −55°C
J
3.0
0.5
1.0
1.5
2.0
2.5
0.0
0
1.0
0.2
0.4
0.6
0.8
V
GS
, Gate to Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
www.onsemi.com
3
FDME820NZT
TYPICAL CHARACTERISTICS (T = 25°C, UNLESS OTHERWISE NOTED) (CONTINUED)
J
4.5
3.6
2.7
1.8
0.9
0.0
2000
I
D
= 9 A
1000
V
DD
= 8 V
C
iss
V
= 10 V
DD
V
= 12 V
DD
C
C
oss
f = 1 MHz
= 0 V
rss
V
GS
100
6
0
3
9
12
0.1
1
10
20
Q , Gate Charge (nC)
g
V
DS
, Drain to Source Voltage (V)
Figure 8. Capacitance vs Drain to Source
Voltage
Figure 7. Gate Charge Characteristics
−1
20
10
10
V
GS
= 0 V
−2
10
10
−3
T = 25°C
J
−4
10
T = 125°C
J
−5
10
T = 100°C
J
−6
10
10
−7
T = 25°C
J
−8
−9
10
T = 125°C
J
10
−10
1
10
0
3
6
9
12
15
18
0.001
0.01
0.1
1
10
100
t
, Time in Avalanche (ms)
AV
V
GS
, Gate to Source Voltage (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
1000
100
100
10
1
Single Pulse
= 190°C/W
T = 25°C
A
R
θ
JA
100 us
1 ms
10
1
This Area is
10 ms
Limited by R
DS(ON)
100 ms
Single Pulse
T = Max Rated
0.1
1 s
10 s
DC
J
R
= 190°C/W
θ
JA
T = 25°C
A
0.01
0.1
−4
−3
−2
−1
0.01
0.1
10
100
1
10
10
10
10
1
10
100 1000
V
DS
, Drain to Source Voltage (V)
t, Pulse Width (s)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
www.onsemi.com
4
FDME820NZT
2
1
Duty Cycle−Descending Order
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
t
1
t
2
0.01
Single Pulse
Notes:
Duty Factor: D = t /t
R
= 190°C/W
θ
JA
1
2
Peak T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.001
10
−1
−3
−4
−2
10
1
10
100
1000
10
10
t, Rectangular Pulse Duration (s)
Figure 13. Junction−to−Ambient Transient Thermal Response Curve
POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States
and/or other countries.
MicroFET is trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other
countries.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517DV
ISSUE O
DATE 31 OCT 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13700G
UDFN6 1.6x1.6, 0.5P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号:
©2020 ICPDF网 联系我们和版权申明